Search results for: semiconductor detector.

Authors: Seung Hwan Park, Cheng-Sool Park, Jun Seok Kim, Youngji Yoo, Daewoong An, Jun-Geol Baek

Abstract:

Depending on the big data analysis becomes important, yield prediction using data from the semiconductor process is essential. In general, yield prediction and analysis of the causes of the failure are closely related. The purpose of this study is to analyze pattern affects the final test results using a die map based clustering. Many researches have been conducted using die data from the semiconductor test process. However, analysis has limitation as the test data is less directly related to the final test results. Therefore, this study proposes a framework for analysis through clustering using more detailed data than existing die data. This study consists of three phases. In the first phase, die map is created through fail bit data in each sub-area of die. In the second phase, clustering using map data is performed. And the third stage is to find patterns that affect final test result. Finally, the proposed three steps are applied to actual industrial data and experimental results showed the potential field application.

Keywords: Die-Map Clustering, Feature Extraction, Pattern Recognition, Semiconductor Manufacturing Process.

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Authors: A. A. Khan, M. Naeem, S. Bashir, S. I. Shah

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In this paper we propose a Particle Swarm heuristic optimized Multi-Antenna (MA) system. Efficient MA systems detection is performed using a robust stochastic evolutionary computation algorithm based on movement and intelligence of swarms. This iterative particle swarm optimized (PSO) detector significantly reduces the computational complexity of conventional Maximum Likelihood (ML) detection technique. The simulation results achieved with this proposed MA-PSO detection algorithm show near optimal performance when compared with ML-MA receiver. The performance of proposed detector is convincingly better for higher order modulation schemes and large number of antennas where conventional ML detector becomes non-practical.

Keywords: Multi Antenna (MA), Multi-input Multi-output(MIMO), Particle Swarm Optimization (PSO), ML detection.

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Authors: Tallataf Rasheed, Adnan Rashdi, Ahmad Naeem Akhtar

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The accurate spectrum sensing is a fundamental requirement of dynamic spectrum access for deployment of Cognitive Radio Network (CRN). To acheive this requirement a Reliability factors based Fuzzy Logic (RFL) Scheme for Spectrum Sensing has been proposed in this paper. Cognitive Radio User (CRU) predicts the presence or absence of Primary User (PU) using energy detector and calculates the Reliability factors which are SNR of sensing node, threshold of energy detector and decision difference of each node with other nodes in a cooperative spectrum sensing environment. Then the decision of energy detector is combined with Reliability factors of sensing node using Fuzzy Logic. These Reliability Factors used in RFL Scheme describes the reliability of decision made by a CRU to improve the local spectrum sensing. This Fuzzy combining scheme provides the accuracy of decision made by sensornode. The simulation results have shown that the proposed technique provide better PU detection probability than existing Spectrum Sensing Techniques.

Keywords: Cognitive radio, spectrum sensing, energy detector, reliability factors, fuzzy logic.

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Authors: Kadam Bhambri, Neena Gupta

Abstract:

All optical wavelength conversion is essential in present day optical networks for transparent interoperability, contention resolution, and wavelength routing. The incorporation of all optical wavelength convertors leads to better utilization of the network resources and hence improves the efficiency of optical networks. Wavelength convertors that can work with Dispersion Managed (DM) solitons are attractive due to their superior transmission capabilities. In this paper, wavelength conversion for dispersion managed soliton signals was demonstrated at 100 Gbps through semiconductor optical amplifier and an optical filter. The wavelength conversion was achieved for a 1550 nm input signal to1555nm output signal. The output signal was measured in terms of BER, Q factor and system margin.    

Keywords: All optical wavelength conversion, dispersion managed solitons, semiconductor optical amplifier, cross gain modulation.

