Two-Dimensional Van-Der Waals Heterostructure for Highly Energy-Efficient Field-Free Deterministic Spin-Orbit Torque Switching at Room Temperature

Authors: Pradeep Raj Sharma, Bogeun Jang, Jongill Hong

Abstract:

Spin-orbit torque (SOT) is an efficient approach for manipulating the magnetization of ferromagnetic materials (FMs), providing improved device performance, better compatibility, and ultra-fast switching with lower power consumption compared to spin-transfer torque (STT). Among the various materials and structural designs, two-dimensional (2D) van-der Waals (vdW) layered materials and their heterostructures have been demonstrated as highly scalable and promising device architecture for SOT. In particular, a bilayer heterostructure consisting of fully 2D-vdW-FM, non-magnetic material (NM) offers a potential platform for controlling the magnetization using SOT because of the advantages of being easy to scale and less energy to switch. Here, we report filed-free deterministic switching driven by SOT at room temperature, integrating perpendicularly magnetized 2D-vdW material Fe₃GaTe₂ (FGaT) and NM WTe₂. Pulse current-induced magnetization switching with an ultra-low current density of about 6.5×10⁵ A/cm², yielding a SOT efficiency close to double-digits at 300 K, is reported. These values are two orders of magnitude higher than those observed in conventional heavy metal (HM) based SOT and exceed those reported with 2D-vdW layered materials. WTe₂, a topological semimetal possessing strong SOC and high spin Hall angle, can induce significant spin accumulation with negligible spin loss across the transparent 2D bilayer heterointerface. This promising device architecture enables highly compatible, energy-efficient, non-volatile memory and lays the foundation for designing efficient, flexible, and miniaturized spintronic devices.

Keywords: spintronics, spin-orbit torque, spin Hall effect, spin Hall angle, topological semimetal, perpendicular magnetic anisotropy