Search results for: porous silicon
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 425

Search results for: porous silicon

185 Two-Dimensional Observation of Oil Displacement by Water in a Petroleum Reservoir through Numerical Simulation and Application to a Petroleum Reservoir

Authors: Ahmad Fahim Nasiry, Shigeo Honma

Abstract:

We examine two-dimensional oil displacement by water in a petroleum reservoir. The pore fluid is immiscible, and the porous media is homogenous and isotropic in the horizontal direction. Buckley-Leverett theory and a combination of Laplacian and Darcy’s law are used to study the fluid flow through porous media, and the Laplacian that defines the dispersion and diffusion of fluid in the sand using heavy oil is discussed. The reservoir is homogenous in the horizontal direction, as expressed by the partial differential equation. Two main factors which are observed are the water saturation and pressure distribution in the reservoir, and they are evaluated for predicting oil recovery in two dimensions by a physical and mathematical simulation model. We review the numerical simulation that solves difficult partial differential reservoir equations. Based on the numerical simulations, the saturation and pressure equations are calculated by the iterative alternating direction implicit method and the iterative alternating direction explicit method, respectively, according to the finite difference assumption. However, to understand the displacement of oil by water and the amount of water dispersion in the reservoir better, an interpolated contour line of the water distribution of the five-spot pattern, that provides an approximate solution which agrees well with the experimental results, is also presented. Finally, a computer program is developed to calculate the equation for pressure and water saturation and to draw the pressure contour line and water distribution contour line for the reservoir.

Keywords: Numerical simulation, immiscible, finite difference, IADI, IADE, waterflooding.

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184 Ni Metallization on SiGe Nanowire

Authors: Y. Li, K. Buddharaju, X. P. Wang

Abstract:

The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.

Keywords: SiGe, nanowires, germanosilicide.

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183 Nonlinear Thermal Expansion Model for SiC/Al

Authors: T.R. Sahroni, S. Sulaiman, I. Romli, M.R. Salleh, H.A. Ariff

Abstract:

The thermal expansion behaviour of silicon carbide (SCS-2) fibre reinforced 6061 aluminium matrix composite subjected to the influenced thermal mechanical cycling (TMC) process were investigated. The thermal stress has important effect on the longitudinal thermal expansion coefficient of the composites. The present paper used experimental data of the thermal expansion behaviour of a SiC/Al composite for temperatures up to 370°C, in which their data was used for carrying out modelling of theoretical predictions.

Keywords: Nonlinear, thermal, fibre reinforced, metal matrixcomposites

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182 Experimental Investigation of Adjacent Hall Structures Parameters

Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

Abstract:

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

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181 Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si

Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Abstract:

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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180 Predicting Depth of Penetration in Abrasive Waterjet Cutting of Polycrystalline Ceramics

Authors: S. Srinivas, N. Ramesh Babu

Abstract:

This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained with Silicon Carbide (SiC) blocks.

Keywords: Abrasive waterjet cutting, analytical modeling, ceramics, microcutting and intergranular cracking.

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179 The Effects of RCA Clean Variables on Particle Removal Efficiency

Authors: Siti Kudnie Sahari, Jane Chai Hai Sing, Khairuddin Ab. Hamid

Abstract:

Shrunken patterning for integrated device manufacturing requires surface cleanliness and surface smoothness in wet chemical processing [1]. It is necessary to control all process parameters perfectly especially for the common cleaning technique RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and effect of surface preparation parameters are discussed. The properties of RCA wet chemical processing in silicon technology is based on processing time, temperature, concentration and megasonic power of SC-1 and QDR. An improvement of wafer surface preparation by the enhanced variables of the wet cleaning chemical process is proposed.

Keywords: RCA, SC-1, SC-2, QDR

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178 Acoustic Finite Element Analysis of a Slit Model with Consideration of Air Viscosity

Authors: M. Sasajima, M. Watanabe, T. Yamaguchi Y. Kurosawa, Y. Koike

Abstract:

In very narrow pathways, the speed of sound propagation and the phase of sound waves change due to the air viscosity. We have developed a new finite element method (FEM) that includes the effects of air viscosity for modeling a narrow sound pathway. This method is developed as an extension of the existing FEM for porous sound-absorbing materials. The numerical calculation results for several three-dimensional slit models using the proposed FEM are validated against existing calculation methods.

