Search results for: Silicon

Authors: S. Y. Choi, Y. H. Na, J. H. Kim

Abstract:

In this work, thermoelastic damping effect on the hemi- spherical shells is investigated. The material is selected silicon, and heat conduction equation for thermal flow is solved to obtain the temperature profile in which bending approximation with inextensional assumption of the model. Using the temperature profile, eigen-value analysis is performed to get the natural frequencies of hemispherical shells. Effects of mode numbers, radii and radial thicknesses of the model on the natural frequencies are analyzed in detail. Furthermore, the quality factor (Q-factor) is defined, and discussed for the ring and hemispherical shell.

Keywords: Thermoelastic damping, hemispherical shell, quality factor

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Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

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This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

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In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Jiang Fan

Abstract:

With growth of PV market in tropical region, it is necessary to investigate the performance of different types of PV technology under the tropical weather conditions. Singapore Polytechnic was funded by Economic Development Board (EDB) to set up a solar PV test-bed for the research on performance of different types of PV modules in the country. The PV test-bed installed the nine different types of PV systems that are integrated to power utility grid for monitoring and analyzing their operating performances. This paper presents the 12 months operational data of nine different PV systems and analyses on performances of installed PV systems using energy yield and performance ratio. The nine types of PV systems under test have shown their energy yields ranging from 2.67 to 3.36 kWh/kW_p and their performance ratios (PRs) ranging from 70% to 88%.

Keywords: Monocrystalline, Multicrystalline, Amorphous Silicon, Cadmium Telluride and thin film PV.

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Authors: Tze Sian Pui, Tushar Bansal, Patthara Kongsuphol, Sunil K. Arya

Abstract:

We present a label-free biosensor based on electrochemical impedance spectroscopy for the detection of proinflammatory cytokine Tumor Necrosis Factor (TNF-α). Secretion of TNF-α has been correlated to the onset of various diseases including rheumatoid arthritis, Crohn-s disease etc. Gold electrodes were patterned on a silicon substrate and self assembled monolayer of dithiobis-succinimidyl propionate was used to develop the biosensor which achieved a detection limit of ~57fM. A linear relationship was also observed between increasing TNF-α concentrations and chargetransfer resistance within a dynamic range of 1pg/ml – 1ng/ml.

Keywords: Tumor necrosis factor, electrochemical impedance spectroscopy, label free, self assembled monolayer

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Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

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This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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Authors: Muhammad Ali, Awais Adnan

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Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.

Keywords: NoC, fault-tolerance, transient faults.

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Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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Authors: N. Dahraoui, M. Boulakroune, D. Benatia

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In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectrometry (SIMS) analysis is considered. Indeed, we have developed a new Tikhonov- Miller deconvolution algorithm where a priori model of the solution is included. This is a denoisy and pre-deconvoluted signal obtained from: firstly, by the application of wavelet shrinkage algorithm, secondly by the introduction of the obtained denoisy signal in an iterative deconvolution algorithm. In particular, we have focused the light on the effect of the iterations number on the evolution of the deconvoluted signals. The SIMS profiles are multilayers of Boron in Silicon matrix.

Keywords: DRF, in-depth resolution, multiresolution deconvolution, SIMS, wavelet shrinkage.

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Authors: N. H. Arabi, Aicha Iratni, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

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TiO2 thin films have been prepared by the sol-gel dipcoating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral domains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: Dip coating, mono-Si, titanium oxide, thin film.

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Authors: Edison Muzenda, John Kabuba, Freeman Ntuli, Mansoor Mollagee

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The aim of this study was to investigate ammonium exchange capacity of natural and activated clinoptilolite from Kwazulu-Natal Province, South Africa. X – ray fluorescence (XRF) analysis showed that the clinoptilolite contained exchangeable ions of sodium, potassium, calcium and magnesium. This analysis also confirmed that the zeolite sample had a high silicon composition compared to aluminium. Batch equilibrium studies were performed in an orbital shaker and the data fitted the Langmuir isotherm very well. The ammonium exchange capacity was found to increase with pH and temperature. Clinoptilolite functionalization with hydrochloric acid increased its ammonia uptake ability.