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Authors: Mohamed Fathy Heweage, Xiao Wen, Ayman Mokhtar, Ahmed Eldamarawy

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In this paper, we are interested in modeling, simulation, and measurement of the laser spot position with a quadrant detector. We enhance detection and tracking of semi-laser weapon decoding system based on microcontroller. The system receives the reflected pulse through quadrant detector and processes the laser pulses through a processing circuit, a microcontroller decoding laser pulse reflected by the target. The seeker accuracy will be enhanced by the decoding system, the laser detection time based on the receiving pulses number is reduced, a gate is used to limit the laser pulse width. The model is implemented based on Pulse Repetition Frequency (PRF) technique with two microcontroller units (MCU). MCU1 generates laser pulses with different codes. MCU2 decodes the laser code and locks the system at the specific code. The codes EW selected based on the two selector switches. The system is implemented and tested in Proteus ISIS software. The implementation of the full position determination circuit with the detector is produced. General system for the spot position determination was performed with the laser PRF for incident radiation and the mechanical system for adjusting system at different angles. The system test results show that the system can detect the laser code with only three received pulses based on the narrow gate signal, and good agreement between simulation and measured system performance is obtained.

Keywords: 4-quadrant detector, pulse code detection, laser guided weapons, pulse repetition frequency, ATmega 32 microcontrollers.

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Authors: Matthias Kirmse, Uwe Petersohn, Elief Paffrath

Abstract:

As in today's semiconductor industries test costs can make up to 50 percent of the total production costs, an efficient test error detection becomes more and more important. In this paper, we present a new machine learning approach to test error detection that should provide a faster recognition of test system faults as well as an improved test error recall. The key idea is to learn a classifier ensemble, detecting typical test error patterns in wafer test results immediately after finishing these tests. Since test error detection has not yet been discussed in the machine learning community, we define central problem-relevant terms and provide an analysis of important domain properties. Finally, we present comparative studies reflecting the failure detection performance of three individual classifiers and three ensemble methods based upon them. As base classifiers we chose a decision tree learner, a support vector machine and a Bayesian network, while the compared ensemble methods were simple and weighted majority vote as well as stacking. For the evaluation, we used cross validation and a specially designed practical simulation. By implementing our approach in a semiconductor test department for the observation of two products, we proofed its practical applicability.

Keywords: Ensemble methods, fault detection, machine learning, semiconductor test.

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Authors: Fu-Hsuan Huang, Po-Jung Yuan, Kang-Ping Lin, Hen-Hong Chang, Cheng-Lun Tsai

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Photoplethysmography is a simple measurement of the variation in blood volume in tissue. It detects the pulse signal of heart beat as well as the low frequency signal of vasoconstriction and vasodilation. The transmission type measurement is limited to only a few specific positions for example the index finger that have a short path length for light. The reflectance type measurement can be conveniently applied on most parts of the body surface. This study analyzed the factors that determine the quality of reflectance photoplethysmograph signal including the emitter-detector distance, wavelength, light intensity, and optical properties of skin tissue. Light emitting diodes (LEDs) with four different visible wavelengths were used as the light emitters. A phototransistor was used as the light detector. A micro translation stage adjusts the emitter-detector distance from 2 mm to 15 mm. The reflective photoplethysmograph signals were measured on different sites. The optimal emitter-detector distance was chosen to have a large dynamic range for low frequency drifting without signal saturation and a high perfusion index. Among these four wavelengths, a yellowish green (571nm) light with a proper emitter-detection distance of 2mm is the most suitable for obtaining a steady and reliable reflectance photoplethysmograph signal

Keywords: Reflectance photoplethysmograph, Perfusion index, Signal-to-noise ratio

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Authors: I-Huan Chiu, Kazuhiko Ninomiya, Shin’ichiro Takeda, Meito Kajino, Miho Katsuragawa, Shunsaku Nagasawa, Atsushi Shinohara, Tadayuki Takahashi, Ryota Tomaru, Shin Watanabe, Goro Yabu

Abstract:

