Search results for: Rf-magnetron sputtered
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 9

Search results for: Rf-magnetron sputtered

9 Deposition of Transparent IGZO Conducting Thin Films by Co-Sputtering of Zn2Ga2O3 and In2O3 Targets at Room Temperature

Authors: Yu-Hsin Chen, Yuan-Tai Hsieh, Cheng-Shong Hong, Chia-Ching Wu, Cheng-Fu Yang, Yu-Jhen Liou

Abstract:

In this study, we investigated (In,Ga,Zn)Ox (IGZO) thin films and examined their characteristics of using Ga2O3-2 ZnO (GZO) co-sputtered In2O3 prepared by dual target radio frequency magnetron sputtering at room temperature in a pure Ar atmosphere. RF powers of 80 W and 70 W were used for GZO and pure In2O3, room temperature (RT) was used as deposition temperature, and the deposition time was changed from 15 min to 60 min. Structural, surface, electrical, and optical properties of IGZO thin films were investigated as a function of deposition time. Furthermore, the GZO co-sputtered In2O3 thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition time due to the room temperature sputtering process. We would show that the co-sputtered IGZO thin films exhibited transparent electrode properties with high transmittance ratio and low resistivity.

Keywords: IGZO, co-sputter, Ga2O3-2 ZnO, In2O3.

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8 Composition Dependent Formation of Sputtered Co-Cu Film on Cr Under-Layer

Authors: Watcharee Rattanasakulthong, Pichai Sirisangsawang, Supree Pinitsoontorn

Abstract:

Sputtered CoxCu100-x films with the different compositions of x = 57.7, 45.8, 25.5, 13.8, 8.8, 7.5 and 1.8 were deposited on Cr under-layer by RF-sputtering. SEM result reveals that the averaged thickness of Co-Cu film and Cr under-layer are 92 nm and 22nm, respectively. All Co-Cu films are composed of Co (FCC) and Cu (FCC) phases in (111) directions on BCC-Cr (110) under-layers. Magnetic properties, surface roughness and morphology of Co-Cu films are dependent on the film composition. The maximum and minimum surface roughness of 3.24 and 1.16nm are observed on the Co7.5Cu92.5 and Co45.8Cu54.2films, respectively. It can be described that the variance of surface roughness of the film because of the difference of the agglomeration rate of Co and Cu atoms on Cr under-layer. The Co57.5Cu42.3, Co45.8Cu54.2 and Co25.5Cu74.5 films shows the ferromagnetic phase whereas the rest of the film exhibits the paramagnetic phase at room temperature. The saturation magnetization, remnant magnetization and coercive field of Co-Cu films on Cr under-layer are slightly increased with increasing the Co composition. It can be concluded that the required magnetic properties and surface roughness of the Co-Cu film can be adapted by the adjustment of the film composition.

Keywords: Co-Cu films, Under-layers, Sputtering, Surface roughness, Magnetic properties, Atomic force microscopy (AFM).

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7 Optical Properties of WO3-NiO Complementary Electrochromic Devices

Authors: Chih-Ming Wang, Chih-Yu Wen, Ying-Chung Chen, Chun-Chieh Wang, Chien-Chung Hsu, Jui-Yang Chang, Jyun-Min Lin

Abstract:

In this study, we developed a complementary electrochromic device consisting of WO3 and NiO films fabricated by rf-magnetron sputtered. The electrochromic properties of WO3 and NiO films were investigated using cyclic voltammograms (CV), performed on WO3 and NiO films immersed in an electrolyte of 1 M LiClO4 in propylene carbonate (PC). Optical and electrochemical of the films, as a function of coloration–bleaching cycle, were characterized using an UV-Vis-NIR spectrophotometer and cyclic voltammetry (CV). After investigating the properties of WO3 film, NiO film, and complementary electrochromic devices, we concluded that this device provides good reversibility, low power consumption of -2.5 V in color state, high variation of transmittance of 58.96%, changes in optical density of 0.81 and good memory effect under open-circuit conditions. In addition, electrochromic component penetration rate can be retained below 20% within 24h, showing preferred memory features; however, component coloring and bleaching response time are about 33s.

Keywords: Complementary electrochromic device, Rf-magnetron sputtered, Transmittance, Memory effect, Optical density change

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6 Fabrication and Characterization of Al2O3 Based Electrical Insulation Coatings Around SiC Fibers

Authors: S. Palaniyappan, P. K. Chennam, M. Trautmann, H. Ahmad, T. Mehner, T. Lampke, G. Wagner

Abstract:

In structural-health monitoring of fiber reinforced plastics (FRPs), every single inorganic fiber sensor that are integrated into the bulk material requires an electrical insulation around itself, when the surrounding reinforcing fibers are electrically conductive. This results in a more accurate data acquisition only from the sensor fiber without any electrical interventions. For this purpose, thin nano-films of aluminium oxide (Al2O3)-based electrical-insulation coatings have been fabricated around the Silicon Carbide (SiC) single fiber sensors through reactive DC magnetron sputtering technique. The sputtered coatings were amorphous in nature and the thickness of the coatings increased with an increase in the sputter time. Microstructural characterization of the coated fibers performed using scanning electron microscopy (SEM) confirmed a homogeneous circumferential coating with no detectable defects or cracks on the surface. X-ray diffraction (XRD) analyses of the as-sputtered and 2 hours annealed coatings (825 & 1125 ˚C) revealed the amorphous and crystalline phases of Al2O3 respectively. Raman spectroscopic analyses produced no characteristic bands of Al2O3, as the thickness of the films was in the nanometer (nm) range, which is too small to overcome the actual penetration depth of the laser used. In addition, the influence of the insulation coatings on the mechanical properties of the SiC sensor fibers has been analyzed.

