Search results for: gate-leakage current
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2473

Search results for: gate-leakage current

2383 Triple Intercell Bar for Electrometallurgical Processes: A Design to Increase PV Energy Utilization

Authors: Eduardo P. Wiechmann, Jorge A. Henríquez, Pablo E. Aqueveque, Luis G. Muñoz

Abstract:

PV energy prices are declining rapidly. To take advantage of the benefits of those prices and lower the carbon footprint, operational practices must be modified. Undoubtedly, it challenges the electrowinning practice to operate at constant current throughout the day. This work presents a technology that contributes in providing modulation capacity to the electrode current distribution system. This is to raise the day time dc current and lower it at night. The system is a triple intercell bar that operates in current-source mode. The design is a capping board free dogbone type of bar that ensures an operation free of short circuits, hot swapability repairs and improved current balance. This current-source system eliminates the resetting currents circulating in equipotential bars. Twin auxiliary connectors are added to the main connectors providing secure current paths to bypass faulty or impaired contacts. All system conductive elements are positioned over a baseboard offering a large heat sink area to the ventilation of a facility. The system works with lower temperature than a conventional busbar. Of these attributes, the cathode current balance property stands out and is paramount for day/night modulation and the use of photovoltaic energy. A design based on a 3D finite element method model predicting electric and thermal performance under various industrial scenarios is presented. Preliminary results obtained in an electrowinning facility with industrial prototypes are included.

Keywords: Electrowinning, intercell bars, PV energy, current modulation.

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2382 A ZVT-ZCT-PWM DC-DC Boost Converter with Direct Power Transfer

Authors: Naim Suleyman Ting, Yakup Sahin, Ismail Aksoy

Abstract:

This paper presents a zero voltage transition-zero current transition (ZVT-ZCT)-PWM DC-DC boost converter with direct power transfer. In this converter, the main switch turns on with ZVT and turns off with ZCT. The auxiliary switch turns on and off with zero current switching (ZCS). The main diode turns on with ZVS and turns off with ZCS. Besides, the additional current or voltage stress does not occur on the main device. The converter has features as simple structure, fast dynamic response and easy control. Also, the proposed converter has direct power transfer feature as well as excellent soft switching techniques. In this study, the operating principle of the converter is presented and its operation is verified for 1 kW and 100 kHz model.

Keywords: Direct power transfer, boost converter, zero-voltage transition, zero-current transition.

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2381 Transient Three Dimensional FE Modeling for Thermal Analysis of Pulsed Current Gas Tungsten Arc Welding of Aluminum Alloy

Authors: N. Karunakaran, V. Balasubramanian

Abstract:

This paper presents the results of a study aimed at establishing the temperature distribution during the welding of aluminum alloy plates by Pulsed Current Gas Tungsten Arc Welding (PCGTAW) and Constant Current Gas Tungsten Arc Welding (CCGTAW) processes. Pulsing of the GTA welding current influences the dimensions and solidification rate of the fused zone, it also reduces the weld pool volume hence a narrower bead. In this investigation, the base material considered was aluminum alloy AA 6351 T6, which is finding use in aircraft, automobile and high-speed train components. A finite element analysis was carried out using ANSYS, and the results of the FEA were compared with the experimental results. It is evident from the study that the finite element analysis using ANSYS can be effectively used to model PCGTAW process for finding temperature distribution.

Keywords: Gas tungsten arc welding, pulsed current, finite element analysis, thermal analysis, aluminum alloy.

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2380 Analysis of Direct Current Motor in LabVIEW

Authors: E. Ramprasath, P. Manojkumar, P. Veena

Abstract:

DC motors have been widely used in the past centuries which are proudly known as the workhorse of industrial systems until the invention of the AC induction motors which makes a huge revolution in industries. Since then, the use of DC machines has been decreased due to enormous factors such as reliability, robustness and complexity but it lost its fame due to the losses. In this paper a new methodology is proposed to construct a DC motor through the simulation in LabVIEW to get an idea about its real time performances, if a change in parameter might have bigger improvement in losses and reliability.

Keywords: Direct Current motor, LabVIEW software, modelling and analysis, overall characteristics of Direct Current motor.

