Search results for: semiconductor detector.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 336

Search results for: semiconductor detector.

276 Asynchronous Sequential Machines with Fault Detectors

Authors: Seong Woo Kwak, Jung-Min Yang

Abstract:

A strategy of fault diagnosis and tolerance for asynchronous sequential machines is discussed in this paper. With no synchronizing clock, it is difficult to diagnose an occurrence of permanent or stuck-in faults in the operation of asynchronous machines. In this paper, we present a fault detector comprised of a timer and a set of static functions to determine the occurrence of faults. In order to realize immediate fault tolerance, corrective control theory is applied to designing a dynamic feedback controller. Existence conditions for an appropriate controller and its construction algorithm are presented in terms of reachability of the machine and the feature of fault occurrences.

Keywords: Asynchronous sequential machines, corrective control, fault diagnosis and tolerance, fault detector.

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275 Evaluation of the Discoloration of Methyl Orange Using Black Sand as Semiconductor through Photocatalytic Oxidation and Reduction

Authors: P. Acosta-Santamaría, A. Ibatá-Soto, A. López-Vásquez

Abstract:

Organic compounds in wastewaters coming from textile and pharmaceutical industry generated multiple harmful effects on the environment and the human health. One of them is the methyl orange (MeO), an azoic dye considered to be a recalcitrant compound. The heterogeneous photocatalysis emerges as an alternative for treating this type of hazardous compounds, through the generation of OH radicals using radiation and a semiconductor oxide. According to the author’s knowledge, catalysts such as TiO2 doped with metals show high efficiency in degrading MeO; however, this presents economic limitations on industrial scale. Black sand can be considered as a naturally doped catalyst because in its structure is common to find compounds such as titanium, iron and aluminum oxides, also elements such as zircon, cadmium, manganese, etc. This study reports the photocatalytic activity of the mineral black sand used as semiconductor in the discoloration of MeO by oxidation and reduction photocatalytic techniques. For this, magnetic composites from the mineral were prepared (RM, M1, M2 and NM) and their activity were tested through MeO discoloration while TiO2 was used as reference. For the fractions, chemical, morphological and structural characterizations were performed using Scanning Electron Microscopy with Energy Dispersive X-Ray (SEM-EDX), X-Ray Diffraction (XRD) and X-Ray Fluorescence (XRF) analysis. M2 fraction showed higher MeO discoloration (93%) in oxidation conditions at pH 2 and it could be due to the presence of ferric oxides. However, the best result to reduction process was using M1 fraction (20%) at pH 2, which contains a higher titanium percentage. In the first process, hydrogen peroxide (H2O2) was used as electron donor agent. According to the results, black sand mineral can be used as natural semiconductor in photocatalytic process. It could be considered as a photocatalyst precursor in such processes, due to its low cost and easy access.

Keywords: Black sand mineral, methyl orange, oxidation, photocatalysis, reduction.

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274 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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273 Operation Assay of an Industrial Single-Source – Single-Detector Gamma CT Using MCNP4C Code Simulation and Experimental Test Comparisons

Authors: M. Ghanadi, M. Rezazadeh*, M. Ardeshiri, R. Gholipour Peyvandi, M. Jafarzadeh, M. Shahriari, M.Rezaei Rad, Z. Gholamzadeh

Abstract:

A 3D industrial computed tomography (CT) manufactured based on a first generation CT systems, single-source – single-detector, was evaluated. Operation accuracy assessment of the manufactured system was achieved using simulation in comparison with experimental tests. 137Cs and 60Co were used as a gamma source. Simulations were achieved using MCNP4C code. Experimental tests of 137Cs were in good agreement with the simulations

Keywords: Gamma source, Industrial CT, MCNP4C, Operation assessment

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272 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.

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271 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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270 FWM Wavelength Conversion Analysis in a 3-Integrated Portion SOA and DFB Laser using Coupled Wave Approach and FD-BPM Method

Authors: M. K. Moazzam, A. Salmanpour, M. Nirouei

Abstract:

In this paper we have numerically analyzed terahertzrange wavelength conversion using nondegenerate four wave mixing (NDFWM) in a SOA integrated DFB laser (experiments reported both in MIT electronics and Fujitsu research laboratories). For analyzing semiconductor optical amplifier (SOA), we use finitedifference beam propagation method (FDBPM) based on modified nonlinear SchrÖdinger equation and for distributed feedback (DFB) laser we use coupled wave approach. We investigated wavelength conversion up to 4THz probe-pump detuning with conversion efficiency -5dB in 1THz probe-pump detuning for a SOA integrated quantum-well

Keywords: distributed feedback laser, nondegenerate fourwave mixing, semiconductor optical amplifier, wavelengthconversion

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269 Metal-Oxide-Semiconductor-Only Process Corner Monitoring Circuit

Authors: Davit Mirzoyan, Ararat Khachatryan

Abstract:

A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: Detection, monitoring, process corner, process variation.

