Search results for: Rectifying%20behavior.
Commenced in January 2007
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Edition: International
Paper Count: 10

Search results for: Rectifying%20behavior.

10 High Optical Properties and Rectifying Behavior of ZnO (Nano and Microstructures)/Si Heterostructures

Authors: Ramin Yousefi, Muhamad. Rasat. Muhamad

Abstract:

We investigated a modified thermal evaporation method in the growth process of ZnO nanowires. ZnO nanowires were fabricated on p-type silicon substrates without using a metal catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursor was used to grow the ZnO nanowires. The substrates were placed in different temperature zones, and ZnO nanowires with different diameters were obtained for the different substrate temperatures. In addition to the nanowires, ZnO microdiscs with different diameters were obtained on another substrate, which was placed at a lower temperature than the other substrates. The optical properties and crystalline quality of the ZnO nanowires and microdiscs were characterized by room temperature photoluminescence (PL) and Raman spectrometers. The PL and Raman studies demonstrated that the ZnO nanowires and microdiscs grown using such set-up had good crystallinity with excellent optical properties. Rectifying behavior of ZnO/Si heterostructures was characterized by a simple DC circuit.

Keywords: ZnO nano and microstructures, Photoluminescence, Raman, Rectifying behavior.

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9 SURF Based Image Matching from Different Angle of Viewpoints using Rectification and Simplified Orientation Correction

Authors: K.M.Goh, M.M.Mokji, S.A.R. Abu-Bakar

Abstract:

Speeded-Up Robust Feature (SURF) is commonly used for feature matching in stereovision because of their robustness towards scale changes and rotational changes. However, SURF feature cannot cope with large viewpoint changes or skew distortion. This paper introduces a method which can help to improve the wide baseline-s matching performance in term of accuracy by rectifying the image using two vanishing points. Simplified orientation correction was used to remove the false matching..

Keywords: Affine, orientation, projective, SURF.

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8 Connected Objects with Optical Rectenna for Wireless Information Systems

Authors: Chayma Bahar, Chokri Baccouch, Hedi Sakli, Nizar Sakli

Abstract:

Harvesting and transport of optical and radiofrequency signals are a topical subject with multiple challenges. In this paper, we present a Optical RECTENNA system. We propose here a hybrid system solar cell antenna for 5G mobile communications networks. Thus, we propose rectifying circuit. A parametric study is done to follow the influence of load resistance and input power on Optical RECTENNA system performance. Thus, we propose a solar cell antenna structure in the frequency band of future 5G standard in 2.45 GHz bands.

Keywords: Antenna, Rectenna, solar cell, 5G, optical RECTENNA.

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7 Image Segment Matching Using Affine- Invariant Regions

Authors: Ibrahim El rube'

Abstract:

In this paper, a method for matching image segments using triangle-based (geometrical) regions is proposed. Triangular regions are formed from triples of vertex points obtained from a keypoint detector (SIFT). However, triangle regions are subject to noise and distortion around the edges and vertices (especially acute angles). Therefore, these triangles are expanded into parallelogramshaped regions. The extracted image segments inherit an important triangle property; the invariance to affine distortion. Given two images, matching corresponding regions is conducted by computing the relative affine matrix, rectifying one of the regions w.r.t. the other one, then calculating the similarity between the reference and rectified region. The experimental tests show the efficiency and robustness of the proposed algorithm against geometrical distortion.

Keywords: Image matching, key point detection, affine invariant, triangle-shaped segments.

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6 Molecular Electronic Devices based on Carotenoid Derivatives

Authors: Vicente F. P. Aleixo, Augusto C. F. Saraiva, Jordan Del Nero

Abstract:

The production of devices in nanoscale with specific molecular rectifying function is one of the most significant goals in state-of-art technology. In this work we show by ab initio quantum mechanics calculations coupled with non-equilibrium Green function, the design of an organic two-terminal device. These molecular structures have molecular source and drain with several bridge length (from five up to 11 double bonds). Our results are consistent with significant features as a molecular rectifier and can be raised up as: (a) it can be used as bi-directional symmetrical rectifier; (b) two devices integrated in one (FET with one operational region, and Thyristor thiristor); (c) Inherent stability due small intrinsic capacitance under forward/reverse bias. We utilize a scheme for the transport mechanism based on previous properties of ¤Ç bonds type that can be successfully utilized to construct organic nanodevices.