In recent years, a nondestructive elemental analysis method based on muonic X-ray measurements has been developed and applied for various samples. Muonic X-rays are emitted after the formation of a muonic atom, which occurs when a negatively charged muon is captured in a muon atomic orbit around the nucleus. Because muonic X-rays have a higher energy than electronic X-rays due to the muon mass, they can be measured without being absorbed by a material. Thus, estimating the two-dimensional (2D) elemental distribution of a sample became possible using an X-ray imaging detector. In this work, we report a non-destructive imaging experiment using muonic X-rays at Japan Proton Accelerator Research Complex. The irradiated target consisted of a polypropylene material, and a double-sided silicon strip detector, which was developed as an imaging detector for astronomical obervation, was employed. A peak corresponding to muonic X-rays from the carbon atoms in the target was clearly observed in the energy spectrum at an energy of 14 keV, and 2D visualizations were successfully reconstructed to reveal the projection image from the target. This result demonstrates the potential of the nondestructive elemental imaging method that is based on muonic X-ray measurement. To obtain a higher position resolution for imaging a smaller target, a new detector system will be developed to improve the statistical analysis in further research.

Keywords: DSSD, muon, muonic X-ray, imaging, non-destructive analysis

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: Cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier.

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Authors: Ahmad Alshammari, Abdulaziz Bagabas

Abstract:

Rhodamine B (RB) is a toxic dye used extensively in textile industry, which must be remediated before its drainage to environment. In the present study, supported gold nanoparticles on commercially available titania and zincite were successfully prepared and then their activity on the photodegradation of RB under UV A light irradiation were evaluated. The synthesized photocatalysts were characterized by ICP, BET, XRD, and TEM. Kinetic results showed that Au/TiO2 was an inferior photocatalyst to Au/ZnO. This observation could be attributed to the strong reflection of UV irradiation by gold nanoparticles over TiO2 support.

Keywords: Supported AuNPs, Semiconductor photocatalyst, Photodegradation, Rhodamine B.

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Authors: Gyoutae Park, Woosuk Kim, Sangguk Ahn, Seungmo Kim, Minjun Kim, Jinhan Lee, Youngdo Jo, Jongsam Moon, Hiesik Kim

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In this research, we designed a remote system to test parameters of gas detectors such as gas concentration and initial response time. This testing system is available to measure two gas instruments simultaneously. First of all, we assembled an experimental jig with a square structure. Those parts are included with a glass flask, two high-quality cameras, and two Ethernet modems for transmitting data. This remote gas detector testing system extracts numerals from videos with continually various gas concentrations while LCDs show photographs from cameras. Extracted numeral data are received to a laptop computer through Ethernet modem. And then, the numerical data with gas concentrations and the measured initial response speeds are recorded and graphed. Our remote testing system will be diversely applied on gas detector’s test and will be certificated in domestic and international countries.

Keywords: Gas leakage detector, inspection instrument, extracting numerals, concentration.

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Authors: S.K. Mazloomi, Nasri b. Sulaiman

Abstract:

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Keywords: Power switch, PWM, Semiconductor switch, Waterelectrolysis

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Authors: Moustafa Ahmed, Ahmed Bakry, Fumio Koyama

Abstract:

We report on the use of strong external optical feedback to enhance the modulation response of semiconductor lasers over a frequency passband around modulation frequencies higher than 60 GHz. We show that this modulation enhancement is a type of photon-photon resonance (PPR) of oscillating modes in the external cavity formed between the laser and the external reflector. The study is based on a time-delay rate equation model that takes into account both the strong feedback and multiple reflections in the external cavity. We examine the harmonic and intermodulation distortions associated with single and two-tone modulations in the mm-wave band of the resonant modulation. We show that compared with solitary lasers modulated around the carrier-photon resonance frequency, the present mm-wave modulated signal has lower distortions.

Keywords: Distortion, intensity modulation, optical feedback, semiconductor laser.

