Post Growth Annealing Effect on Deep Level Emission and Raman Spectra of Hydrothermally Grown ZnO Nanorods Assisted by KMnO4
Commenced in January 2007
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Post Growth Annealing Effect on Deep Level Emission and Raman Spectra of Hydrothermally Grown ZnO Nanorods Assisted by KMnO4

Authors: Ashish Kumar, Tejendra Dixit, I. A. Palani, Vipul Singh

Abstract:

Zinc oxide, with its interesting properties such as large band gap (3.37eV), high exciton binding energy (60 meV) and intense UV absorption has been studied in literature for various applications viz. optoelectronics, biosensors, UV-photodetectors etc. The performance of ZnO devices is highly influenced by morphologies, size, crystallinity of the ZnO active layer and processing conditions. Recently, our group has shown the influence of the in situ addition of KMnO4 in the precursor solution during the hydrothermal growth of ZnO nanorods (NRs) on their near band edge (NBE) emission. In this paper, we have investigated the effect of post-growth annealing on the variations in NBE and deep level (DL) emissions of as grown ZnO nanorods. These observed results have been explained on the basis of X-ray Diffraction (XRD) and Raman spectroscopic analysis, which clearly show that improved crystalinity and quantum confinement in ZnO nanorods.

Keywords: ZnO, nanorods, hydrothermal, KMnO4

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