Keywords: Activated clinoptilolite, Ammonium exchange, Equilibrium, Functionalization, Langmuir isotherm

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Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

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In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

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The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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Authors: Romuald Synak, Wlodzimierz Lipinski, Marcin Pawelczak

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An area-integrating method that uses the technique of total integrated light scatter for evaluating the root mean square height of the surface Sq has been presented in the paper. It is based on the measurement of the scatter power using a flat photodiode integrator rather than an optical sphere or a hemisphere. By this means, one can obtain much less expensive and smaller instruments than traditional ones. Thanks to this, they could find their application for surface control purposes, particularly in small and medium size enterprises. A description of the functioning of the measuring unit as well as the impact caused by different factors on its properties is presented first. Next, results of measurements of the Sq values performed for optical, silicon and metal samples have been shown. It has been also proven that they are in a good agreement with the results obtained using the Ulbricht sphere instrument.

Keywords: ISO 25178 Standard, scatterometry, surface metrology, surface roughness

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Authors: S. Falkenberg, L. Overmeyer

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The “conveyor belt" as a product represents a complex high performance component with a wide range of different applications. Further development of these highly complex components demands an integration of new technologies and new enhanced materials. In this context nanostructured fillers appear to have a more promising effect on the performance of the conveyor belt composite than conventional micro-scaled fillers. Within the project “DotTrans" nanostructured fillers, for example silicon dioxide, are used to optimize performance parameters of conveyor belt systems. The objective of the project includes operating parameters like energy consumption or friction characteristics as well as adaptive parameters like cut or wear resistance.

Keywords: Conveyor belt, nanostructured fillers, wear resistance, friction characteristics.

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Authors: J. Mohammadpour, G. E. Lau, S. Cheng, A. Lee

Abstract:

Numerical study was conducted using two synthetic jet actuators attached underneath a micro-channel. By fixing the oscillating frequency and diaphragm amplitude, the effects on the heat transfer within the micro-channel were investigated with two synthetic jets being in-phase and 180° out-of-phase at different orifice spacing. There was a significant benefit identified with two jets being 180° out-of-phase with each other at the orifice spacing of 2 mm. By having this configuration, there was a distinct pattern of vortex forming which disrupts the main channel flow as well as promoting thermal mixing at high velocity within the channel. Therefore, this configuration achieved higher cooling performance compared to the other cases studied in terms of the reduction in the maximum temperature and cooling uniformity in the silicon wafer.

Keywords: Synthetic jets, microchannel, electronic cooling, computational fluid dynamics.

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Authors: Jung-Ho Moon, Tae Kwon Ha

Abstract:

In the present study, the effect of Si, Al, Ti, Zr, and Nb addition on the microstructure and hot workability of cast M42 tool steels, basically consisting of 1.0C, 0.2Mn, 3.8Cr, 1.5W, 8.5Co, 9.2Mo, and 1.0V in weight percent has been investigated. Tool steels containing Si of 0.25 and 0.5wt.%, Al of 0.06 and 0.12wt.%, Ti of 0.3wt.%, Zr of 0.3wt.%, and Nb of 0.3wt.% were cast into ingots of 140mm ´ 140mm ´ 330mm by vacuum induction melting. After solution treatment at 1150^oC for 1.5hr followed by furnace cooling, hot rolling at 1180^oC was conducted on the ingots. Addition of titanium, zirconium and niobium was found to retard the decomposition of the eutectic carbides and result in the deterioration of hot workability of the tool steels, while addition of aluminum and silicon showed relatively well decomposed carbide structure and resulted in sound hot rolled plates.

Keywords: High speed steels, alloying elements, eutectic carbides, microstructure, hot workability.

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Authors: Zhenhuan Zhu, David Mulvaney, Vassilios Chouliaras

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This paper presents a novel genetic algorithm, termed the Optimum Individual Monogenetic Algorithm (OIMGA) and describes its hardware implementation. As the monogenetic strategy retains only the optimum individual, the memory requirement is dramatically reduced and no crossover circuitry is needed, thereby ensuring the requisite silicon area is kept to a minimum. Consequently, depending on application requirements, OIMGA allows the investigation of solutions that warrant either larger GA populations or individuals of greater length. The results given in this paper demonstrate that both the performance of OIMGA and its convergence time are superior to those of existing hardware GA implementations. Local convergence is achieved in OIMGA by retaining elite individuals, while population diversity is ensured by continually searching for the best individuals in fresh regions of the search space.

