Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 224

Search results for: Silicon

134 Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: holding voltage, ESD (Electro-Static Discharge), SCR (Silicon Controlled Rectifier)

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133 Integrated Flavor Sensor Using Microbead Array

Authors: Ziba Omidi, Min-Ki Kim

Abstract:

This research presents the design, fabrication and application of a flavor sensor for an integrated electronic tongue and electronic nose that can allow rapid characterization of multi-component mixtures in a solution. The odor gas and liquid are separated using hydrophobic porous membrane in micro fluidic channel. The sensor uses an array composed of microbeads in micromachined cavities localized on silicon wafer. Sensing occurs via colorimetric and fluorescence changes to receptors and indicator molecules that are attached to termination sites on the polymeric microbeads. As a result, the sensor array system enables simultaneous and near-real-time analyses using small samples and reagent volumes with the capacity to incorporate significant redundancies. One of the key parts of the system is a passive pump driven only by capillary force. The hydrophilic surface of the fluidic structure draws the sample into the sensor array without any moving mechanical parts. Since there is no moving mechanical component in the structure, the size of the fluidic structure can be compact and the fabrication becomes simple when compared to the device including active microfluidic components. These factors should make the proposed system inexpensive to mass-produce, portable and compatible with biomedical applications.

Keywords: Optical Sensor, Semiconductor Manufacturing, smell sensor, taste sensor

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132 Electrical Properties of Roystonea regia Fruit Extract as Dye Sensitized Solar Cells

Authors: Adenike Boyo, Olasunkanmi Kesinro, Henry Boyo, Surukite Oluwole

Abstract:

Utilizing solar energy in producing electricity can minimize environmental pollution generated by fossil fuel in producing electricity. Our research was base on the extraction of dye from Roystonea regia fruit by using methanol as solvent. The dye extracts were used as sensitizers in Dye-sensitized solar cell (DSSCs). Study was done on the electrical properties from the extracts of Roystonea regia fruit as Dye-sensitized solar cell (DSSCs). The absorptions of the extracts and extracts with dye were determined at different wavelengths (350-1000nm). Absorption peak was observed at 1.339 at wavelength 400nm. The obtained values for methanol extract Roystonea regia extract are, Imp = 0.015mA, Vmp = 12.0mV, fill factor = 0.763, Isc= 0.018 mA and Voc = 13.1 mV and efficiency of 0.32%. .The phytochemical screening was taken and it was observed that Roystonea regia extract contained less of anthocyanin compared to flavonoids. The nanostructured dye sensitized solar cell (DSSC) will provide economically credible alternative to present day silicon p–n junction photovoltaic.

Keywords: methanol, Ethanol, titanium dioxide, roystonea regia fruit, dye-sensitized solar cell

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131 Analysis of Sulphur-Oxidizing Bacteria Attack on Concrete Based On Waste Materials

Authors: A. Eštoková, M. Kovalčíková, A. Luptáková, A. Sičáková, M. Ondová

Abstract:

Concrete durability as an important engineering property of concrete, determining the service life of concrete structures very significantly, can be threatened and even lost due to the interactions of concrete with external environment. Bio-corrosion process caused by presence and activities of microorganisms producing sulphuric acid is a special type of sulphate deterioration of concrete materials. The effects of sulphur-oxidizing bacteria Acidithiobacillus thiooxidans on various concrete samples, based on silica fume and zeolite, were investigated in laboratory during 180 days. A laboratory study was conducted to compare the performance of concrete samples in terms of the concrete deterioration influenced by the leaching of calcium and silicon compounds from the cement matrix. The changes in the elemental concentrations of calcium and silicon in both solid samples and liquid leachates were measured by using X – ray fluorescence method. Experimental studies confirmed the silica fume based concrete samples were found out to have the best performance in terms of both silicon and calcium ions leaching.

Keywords: Concrete, Leaching, Bacteria, Bio-corrosion

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130 Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Authors: F. Salehuddin, K. E. Kaharudin, A. H. Hamidon

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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129 The Synergistic Effects of Using Silicon and Selenium on Fruiting of Zaghloul Date Palm (Phoenix dectylifera L.)

