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The Impact of Process Parameters on the Output Characteristics of an LDMOS Device
Abstract:In this paper, we have examined the effect of process parameter variation on the electrical characteristics of an LDMOS device. The rate of change in the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters is investigated
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1330713Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1561
 G. Doudorov, "Evaluation of Si-LDMOS transistor for RF power amplifier in 2-6 GHz frequency range," M.S. Thesis, Linköping University, Sweden, 2003.
 F.M. Rotella at al., "Modeling, Analysis and design of RF LDMOS Devices Using Harmonic-Balance Device Simulation," IEEE Transactions on microwave theory and techniques, Vol.48, No.6, June 2000.
 J.Olsson et al., "1W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor", IEEE Electron Device Lett, vol. 23,pp.206-8, April 2002.
 L. Vestling, J. Ankarcrona and J. Olsson, "Analysis and Design of a Low - Voltage High -Frequency LDMOS Transistor," IEEE Transaction on Electron Devices, vol. 49, no. 6, pp.976-980 ,June 2002.