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Radiation Effects and Defects in InAs, InP Compounds and Their Solid Solutions InPxAs1-x

Authors: N. Kekelidze, B. Kvirkvelia, E. Khutsishvili, T. Qamushadze, D. Kekelidze, R. Kobaidze, Z. Chubinishvili, N. Qobulashvili, G. Kekelidze

Abstract:

On the basis of InAs, InP and their InPxAs1-x solid solutions, the technologies were developed and materials were created where the electron concentration and optical and thermoelectric properties do not change under the irradiation with Ф = 2∙1018 n/cm2 fluences of fast neutrons high-energy electrons (50 MeV, Ф = 6·1017 e/cm2) and 3 MeV electrons with fluence Ф = 3∙1018 e/cm2. The problem of obtaining such material has been solved, in which under hard irradiation the mobility of the electrons does not decrease, but increases. This material is characterized by high thermal stability up to T = 700 °C. The complex process of defects formation has been analyzed and shown that, despite of hard irradiation, the essential properties of investigated materials are mainly determined by point type defects.

Keywords: InAs, InP, solid solutions, irradiation.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.3461910

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