Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 8

sputtering Related Publications

8 Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating

Authors: G. Rosaz, V. Semblanet, S. Calatroni, A. Sublet, M. Taborelli

Abstract:

We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnetic profiles. These show a good agreement between the expected and actual values. The qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016 A.cm-2 to 0.074 A.cm-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10-3 mbar and a plasma source power of 300 W.

Keywords: sputtering, niobium, Ion energy distribution, retarding field energy analyzer, SRF cavity, unbalanced magnetron

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 865
7 Influence of Argon Gas Concentration in N2-Ar Plasma for the Nitridation of Si in Abnormal Glow Discharge

Authors: R. Ahmad, K. Abbas, I. A. Khan, S. Saleem, U. Ikhlaq

Abstract:

Nitriding of p-type Si samples by pulsed DC glow discharge is carried out for different Ar concentrations (30% to 90%) in nitrogen-argon plasma whereas the other parameters like pressure (2 mbar), treatment time (4 hr) and power (175 W) are kept constant. The phase identification, crystal structure, crystallinity, chemical composition, surface morphology and topography of the nitrided layer are studied using X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), optical microscopy (OM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The XRD patterns reveal the development of different diffraction planes of Si3N4 confirming the formation of polycrystalline layer. FTIR spectrum confirms the formation of bond between Si and N. Results reveal that addition of Ar into N2 plasma plays an important role to enhance the production of active species which facilitate the nitrogen diffusion.

Keywords: Crystallinity, Nitriding, sputtering, glow discharge

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 918
6 Response Surface Methodology for Optimum Hardness of TiN on Steel Substrate

Authors: R. Joseph Raviselvan, K. Ramanathan, P. Perumal, M. R. Thansekhar

Abstract:

Hard coatings are widely used in cutting and forming tool industries. Titanium Nitride (TiN) possesses good hardness, strength, and corrosion resistance. The coating properties are influenced by many process parameters. The coatings were deposited on steel substrate by changing the process parameters such as substrate temperature, nitrogen flow rate and target power in a D.C planer magnetron sputtering. The structure of coatings were analysed using XRD. The hardness of coatings was found using Micro hardness tester. From the experimental data, a regression model was developed and the optimum response was determined using Response Surface Methodology (RSM).

Keywords: Hardness, sputtering, RSM, TiN XRD

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1231
5 Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells

Authors: Feng-Hao Hsu, Na-Fu Wang, Yu-Zen Tsai, Yu-Song Cheng, Cheng-Fu Yang, Mau-Phon Houng

Abstract:

This study fabricates p-type Ni1xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.

Keywords: Solar Cells, sputtering, heterojunction, nickel oxide

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1482
4 The Microstructure of Aging ZnO, AZO, and GZO Films

Authors: Z. C. Chang, S. C. Liang

Abstract:

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than did ZnO film, it being ion vacant and nonstoichiometric. The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films.

Keywords: ZnO, AZO, GZO, doped, sputtering

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2368
3 Composition Dependent Formation of Sputtered Co-Cu Film on Cr Under-Layer

Authors: Watcharee Rattanasakulthong, Pichai Sirisangsawang, Supree Pinitsoontorn

Abstract:

Sputtered CoxCu100-x films with the different compositions of x = 57.7, 45.8, 25.5, 13.8, 8.8, 7.5 and 1.8 were deposited on Cr under-layer by RF-sputtering. SEM result reveals that the averaged thickness of Co-Cu film and Cr under-layer are 92 nm and 22nm, respectively. All Co-Cu films are composed of Co (FCC) and Cu (FCC) phases in (111) directions on BCC-Cr (110) under-layers. Magnetic properties, surface roughness and morphology of Co-Cu films are dependent on the film composition. The maximum and minimum surface roughness of 3.24 and 1.16nm are observed on the Co7.5Cu92.5 and Co45.8Cu54.2films, respectively. It can be described that the variance of surface roughness of the film because of the difference of the agglomeration rate of Co and Cu atoms on Cr under-layer. The Co57.5Cu42.3, Co45.8Cu54.2 and Co25.5Cu74.5 films shows the ferromagnetic phase whereas the rest of the film exhibits the paramagnetic phase at room temperature. The saturation magnetization, remnant magnetization and coercive field of Co-Cu films on Cr under-layer are slightly increased with increasing the Co composition. It can be concluded that the required magnetic properties and surface roughness of the Co-Cu film can be adapted by the adjustment of the film composition.

Keywords: Magnetic Properties, sputtering, surface roughness, Atomic Force Microscopy (AFM), Co-Cu films, Under-layers

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1596
2 Energetic Considerations for Sputter Deposition Processes

Authors: Dirk Hegemann, Martin Amberg

Abstract:

Sputter deposition processes, especially for sputtering from metal targets, are well investigated. For practical reasons, i.e. for industrial processes, energetic considerations for sputter deposition are useful in order to optimize the sputtering process. In particular, for substrates at floating conditions it is required to obtain energetic conditions during film growth that enables sufficient dense metal films of good quality. The influence of ion energies, energy density and momentum transfer is thus examined both for sputtering at the target as well as during film growth. Different regimes dominated by ion energy, energy density and momentum transfer were identified by using different plasma sources and by varying power input, pressure and bias voltage.

Keywords: Energy Density, Film Growth, sputtering, momentum transfer

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2077
1 The Buffer Gas Influence Rate on Absolute Cu Atoms Density with regard to Deposition

Authors: S. Sobhanian, H. Naghshara, N. Sadeghi, S. Khorram

Abstract:

The absolute Cu atoms density in Cu(2S1/2ÔåÉ2P1/2) ground state has been measured by Resonance Optical Absorption (ROA) technique in a DC magnetron sputtering deposition with argon. We measured these densities under variety of operation conditions: pressure from 0.6 μbar to 14 μbar, input power from 10W to 200W and N2 mixture from 0% to 100%. For measuring the gas temperature, we used the simulation of N2 rotational spectra with a special computer code. The absolute number density of Cu atoms decreases with increasing the N2 percentage of buffer gas at any conditions of this work. But the deposition rate, is not decreased with the same manner. The deposition rate variation is very small and in the limit of quartz balance measuring equipment accuracy. So we conclude that decrease in the absolute number density of Cu atoms in magnetron plasma has not a big effect on deposition rate, because the diffusion of Cu atoms to the chamber volume and deviation of Cu atoms from direct path (towards the substrate) decreases with increasing of N2 percentage of buffer gas. This is because of the lower mass of N2 atoms compared to the argon ones.

Keywords: sputtering, deposition rate, Resonance Optical Absorption

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1016