Keywords: Simulation, FEM, air viscosity, slit.

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177 SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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176 Mesoporous Material Nanofibers by Electrospinning

Authors: Sh. Sohrabnezhad, A. Jafarzadeh

Abstract:

In this paper, MCM-41 mesoporous material nanofibers were synthesized by an electrospinning technique. The nanofibers were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray diffraction (XRD), and nitrogen adsorption–desorption measurement. Tetraethyl orthosilicate (TEOS) and polyvinyl alcohol (PVA) were used as a silica source and fiber forming source, respectively. TEM and SEM images showed synthesis of MCM-41 nanofibers with a diameter of 200 nm. The pore diameter and surface area of calcined MCM-41 nanofibers was 2.2 nm and 970 m2/g, respectively. The morphology of the MCM-41 nanofibers depended on spinning voltages.

Keywords: Electrospinning, electron microscopy, fiber technology, porous materials, X-ray techniques.

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175 Tool Wear of Metal Matrix Composite 10wt% AlN Reinforcement Using TiB2 Cutting Tool

Authors: M. S. Said, J. A. Ghani, Che Hassan C. H., N. N. Wan, M. A. Selamat, R. Othman

Abstract:

Metal matrix composites (MMCs) attract considerable attention as a result from its ability in providing a high strength, high modulus, high toughness, high impact properties, improving wear resistance and providing good corrosion resistance compared to unreinforced alloy. Aluminium Silicon (Al/Si) alloy MMC has been widely used in various industrial sectors such as in transportation, domestic equipment, aerospace, military, construction, etc. Aluminium silicon alloy is an MMC that had been reinforced with aluminium nitrate (AlN) particle and become a new generation material use in automotive and aerospace sector. The AlN is one of the advance material that have a bright prospect in future since it has features such as lightweight, high strength, high hardness and stiffness quality. However, the high degree of ceramic particle reinforcement and the irregular nature of the particles along the matrix material that contribute to its low density is the main problem which leads to difficulties in machining process. This paper examined the tool wear when milling AlSi/AlN Metal Matrix Composite using a TiB2 (Titanium diboride) coated carbide cutting tool. The volume of the AlN reinforced particle was 10% and milling process was carried out under dry cutting condition. The TiB2 coated carbide insert parameters used were at the cutting speed of (230, 300 and 370m/min, feed rate of 0.8, Depth of Cut (DoC) at 0.4m). The Sometech SV-35 video microscope system used to quantify of the tool wear. The result shown that tool life span increasing with the cutting speeds at (370m/min, feed rate of 0.8mm/tooth and DoC at 0.4mm) which constituted an optimum condition for longer tool life lasted until 123.2 mins. Meanwhile, at medium cutting speed which at 300m/m, feed rate of 0.8mm/tooth and depth of cut at 0.4mm we found that tool life span lasted until 119.86 mins while at low cutting speed it lasted in 119.66 mins. High cutting speed will give the best parameter in cutting AlSi/AlN MMCs material. The result will help manufacturers in machining process of AlSi/AlN MMCs materials.

Keywords: AlSi/AlN Metal Matrix Composite milling process, tool wear, TiB2 coated cemented carbide tool.

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174 HPM Solution of Momentum Equation for Darcy-Brinkman Model in a Parallel Plates Channel Subjected to Lorentz Force

Authors: Asghar Shirazpour, Seyed Moein Rassoulinejad Mousavi, Hamid Reza Seyf

Abstract:

In this paper an analytical solution is presented for fully developed flow in a parallel plates channel under the action of Lorentz force, by use of Homotopy Perturbation Method (HPM). The analytical results are compared with exact solution and an excellent agreement has been observed between them for both Couette and Poiseuille flows. Moreover, the effects of key parameters have been studied on the dimensionless velocity profile.

