The Effect of Aging of ZnO, AZO, and GZO Films on the Microstructure and Photoelectric Property
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 33122
The Effect of Aging of ZnO, AZO, and GZO Films on the Microstructure and Photoelectric Property

Authors: Zue Chin Chang

Abstract:

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films. The AZO film had the best electrical properties; it had the lowest resistivity of 6.6 × 10-4 cm, the best sheet resistance of 2.2 × 10-1 Ω/square, and the highest carrier concentration of 4.3 × 1020 cm-3, as compared to the ZnO and GZO films.

Keywords: Aging, films, Microstructure, Photoelectric Property.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1107882

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2018

References:


[1] H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, D. B. Chrisey, Electrical, Optical, and Structural Properties of Indium–Tin–Oxide Thin Films for Organic Light-Emitting Devices. J. Appl. Phys. 86 (1999) 6451-6461.
[2] Y. C. Lin, J. Y. Li, W. T. Yen, Applied Surface Science 254 (2008) 3262.
[3] H. M. Ali, M. M. Adb El-Raheem, N. M. Megahed, H. A. Mohamed, Journal of Physics and Chemistry of Solids 67 (2006) 1823.
[4] T. Minami, T. Miyata, Thin Solid Films, 517 (2008) 1474.
[5] H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao, D. C. Look, Appl. Phys. Lett. 77 (2000) 3761.
[6] V. Assunção, E. Fortunato, A. Marques, H. Águas, I. Ferreira, M.E.V. Costa, R. Martins, Thin Solid Films, 427 (2003) 401.
[7] J. Ye, S. Gu, S. Zhu, T. Chen, L. Hu, F. Qin, R. Zhang, Y. Shi, Y. Zheng, Journal of Crystal Growth 243 (2002) 151.
[8] J. Zhao, L. Hu, W. Wang, W. Liu, A. Gong, Vacuum, 826 (2008) 664.
[9] S. H. Bae, S. Y. Lee, H. Y. Kim, S. Im, Opt. Mater., 17 (2001) 327.
[10] K. Sakurai, M. Kanehiro, K. Nakahara, T. Tanabe, S. Fujita, S. Fujita, Journal of Crystal Growth, 209(2000) 522.
[11] D. G. Baik, and S. M. Cho, Thin Solid Films, 354 (1999) 227.
[12] X. Yu, J. Ma, F. Ji, Y. Wang, X. Zhang, C. Cheng, H. Ma, Applied Surface Science, 239 (2005) 222.
[13] G. Gonçalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato, Thin Solid Films, 515 (2007) 8562.
[14] T. Yamada, A. Miyake, H. Makino, N. Yamamoto, T. Yamamoto, Thin Solid Films, 517 (2009) 3134.
[15] W.T. Yen, Y.C. Lin, P.C. Yao, J.H. Ke, Y.L. Chen, Thin Solid Films, 518 (2010) 3882.
[16] F. Wu, L. Fang, Y.J. Pan, K. Zhou, H.B. Ruan, G.B. Liu, C.Y. Kong, Thin Solid Films, 520 (2011) 703.
[17] A. Sarkar, S. Ghosh, S. Chaudhury, A.K. Pal, Thin Solid Films 204 (1991) 255.
[18] P .Gao, L.J. Meng, M.P. dos Santos, V. Teixeira, M. Andritschky, Vacuum 56 (2000) 143.
[19] T. L. Tansley, D. F. Neely, Thin Solid Films, 121 (1984) 95.