Search results for: EC (Electrical Conductivity)

Authors: Irmak Karaduman, Tugba Corlu, Sezin Galioglu, Burcu Akata, M. Ali Yildirim, Aytunç Ateş, Selim Acar

Abstract:

Breath analysis represents a promising non-invasive, fast and cost-effective alternative to well-established diagnostic and monitoring techniques such as blood analysis, endoscopy, ultrasonic and tomographic monitoring. Portable, non-invasive, and low-cost breath analysis devices are becoming increasingly desirable for monitoring different diseases, especially asthma. Beacuse of this, NO gas sensing at low concentrations has attracted progressive attention for clinical analysis in asthma. Recently, nanomaterials based sensors are considered to be a promising clinical and laboratory diagnostic tool, because its large surface–to–volume ratio, controllable structure, easily tailored chemical and physical properties, which bring high sensitivity, fast dynamic processand even the increasing specificity. Among various nanomaterials, semiconducting metal oxides are extensively studied gas-sensing materials and are potential sensing elements for breathanalyzer due to their high sensitivity, simple design, low cost and good stability.The sensitivities of metal oxide semiconductor gas sensors can be enhanced by adding noble metals. Doping contents, distribution, and size of metallic or metal oxide catalysts are key parameters for enhancing gas selectivity as well as sensitivity. By manufacturing doping MOS structures, it is possible to develop more efficient sensor sensing layers. Zeolites are perhaps the most widely employed group of silicon-based nanoporous solids. Their well-defined pores of sub nanometric size have earned them the name of molecular sieves, meaning that operation in the size exclusion regime is possible by selecting, among over 170 structures available, the zeolite whose pores allow the pass of the desired molecule, while keeping larger molecules outside.In fact it is selective adsorption, rather than molecular sieving, the mechanism that explains most of the successful gas separations achieved with zeolite membranes. In view of their molecular sieving and selective adsorption properties, it is not surprising that zeolites have found use in a number of works dealing with gas sensing devices. In this study, the Cu doped ZnO nanostructure film was produced by SILAR method and investigated the NO gas sensing properties. To obtain the selectivity of the sample, the gases including CO,NH3,H2 and CH4 were detected to compare with NO. The maximum response is obtained at 85 C for 20 ppb NO gas. The sensor shows high response to NO gas. However, acceptable responses are calculated for CO and NH3 gases. Therefore, there are no responses obtain for H2 and CH4 gases. Enhanced to selectivity, Cu doped ZnO nanostructure film was coated with zeolite A thin film. It is found that the sample possess an acceptable response towards NO hardly respond to CO, NH3, H2 and CH4 at room temperature. This difference in the response can be expressed in terms of differences in the molecular structure, the dipole moment, strength of the electrostatic interaction and the dielectric constant. The as-synthesized thin film is considered to be one of the extremely promising candidate materials in electronic nose applications. This work is supported by The Scientific and Technological Research Council of Turkey (TUBİTAK) under Project No, 115M658 and Gazi University Scientific Research Fund under project no 05/2016-21.

Keywords: Cu doped ZnO, electrical characterization, gas sensing, zeolite

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Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Hung-Hsi Huang, Si-Fu Chen, Yun-Jung Yang, Bo-Chun Chiang, Yu-Chuang Chen, Shen-Tin Yang

Abstract:

AlGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied due to their intrinsic advantages of high breakdown electric field, high electron saturation velocity, and excellent chemical stability. They are also suitable for ultra-violet (UV) photodetection due to the corresponding wavelengths of GaN bandgap. To improve the optical responsivity by decreasing the dark current due to gate leakage problems and limited Schottky barrier heights in GaN-based HEMT devices, various metal-oxide-semiconductor HEMTs (MOS-HEMTs) have been devised by using atomic layer deposition (ALD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), liquid phase deposition (LPD), and RF sputtering. The gate dielectrics include MgO, HfO2, Al2O3, La2O3, and TiO2. In order to provide complementary circuit operation, enhancement-mode (E-mode) devices have been lately studied using techniques of fluorine treatment, p-type capper, piezoneutralization layer, and MOS-gate structure. This work reports an Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMT design by using a cost-effective ozone water oxidization technique. The present ozone oxidization method advantages of low cost processing facility, processing simplicity, compatibility to device fabrication, and room-temperature operation under atmospheric pressure. It can further reduce the gate-to-channel distance and improve the transocnductance (gm) gain for a specific oxide thickness, since the formation of the Al2O3 will consume part of the AlGaN barrier at the same time. The epitaxial structure of the studied devices was grown by using the MOCVD technique. On a Si substrate, the layer structures include a 3.9 m C-doped GaN buffer, a 300 nm GaN channel layer, and a 5 nm Al0.25Ga0.75N barrier layer. Mesa etching was performed to provide electrical isolation by using an inductively coupled-plasma reactive ion etcher (ICP-RIE). Ti/Al/Au were thermally evaporated and annealed to form the source and drain ohmic contacts. The device was immersed into the H2O2 solution pumped with ozone gas generated by using an OW-K2 ozone generator. Ni/Au were deposited as the gate electrode to complete device fabrication of MOS-HEMT. The formed Al2O3 oxide thickness 7 nm and the remained AlGaN barrier thickness is 2 nm. A reference HEMT device has also been fabricated in comparison on the same epitaxial structure. The gate dimensions are 1.2 × 100 µm 2 with a source-to-drain spacing of 5 μm for both devices. The dielectric constant (k) of Al2O3 was characterized to be 9.2 by using C-V measurement. Reduced interface state density after oxidization has been verified by the low-frequency noise spectra, Hooge coefficients, and pulse I-V measurement. Improved device characteristics at temperatures of 300 K-450 K have been achieved for the present MOS-HEMT design. Consequently, Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMTs by using the ozone water oxidization method are reported. In comparison with a conventional Schottky-gate HEMT, the MOS-HEMT design has demonstrated excellent enhancements of 138% (176%) in gm, max, 118% (139%) in IDS, max, 53% (62%) in BVGD, 3 (2)-order reduction in IG leakage at VGD = -60 V at 300 (450) K. This work is promising for millimeter-wave integrated circuit (MMIC) and three-terminal active UV photodetector applications.

