Search results for: High gain power amplifier

Authors: Suresh Alapati, Sreehari Rao Patri, K. S. R. Krishna Prasad

Abstract:

Anultra-low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gainenhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 )A. An undershot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 )s for the output voltage undershooting case. The load regulation is of 2.77 )V/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: Capacitor-less LDO, frequency compensation, Transient response, latch, self-biased differential amplifier.

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Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm² and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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Authors: Surinder Singh, Adish Bindal

Abstract:

The effects of the pumping wavelength and their power on the gain flattening of a fiber Raman amplifier (FRA) are investigated. The multi-wavelength pumping scheme is utilized to achieve gain flatness in FRA. It is proposed that gain flatness becomes better with increase in number of pumping wavelengths applied. We have achieved flat gain with 0.27 dB fluctuation in a spectral range of 1475-1600 nm for a Raman fiber length of 10 km by using six pumps with wavelengths with in the 1385-1495 nm interval. The effect of multi-wavelength pumping scheme on gain saturation in FRA is also studied. It is proposed that gain saturation condition gets improved by using this scheme and this scheme is more useful for higher spans of Raman fiber length.

Keywords: FRA, gain, pumping, WDM.

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

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The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: Amplifier, DVB-T, LDMOS, MOSFETS.

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Authors: Chokri Jebali, Noureddine Boulejfen, Ali Gharsallah, Fadhel M. Ghannouchi

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In this paper, a system level behavioural model for RF power amplifier, which exhibits memory effects, and based on multibranch system is proposed. When higher order terms are included, the memory polynomial model (MPM) exhibits numerical instabilities. A set of memory orthogonal polynomial model (OMPM) is introduced to alleviate the numerical instability problem associated to MPM model. A data scaling and centring algorithm was applied to improve the power amplifier modeling accuracy. Simulation results prove that the numerical instability can be greatly reduced, as well as the model precision improved with nonlinear model.

Keywords: power amplifier, orthogonal model, polynomialmodel , memory effects.

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Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: Cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier.

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Authors: Parekhan M. Aljaff, Banaz O. Rasheed

Abstract:

The exact gain shape profile of erbium doped fiber amplifiers (EDFA`s) are depends on fiber length and Er3 ion densities. This paper optimized several of erbium doped fiber parameters to obtain high performance characteristic at pump wavelengths of λp= 980 nm and λs= 1550 nm for three different pump powers. The maximum gain obtained for pump powers (10, 30 and 50mw) is nearly (19, 30 and 33 dB) at optimizations. The required numerical aperture NA to obtain maximum gain becomes less when pump power increased. The amplifier gain is increase when Er+3doped near the center of the fiber core. The simulation has been done by using optisystem 5.0 software (CAD for Photonics, a license product of a Canadian based company) at 2.5 Gbps.

Keywords: EDFA, Erbium Doped Fiber, optimization OpticalAmplifiers.

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Authors: Syed Iftekhar Ali, M. S. Islam

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In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.

Keywords: content-addressable memory, energy consumption, feedback, peak power, sensing scheme, sense amplifier, ternary.

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Authors: Sanjay Singh, M Sathish Kumar, H. S Mruthyunjaya

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Multicarrier transmission system such as Orthogonal Frequency Division Multiplexing (OFDM) is a promising technique for high bit rate transmission in wireless communication system. OFDM is a spectrally efficient modulation technique that can achieve high speed data transmission over multipath fading channels without the need for powerful equalization techniques. However the price paid for this high spectral efficiency and less intensive equalization is low power efficiency. OFDM signals are very sensitive to nonlinear effects due to the high Peak-to-Average Power Ratio (PAPR), which leads to the power inefficiency in the RF section of the transmitter. This paper investigates the effect of PAPR reduction on the performance parameter of multicarrier communication system. Performance parameters considered are power consumption of Power Amplifier (PA) and Digital-to-Analog Converter (DAC), power amplifier efficiency, SNR of DAC and BER performance of the system. From our analysis it is found that irrespective of PAPR reduction technique being employed, the power consumption of PA and DAC reduces and power amplifier efficiency increases due to reduction in PAPR. Moreover, it has been shown that for a given BER performance the requirement of Input-Backoff (IBO) reduces with reduction in PAPR.