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Authors: Lilia M. Fernando, Matthew K. Vasher, Evangelyn C. Alocilja

Abstract:

This paper describes the development of a DNA-based nanobiosensor to detect the dengue virus in mosquito using electrically active magnetic (EAM) nanoparticles as concentrator and electrochemical transducer. The biosensor detection encompasses two sets of oligonucleotide probes that are specific to the dengue virus: the detector probe labeled with the EAM nanoparticles and the biotinylated capture probe. The DNA targets are double hybridized to the detector and the capture probes and concentrated from nonspecific DNA fragments by applying a magnetic field. Subsequently, the DNA sandwiched targets (EAM-detector probe– DNA target–capture probe-biotin) are captured on streptavidin modified screen printed carbon electrodes through the biotinylated capture probes. Detection is achieved electrochemically by measuring the oxidation–reduction signal of the EAM nanoparticles. Results indicate that the biosensor is able to detect the redox signal of the EAM nanoparticles at dengue DNA concentrations as low as 10 ng/μl.

Keywords: Dengue, magnetic nanoparticles, mosquito, nanobiosensor.

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Authors: A. A. Sharma, B. J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers’ diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: Quasilongitudinal, reflection and transmission, semiconductors, acoustics.

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Authors: M. D. Kokate, T. R. Sontakke, P. W. Wani

Abstract:

This paper deals with an adaptive multiuser detector for direct sequence code division multiple-access (DS-CDMA) systems. A modified receiver, precombinig LMMSE is considered under time varying channel environment. Detector updating is performed with two criterions, mean square estimation (MSE) and MOE optimization technique. The adaptive implementation issues of these two schemes are quite different. MSE criterion updates the filter weights by minimizing error between data vector and adaptive vector. MOE criterion together with canonical representation of the detector results in a constrained optimization problem. Even though the canonical representation is very complicated under time varying channels, it is analyzed with assumption of average power profile of multipath replicas of user of interest. The performance of both schemes is studied for practical SNR conditions. Results show that for poor SNR, MSE precombining LMMSE is better than the blind precombining LMMSE but for greater SNR, MOE scheme outperforms with better result.

Keywords: LMMSE, MOE, MUD.

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Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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Authors: J. S. Kim

Abstract:

This paper presents a 0.13-µm Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360° phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2° and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm².

Keywords: CMOS, vector modulator, beamforming, wireless backhaul, ISM.

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Authors: M. Gómez-Gómez, M. E. Sánchez-Vergara

Abstract:

Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.

Keywords: Electrical properties, optical gap, phthalocyanine, thin film.

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Authors: Syahril Ridzuan Ab Rahim, Ibrahim Ahmad, Mohd Azizi Chik, Ahmad Zafir Md. Rejab, and U. Hashim

Abstract:

This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis.

Keywords: Advanced Productivity Family (APF), Complementary Metal Oxide Semiconductor (CMOS), Manufacturing Execution Systems (MES), Work In Progress (WIP).

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Authors: Pham Ngoc Thang, Le Thai Hung, Nguyen Quang Bau

Abstract:

The influence of confined acoustic phonons on the Shubnikov – de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number m characterizing the effect of confined acoustic phonons. When m goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the GaAs:Si/GaAs:Be DSSL and compared with other studies. Results show that the Shubnikov – de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.

Keywords: Shubnikov–de Haas magnetoresistance oscillations, quantum kinetic equation, confined acoustic phonons, laser radiation, doped semiconductor superlattices.

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Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.

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Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa₂Ca₂Cu₃O₁₀ as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF₂ as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF₂)^NInSb(Si/MgF₂)^N named S.I, and (Si/MgF₂)^NHgBa₂Ca₂Cu₃O₁₀(Si/MgF₂)^N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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Authors: Wen-Yuh Jywe, Bor-Jeng Lin, Jing-Chung Shen, Jeng-Dao Lee, Hsueh-Liang Huang, Ming-Chen Cho

Abstract:

The dynamical contouring error is a critical element for the accuracy of machine tools. The contouring error is defined as the difference between the processing actual path and commanded path, which is implemented by following the command curves from feeding driving system in machine tools. The contouring error is resulted from various factors, such as the external loads, friction, inertia moment, feed rate, speed control, servo control, and etc. Thus, the study proposes a 2D compensating system for the contouring accuracy of machine tools. Optical method is adopted by using stable frequency laser diode and the high precision position sensor detector (PSD) to performno-contact measurement. Results show the related accuracy of position sensor detector (PSD) of 2D contouring accuracy compensating system was ±1.5 μm for a calculated range of ±3 mm, and improvement accuracy is over 80% at high-speed feed rate.