Keywords: MOS-HEMT, enhancement mode, AlGaN/GaN, passivation, ozone water oxidation, gate leakage

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Authors: Shyam Sunder Gupta

Abstract:

For creation of Universe, theory of Big Bang , from Singularity is most acceptable theory, but has limitations as it does not answer ; how Singularity gets created and what causes Big Bang ?Further , Universe is composed of 95% Dark Energy and Dark Matter and balance 5% is visible part of Universe , but no explanation . Recently, it has been reported that there could be very large number of Universes, but only , a stipulation. This research which is based on Bhagvat Puran, a Vedic Scripture answers all questions. There is a Unique Energy Field which is eternal and infinite. The carrier Particles of Unique Energy are Paramanus; God Particles. Paramanus are Fundamental Particles and combination of these particles create bigger particles from which Universe gets created. For creation to initiate, Unique Energy gets represented in three phases; Positive Male Energy, Neutral Energy(creates Eternal Time)and Negative Female Energy. Positive Male Energy further expands in three forms of Creative Energies (CE1,CE2andCE3)and 16 principles get created, namely, Energy of Activation , Energy of Action, Energy of Darkness, Pradhan ( Equilibrium state of three energies ) , Prakriti(Non-equilibrium state of three energies, creating modes of Activation, Action and Darkness),Mahat-tattva ( consists of three modes , dominant in Mode of Darkness), Time, Energy of Consciousness, Ego Energy(consists of three modes , very strongly dominated by Mode of Darkness),Energy of Intellect, Mind Energy , Sky( creates Space and Sound Energy),Air(creates gaseous substances), Fire( creates different forms of energies like thermal, light, electrical etc.), Water( creates liquid substances)and Earth(creates solid substances). CE1 Energy creates Infinite number of Singularities from seven principles, Pradhan , Mahat-tattva, Sky , Air, Fire, Water and Earth . CE1 Energy gets divided as CE2 and enters along with other 9 principles , in each of Singularity and Primary Big Bang takes and infinite number of Universes get created. Each Universe has seven coverings of 7 principles and each layer is 10 times thicker than previous layer. By Energy CE2 , space in Universe under the coverings is divided in two parts , upper part and lower part. Upper part is occupied by Dark Energy which is created from Mode of Darkness in Ego Energy which keeps getting converted in Dark Matter and forms Invisible part of Universe. In the lower part , process of evolution gets initiated and seeds of 24 elements , Consciousness , Ego, Intellect, Mind, 5 Fundamental Elements( space, Air, Fire, Water Earth, which create non-living matter ),5 senses which receive inputs( eyes, nose, ears, tongue , skin), 5 Working Senses (Smell, Taste, Sight, Touch and Hearing);5 elements of Action( Organs of procreation , excretion, locomotion , speech and acquisition ), get created . In EC2 Energy, Singularity gets created which gets exploded by force of Energy of Action ,and Secondary Big Bang takes place and Visible Universe gets created in the shape of Bud of Flower Lotus . Within the Visible part of Universe, a small part gets created , Phenomenal Universe. Diameter of Sun and planetary system ,at the time of formation ,is 6.4 billion km, which is close to reported value . There are 5 different orbits , with reference to our Solar System. Moon around earth takes one month,, earth around sun one year, sun around Milk way one cosmic year(322.58 million years), Milky way around Universe 4.32 billion years and universe around center of universe 311.04 trillion years. Universe creation is a cyclic process with cycle time of 622.08 trillion years.In summary, Universe consists of 4 parts; covering of 7 layers, Dark Energy and Dark Matter, Visible and Phenomenal universe.

Keywords: big bang, creation, dark energy, dark matter, singularity, universe

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