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2379 High Level Characterization and Optimization of Switched-Current Sigma-Delta Modulators with VHDL-AMS

Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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2378 A Double PWM Source Inverter Technique with Reduced Leakage Current for Application on Standalone Systems

Authors: Md. Noman Habib Khan, S. Khan, T. S. Gunawan, R. I. Boby

Abstract:

The photovoltaic (PV) panel with no galvanic isolation system is well known technique in the world which is effective and delivers power with enhanced efficiency. The PV generation presented here is for stand-alone system installed in remote areas when as the resulting power gets connected to electronic load installation instead of being tied to the grid. Though very small, even then transformer-less topology is shown to be with leakage in pico-ampere range. By using PWM technique PWM, leakage current in different situations is shown. The results shown in this paper show how the pico-ampere current is reduced to femto-ampere through use of inductors and capacitors of suitable values of inductor and capacitors with the load.

Keywords: Photovoltaic (PV) panel, Duty cycle, Pulse Duration Modulation (PDM), Leakage current.

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2377 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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2376 Resistor-less Current-mode Universal Biquad Filter Using CCTAs and Grounded Capacitors

Authors: T. Thosdeekoraphat, S. Summart, C. Saetiaw, S. Santalunai, C. Thongsopa

Abstract:

This article presents a current-mode universal biquadratic filter. The proposed circuit can apparently provide standard functions of the biquad filter: low-pass, high-pass, bandpass, band-reject and all-pass functions. The circuit uses 4 current controlled transconductance amplifiers (CCTAs) and 2 grounded capacitors. In addition, the pole frequency and quality factor can be adjusted by electronic method by adjusting the bias currents of the CCTA. The proposed circuit uses only grounded capacitors without additional external resistors, the proposed circuit is considerably appropriate to further developing into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.

Keywords: Resistor-less, Current-mode, Biquad filter, CCTA.

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2375 Investigation of Electromagnetic Force in 3P5W Busbar System under Peak Short-Circuit Current

Authors: Farhana Mohamad Yusop, Syafrudin Masri, Dahaman Ishak, Mohamad Kamarol

Abstract:

Electromagnetic forces on three-phase five-wire (3P5W) busbar system is investigated under three-phase short-circuits current. The conductor busbar placed in compact galvanized steel enclosure is in the rectangular shape. Transient analysis from Opera-2D is carried out to develop the model of three-phase short-circuits current in the system. The result of the simulation is compared with the calculation result, which is obtained by applying the theories of Biot Savart’s law and Laplace equation. Under this analytical approach, the moment of peak short-circuit current is taken into account. The effect upon geometrical arrangement of the conductor and the present of the steel enclosure are considered by the theory of image. The result depict that the electromagnetic force due to the transient short-circuit from simulation is agreed with the calculation.

Keywords: Busbar, electromagnetic force, short-circuit current, transient analysis.

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2374 Multipurpose Three Dimensional Finite Element Procedure for Thermal Analysis in Pulsed Current Gas Tungsten Arc Welding of AZ 31B Magnesium Alloy Sheets

Authors: N.Karunakaran, V.Balasubramanian

Abstract:

This paper presents the results of a study aimed at establishing the temperature distribution during the welding of magnesium alloy sheets by Pulsed Current Gas Tungsten Arc Welding (PCGTAW) and Constant Current Gas Tungsten Arc Welding (CCGTAW) processes. Pulsing of the GTAW welding current influences the dimensions and solidification rate of the fused zone, it also reduces the weld pool volume hence a narrower bead. In this investigation, the base material considered was 2mm thin AZ 31 B magnesium alloy, which is finding use in aircraft, automobile and high-speed train components. A finite element analysis was carried out using ANSYS, and the results of the FEA were compared with the experimental results. It is evident from this study that the finite element analysis using ANSYS can be effectively used to model PCGTAW process for finding temperature distribution.

Keywords: gas tungsten arc welding, pulsed current, finiteelement analysis, thermal analysis, magnesium alloy.

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2373 Current Mode Logic Circuits for 10-bit 5GHz High Speed Digital to Analog Converter

Authors: Zhenguo Vincent Chia, Sheung Yan Simon Ng, Minkyu Je

Abstract:

This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.

Keywords: Conventional, Current Mode Logic, DAC, Decoder

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2372 Semantic Web as an Enabling Technology for Better e-Services Addoption

Authors: Luka Pavlič, Marjan Heričko

Abstract:

E-services have significantly changed the way of doing business in recent years. We can, however, observe poor use of these services. There is a large gap between supply and actual eservices usage. This is why we started a project to provide an environment that will encourage the use of e-services. We believe that only providing e-service does not automatically mean consumers would use them. This paper shows the origins of our project and its current position. We discuss the decision of using semantic web technologies and their potential to improve e-services usage. We also present current knowledge base and its real-world classification. In the paper, we discuss further work to be done in the project. Current state of the project is promising.

