Search results for: S. Fusi

Authors: Z. X. Chen, N. Singh, D.-L. Kwong

Abstract:

This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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Authors: M. Regis, E. Marin, S. Fusi, M. Pressacco, L. Fedrizzi

Abstract:

Electron Beam Melting (EBM) process was used to prepare porous scaffolds with controlled porosity to ensure optimal levels of osteointegration for different trabeculae sizes. Morphological characterization by means of SEM analyses was carried out to assess pore dimensions; tensile, compression and adhesion tests have been carried out to determine the mechanical behavior. The results indicate that EBM process allows the creation of regular and repeatable porous scaffolds. Mechanical properties greatly depend on pore dimension and on bulk-pore ratio. Adhesion resistance meets the normative requirements, and the overall performance of the produced structures is compatible with potential orthopaedic applications.

Keywords: Additive manufacturing, orthopaedic implants, osteointegration, trabecular structures

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