Search results for: semiconductors

Authors: Hoda Aleali, Nastaran Mansour, Maryam Mirzaie

Abstract:

In this paper, we study the optical nonlinearities of Silver sulfide (Ag2S) nanostructures dispersed in the Dimethyl sulfoxide (DMSO) under exposure to 532 nm, 15 nanosecond (ns) pulsed laser irradiation. Ultraviolet–visible absorption spectrometry (UV-Vis), X-ray diffraction (XRD), and transmission electron microscopy (TEM) are used to characterize the obtained nanocrystal samples. The band gap energy of colloid is determined by analyzing the UV–Vis absorption spectra of the Ag2S NPs using the band theory of semiconductors. Z-scan technique is used to characterize the optical nonlinear properties of the Ag2S nanoparticles (NPs). Large enhancement of two photon absorption effect is observed with increase in concentration of the Ag2S nanoparticles using open Zscan measurements in the ns laser regime. The values of the nonlinear absorption coefficients are determined based on the local nonlinear responses including two photon absorption. The observed aperture dependence of the Ag2S NP limiting performance indicates that the nonlinear scattering plays an important role in the limiting action of the sample. The concentration dependence of the optical liming is also investigated. Our results demonstrate that the optical limiting threshold decreases with increasing the silver sulfide NPs in DMSO.

Keywords: Nanoscale materials, Silver sulfide nanoparticles, Nonlinear absorption, Nonlinear scattering, Optical limiting.

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Authors: N. H. Abd Raof, H. Abu Hassan, S.K. Mohd Bakhori, S. S. Ng, Z. Hassan

Abstract:

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Keywords: HRXRD, nitrides, PL, quaternary, UV-VIS.

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Authors: Khaled A. Madi

Abstract:

Induction motors are being used in greater numbers throughout a wide variety of industrial and commercial applications because it provides many benefits and reliable device to convert the electrical energy into mechanical motion. In some application it-s desired to control the speed of the induction motor. Because of the physics of the induction motor the preferred method of controlling its speed is to vary the frequency of the AC voltage driving the motor. In recent years, with the microcontroller incorporated into an appliance it becomes possible to use it to generate the variable frequency AC voltage to control the speed of the induction motor. This study investigates the microcontroller based variable frequency power inverter. the microcontroller is provide the variable frequency pulse width modulation (PWM) signal that control the applied voltage on the gate drive, which is provides the required PWM frequency with less harmonics at the output of the power inverter. The fully controlled bridge voltage source inverter has been implemented with semiconductors power devices isolated gate bipolar transistor (IGBT), and the PWM technique has been employed in this inverter to supply the motor with AC voltage. The proposed drive system for three & single phase power inverter is simulated using Matlab/Simulink. The Matlab Simulation Results for the proposed system were achieved with different SPWM. From the result a stable variable frequency inverter over wide range has been obtained and a good agreement has been found between the simulation and hardware of a microcontroller based single phase inverter.

Keywords: Power, inverter, PWM, microcontroller.

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