Search results for: Spintronic%20technology

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 654

Authors: K. Jabeur, L. D. Buda-Prejbeanu, G. Prenat, G. Di Pendina

Abstract:

MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. While a growing interest is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for a universal memory, its reliability is dramatically decreased because of the common writing/reading path. Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach revitalizes the hope of an ideal MRAM. It can overcome the reliability barrier encountered in current two-terminal MTJs by separating the reading and the writing path. In this paper, we study two possible writing schemes for the SOT-MTJ device based on recently fabricated samples. While the first is based on precessional switching, the second requires the presence of permanent magnetic field. Based on an accurate Verilog-A model, we simulate the two writing techniques and we highlight advantages and drawbacks of each one. Using the second technique, pioneering logic circuits based on the three-terminal architecture of the SOT-MTJ described in this work are under development with preliminary attractive results.

Keywords: Spin orbit Torque, Magnetic Tunnel Junction, MRAM, Spintronic, Circuit simulation.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3482

Authors: Abada Ahmed, Hiadsi Said, Ouahrani Tarik, Amrani Bouhalouane, Amara Kadda

Abstract:

Using the first-principles full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT), we have investigated the electronic structure and magnetism of full Heusler alloys Co2ZrGe and Co2NbB. These compounds are predicted to be half-metallic ferromagnets (HMFs) with a total magnetic moment of 2.000
B per formula unit, well consistent with the Slater-Pauling rule. Calculations show that both the alloys have an indirect band gaps, in the minority-spin channel of density of states (DOS), with values of 0.58 eV and 0.47 eV for Co2ZrGe and Co2NbB, respectively. Analysis of the DOS and magnetic moments indicates that their magnetism is mainly related to the d-d hybridization between the Co and Zr (or Nb) atoms. The half-metallicity is found to be relatively robust against volume changes. In addition, an atom inside molecule AIM formalism and an electron localization function ELF were also adopted to study the bonding properties of these compounds, building a bridge between their electronic and bonding behavior. As they have a good crystallographic compatibility with the lattice of semiconductors used industrially and negative calculated cohesive energies with considerable absolute values these two alloys could be promising magnetic materials in the spintronic field.

Keywords: Electronic properties, full Heusler alloys, halfmetallic ferromagnets, magnetic properties.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2454