Keywords: E-Services, E-Services Repository, Ontologies, Semantic Web

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2371 Shaping the Input Side Current Waveform of a 3-ϕ Rectifier into a Pure Sine Wave

Authors: Sikder Mohammad Faruk, Mir Mofajjal Hossain, Muhibul Haque Bhuyan

Abstract:

In this investigative research paper, we have presented the simulation results of a three-phase rectifier circuit to improve the input side current using the passive filters, such as capacitors and inductors at the output and input terminals of the rectifier circuit respectively. All simulation works were performed in a personal computer using the PSPICE simulator software, which is a virtual circuit design and simulation software package. The output voltages and currents were measured across a resistive load of 1 k. We observed that the output voltage levels, input current wave shapes, harmonic contents through the harmonic spectrum, and total harmonic distortion improved due to the use of such filters.

Keywords: input current wave, three-phase rectifier, passive filter, PSPICE Simulation

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2370 A Novel Nano-Scaled SRAM Cell

Authors: Arash Azizi Mazreah, Mohammad Reza Sahebi, Mohammad T. Manzuri Shalmani

Abstract:

To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.

Keywords: SRAM Cell, leakage current, cell area.

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2369 Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies

Authors: Mohini Polimetla, Rajat Mahapatra

Abstract:

There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.

Keywords: Carbon Nanotube Field Effect Transistor, Chirality Vector, Current Mirror

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2368 Low Leakage MUX/XOR Functions Using Symmetric and Asymmetric FinFETs

Authors: Farid Moshgelani, Dhamin Al-Khalili, Côme Rozon

Abstract:

In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model.

Keywords: FinFET, logic functions, asymmetric workfunction devices, back gate biasing, sub-threshold leakage current.

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2367 Triple-input Single-output Voltage-mode Multifunction Filter Using Only Two Current Conveyors

Authors: Mehmet Sagbas, Kemal Fidanboylu, M. Can Bayram

Abstract:

A new voltage-mode triple-input single-output multifunction filter using only two current conveyors is presented. The proposed filter which possesses three inputs and single-output can generate all biquadratic filtering functions at the output terminal by selecting different input signal combinations. The validity of the proposed filter is verified through PSPICE simulations.

Keywords: Active Filters, Voltage mode, Current conveyor

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2366 Design of Distribution Network for Gas Cylinders in Jordan

Authors: Hazem J. Smadi

Abstract:

Performance of a supply chain is directly related to a distribution network that entails the location of storing materials or products and how products are delivered to the end customer through different stages in the supply chain. This study analyses the current distribution network used for delivering gas cylinders to end customer in Jordan. Evaluation of current distribution has been conducted across customer service components. A modification on the current distribution network in terms of central warehousing in each city in the country improves the response time and customer experience. 

Keywords: Distribution network, gas cylinder, Jordan, supply chain.

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2365 Design and Analysis of a Piezoelectric-Based AC Current Measuring Sensor

Authors: Easa Ali Abbasi, Akbar Allahverdizadeh, Reza Jahangiri, Behnam Dadashzadeh

Abstract:

Electrical current measurement is a suitable method for the performance determination of electrical devices. There are two contact and noncontact methods in this measuring process. Contact method has some disadvantages like having direct connection with wire which may endamage the system. Thus, in this paper, a bimorph piezoelectric cantilever beam which has a permanent magnet on its free end is used to measure electrical current in a noncontact way. In mathematical modeling, based on Galerkin method, the governing equation of the cantilever beam is solved, and the equation presenting the relation between applied force and beam’s output voltage is presented. Magnetic force resulting from current carrying wire is considered as the external excitation force of the system. The results are compared with other references in order to demonstrate the accuracy of the mathematical model. Finally, the effects of geometric parameters on the output voltage and natural frequency are presented.

Keywords: Cantilever beam, electrical current measurement, forced excitation, piezoelectric.