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268 Non-Contact Digital Music Instrument Using Light Sensing Technology

Authors: Aishwarya Ravichandra, Kirtana Kirtivasan, Adithi Mahesh, Ashwini S.Savanth

Abstract:

A Non-Contact Digital Music System has been conceptualized and implemented to create a new era of digital music. This system replaces the strings of a traditional stringed instrument with laser beams to avoid bruising of the user’s hand. The system consists of seven laser modules, detector modules and distance sensors that form the basic hardware blocks of this instrument. Arduino ATmega2560 microcontroller is used as the primary interface between the hardware and the software. MIDI (Musical Instrument Digital Interface) is used as the protocol to establish communication between the instrument and the virtual synthesizer software.

Keywords: Arduino, Detector, Laser, MIDI, NOTE ON, NOTE OFF, PITCH BEND, Sharp IR distance sensor.

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267 Sensorless Commutation Control of Switched Reluctance Motor

Authors: N.H. Mvungi

Abstract:

This paper addresses control of commutation of switched reluctance (SR) motor without the use of a physical position detector. Rotor position detection schemes for SR motor based on magnetisation characteristics of the motor use normal excitation or applied current /voltage pulses. The resulting schemes are referred to as passive or active methods respectively. The research effort is in realizing an economical sensorless SR rotor position detector that is accurate, reliable and robust to suit a particular application. An effective and reliable means of generating commutation signals of an SR motor based on inductance profile of its stator windings determined using active probing technique is presented. The scheme has been validated online using a 4-phase 8/6 SR motor and an 8-bit processor.

Keywords: Position detection, rotor position, sensorless, switched reluctance, SR.

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266 Design and Implementation of Real-Time Automatic Censoring System on Chip for Radar Detection

Authors: Imron Rosyadi, Ridha A. Djemal, Saleh A. Alshebeili

Abstract:

Design and implementation of a novel B-ACOSD CFAR algorithm is presented in this paper. It is proposed for detecting radar target in log-normal distribution environment. The BACOSD detector is capable to detect automatically the number interference target in the reference cells and detect the real target by an adaptive threshold. The detector is implemented as a System on Chip on FPGA Altera Stratix II using parallelism and pipelining technique. For a reference window of length 16 cells, the experimental results showed that the processor works properly with a processing speed up to 115.13MHz and processing time0.29 ┬Ás, thus meets real-time requirement for a typical radar system.

Keywords: CFAR, FPGA, radar.

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265 A Novel Single-Wavelength All-Optical Flip-Flop Employing Single SOA-MZI

Authors: H. Kaatuzian, M. Sedghi, S. Khatami

Abstract:

In this paper, by exploiting a single semiconductor optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an integratable all-optical flip-flop (AOFF) is proposed. It is composed of a SOA-MZI with a bidirectional coupler at the output. Output signals of both bar and crossbar of the SOA-MZI is fed back to SOAs located in the arms of the Mach-Zehnder Interferometer (MZI). The injected photon-rates to the SOAs are modulated by feedback signals in order to form optical flip-flop. According to numerical analysis, Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration with the full width at half-maximum criterion, can switch the states of the SR-AOFF. Also simulation results show that the SR-AOFF has the contrast ratio of 8.5 dB between two states with the transition time of nearly 20 ps.

Keywords: All Optical, Flip-Flop, Mach-Zehnder Interferometer (MZI), Semiconductor Optical Amplifier (SOA).

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264 A Cooperative Weighted Discriminator Energy Detector Technique in Fading Environment

Authors: Muhammad R. Alrabeiah, Ibrahim S. Alnomay

Abstract:

The need in cognitive radio system for a simple, fast, and independent technique to sense the spectrum occupancy has led to the energy detection approach. Energy detector is known by its dependency on noise variation in the system which is one of its major drawbacks. In this paper, we are aiming to improve its performance by utilizing a weighted collaborative spectrum sensing, it is similar to the collaborative spectrum sensing methods introduced previously in the literature. These weighting methods give more improvement for collaborative spectrum sensing as compared to no weighting case. There is two method proposed in this paper: the first one depends on the channel status between each sensor and the primary user while the second depends on the value of the energy measured in each sensor.