Keywords: Position sensor detector, laser diode, contouring accuracy, machine tool.

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Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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Authors: Arvind Srivastav, Tarun Kanti Bhattacharyya

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The north-eastern, Himalayan, and Eastern Ghats Belt of India comprise of earthquake-prone, remote, and hilly terrains. Earthquakes have caused enormous damages in these regions in the past. A wireless sensor network based earthquake early warning system (EEWS) is being developed to mitigate the damages caused by earthquakes. It consists of sensor nodes, distributed over the region, that perform majority voting of the output of the seismic sensors in the vicinity, and relay a message to a base station to alert the residents when an earthquake is detected. At the heart of the EEWS is a low-power two-stage seismic sensor that continuously tracks seismic events from incoming three-axis accelerometer signal at the first-stage, and, in the presence of a seismic event, triggers the second-stage P-wave detector that detects the onset of P-wave in an earthquake event. The parameters of the P-wave detector have been optimized for minimizing detection time and maximizing the accuracy of detection.Working of the sensor scheme has been verified with seven earthquakes data retrieved from IRIS. In all test cases, the scheme detected the onset of P-wave accurately. Also, it has been established that the P-wave onset detection time reduces linearly with the sampling rate. It has been verified with test data; the detection time for data sampled at 10Hz was around 2 seconds which reduced to 0.3 second for the data sampled at 100Hz.

Keywords: Earthquake early warning system, EEWS, STA/LTA, polarization, wavelet, event detector, P-wave detector.

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Authors: Youngji Yoo, Cheong-Sool Park, Jun Seok Kim, Young-Hak Lee, Sung-Shick Kim, Jun-Geol Baek

Abstract:

In the semiconductor manufacturing process, large amounts of data are collected from various sensors of multiple facilities. The collected data from sensors have several different characteristics due to variables such as types of products, former processes and recipes. In general, Statistical Quality Control (SQC) methods assume the normality of the data to detect out-of-control states of processes. Although the collected data have different characteristics, using the data as inputs of SQC will increase variations of data, require wide control limits, and decrease performance to detect outof- control. Therefore, it is necessary to separate similar data groups from mixed data for more accurate process control. In the paper, we propose a regression tree using split algorithm based on Pearson distribution to handle non-normal distribution in parametric method. The regression tree finds similar properties of data from different variables. The experiments using real semiconductor manufacturing process data show improved performance in fault detecting ability.

Keywords: Semiconductor, non-normal mixed process data, clustering, Statistical Quality Control (SQC), regression tree, Pearson distribution system.

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Authors: Q. Zafar, R. Akram, Kh.S. Karimov, T.A. Khan, M. Farooq, M.M. Tahir

Abstract:

In this study we present the effect of elevated temperatures from 300K to 400K on the electrical properties of copper Phthalocyanine (CuPc) based organic field effect transistors (OFET). Thin films of organic semiconductor CuPc (40nm) and semitransparent Al (20nm) were deposited in sequence, by vacuum evaporation on a glass substrate with previously deposited Ag source and drain electrodes with a gap of 40 μm. Under resistive mode of operation, where gate was suspended it was observed that drain current of this organic field effect transistor (OFET) show an increase with temperature. While in grounded gate condition metal (aluminum) – semiconductor (Copper Phthalocyanine) Schottky junction dominated the output characteristics and device showed switching effect from low to high conduction states like Zener diode at higher bias voltages. This threshold voltage for switching effect has been found to be inversely proportional to temperature and shows an abrupt decrease after knee temperature of 360K. Change in dynamic resistance (Rd = dV/dI) with respect to temperature was observed to be -1%/K.

Keywords: Copper Phthalocyanine, Metal-Semiconductor Schottky Junction, Organic Field Effect Transistor, Switching effect, Temperature Sensor

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