Authors: M. R. Gad El- Kareem, A. M. K. Abdel Aal, A. Y. Mohamed

Abstract:

During 2011 and 2012 seasons, Zaghloul date palms received four sprays of silicon (Si) at 0.05 to 0.1% and selenium (Se) at 0.01 to 0.02%. Growth, nutritional status, yield as well as physical and chemical characteristics of the fruits in response to application of silicon and selenium were investigated. Single and combined applications of silicon at 0.05 to 0.1% and selenium at 0.01 to 0.02% was very effective in enhancing the leaf area, total chlorophylls, percentages of N, P and K in the leaves, yield, bunch weight as well as physical and chemical characteristics of the fruits in relative to the check treatment. Silicon was superior to selenium in this respect. Combined application was favorable than using each alone in this connection. Treating Zaghloul date palms four times with a mixture of silicon at 0.05% + selenium at 0.01% resulted in an economical yield and producing better fruit quality.

Keywords: Silicon, Selenium, leaf area, date palms, Zaghloul

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128 Alloying Effect on Hot Workability of M42 High Speed Steel

Authors: Tae Kwon Ha, Jung-Ho Moon

Abstract:

In the present study, the effect of Si, Al, Ti, Zr, and Nb addition on the microstructure and hot workability of cast M42 tool steels, basically consisting of 1.0C, 0.2Mn, 3.8Cr, 1.5W, 8.5Co, 9.2Mo, and 1.0V in weight percent has been investigated. Tool steels containing Si of 0.25 and 0.5wt.%, Al of 0.06 and 0.12wt.%, Ti of 0.3wt.%, Zr of 0.3wt.%, and Nb of 0.3wt.% were cast into ingots of 140mm ´ 140mm ´ 330mm by vacuum induction melting. After solution treatment at 1150oC for 1.5hr followed by furnace cooling, hot rolling at 1180oC was conducted on the ingots. Addition of titanium, zirconium and niobium was found to retard the decomposition of the eutectic carbides and result in the deterioration of hot workability of the tool steels, while addition of aluminum and silicon showed relatively well decomposed carbide structure and resulted in sound hot rolled plates.

Keywords: Microstructure, high speed steels, alloying elements, eutectic carbides, hot workability

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127 Influence of Nano-ATH on Electrical Performance of LSR for HVDC Insulation

Authors: Ju-Na Hwang, Yong-Jun Park, Min-Hae Park, Kee-Joe Lim

Abstract:

Many studies have been conducted on DC transmission. Of power apparatus for DC transmission, high voltage direct current (HVDC) cable systems are being evaluated because of the increase in power demand and transmission distance. Therefore, dc insulation characteristics of liquid silicone rubber (LSR), which has various advantages such as short curing time and the ease of maintenance, were investigated to assess its performance as a HVDC insulation material for cable joints. The electrical performance of LSR added to nano-aluminum trihydrate (ATH) were confirmed by measurements of the breakdown strength and electrical conductivity. In addition, field emission scanning electron microscope (FE-SEM) was used as a means of confirmation of nanofiller dispersion state. The LSR nanocomposite was prepared by compounding LSR filled nano-sized ATH filler. The dc insulation properties of LSR added to nano-sized ATH fillers were found to be superior to those of the LSR without a filler. 

Keywords: nanocomposite, liquid silicone rubber, HVDC insulation, cable joints, Nano-ATH

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126 Light Emission Enhancement of Silicon Nanocrystals by Gold Layer

Authors: R. Karmouch

Abstract:

A thin gold metal layer was deposited on the top of silicon oxide films containing embedded Si nanocrystals (Si-nc). The sample was annealed in a gas containing nitrogen, and subsequently characterized by photoluminescence. We obtained 3-fold enhancement of photon emission from the Si-nc embedded in silicon dioxide covered with a Gold layer as compared with an uncovered sample. We attribute this enhancement to the increase of the spontaneous emission rate caused by the coupling of the Si-nc emitters with the surface plasmons (SP). The evolution of PL emission with laser irradiated time was also collected from covered samples, and compared to that from uncovered samples. In an uncovered sample, the PL intensity decreases with time, approximately with two decay constants. Although the decrease of the initial PL intensity associated with the increase of sample temperature under CW pumping is still observed in samples covered with a gold layer, this film significantly contributes to reduce the permanent deterioration of the PL intensity. The resistance to degradation of light-emitting silicon nanocrystals can be increased by SP coupling to suppress the permanent deterioration. Controlling the permanent photodeterioration can allow to perform a reliable optical gain measurement.