Keywords: BER, Crest Factor (CF), Digital-to-Analog Converter(DAC), Input-Backoff (IBO), Orthogonal Frequency Division Multiplexing(OFDM), Peak-to-Average Power Ratio (PAPR), PowerAmplifier efficiency, SNR

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Authors: Salwa M. Salah Eldeen, Fathi A. Farag, Abd Allah M. Moselhy

Abstract:

This paper proposed a new CAD tools for microwave amplifier design. The proposed tool is based on survey about the broadband amplifier design methods, such as the Feedback amplifiers, balanced amplifiers and Compensated Matching Network The proposed tool is developed for broadband amplifier using a compensated matching network "unconditional stability amplifier". The developed program is based on analytical procedures with ability of smith chart explanation. The C# software is used for the proposed tools implementation. The program is applied on broadband amplifier as an example for testing. The designed amplifier is considered as a broadband amplifier at the range 300-700 MHz. The results are highly agreement with the expected results. Finally, these methods can be extended for wide band amplifier design.

Keywords: Broadband amplifier (BBA), Compensated Matching Network, Microwave Amplifier.

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Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

We evaluate the average energy consumption per bit in Optical Packet Switches equipped with BENES switching fabric realized in Semiconductor Optical Amplifier (SOA) technology. We also study the impact that the Amplifier Spontaneous Emission (ASE) noise generated by a transmission system has on the power consumption of the BENES switches due to the gain saturation of the SOAs used to realize the switching fabric. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 2, 34 · 10-1 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Benes, Amplifier Spontaneous Emission Noise, EnergyConsumption, Optical Packet Switch.

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Saad Mutashar, M. A. Hannan, S. A. Samad, A. Hussain

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This paper deals with the modified wireless power transmission system for biomedical implanted devices. The system consists of efficient class-E power amplifier and inductive power links based on spiral circular transmitter and receiver coils. The model of the class-E power amplifier operated with 13.56 MHz is designed, discussed and analyzed in which it is achieved 87.2% of efficiency. The inductive coupling method is used to achieve link efficiency up to 73% depending on the electronic remote system resistance. The improved system powered with 3.3 DC supply and the voltage across the transmitter side is 40 V whereas, cross the receiver side is 12 V which is rectified to meet the implanted micro-system circuit requirements. The system designed and simulated by NI MULTISIM 11.02.

Keywords: Wireless Transmission, inductive coupling, implanted devices, class-E power amplifier, coils design.

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Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

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A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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Authors: Ashraf Abuelhaija, Klaus Solbach

Abstract:

In Ultra high-field MRI scanners (3T and higher), parallel RF transmission techniques using multiple RF chains with multiple transmit elements are a promising approach to overcome the high-field MRI challenges in terms of inhomogeneity in the RF magnetic field and SAR. However, mutual coupling between the transmit array elements disturbs the desirable independent control of the RF waveforms for each element. This contribution demonstrates a 18 dB improvement of decoupling (isolation) performance due to the very low output impedance of our 1 kW power amplifier.

Keywords: EM coupling, Inter-element isolation, Magnetic resonance imaging (MRI), Parallel Transmit.

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Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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Authors: Inderpreet Kaur, Neena Gupta

Abstract:

In this paper, the gain spectrum of EDFA has been broadened by implementing HTE configuration for S and C band. On using this configuration an amplification bandwidth of 76nm ranging from 1479nm to 1555nm with a peak gain of 26dB has been obtained.

Keywords: C band, DWDM system, EDFA, Gain, HTE, Hybrid Fiber Amplifier, S band.

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Authors: Yngvar Berg, Mehdi Azadmehr

Abstract:

In this paper we present a linear autozeroing ultra lowvoltage amplifier. The autozeroing performed by all ULV circuits is important to reduce the impact of noise and especially avoid power supply noise in mixed signal low-voltage CMOS circuits. The simulated data presented is relevant for a 90nm TSMC CMOS process.

Keywords: Low-voltage, trans conductance amplifier, linearity, floating-gate.

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Authors: V. Eramo, E. Miucci, A. Cianfrani, A. Germoni, M. Listanti

Abstract:

The power consumption of an Optical Packet Switch equipped with SOA technology based Spanke switching fabric is evaluated. Sophisticated analytical models are introduced to evaluate the power consumption versus the offered traffic, the main switch parameters, and the used device characteristics. The impact of Amplifier Spontaneous Emission (ASE) noise generated by a transmission system on the power consumption is investigated. As a matter of example for 32×32 switches supporting 64 wavelengths and offered traffic equal to 0,8, the average energy consumption per bit is 5, 07 · 10-2 nJ/bit and increases if ASE noise introduced by the transmission systems is increased.