Keywords: ab initio, Carotenoid, Charge Transfer, Nanodevice

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5 Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode

Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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4 Investigation of Temperature-Dependent Electrical Properties of Tc-CuPc: PCBM Bulk Heterojunction (BHJ) under Dark Conditions

Authors: Shahid M. Khan, Muhammad H. Sayyad

Abstract:

An organic bulk heterojunction (BHJ) was fabricated using a blended film containing Copper (II) tetrakis(4-acumylphenoxy) phthalocyanine (Tc-CuPc) along with [6,6]-Phenyl C61 butyric acid methyl ester (PCBM). Weight ratio between Tc-CuPc and PCBM was 1:1. The electrical properties of Tc-CuPc: PCBM BHJ were examined. Rectifying nature of the BHJ was displayed by current-voltage (I-V) curves, recorded in dark and at various temperatures. At low voltages, conduction was ohmic succeeded by space-charge limiting current (SCLC) conduction at higher voltages in which exponential trap distribution was dominant. Series resistance, shunt resistance, ideality factor, effective barrier height and mobility at room temperature were found to be 526 4, 482 k4, 3.7, 0.17 eV and 2×10-7 cm2V-1s-1 respectively. Temperature effect towards different BHJ parameters was observed under dark condition.

Keywords: Bulk heterojunction, PCBM, phthalocyanine, spin coating.

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3 Investigation of the Electronic Properties of Au/methyl-red/Ag Surface type Schottky Diode by Current-Voltage Method

Authors: Zubair Ahmad, Muhammad Hassan Sayyad

Abstract:

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.

Keywords: Surface type Schottky diodes, Methyl-red, Currentvoltage method

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2 Analysis of the Root Causes of Transformer Bushing Failures

Authors: E. A. Feilat, I. A. Metwally, S. Al-Matri, A. S. Al-Abri

Abstract:

This paper presents the results of a comprehensive investigation of five blackouts that occurred on 28 August to 8 September 2011 due to bushing failures of the 132/33 kV, 125 MVA transformers at JBB Ali Grid station. The investigation aims to explore the root causes of the bushing failures and come up with recommendations that help in rectifying the problem and avoiding the reoccurrence of similar type of incidents. The incident reports about the failed bushings and the SCADA reports at this grid station were examined and analyzed. Moreover, comprehensive power quality field measurements at ten 33/11 kV substations (S/Ss) in JBB Ali area were conducted, and frequency scans were performed to verify any harmonic resonance frequencies due to power factor correction capacitors. Furthermore, the daily operations of the on-load tap changers (OLTCs) of both the 125 MVA and 20 MVA transformers at JBB Ali Grid station have been analyzed. The investigation showed that the five bushing failures were due to a local problem, i.e. internal degradation of the bushing insulation. This has been confirmed by analyzing the time interval between successive OLTC operations of the faulty grid transformers. It was also found that monitoring the number of OLTC operations can help in predicting bushing failure.

Keywords: Modeling and simulation, power system, transformer, bushing, OLTC, power quality, partial discharge.

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1 Transformer Life Enhancement Using Dynamic Switching of Second Harmonic Feature in IEDs

Authors: K. N. Dinesh Babu, P. K. Gargava

Abstract:

Energization of a transformer results in sudden flow of current which is an effect of core magnetization. This current will be dominated by the presence of second harmonic, which in turn is used to segregate fault and inrush current, thus guaranteeing proper operation of the relay. This additional security in the relay sometimes obstructs or delays differential protection in a specific scenario, when the 2nd harmonic content was present during a genuine fault. This kind of scenario can result in isolation of the transformer by Buchholz and pressure release valve (PRV) protection, which is acted when fault creates more damage in transformer. Such delays involve a huge impact on the insulation failure, and chances of repairing or rectifying fault of problem at site become very dismal. Sometimes this delay can cause fire in the transformer, and this situation becomes havoc for a sub-station. Such occurrences have been observed in field also when differential relay operation was delayed by 10-15 ms by second harmonic blocking in some specific conditions. These incidences have led to the need for an alternative solution to eradicate such unwarranted delay in operation in future. Modern numerical relay, called as intelligent electronic device (IED), is embedded with advanced protection features which permit higher flexibility and better provisions for tuning of protection logic and settings. Such flexibility in transformer protection IEDs, enables incorporation of alternative methods such as dynamic switching of second harmonic feature for blocking the differential protection with additional security. The analysis and precautionary measures carried out in this case, have been simulated and discussed in this paper to ensure that similar solutions can be adopted to inhibit analogous issues in future.

Keywords: Differential protection, intelligent electronic device (IED), 2nd harmonic, inrush inhibit.

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