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2364 A Superior Delay Estimation Model for VLSI Interconnect in Current Mode Signaling

Authors: Sunil Jadav, Rajeevan Chandel Munish Vashishath

Abstract:

Today’s VLSI networks demands for high speed. And in this work the compact form mathematical model for current mode signalling in VLSI interconnects is presented.RLC interconnect line is modelled using characteristic impedance of transmission line and inductive effect. The on-chip inductance effect is dominant at lower technology node is emulated into an equivalent resistance. First order transfer function is designed using finite difference equation, Laplace transform and by applying the boundary conditions at the source and load termination. It has been observed that the dominant pole determines system response and delay in the proposed model. The novel proposed current mode model shows superior performance as compared to voltage mode signalling. Analysis shows that current mode signalling in VLSI interconnects provides 2.8 times better delay performance than voltage mode. Secondly the damping factor of a lumped RLC circuit is shown to be a useful figure of merit.

Keywords: Current Mode, Voltage Mode, VLSI Interconnect.

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2363 An Experimental Investigation of Thermoelectric Air-Cooling Module

Authors: Yu-Wei Chang, Chiao-Hung Cheng, Wen-Fang Wu, Sih-Li Chen

Abstract:

This article experimentally investigates the thermal performance of thermoelectric air-cooling module which comprises a thermoelectric cooler (TEC) and an air-cooling heat sink. The influences of input current and heat load are determined. And performances under each situation are quantified by thermal resistance analysis. Since TEC generates Joule heat, this nature makes construction of thermal resistance network difficult. To simplify the analysis, this article emphasizes on the resistance heat load might meet when passing through the device. Therefore, the thermal resistances in this paper are to divide temperature differences by heat load. According to the result, there exists an optimum input current under every heating power. In this case, the optimum input current is around 6A or 7A. The performance of the heat sink would be improved with TEC under certain heating power and input current, especially at a low heat load. According to the result, the device can even make the heat source cooler than the ambient. However, TEC is not always effective at every heat load and input current. In some situation, the device works worse than the heat sink without TEC. To determine the availability of TEC, this study figures out the effective operating region in which the TEC air-cooling module works better than the heat sink without TEC. The result shows that TEC is more effective at a lower heat load. If heat load is too high, heat sink with TEC will perform worse than without TEC. The limit of this device is 57W. Besides, TEC is not helpful if input current is too high or too low. There is an effective range of input current, and the range becomes narrower when the heat load grows.

Keywords: Thermoelectric cooler, TEC, electronic cooling, heat sink.

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2362 Behavior of Current in a Semiconductor Nanostructure under Influence of Embedded Quantum Dots

Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

Abstract:

Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: Quantum semiconductors, nanostructures, quantum dots, spin polarization.

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2361 Characterization of Pure Nickel Coatings Fabricated under Pulse Current Conditions

Authors: M. Sajjadnejad, H. Omidvar, M. Javanbakht, A. Mozafari

Abstract:

Pure nickel coatings have been successfully electrodeposited on copper substrates by the pulse plating technique. The influence of current density, duty cycle and pulse frequency on the surface morphology, crystal orientation, and microhardness was determined. It was found that the crystallite size of the deposit increases with increasing current density and duty cycle. The crystal orientation progressively changed from a random texture at 1 A/dm2 to (200) texture at 10 A/dm2. Increasing pulse frequency resulted in increased texture coefficient and peak intensity of (111) reflection. An increase in duty cycle resulted in considerable increase in texture coefficient and peak intensity of (311) reflection. Coatings obtained at high current densities and duty cycle present a mixed morphology of small and large grains. Maximum microhardness of 193 Hv was achieved at 4 A/dm2, 10 Hz and duty cycle of 50%. Nickel coatings with (200) texture are ductile while (111) texture improves the microhardness of the coatings.

Keywords: Current density, Duty cycle, Microstructure, Nickel, Pulse frequency.

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2360 A Comparative Study on Optimized Bias Current Density Performance of Cubic ZnB-GaN with Hexagonal 4H-SiC Based Impatts

Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p+pnn+ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×108 A/m2. The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×108 A/m2.

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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2359 A Novel Optimal Setting for Directional over Current Relay Coordination using Particle Swarm Optimization

Authors: D. Vijayakumar, R. K. Nema

Abstract:

Over Current Relays (OCRs) and Directional Over Current Relays (DOCRs) are widely used for the radial protection and ring sub transmission protection systems and for distribution systems. All previous work formulates the DOCR coordination problem either as a Non-Linear Programming (NLP) for TDS and Ip or as a Linear Programming (LP) for TDS using recently a social behavior (Particle Swarm Optimization techniques) introduced to the work. In this paper, a Modified Particle Swarm Optimization (MPSO) technique is discussed for the optimal settings of DOCRs in power systems as a Non-Linear Programming problem for finding Ip values of the relays and for finding the TDS setting as a linear programming problem. The calculation of the Time Dial Setting (TDS) and the pickup current (Ip) setting of the relays is the core of the coordination study. PSO technique is considered as realistic and powerful solution schemes to obtain the global or quasi global optimum in optimization problem.