Keywords: Spanke, Amplifier Spontaneous Emission Noise, Power Consumption, Optical Packet Switch.

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Authors: Wei Yi Lim, M. Annamalai Arasu, M. Kumarasamy Raja, Minkyu Je

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In this paper, the design of wide-swing constant transconductance (g_m) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (G_m) generated by the constant g_m bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in G_m with process, temperature and supply voltage (PVT).  Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the g_m variation is eventually concluded at between -3 % to 7 %. With the slight variation in the g_m value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S₂₁) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant g_m circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process. 

Keywords: Transconductance, LNA, temperature, process.

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Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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Authors: Tarun Kumar Rawat, Abhirup Lahiri, Ashish Gupta

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In this paper, we analyze the effect of noise in a single- ended input differential amplifier working at high frequencies. Both extrinsic and intrinsic noise are analyzed using time domain method employing techniques from stochastic calculus. Stochastic differential equations are used to obtain autocorrelation functions of the output noise voltage and other solution statistics like mean and variance. The analysis leads to important design implications and suggests changes in the device parameters for improved noise characteristics of the differential amplifier.

Keywords: Single-ended input differential amplifier, Noise, stochastic differential equation, mean and variance.

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Authors: Wang Xing-hua, Zhong Shun-an, Zhang Zhuo

Abstract:

A kind of behavior model for discrete sampling and hold amplifier with charge transmission is analyzed. The transfer function and behavior features are based on the main AC responses of operation amplifier. The result used in pipelined and sigma-delta ADC shows the exact of model of sampling and hold amplifier, and the non-ideal factors are taken into account.

Keywords: SHA, response, behavior, transfer function.

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Authors: Kadam Bhambri, Neena Gupta

Abstract:

All optical wavelength conversion is essential in present day optical networks for transparent interoperability, contention resolution, and wavelength routing. The incorporation of all optical wavelength convertors leads to better utilization of the network resources and hence improves the efficiency of optical networks. Wavelength convertors that can work with Dispersion Managed (DM) solitons are attractive due to their superior transmission capabilities. In this paper, wavelength conversion for dispersion managed soliton signals was demonstrated at 100 Gbps through semiconductor optical amplifier and an optical filter. The wavelength conversion was achieved for a 1550 nm input signal to1555nm output signal. The output signal was measured in terms of BER, Q factor and system margin.    

Keywords: All optical wavelength conversion, dispersion managed solitons, semiconductor optical amplifier, cross gain modulation.

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Authors: S. Zouari, H. Daoud, M. Loulou, P. Loumeau, N. Masmoudi

Abstract:

A wideband 2-1-1 cascaded ΣΔ modulator with a single-bit quantizer in the two first stages and a 4-bit quantizer in the final stage is developed. To reduce sensitivity of digital-to-analog converter (DAC) nonlinearities in the feedback of the last stage, dynamic element matching (DEM) is introduced. This paper presents two modelling approaches: The first is MATLAB description and the second is VHDL-AMS modelling of the proposed architecture and exposes some high-level-simulation results allowing a behavioural study. The detail of both ideal and non-ideal behaviour modelling are presented. Then, the study of the effect of building blocks nonidealities is presented; especially the influences of nonlinearity, finite operational amplifier gain, amplifier slew rate limitation and capacitor mismatch. A VHDL-AMS description presents a good solution to predict system-s performances and can provide sensitivity curves giving the impact of nonidealities on the system performance.

Keywords: behavioural study, DAC nonlinearity, DEM, ΣΔ modulator, VHDL-AMS modelling.

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Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: Finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier.

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Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

Abstract:

An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: Butterworth filter, active RC, 60 GHz, CMOS, dual bandwidth, Cherry-Hooper amplifier.

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Authors: Jaeho Han, Moonjung Kim, Won-Ho Kim, Chang-Ho Hyun

Abstract:

This paper introduces a high-gain observer based state of charge(SOC) estimator for lithium-Ion batteries. The proposed SOC estimator has a high-gain observer(HGO) structure. The HGO scheme enhances the transient response speed and diminishes the effect of uncertainties. Furthermore, it guarantees that the output feedback controller recovers the performance of the state feedback controller when the observer gain is sufficiently high. In order to show the effectiveness of the proposed method, the linear RC battery model in ADVISOR is used. The performance of the proposed method is compared with that of the conventional linear observer(CLO) and some simulation result is given.

Keywords: SOC, high-gain, observer, uncertainties, robust

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