Keywords: Genetic algorithms, hardware-based machinelearning.

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Authors: Jozef Novak-Marcincin

Abstract:

Virtual Reality Modelling Language (VRML) is description language, which belongs to a field Window on World virtual reality system. The file, which is in VRML format, can be interpreted by VRML explorer in three-dimensional scene. VRML was created with aim to represent virtual reality on Internet easier. Development of 3D graphic is connected with Silicon Graphic Corporation. VRML 2.0 is the file format for describing interactive 3D scenes and objects. It can be used in collaboration with www, can be used for 3D complex representations creating of scenes, products or VR applications VRML 2.0 enables represent static and animated objects too. Interesting application of VRML is in area of manufacturing systems presentation.

Keywords: Virtual reality, virtual reality modelling language, design of workplaces, technological workplaces.

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Authors: Hla Hla Khaing, Yit Jian Liang, Nant Nyein Moe Htay, Jiang Fan

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Partial shadowing is one of the problems that are always faced in terrestrial applications of solar photovoltaic (PV). The effects of partial shadow on the energy yield of conventional mono-crystalline and multi-crystalline PV modules have been researched for a long time. With deployment of new thin-film solar PV modules in the market, it is important to understand the performance of new PV modules operating under the partial shadow in the tropical zone. This paper addresses the impacts of different partial shadowing on the operating characteristics of four different types of solar PV modules that include multi-crystalline, amorphous thin-film, CdTe thin-film and CIGS thin-film PV modules.

Keywords: Partial shade, CdTe, CIGS, multi-crystalline (mc-Si), amorphous silicon (a-Si), bypass diode.

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Authors: Zina Saheb, Ezz El-Masry

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As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: M. Amara, M. Tahar Abbes, A. Dokkiche, M. Benbrike

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Shear stresses generate frictional forces thus lead to the reduction of engine performance due to the power losses. This friction can also cause damage to the piston material. Thus, the choice of an optimal material for the piston is necessary to improve the elastohydrodynamical contacts of the piston. In this study, to achieve this objective, an elastohydrodynamical lubrication model that satisfies the best tribological behavior of the piston with the optimum choice of material is developed. Several aluminum alloys composed of different components are studied in this simulation. An application is made on the piston 60 x 120 mm Diesel engine type F8L413 currently mounted on Deutz trucks TB230 by using different aluminum alloys where alloys based on aluminum-silicon have better tribological performance.

Keywords: EHD lubricated contacts, friction, properties of materials, tribological performance.

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Authors: C. C. Su, S. H. Chang

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The carbon based coils with the nanometer scale have the 3 dimension helix geometry. We synthesized the carbon nano-coils by the use of chemical vapor deposition technique with iron and tin as the catalysts. The fabricated coils have the external diameter of ranging few hundred nm to few thousand nm. The Scanning Electro-Microscope (SEM) and Tunneling Electro-Microscope has shown detail images of the coil-s structure. The fabrication of the carbon nano-coils can be grown on the metal and non-metal substrates, such as the stainless steel and silicon substrates. Besides growth on the flat substrate; they also can be grown on the stainless steel wires. After the synthesis of the coils, the mechanical and electro-mechanical property is measured. The experimental results were reported.

Keywords: Carbon nanocoils, chemical vapor deposition, nano-materials

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Authors: Vitoldas Vaitkevičius, Evaldas Šerelis

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Silica fume, also known as microsilica (MS) or  condensed silica fume is a by-product of the production of silicon  metal or ferrosilicon alloys. Silica fume is one of the most effective  pozzolanic additives which could be used for ultrahigh performance  and other types of concrete. Despite the fact, however is not entirely  clear, which amount of silica fume is most optimal for UHPC. Main  objective of this experiment was to find optimal amount of silica  fume for UHPC with and without thermal treatment, when different  amount of quartz powder is substituted by silica fume. In this work  were investigated four different composition of UHPC with different  amount of silica fume. Silica fume were added 0, 10, 15 and 20% of  cement (by weight) to UHPC mixture. Optimal amount of silica fume  was determined by slump, viscosity, qualitative and quantitative  XRD analysis and compression strength tests methods.

Keywords: Compressive strength, silica fume, ultrahigh performance concrete, XRD.