Keywords: Lorentz Force, Porous Media, Homotopy Perturbation method

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173 SCR-Based Advanced ESD Protection Device for Low Voltage Application

Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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172 2-D Realization of WiMAX Channel Interleaver for Efficient Hardware Implementation

Authors: Rizwan Asghar, Dake Liu

Abstract:

The direct implementation of interleaver functions in WiMAX is not hardware efficient due to presence of complex functions. Also the conventional method i.e. using memories for storing the permutation tables is silicon consuming. This work presents a 2-D transformation for WiMAX channel interleaver functions which reduces the overall hardware complexity to compute the interleaver addresses on the fly. A fully reconfigurable architecture for address generation in WiMAX channel interleaver is presented, which consume 1.1 k-gates in total. It can be configured for any block size and any modulation scheme in WiMAX. The presented architecture can run at a frequency of 200 MHz, thus fully supporting high bandwidth requirements for WiMAX.

Keywords: Interleaver, deinterleaver, WiMAX, 802.16e.

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171 Research of Concentratibility of Low Quality Bauxite Raw Materials

Authors: Nadezhda Nikolaeva, Tatyana Alexandrova, Alexandr Alexandrov

Abstract:

Processing of high-silicon bauxite on the base of the traditional clinkering method is related to high power consumption and capital investments, which makes production of alumina from those ores non-competitive in terms of basic economic showings. For these reasons, development of technological solutions enabling to process bauxites with various chemical and mineralogical structures efficiently with low level of thermal power consumption is important. Flow sheet of the studies on washability of ores from the Timanskoe and the Severo-Onezhskoe deposits is on the base of the flotation method.

Keywords: Low-quality bauxite, resource-saving technology, optimization, aluminum, conditioning of composition, separation characteristics.

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170 Seawater Desalination for Production of Highly Pure Water Using a Hydrophobic PTFE Membrane and Direct Contact Membrane Distillation (DCMD)

Authors: Ahmad Kayvani Fard, Yehia Manawi

Abstract:

Qatar’s primary source of fresh water is through seawater desalination. Amongst the major processes that are commercially available on the market, the most common large scale techniques are Multi-Stage Flash distillation (MSF), Multi Effect distillation (MED), and Reverse Osmosis (RO). Although commonly used, these three processes are highly expensive down to high energy input requirements and high operating costs allied with maintenance and stress induced on the systems in harsh alkaline media. Beside that cost, environmental footprint of these desalination techniques are significant; from damaging marine eco-system, to huge land use, to discharge of tons of GHG and huge carbon footprint. Other less energy consuming techniques based on membrane separation are being sought to reduce both the carbon footprint and operating costs is membrane distillation (MD). Emerged in 1960s, MD is an alternative technology for water desalination attracting more attention since 1980s. MD process involves the evaporation of a hot feed, typically below boiling point of brine at standard conditions, by creating a water vapor pressure difference across the porous, hydrophobic membrane. Main advantages of MD compared to other commercially available technologies (MSF and MED) and specially RO are reduction of membrane and module stress due to absence of trans-membrane pressure, less impact of contaminant fouling on distillate due to transfer of only water vapor, utilization of low grade or waste heat from oil and gas industries to heat up the feed up to required temperature difference across the membrane, superior water quality, and relatively lower capital and operating cost. To achieve the objective of this study, state of the art flat-sheet cross-flow DCMD bench scale unit was designed, commissioned, and tested. The objective of this study is to analyze the characteristics and morphology of the membrane suitable for DCMD through SEM imaging and contact angle measurement and to study the water quality of distillate produced by DCMD bench scale unit. Comparison with available literature data is undertaken where appropriate and laboratory data is used to compare a DCMD distillate quality with that of other desalination techniques and standards. Membrane SEM analysis showed that the PTFE membrane used for the study has contact angle of 127º with highly porous surface supported with less porous and bigger pore size PP membrane. Study on the effect of feed solution (salinity) and temperature on water quality of distillate produced from ICP and IC analysis showed that with any salinity and different feed temperature (up to 70ºC) the electric conductivity of distillate is less than 5 μS/cm with 99.99% salt rejection and proved to be feasible and effective process capable of consistently producing high quality distillate from very high feed salinity solution (i.e. 100000 mg/L TDS) even with substantial quality difference compared to other desalination methods such as RO and MSF.

