Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3
Search results for: B. Djellouli
3 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors
Authors: A. Douara, N. Kermas, B. Djellouli
Abstract:
In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.Keywords: gate capacitance, AlGaN/GaN, HEMTs, quantum capacitance, centroid capacitance
Procedia PDF Downloads 3942 GE as a Channel Material in P-Type MOSFETs
Authors: S. Slimani, B. Djellouli
Abstract:
Novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials like Ge is a very promising material due to its high mobility and is being considered to replace Si in the channel to achieve higher drive currents and switching speeds .Various approaches to circumvent the scaling limits to benchmark the performance of nanoscale MOSFETS with different channel materials, the optimized structure is simulated within nextnano in order to highlight the quantum effects on DG MOSFETs when Si is replaced by Ge and SiO2 is replaced by ZrO2 and HfO2as the gate dielectric. The results have shown that Ge MOSFET have the highest mobility and high permittivity oxides serve to maintain high drive current. The simulations show significant improvements compared with DGMOSFET using SiO2 gate dielectric and Si channel.Keywords: high mobility, high-k, quantum effects, SOI-DGMOSFET
Procedia PDF Downloads 3661 The Use of Remote Sensing in the Study of Vegetation Jebel Boutaleb, Setif, Algeria
Authors: Khaled Missaoui, Amina Beldjazia, Rachid Gharzouli, Yamna Djellouli
Abstract:
Optical remote sensing makes use of visible, near infrared and short-wave infrared sensors to form images of the earth's surface by detecting the solar radiation reflected from targets on the ground. Different materials reflect and absorb differently at different wavelengths. Thus, the targets can be differentiated by their spectral reflectance signatures in the remotely sensed images. In this work, we are interested to study the distribution of vegetation in the massif forest of Boutaleb (North East of Algeria) which suffered between 1998 and 1999 very large fires. In this case, we use remote sensing with Landsat images from two dates (1984 and 2000) to see the results of these fires. Vegetation has a unique spectral signature which enables it to be distinguished readily from other types of land cover in an optical/near-infrared image. Normalized Difference Vegetation Index (NDVI) is calculated with ENVI 4.7 from Band 3 and 4. The results showed a very important floristic diversity in this forest. The comparison of NDVI from the two dates confirms that there is a decrease of the density of vegetation in this area due to repeated fires.Keywords: remote sensing, boutaleb, diversity, forest
Procedia PDF Downloads 558