Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1339444Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 877
 R.R. Schaller, “Moore's Law: Past, Present, and Future,” Spectrum, IEEE, vol. 34, pp. 52 - 59, August 2002.
 Douglas A. Pucknell and Kamran Eshraghian, Basic VLSI Design, 3rd ed., Prentice-Hall, 1995, pp.6-10.
 Linda E. M. Brackenbury, Design of VLSI Systems: A Practical Introduction, Macmillan, 1987, pp.13-18.
 K. K. Likharev, “Single-Electron Devices and Their Applications,” Proceedings of the IEEE, vol. 87, pp. 606 - 632, August 2002.
 A. Scholze “Imulation of Single-Electron Devices,” Ph.D. dissertation, Swiss Federal Institute of Technology, Zurich, Switzerland, 2000, pp.15-17.
 G. Lientschnig “Single-Electron and Molecular Devices,” Ph.D. Thesis, Delft University of Technology, Delft, Netherlands, November 2003, pp.13-20.
 J. R. Tucker “Complementary Digital Logic Based on the Coulomb Blockade,” Journal of Applied Physics, 72, 4399, 1992.