Keywords: Membrane Distillation, Waste Heat, Seawater Desalination, Membrane, Freshwater, Direct Contact Membrane Distillation

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169 Thermoelastic Damping of Inextensional Hemispherical Shell

Authors: S. Y. Choi, Y. H. Na, J. H. Kim

Abstract:

In this work, thermoelastic damping effect on the hemi- spherical shells is investigated. The material is selected silicon, and heat conduction equation for thermal flow is solved to obtain the temperature profile in which bending approximation with inextensional assumption of the model. Using the temperature profile, eigen-value analysis is performed to get the natural frequencies of hemispherical shells. Effects of mode numbers, radii and radial thicknesses of the model on the natural frequencies are analyzed in detail. Furthermore, the quality factor (Q-factor) is defined, and discussed for the ring and hemispherical shell.

Keywords: Thermoelastic damping, hemispherical shell, quality factor

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168 Equilibrium Modeling of Carbon Dioxide Adsorption on Zeolites

Authors: Alireza Behvandi, Somayeh Tourani

Abstract:

High pressure adsorption of carbon dioxide on zeolite 13X was investigated in the pressure range (0 to 4) Mpa and temperatures 298, 308 and 323K. The data fitting is accomplished with the Toth, UNILAN, Dubinin-Astakhov and virial adsorption models which are generally used for micro porous adsorbents such as zeolites. Comparison with experimental data from the literature indicated that the virial model would best determine results. These results may be partly attributed to the flexibility of the virial model which can accommodate as many constants as the data warrants.

Keywords: adsorption models, zeolite, carbon dioxide

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167 Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process

Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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166 Contaminant Transport Modeling Due to Thermal Diffusion Effects with the Effect of Biodegradation

Authors: Nirmala P. Ratchagar, S. Senthamilselvi

Abstract:

The heat and mass transfer characteristics of contaminants in groundwater subjected to a biodegradation reaction is analyzed by taking into account the thermal diffusion (Soret) effects. This phenomenon is modulated mathematically by a system of partial differential equations which govern the motion of fluid (groundwater) and solid (contaminants) particles. The numerical results are presented graphically for different values of the parameters entering into the problem on the velocity profiles of fluid, contaminants, temperature and concentration profile.

Keywords: Heat and mass transfer, Soret number, porous media.

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165 Design of a Grid for Preparation of high Density Granules from Dispersed Materials

Authors: Bogdan Il. Bogdanov, Dimitar R.Rusev, Yancho H. Hristov, Irena G. Markovska, Dimitar P.Georgiev

Abstract:

New design of a grid for preparation of high density granules with enhanced mechanical strength by granulation of dispersed materials is suggested. A method for hydrodynamic dimensioning of the grid depending on granulation conditions, hydrodynamic regime of the operation, dispersity and physicochemical characteristics of the materials to be granulated was suggested. The aim of the grid design is to solve the problems arising by the granulation of disperse materials.

Keywords: fluidized bed reactor, granulation, porous silicatematerials.

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164 Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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163 Performance of Nine Different Types of PV Modules in the Tropical Region

Authors: Jiang Fan

Abstract:

With growth of PV market in tropical region, it is necessary to investigate the performance of different types of PV technology under the tropical weather conditions. Singapore Polytechnic was funded by Economic Development Board (EDB) to set up a solar PV test-bed for the research on performance of different types of PV modules in the country. The PV test-bed installed the nine different types of PV systems that are integrated to power utility grid for monitoring and analyzing their operating performances. This paper presents the 12 months operational data of nine different PV systems and analyses on performances of installed PV systems using energy yield and performance ratio. The nine types of PV systems under test have shown their energy yields ranging from 2.67 to 3.36 kWh/kWp and their performance ratios (PRs) ranging from 70% to 88%.