Keywords: Al2O3 insulation coating, reactive sputtering, SiC single fiber sensor, single fiber tensile test.

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5 Simulation of Superconducting Nanowire Single-Photon Detector with Circuit Modeling

Authors: Seyed Ali Sedigh Zyabari, A. Zarifkar

Abstract:

Single photon detectors have been fabricated NbN nano wire. These detectors are fabricated from high quality, ultra high vacuum sputtered NbN thin films on a sapphire substrate. In this work a typical schematic of the nanowire Single Photon Detector structure and then driving and measurement electronic circuit are shown. The response of superconducting nanowire single photon detectors during a photo detection event, is modeled by a special electrical circuits (two circuit). Finally, current through the wire is calculated by solving equations of models.

Keywords: NbN, nanowire meander, superconducting single photon detector, kinetic inductance.

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4 Measurement of Acoustic Loss in Nano-Layered Coating Developed for Thermal Noise Reduction

Authors: E. Cesarini, M. Lorenzini, R. Cardarelli, S. Chao, E. Coccia, V. Fafone, Y. Minenkow, I. Nardecchia, I. M. Pinto, A. Rocchi, V. Sequino, C. Taranto

Abstract:

Structural relaxation processes in optical coatings represent a fundamental limit to the sensitivity of gravitational waves detectors, MEMS, optical metrology and entangled state experiments. To face this problem, many research lines are now active, in particular the characterization of new materials and novel solutions to be employed as coatings in future gravitational wave detectors. Nano-layered coating deposition is among the most promising techniques. We report on the measurement of acoustic loss of nm-layered composites (Ti2O/SiO2), performed with the GeNS nodal suspension, compared with sputtered λ/4 thin films nowadays employed.

Keywords: Mechanical measurement, nanomaterials, optical coating, thermal noise.

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3 Design and Fabrication of an Electrostatically Actuated Parallel-Plate Mirror by 3D-Printer

Authors: J. Mizuno, S. Takahashi

Abstract:

In this paper, design and fabrication of an actuated parallel-plate mirror based on a 3D-printer is described. The mirror and electrode layers are fabricated separately and assembled thereafter. The alignment is performed by dowel pin-hole pairs fabricated on the respective layers. The electrodes are formed on the surface of the electrode layer by Au ion sputtering using a suitable mask, which is also fabricated by a 3D-printer.For grounding the mirror layer, except the contact area with the electrode paths, all the surface is Au ion sputtered. 3D-printers are widely used for creating 3D models or mock-ups. The authors have recently proposed that these models can perform electromechanical functions such as actuators by suitably masking them followed by metallization process. Since the smallest possible fabrication size is in the order of sub-millimeters, these electromechanical devices are named by the authors as SMEMS (Sub-Milli Electro-Mechanical Systems) devices. The proposed mirror described in this paper which consists of parallel-plate electrostatic actuators is also one type of SMEMS devices. In addition, SMEMS is totally environment-clean compared to MEMS (Micro Electro-Mechanical Systems) fabrication processes because any hazardous chemicals or gases are utilized.

Keywords: MEMS, parallel-plate mirror, SMEMS, 3D-printer.

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2 Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

Authors: Hamdi Muhyuddin D. Barra, Henry J. Ramos

Abstract:

Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The magnetic enhancement is aimed at optimizing the sputtering rate and the sputtering yield of the process. The Sm-Co permanent magnets are placed below the Ti target for better sputtering by argon. The Ti target is biased from –250V to – 350V and is sputtered by Ar plasma produced at discharge current of 2.5–4A and discharge potential of 60–90V. Steel substrates of dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit bright gold color associated with TiN. XRD characterization confirmed the effective TiN synthesis as all samples exhibit the (200) and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet. Cross-sectional SEM results showed increase in the TiN deposition rate of up to 0.35μm/min. This doubles what was previously obtained [1]. Scanning electron micrograph results give a comparative morphological picture of the samples. Vickers hardness results gave the largest hardness value of 21.094GPa.

Keywords: Chemical vapor deposition, Magnetized sheetplasma, Thin-film synthesis, Titanium nitride.

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1 Wetting Characterization of High Aspect Ratio Nanostructures by Gigahertz Acoustic Reflectometry

Authors: C. Virgilio, J. Carlier, P. Campistron, M. Toubal, P. Garnier, L. Broussous, V. Thomy, B. Nongaillard

Abstract:

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.

Keywords: Wetting, acoustic reflectometry, gigahertz, semiconductor.

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