Keywords: Cognitive radio, Spectrum sensing, Collaborative sensors, Weighted Decisions.

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263 Research and Design on a Portable Intravehicular Ultrasonic Leak Detector for Manned Spacecraft

Authors: Yan Rongxin, Sun Wei, Li Weidan

Abstract:

Based on the acoustics cascade sound theory, the mechanism of air leak sound producing, transmitting and signal detecting has been analyzed. A formula of the sound power, leak size and air pressure in the spacecraft has been built, and the relationship between leak sound pressure and receiving direction and distance has been studied. The center frequency in millimeter diameter leak is more than 20 kHz. The situation of air leaking from spacecraft to space has been simulated and an experiment of different leak size and testing distance and direction has been done. The sound pressure is in direct proportion to the cosine of the angle of leak to sensor. The portable ultrasonic leak detector has been developed, whose minimal leak rate is 10-1 Pa·m3/s, the testing radius is longer than 20 mm, the mass is less than 1.0 kg, and the electric power is less than 2.2 W.

Keywords: Leak detection, manned spacecraft, ultrasonic, sound transmitting.

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262 The Motivating and Demotivating Factors at the Learning of English Center in Thailand

Authors: Bella Llego

Abstract:

This study aims to investigate the motivating and de-motivating factors that affect the learning ability of students attending the English Learning Center in Thailand. The subjects of this research were 20 students from the Hana Semiconductor Co., Limited. The data were collected by using questionnaire and analyzed using the SPSS program for the percentage, mean and standard deviation. The research results show that the main motivating factor in learning English at Hana Semiconductor Co., Ltd. is that it would help the employees to communicate with foreign customers and managers. Other reasons include the need to read and write e-mails, and reports in English, as well as to increase overall general knowledge. The main de-motivating factor is that there is a lot of vocabulary to remember when learning English. Another de-motivating factor is that when homework is given, the students have no time to complete the tasks required of them at the end of the working day.

Keywords: Motivating, demotivating, English learning center, student communicate.

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261 Charge-Pump with a Regulated Cascode Circuit for Reducing Current Mismatch in PLLs

Authors: Jae Hyung Noh, Hang Geun Jeong

Abstract:

The charge-pump circuit is an important component in a phase-locked loop (PLL). The charge-pump converts Up and Down signals from the phase/frequency detector (PFD) into current. A conventional CMOS charge-pump circuit consists of two switched current sources that pump charge into or out of the loop filter according to two logical inputs. The mismatch between the charging current and the discharging current causes phase offset and reference spurs in a PLL. We propose a new charge-pump circuit to reduce the current mismatch by using a regulated cascode circuit. The proposed charge-pump circuit is designed and simulated by spectre with TSMC 0.18-μm 1.8-V CMOS technology.

Keywords: Phase-locked loop (PLL), charge-pump, phase/frequency detector (PFD), regulated cascode.

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260 Blind Speech Separation Using SRP-PHAT Localization and Optimal Beamformer in Two-Speaker Environments

Authors: Hai Quang Hong Dam, Hai Ho, Minh Hoang Le Ngo

Abstract:

This paper investigates the problem of blind speech separation from the speech mixture of two speakers. A voice activity detector employing the Steered Response Power - Phase Transform (SRP-PHAT) is presented for detecting the activity information of speech sources and then the desired speech signals are extracted from the speech mixture by using an optimal beamformer. For evaluation, the algorithm effectiveness, a simulation using real speech recordings had been performed in a double-talk situation where two speakers are active all the time. Evaluations show that the proposed blind speech separation algorithm offers a good interference suppression level whilst maintaining a low distortion level of the desired signal.

Keywords: Blind speech separation, voice activity detector, SRP-PHAT, optimal beamformer.

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259 Structural Simulation of a 4H-Sic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DC-DC Boost Converter

Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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258 Distribution of Gamma Radiation Levels in Core Sediment Samples in Gulf of Izmir: Eastern Aegean Sea, Turkey

Authors: D. Kurt, Z. U. Yümün, I. F. Barut, E. Kam

Abstract:

Since the development of the industrial revolution, industrial plants and settlements have spread widely along coastlines. This concentration of development brings environmental pollution to the seas. This study focuses on the Gulf of Izmir, a natural gulf of the Eastern Aegean Sea, located west of Turkey. Investigating marine current sediment is extremely important to detect pollution. This study considered natural radioactivity pollution of the marine environment. Ground drilling cores (the depth of each sediment is different) were taken from four different locations in the Gulf of izmir, Karşıyaka (12.5-13.5 m), Inciralti (6.5-7.5 m), Cesmealti (4.5-5 m) and Bayrakli (10-12 m). These sediment cores were put in preserving bags with weight around 1 kg, and were dried at room temperature to remove moisture. The samples were then sieved into fine powder (100 mesh), and these samples were relocated to 1000 mL polyethylene Marinelli beakers. The prepared sediments were stored for 40 days to reach radioactive equilibrium between uranium and thorium. Gamma spectrometry measurement of each sample was made using an HPGe (High-Purity Germanium) semiconductor detector. In this study, the results display that the average concentrations of the activity values are 8.4 ± 0.23 Bq kg-1, 19.6 ± 0.51 Bq kg-1, 8 ± 0.96 Bq kg-1, 1.93 ± 0.3 Bq kg-1, and 77.4 ± 0.96 Bq kg-1, respectively.

Keywords: Gamma, Gulf of Izmir, Eastern Aegean Sea, Turkey, natural radionuclides, pollution.

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257 Multiuser Detection in CDMA Fast Fading Multipath Channel using Heuristic Genetic Algorithms

Authors: Muhammad Naeem, Syed Ismail Shah, Habibullah Jamal

Abstract:

In this paper, a simple heuristic genetic algorithm is used for Multistage Multiuser detection in fast fading environments. Multipath channels, multiple access interference (MAI) and near far effect cause the performance of the conventional detector to degrade. Heuristic Genetic algorithms, a rapidly growing area of artificial intelligence, uses evolutionary programming for initial search, which not only helps to converge the solution towards near optimal performance efficiently but also at a very low complexity as compared with optimal detector. This holds true for Additive White Gaussian Noise (AWGN) and multipath fading channels. Experimental results are presented to show the superior performance of the proposed techque over the existing methods.

Keywords: Genetic Algorithm (GA), Multiple AccessInterference (MAI), Multistage Detectors (MSD), SuccessiveInterference Cancellation.

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256 Saturated Gain of Doped Multilayer Quantum Dot Semiconductor Optical Amplifiers

Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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255 Loss Analysis of Half Bridge DC-DC Converters in High-Current and Low-Voltage Applications

Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

Abstract:

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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254 Development of Quasi-Two-Dimensional Nb2O5 for Functional Electrodes of Advanced Electrochemical Systems

Authors: S. Zhuiykov, E. Kats

Abstract:

In recent times there has been a growing interest in the development of quasi-two-dimensional niobium pentoxide (Nb2O5) as a semiconductor for the potential electronic applications such as capacitors, filtration, dye-sensitised solar cells and gas sensing platforms. Therefore once the purpose is established, Nb2O5 can be prepared in a number of nano- and sub-micron-structural morphologies that include rods, wires, belts and tubes. In this study films of Nb2O5 were prepared on gold plated silicon substrate using spin-coating technique and subsequently by mechanical exfoliation. The reason this method was employed was to achieve layers of less than 15nm in thickness. The sintering temperature of the specimen was 800oC. The morphology and structural characteristics of the films were analyzed by Atomic Force Microscopy (AFM), Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).

Keywords: Mechanical exfoliation, niobium pentoxide, quazitwo- dimensional, semiconductor, sol-gel, spin-coating, two dimensional semiconductors.

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253 A Novel Dosimetry System for Computed Tomography using Phototransistor

Authors: C. M. M. Paschoal, M. L. Sobrinho, D. do N. Souza, J. Antônio Filho, L. A. P. Santos

Abstract:

Computed tomography (CT) dosimetry normally uses an ionization chamber 100 mm long to estimate the computed tomography dose index (CTDI), however some reports have already indicated that small devices could replace the long ion chamber to improve quality assurance procedures in CT dosimetry. This paper presents a novel dosimetry system based in a commercial phototransistor evaluated for CT dosimetry. Three detector configurations were developed for this system: with a single, two and four devices. Dose profile measurements were obtained with them and their angular response were evaluated. The results showed that the novel dosimetry system with the phototransistor could be an alternative for CT dosimetry. It allows to obtain the CT dose profile in details and also to estimate the CTDI in longer length than the 100 mm pencil chamber. The angular response showed that the one device detector configuration is the most adequate among the three configurations analyzed in this study.