Keywords: Monocrystalline, Multicrystalline, Amorphous Silicon, Cadmium Telluride and thin film PV.

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162 FEM Analysis of Occluded Ear Simulator with Narrow Slit Pathway

Authors: M. Sasajima, T. Yamaguchi, M. Watanabe, Y. Koike

Abstract:

This paper discusses the propagation of sound waves in air, specifically in narrow rectangular pathways of an occluded-ear simulator for acoustic measurements. In narrow pathways, both the speed of sound and the phase of the sound waves are affected by the damping of the air viscosity. Herein, we propose a new finite-element method (FEM) that considers the effects of the air viscosity. The method was developed as an extension of existing FEMs for porous, sound-absorbing materials. The results of a numerical calculation for a three-dimensional ear-simulator model using the proposed FEM were validated by comparing with theoretical lumped-parameter modeling analysis and standard values.

Keywords: Ear simulator, FEM, simulation, viscosity.

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161 Highly Sensitive Label Free Biosensor for Tumor Necrosis Factor

Authors: Tze Sian Pui, Tushar Bansal, Patthara Kongsuphol, Sunil K. Arya

Abstract:

We present a label-free biosensor based on electrochemical impedance spectroscopy for the detection of proinflammatory cytokine Tumor Necrosis Factor (TNF-α). Secretion of TNF-α has been correlated to the onset of various diseases including rheumatoid arthritis, Crohn-s disease etc. Gold electrodes were patterned on a silicon substrate and self assembled monolayer of dithiobis-succinimidyl propionate was used to develop the biosensor which achieved a detection limit of ~57fM. A linear relationship was also observed between increasing TNF-α concentrations and chargetransfer resistance within a dynamic range of 1pg/ml – 1ng/ml.

Keywords: Tumor necrosis factor, electrochemical impedance spectroscopy, label free, self assembled monolayer

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160 Design of SiC Capacitive Pressure Sensor with LC-Based Oscillator Readout Circuit

Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

Abstract:

This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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159 Comparative Analysis of Transient-Fault Tolerant Schemes for Network on Chips

Authors: Muhammad Ali, Awais Adnan

Abstract:

Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.

Keywords: NoC, fault-tolerance, transient faults.

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158 The removal of Ni, Cu and Fe from a Mixed Metal System using Sodium Hypophosphite as a Reducing Agent

Authors: Promise Sethembiso Ngema, Freeman Ntuli, Mohamed Belaid

Abstract:

The main objective of this study was to remove and recover Ni, Cu and Fe from a mixed metal system using sodium hypophosphite as a reducing agent and nickel powder as seeding material. The metal systems studied consisted of Ni-Cu, Ni-Fe and Ni-Cu-Fe solutions. A 5 L batch reactor was used to conduct experiments where 100 mg/l of each respective metal was used. It was found that the metals were reduced to their elemental form with removal efficiencies of over 80%. The removal efficiency decreased in the order Fe>Ni>Cu. The metal powder obtained contained between 97-99% Ni and was almost spherical and porous. Size enlargement by aggregation was the dominant particulate process.

Keywords: crystallization, electroless plating, heavy metal removal, wastewater treatment

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157 A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices

Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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156 Derivation of Darcy’s Law using Homogenization Method

Authors: Kannanut Chamsri

Abstract:

Darcy’s Law is a well-known constitutive equation describing the flow of a fluid through a porous medium. The equation shows a relationship between the superficial or Darcy velocity and the pressure gradient which was first experimentally observed by Henry Darcy in 1855-1856. In this study, we apply homogenization method to Stokes equation in order to derive Darcy’s Law. The process of deriving the equation is complicated, especially in multidimensional domain. Thus, for the sake of simplicity, we use the indicial notation as well as the homogenization. This combination provides a smooth, simple and easy technique to derive Darcy’s Law.

Keywords: Darcy’s Law, Homogenization method, Indicial notation

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