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Authors: L. Novakova-Marcincinova, J. Novak-Marcincin

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Paper presents knowledge about types of test in area of materials properties of selected methods of rapid prototyping technologies. In today used rapid prototyping technologies for production of models and final parts are used materials in initial state as solid, liquid or powder material structure. In solid state are used various forms such as pellets, wire or laminates. Basic range materials include paper, nylon, wax, resins, metals and ceramics. In Fused Deposition Modeling (FDM) rapid prototyping technology are mainly used as basic materials ABS (Acrylonitrile Butadiene Styrene), polyamide, polycarbonate, polyethylene and polypropylene. For advanced FDM applications are used special materials as silicon nitrate, PZT (Piezoceramic Material - Lead Zirconate Titanate), aluminium oxide, hydroxypatite and stainless steel.

Keywords: Rapid prototyping, materials, testing of materials.

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Authors: Alonggot Limcharoen Kaeochotchuangkul, Pathomporn Sawatchai

Abstract:

This research aims to design and build a wet etching system, which is suitable for anisotropic wet etching, in order to reduce etching time, to reduce hillocks on the etched surface (to reduce roughness), and to create a 45-degree wall angle (micro-mirror). This study would start by designing a wet etching system. There are four main components in this system: an ultrasonic cleaning, a condenser, a motor and a substrate holder. After that, an ultrasonic machine was modified by applying a condenser to maintain the consistency of the solution concentration during the etching process and installing a motor for improving the roughness. This effect on the etch rate and the roughness showed that the etch rate increased and the roughness was reduced.

Keywords: Anisotropic wet etching, wet etching system, Hillocks, ultrasonic cleaning.

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Authors: Pejman Hosseiniun, Rose Shayeghi, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices. In this paper, a new SRAM cell design based on CNFET technology is proposed. The proposed SRAM cell design for CNFET is compared with SRAM cell designs implemented with the conventional CMOS and FinFET in terms of speed, power consumption, stability, and leakage current. The HSPICE simulation and analysis show that the dynamic power consumption of the proposed 8T CNFET SRAM cell’s is reduced about 48% and the SNM is widened up to 56% compared to the conventional CMOS SRAM structure at the expense of 2% leakage power and 3% write delay increase.

Keywords: SRAM cell, CNFET, low power, HSPICE.

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Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

Abstract:

This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V_th) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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Authors: Elham Farahmand, Fatimah Ibrahim, Samira Hosseini, Ivan Djordjevic, Leo. H. Koole

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Compositions of different molar ratios of polymethylmethacrylate-co-methacrylic acid (PMMA-co-MAA) were synthesized via free-radical polymerization. Polymer coated surfaces have been produced on silicon wafers. Coated samples were analyzed by atomic force microscopy (AFM). The results have shown that the roughness of the surfaces have increased by increasing the molar ratio of monomer methacrylic acid (MAA). This study reveals that the gradual increase in surface roughness is due to the fact that carboxylic functional groups have been generated by MAA segments. Such surfaces can be desirable platforms for fabrication of the biosensors for detection of the viruses and diseases.

Keywords: Polymethylmethacrylate-co-methacrylic acid (PMMA-co-MAA), Polymeric material, Atomic Force Microscopy, roughness, carboxylic functional groups.

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Authors: K. Sowri Babu, P. Srinath, N. Rajeswara Rao, K. Venugopal Reddy

Abstract:

The effect of gamma ray irradiation on morphology and optical properties of ZnO/Mesoporous silica (MPS) nanocomposite was studied. The ZnO/MPS nanocomposite was irradiated with gamma rays of doses 30, 60, and 90 kGy and dose-rate of irradiation was 0.15 kGy/hour. Irradiated samples are characterized with FE-SEM, FT-IR, UV-vis, and Photoluminescence (PL) spectrometers. SEM pictures showed that morphology changed from spherical to flake like morphology. UV-vis analysis showed that the band gap increased with increase of gamma ray irradiation dose. This enhancement of the band gap is assigned to the depletion of oxygen vacancies with irradiation. The intensity of PL peak decreased gradually with increase of gamma ray irradiation dose. The decrease in PL intensity is attributed to the decrease of oxygen vacancies at the interface due to poor interface and improper passivation between ZnO/MPS.

Keywords: ZnO nanoparticles, photoluminescence, porous silicon, nanocomposites.

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