Keywords: Computed tomography, dosimetry, photo-transistor

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252 An Exploration on Competency-Based Curricula in Integrated Circuit Design

Authors: Chih Chin Yang, Chung Shan Sun

Abstract:

In this paper the relationships between professional competences and school curriculain IC design industry are explored. The semi-structured questionnaire survey and focus group interview is the research method. Study participants are graduates of microelectronics engineering professional departments who are currently employed in the IC industry. The IC industries are defined as the electronic component manufacturing industry and optical-electronic component manufacturing industry in the semiconductor industry and optical-electronic material devices, respectively. Study participants selected from IC design industry include IC engineering and electronic & semiconductor engineering. The human training with IC design professional competence in microelectronics engineering professional departments is explored in this research. IC professional competences of human resources in the IC design industry include general intelligence and professional intelligence.

Keywords: IC design, curricula, competence, task, duty.

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251 A Sub-Pixel Image Registration Technique with Applications to Defect Detection

Authors: Zhen-Hui Hu, Jyh-Shong Ju, Ming-Hwei Perng

Abstract:

This paper presents a useful sub-pixel image registration method using line segments and a sub-pixel edge detector. In this approach, straight line segments are first extracted from gray images at the pixel level before applying the sub-pixel edge detector. Next, all sub-pixel line edges are mapped onto the orientation-distance parameter space to solve for line correspondence between images. Finally, the registration parameters with sub-pixel accuracy are analytically solved via two linear least-square problems. The present approach can be applied to various fields where fast registration with sub-pixel accuracy is required. To illustrate, the present approach is applied to the inspection of printed circuits on a flat panel. Numerical example shows that the present approach is effective and accurate when target images contain a sufficient number of line segments, which is true in many industrial problems.

Keywords: Defect detection, Image registration, Straight line segment, Sub-pixel.

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250 Dynamic Fast Tracing and Smoothing Technique for Geiger-Muller Dosimeter

Authors: M. Ebrahimi Shohani, S. M. Taheri, S. M. Golgoun

Abstract:

Environmental radiation dosimeter is a kind of detector that measures the dose of the radiation area. Dosimeter registers the radiation and converts it to the dose according to the calibration parameters. The limit of a dose is different at each radiation area and this limit should be notified and reported to the user and health physics department. The stochastic nature of radiation is the reason for the fluctuation of any gamma detector dosimetry. In this research we investigated Geiger-Muller type of dosimeter and tried to improve the dose measurement. Geiger-Muller dosimeter is a counter that converts registered radiation to the dose. Therefore, for better data analysis, it is necessary to apply an algorithm to smooth statistical variations of registered radiation. We proposed a method to smooth these fluctuations much more and also proposed a dynamic way to trace rapid changes of radiations. Results show that our method is fast and reliable method in comparison the traditional method.

Keywords: Geiger-Muller, radiation detection, smoothing algorithms, dosimeter, dose calculation.

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249 Model Predictive Control Using Thermal Inputs for Crystal Growth Dynamics

Authors: Takashi Shimizu, Tomoaki Hashimoto

Abstract:

Recently, crystal growth technologies have made progress by the requirement for the high quality of crystal materials. To control the crystal growth dynamics actively by external forces is useuful for reducing composition non-uniformity. In this study, a control method based on model predictive control using thermal inputs is proposed for crystal growth dynamics of semiconductor materials. The control system of crystal growth dynamics considered here is governed by the continuity, momentum, energy, and mass transport equations. To establish the control method for such thermal fluid systems, we adopt model predictive control known as a kind of optimal feedback control in which the control performance over a finite future is optimized with a performance index that has a moving initial time and terminal time. The objective of this study is to establish a model predictive control method for crystal growth dynamics of semiconductor materials.

Keywords: Model predictive control, optimal control, crystal growth, process control.

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248 Evaluation of Edge Configuration in Medical Echo Images Using Genetic Algorithms

Authors: Ching-Fen Jiang

Abstract:

Edge detection is usually the first step in medical image processing. However, the difficulty increases when a conventional kernel-based edge detector is applied to ultrasonic images with a textural pattern and speckle noise. We designed an adaptive diffusion filter to remove speckle noise while preserving the initial edges detected by using a Sobel edge detector. We also propose a genetic algorithm for edge selection to form complete boundaries of the detected entities. We designed two fitness functions to evaluate whether a criterion with a complex edge configuration can render a better result than a simple criterion such as the strength of gradient. The edges obtained by using a complex fitness function are thicker and more fragmented than those obtained by using a simple fitness function, suggesting that a complex edge selecting scheme is not necessary for good edge detection in medical ultrasonic images; instead, a proper noise-smoothing filter is the key.

Keywords: edge detection, ultrasonic images, speckle noise

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247 Influence of Measurement System on Negative Bias Temperature Instability Characterization: Fast BTI vs Conventional BTI vs Fast Wafer Level Reliability

Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

Abstract:

Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

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