Keywords: Surface Plasmons, Photoluminescence, photodeterioration, silicon nanocrystals, Ion Implantation

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125 Influence of Silica Fume on Ultrahigh Performance Concrete

Authors: Evaldas Serelis, Vitoldas Vaitkevičius

Abstract:

Silica fume, also known as microsilica (MS) or  condensed silica fume is a by-product of the production of silicon  metal or ferrosilicon alloys. Silica fume is one of the most effective  pozzolanic additives which could be used for ultrahigh performance  and other types of concrete. Despite the fact, however is not entirely  clear, which amount of silica fume is most optimal for UHPC. Main  objective of this experiment was to find optimal amount of silica  fume for UHPC with and without thermal treatment, when different  amount of quartz powder is substituted by silica fume. In this work  were investigated four different composition of UHPC with different  amount of silica fume. Silica fume were added 0, 10, 15 and 20% of  cement (by weight) to UHPC mixture. Optimal amount of silica fume  was determined by slump, viscosity, qualitative and quantitative  XRD analysis and compression strength tests methods.

Keywords: silica fume, compressive strength, XRD, ultrahigh performance concrete

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124 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: P. Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber. 

Keywords: SiC, MOSFET, IGBT, SBD, RC snubber

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123 Wasteless Solid-Phase Method for Conversion of Iron Ores Contaminated with Silicon and Phosphorus Compounds

Authors: А. V. Panko, Е. V. Ablets, I. G. Kovzun, М. А. Ilyashov

Abstract:

Based upon generalized analysis of modern know-how in the sphere of processing, concentration and purification of iron-ore raw materials (IORM), in particular, the most widespread ferrioxide-silicate materials (FOSM), containing impurities of phosphorus and other elements compounds, noted special role of nanotechnological initiatives in improvement of such processes. Considered ideas of role of nanoparticles in processes of FOSM carbonization with subsequent direct reduction of ferric oxides contained in them to metal phase, as well as in processes of alkali treatment and separation of powered iron from phosphorus compounds. Using the obtained results the wasteless method of solid-phase processing, concentration and purification of IORM and FOSM from compounds of phosphorus, silicon and other impurities was developed and it excels known methods of direct iron reduction from iron ores and metallurgical slimes.

Keywords: iron ores, solid-phase reduction, nanoparticles in reduction and purification of iron from silicon and phosphorus, wasteless method of ores processing

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122 Development and Validation of a UPLC Method for the Determination of Albendazole Residues on Pharmaceutical Manufacturing Equipment Surfaces

Authors: R. S. Chandan, M. Vasudevan, Deecaraman, B. M. Gurupadayya

Abstract:

In Pharmaceutical industries, it is very important to remove drug residues from the equipment and areas used. The cleaning procedure must be validated, so special attention must be devoted to the methods used for analysis of trace amounts of drugs. A rapid, sensitive and specific reverse phase ultra performance liquid chromatographic (UPLC) method was developed for the quantitative determination of Albendazole in cleaning validation swab samples. The method was validated using an ACQUITY HSS C18, 50 x 2.1mm, 1.8μ column with a isocratic mobile phase containing a mixture of 1.36g of Potassium dihydrogenphosphate in 1000mL MilliQ water, 2mL of triethylamine and pH adjusted to 2.3 ± 0.05 with ortho-phosphoric acid, Acetonitrile and Methanol (50:40:10 v/v). The flow rate of the mobile phase was 0.5 mL min-1 with a column temperature of 350C and detection wavelength at 254nm using PDA detector. The injection volume was 2µl. Cotton swabs, moisten with acetonitrile were used to remove any residue of drug from stainless steel, teflon, rubber and silicon plates which mimic the production equipment surface and the mean extraction-recovery was found to be 91.8. The selected chromatographic condition was found to effectively elute Albendazole with retention time of 0.67min. The proposed method was found to be linear over the range of 0.2 to 150µg/mL and correlation coefficient obtained is 0.9992. The proposed method was found to be accurate, precise, reproducible and specific and it can also be used for routine quality control analysis of these drugs in biological samples either alone or in combined pharmaceutical dosage forms.

