Fabrication of InGaAs P-I-N Micro-Photodiode Sensor Array

Authors: Jyun-Hao Liao, Chien-Ju Chen, Chia-Jui Yu, Meng Chyi Wu, Chia-Ching Wu

Abstract:

In this letter, we reported the fabrication of InGaAs micro-photodiode sensor array with the rapid thermal diffusion (RTD) technique. The spin-on dopant source Zn was used to form the p-type region in InP layer. Through the RTD technique, the InP/InGaAs heterostructure was formed. We improved our fabrication on the p-i-n photodiode to micro size which pixel is 7.8um, and the pitch is 12.8um. The proper SiNx was deposited to form the passivation layer. The leakage current of single pixel decrease to 3.3pA at -5V, and 35fA at -10mV. The leakage current densities of each voltage are 21uA/cm² at -5V and 0.223uA/cm² at -10mV. As we focus on the wavelength from 0.9um to 1.7um, the optimized Si/Al₂O₃ bilayers are deposited to form the AR-coating.

Keywords: InGaAs, micro sensor array, p-i-n photodiode, rapid thermal diffusion, Zn diffusion