Keywords: Directional over current relays, Optimization techniques, Particle swarm optimization, Power system protection.

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2358 Analytical Subthreshold Drain Current Model Incorporating Inversion Layer Effective Mobility Model for Pocket Implanted Nano Scale n-MOSFET

Authors: Muhibul Haque Bhuyan, Quazi D. M. Khosru

Abstract:

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by using the conventional drift-diffusion equation. Effective electron mobility model includes three scattering mechanisms, such as, Coulomb, phonon and surface roughness scatterings as well as ballistic phenomena in the pocket implanted n-MOSFET. The model is simulated for various pocket profile and device parameters as well as for various bias conditions. Simulation results show that the subthreshold drain current data matches the experimental data already published in the literature.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Subthreshold Drain Current and Effective Mobility Model.

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2357 Adaptive Hysteresis Based SHAF Using PI and FLC Controller for Current Harmonics Mitigation

Authors: Ravit Gautam, Dipen A. Mistry, Manmohan Singh Meena, Bhupelly Dheeraj, Suresh Mikkili

Abstract:

Due to the increased use of the power electronic equipment, harmonics in the power system has increased to a greater extent. These harmonics results a poor power quality causing a major effect on the customers. Shunt active filters (SHAF) are used for the mitigations of the current harmonics and to maintain constant DC link voltage. PI and Fuzzy logic controllers (FLC) were used to control the performance of the shunt active filter under both balance and unbalance source voltage condition. The results found were not satisfying the IEEE-519 standards of THD to be less than 5%. Hysteresis band current control was used to obtain the gating signals for SHAF, though it has some drawbacks and thus to obtain a better performance of the SHAF to mitigate the harmonics, adaptive hysteresis band current control scheme is implemented. Adaptive hysteresis based SHAF is used to obtain better compensation of current harmonics and to regulate the DC link voltage in a better way.

Keywords: DC Link Voltage, Fuzzy Logic Controller, Adaptive Hysteresis, Harmonics, Shunt Active Filter.

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2356 Experimental Study on Ultrasonic Shot Peening Forming and Surface Properties of AALY12

Authors: Shi-hong Lu, Chao-xun Liu, Yi-feng Zhu

Abstract:

Ultrasonic shot peening (USP) on AALY12 sheet was studied. Several parameters (arc heights, surface roughness, surface topography and micro hardness) with different USP process parameters were measured. The research proposes that radius of curvature of shot peened sheet increases with time and electric current decreasing, while increases with pin diameter increasing, and radius of curvature reaches a saturation level after a specific processing time and electric current. An empirical model of the relationship between radius of curvature and pin diameter, electric current, time was also obtained. The research shows that the increment of surface and vertical micro hardness of material is more obvious with longer time and higher value of electric current, which can be up to 20% and 28% respectively.

Keywords: USP forming, surface properties, radius of curvature, residual stress.

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2355 Reduction of Leakage Power in Digital Logic Circuits Using Stacking Technique in 45 Nanometer Regime

Authors: P.K. Sharma, B. Bhargava, S. Akashe

Abstract:

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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2354 Bipolar PWM and LCL Filter Configuration to Reduce Leakage Currents in Transformerless PV System Connected to Utility Grid

Authors: Shanmuka Naga Raju

Abstract:

This paper  presents PV system without considering transformer connected to electric grid. This is considered more economic compared to present PV system. The problem that occurs when transformer is not considered appears with a leakage current near capacitor connected to ground. Bipolar Pulse Width Modulation (BPWM) technique along with filter L-C-L configuration in the circuit is modeled to shrink the leakage current in the circuit. The DC/AC inverter is modeled using H-bridge Insulated Gate Bipolar Transistor (IGBT) module which is controlled using proposed Bipolar PWM control technique. To extract maximum power, Maximum Power Point Technique (MPPT) controller is used in this model. Voltage and current regulators are used to determine the reference voltage for the inverter from active and reactive current where reactive current is set to zero. The PLL is modeled to synchronize the measurements. The model is designed with MATLAB Simulation blocks and compared with the methods available in literature survey to show its effectiveness.

Keywords: Photovoltaic, PV, pulse width modulation, PWM, perturb and observe, phase locked loop.

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