Keywords: residues, albendazole, UPLC, Cleaning validation, swab analysis

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121 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface

Authors: A. A. Sharma, B. J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers’ diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: Acoustics, Semiconductors, quasilongitudinal, reflection and transmission

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120 Highly Efficient Silicon Photomultiplier for Positron Emission Tomography Application

Authors: Guo-Qiang Lo, Fei Sun, Ning Duan

Abstract:

A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 106. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.

Keywords: Positron Emission Tomography, silicon photomultiplier, Photon Detection Efficiency

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119 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Dongning ZHAO, Minkyu Je, Haridas Kuruveettil, Cheong Jia Hao

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Medical Imaging, Ultrasound, Beam Forming, Analog front end, biomicroscope, transimpedance gain

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118 CMOS-Compatible Plasmonic Nanocircuits for On-Chip Integration

Authors: G. Q. Lo, Shiyang Zhu, D. L. Kwong

Abstract:

Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.

Keywords: Plasmonics, Silicon Photonics, on-chip integration

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117 CMOS-Compatible Deposited Materials for Photonic Layers Integrated above Electronic Integrated Circuit

Authors: G. Q. Lo, Shiyang Zhu, D. L. Kwong

Abstract:

Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Integration, Silicon Photonics, CMOS

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116 Ni Metallization on SiGe Nanowire

Authors: Y. Li, K. Buddharaju, X. P. Wang

Abstract:

The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.

Keywords: nanowires, SiGe, germanosilicide

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115 Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

Authors: Z. X. Chen, D. -L. Kwong, T. S. Phua, X. P. Wang, G. -Q. Lo

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device Simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire

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114 Heat Treatment of Aluminum Alloy 7449

Authors: Suleiman E. Al-lubani, Mohammad E. Matarneh, Hussien M. Al-Wedyan, Ala M. Rayes

Abstract:

Aluminum alloy has an extensive range of industrial application due to its consistent mechanical properties and structural integrity. The heat treatment by precipitation technique affected the Magnesium, Silicon Manganese and copper crystals dissolved in the Aluminum alloy. The crystals dislocated to precipitate on the crystal’s boundaries of the Aluminum alloy when given a thermal energy increased its hardness. In this project various times and temperature were varied to find out the best combination of these variables to increase the precipitation of the metals on the Aluminum crystal’s boundaries which will lead to get the highest hardness. These specimens are then tested for their hardness and tensile strength. It is noticed that when the temperature increases, the precipitation increases and consequently the hardness increases. A threshold temperature value (264C0) of Aluminum alloy should not be reached due to the occurrence of recrystalization which causes the crystal to grow. This recrystalization process affected the ductility of the alloy and decrease hardness. In addition, and while increasing the temperature the alloy’s mechanical properties will decrease. The mechanical properties, namely tensile and hardness properties are investigated according to standard procedures. In this research, different temperature and time have been applied to increase hardening.The highest hardness at 100°c in 6 hours equals to 207.31 HBR, while at the same temperature and time the lowest elongation equals to 146.5.

Keywords: Precipitation, Heat Treatment, Aluminum Alloy, recrystalization process, hardness properties, intergranular breakage

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113 Integration of CMOS Biosensor into a Polymeric Lab-on-a-Chip System

Authors: R. Zengerle, F. Lärmer, E. Jung, T. Brettschneider, C. Dorrer, H. Suy, T. Braun, R. Hoofman, M. Bründel

Abstract:

We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.

Keywords: CMOS biosensor, laser bonding, silicon polymer integration, wafer level packaging

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112 Leatherback Turtle (Dermochelys coriacea) after Incubation Eggshell in Andaman Sea, Thailand Study: Microanalysis on Ultrastructure and Elemental Composition

Authors: M. Areekijseree, M. Pumipaiboon, S. Nuamsukon, K. Kittiwattanawong, C. Thongchai, S. Sikiwat, T. Chuen-Im

Abstract:

