Studies on H2S Gas Sensing Performance of Al2O3-Doped ZnO Thick Films at Ppb Level

Authors: M. K. Deore

Abstract:

The thick films of undoped and Al2O3 doped- ZnO were prepared by screen printing technique. AR grade (99.9 % pure) Zinc Oxide powder were mixed mechanochemically in acetone medium with Aluminium Chloride (AlCl2) material in various weight percentages such as 0.5, 1, 3 and 5 wt % to obtain Al2O3 - ZnO composite. The prepared materials were sintered at 1000oC for 12h in air ambience and ball milled to ensure sufficiently fine particle size. The electrical, structural and morphological properties of the films were investigated. The X-ray diffraction analysis of pure and doped ZnO shows the polycrystalline nature. The surface morphology of the films was studied by SEM. The final composition of each film was determined by EDAX analysis. The gas response of undoped and Al2O3- doped ZnO films were studied for different gases such as CO, H2, NH3, and H2S at operating temperature ranging from 50 oC to 450 o C. The pure film shows the response to H2S gas (500ppm) at 300oC while the film doped with 3 wt.% Al2O3 gives the good response to H2S gas(ppb) at 350oC. The selectivity, response and recovery time of the sensor were measured and presented.

Keywords: thick films, ZnO-Al2O3, H2S gas, sensitivity, selectivity, response and recovery time