There are few studies on eggshell of leatherback turtle which is endangered species in Thailand. This study was focusing on the ultrastructure and elemental composition of leatherback turtle eggshells collected from Andaman Sea Shore, Thailand during the nesting season using scanning electron microscope (SEM). Three eggshell layers of leatherback turtle; the outer cuticle layer or calcareous layer, the middle layer or middle multistrata layer and the inner fibrous layer were recognized. The outer calcareous layer was thick and porosity which consisted of loose nodular units of various crystal shapes and sizes. The loose attachment between these units resulted in numerous spaces and openings. The middle layer was compact thick with several multistrata and contained numerous openings connecting to both outer cuticle layer and inner fibrous layer. The inner fibrous layer was compact and thin, and composed of numerous reticular fibers. Energy dispersive X-ray microanalysis detector revealed energy spectrum of X-rays character emitted from all elements on each layer. The percentages of all elements were found in the following order: carbon (C) > oxygen (O) > calcium (Ca) > sulfur (S) > potassium (K) > aluminum (Al) > iodine (I) > silicon (Si) > chlorine (Cl) > sodium (Na) > fluorine (F) > phosphorus (P) > magnesium (Mg). Each layer consisted of high percentage of CaCO3 (approximately 98%) implying that it was essential for turtle embryonic development. A significant difference was found in the percentages of Ca and Mo in the 3layers. Moreover, transition metal, metal and toxic non-metal contaminations were found in leatherback turtle eggshell samples. These were palladium (Pd), molybdenum (Mo), copper (Cu), aluminum (Al), lead (Pb), and bromine (Br). The contamination elements were seen in the outer layers except for Mo. All elements were readily observed and mapped using Smiling program. X-ray images which mapped the location of all elements were showed. Calcium containing in the eggshell appeared in high contents and was widely distributing in clusters of the outer cuticle layer to form CaCO3 structure. Moreover, the accumulation of Na and Cl was observed to form NaCl which was widely distributing in 3 eggshell layers. The results from this study would be valuable on assessing the emergent success in this endangered species.

Keywords: Leatherback turtle (Dermochelys coriacea), SEM (SEI/EDX), turtle eggshell

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111 Thermal Carpet Cloaking Achieved by Layered Metamaterial

Authors: Lien-Wen Chen, Bang-Shiuh Chen

Abstract:

We have devised a thermal carpet cloak theoretically and implemented in silicon using layered metamaterial. The layered metamaterial is composed of single crystalline silicon and its phononic crystal. The design is based on a coordinate transformation. We demonstrate the result with numerical simulation. Great cloaking performance is achieved as a thermal insulator is well hidden under the thermal carpet cloak. We also show that the thermal carpet cloak can even the temperature on irregular surface. Using thermal carpet cloak to manipulate the heat conduction is effective because of its low complexity.

Keywords: cloaking, Metamaterial, Heat Conduction, phononic crystal

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110 Combining Molecular Statics with Heat Transfer Finite Difference Method for Analysis of Nanoscale Orthogonal Cutting of Single-Crystal Silicon Temperature Field

Authors: Zone-Ching Lin, Meng-Hua Lin, Ying-Chih Hsu

Abstract:

This paper uses quasi-steady molecular statics model and diamond tool to carry out simulation temperature rise of nanoscale orthogonal cutting single-crystal silicon. It further qualitatively analyzes temperature field of silicon workpiece without considering heat transfer and considering heat transfer. This paper supposes that the temperature rise of workpiece is mainly caused by two heat sources: plastic deformation heat and friction heat. Then, this paper develops a theoretical model about production of the plastic deformation heat and friction heat during nanoscale orthogonal cutting. After the increased temperature produced by these two heat sources are added up, the acquired total temperature rise at each atom of the workpiece is substituted in heat transfer finite difference equation to carry out heat transfer and calculates the temperature field in each step and makes related analysis.

Keywords: temperature, Finite Difference, Quasi-steady molecular statics, Nanoscale orthogonal cutting

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109 X-Ray Intensity Measurement Using Frequency Output Sensor for Computed Tomography

Authors: R. M. Siddiqui, D. Z. Moghaddam, T. R. Turlapati, S. H. Khan, I. Ul Ahad

Abstract:

Quality of 2D and 3D cross-sectional images produce by Computed Tomography primarily depend upon the degree of precision of primary and secondary X-Ray intensity detection. Traditional method of primary intensity detection is apt to errors. Recently the X-Ray intensity measurement system along with smart X-Ray sensors is developed by our group which is able to detect primary X-Ray intensity unerringly. In this study a new smart X-Ray sensor is developed using Light-to-Frequency converter TSL230 from Texas Instruments which has numerous advantages in terms of noiseless data acquisition and transmission. TSL230 construction is based on a silicon photodiode which converts incoming X-Ray radiation into the proportional current signal. A current to frequency converter is attached to this photodiode on a single monolithic CMOS integrated circuit which provides proportional frequency count to incoming current signal in the form of the pulse train. The frequency count is delivered to the center of PICDEM FS USB board with PIC18F4550 microcontroller mounted on it. With highly compact electronic hardware, this Demo Board efficiently read the smart sensor output data. The frequency output approaches overcome nonlinear behavior of sensors with analog output thus un-attenuated X-Ray intensities could be measured precisely and better normalization could be acquired in order to attain high resolution.

Keywords: Computed Tomography, detector technology, X-Ray intensity measurement

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108 Development of Quasi-Two-Dimensional Nb2O5 for Functional Electrodes of Advanced Electrochemical Systems

Authors: S. Zhuiykov, E. Kats

Abstract:

In recent times there has been a growing interest in the development of quasi-two-dimensional niobium pentoxide (Nb2O5) as a semiconductor for the potential electronic applications such as capacitors, filtration, dye-sensitised solar cells and gas sensing platforms. Therefore once the purpose is established, Nb2O5 can be prepared in a number of nano- and sub-micron-structural morphologies that include rods, wires, belts and tubes. In this study films of Nb2O5 were prepared on gold plated silicon substrate using spin-coating technique and subsequently by mechanical exfoliation. The reason this method was employed was to achieve layers of less than 15nm in thickness. The sintering temperature of the specimen was 800oC. The morphology and structural characteristics of the films were analyzed by Atomic Force Microscopy (AFM), Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).

Keywords: Semiconductor, sol-gel, spin-coating, Mechanical exfoliation, niobium pentoxide, quazitwo- dimensional, two dimensional semiconductors

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107 High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Joo, S. C. Kim

Abstract:

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High Temperature, SiC, hydrogen sensor, Ta2O5 dielectric layer

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106 Specification of Irradiation Conditions in the DONA 5 Rotational Channel of the LVR-15 Reactor

Authors: Zdena Lahodová, Michal Koleška, Ladislav Viererbl

Abstract:

This article summarizes ways to verify neutron fluence for neutron transmutation doping of silicon with phosphorus on the LVR-15 reactor. Neutron fluence is determined using activation detectors placed along the crystal in a strip or encapsulated in a rod holder. Holders are placed at the centre of a water-filled capsule or in an aluminum or silicon ingot that simulates a real single crystal. If the diameter of the crystal is significantly less than the capsule diameter and water from the primary circuit enters the free space in the capsule, neutron interaction in the water changes neutron fluence, affecting axial irradiation homogeneity. The effect of moving the capsule vertically in the channel relative to maximum neutron fluence in the reactor core was also measured. Even a small shift of the capsule-s centre causes great irradiation inhomogeneity. This effect was measured using activation detectors, and was also confirmed by MCNP calculation.

Keywords: Irradiation homogeneity, neutron fluence, neutron transmutation doping, rotational channel

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105 On the Oil Repellency of Nanotextured Aluminum Surface

Authors: G. Momen, R. Jafari, M. Farzaneh

Abstract:

Two different superhydrophobic surfaces were elaborated and their oil repellency behavior was evaluated using several liquid with different surface tension. A silicone rubber/SiO2 nanocomposite coated (A) on aluminum substrate by “spin-coating" and the sample B was an anodized aluminum surface covered by Teflon-like coating. A high static contact angle about ∼162° was measured for two prepared surfaces on which the water droplet rolloff. Scanning electron microscopy (SEM) showed the presence of micro/nanostructures for both sample A and B similar to that of lotus leaf. However the sample A presented significantly different behaviour of wettability against the low surface tension liquid. Sample A has been wetted totally by oil (dodecan) droplet while sample B showed oleophobic behaviour. Oleophobic property of Teflon like coating can be contributed to the presence of CF2 and CF3 functional group which was shown by XPS analysis.

Keywords: superhydrophobic, Oleophobic, Aluminum surface, Nano-texture

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