Search results for: Complementary Metal Oxide Semiconductor (CMOS)
1225 130 nm CMOS Mixer and VCO for 2.4 GHz Low-power Wireless Personal Area Networks
Authors: Gianluca Cornetta, David J. Santos
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This paper describes a 2.4 GHz passive switch mixer and a 5/2.5 GHz voltage-controlled negative Gm oscillator (VCO) with an inversion-mode MOS varactor. Both circuits are implemented using a 1P8M 0.13 μm process. The switch mixer has an input referred 1 dB compression point of -3.89 dBm and a conversion gain of -0.96 dB when the local oscillator power is +2.5 dBm. The VCO consumes only 1.75 mW, while drawing 1.45 mA from a 1.2 V supply voltage. In order to reduce the passives size, the VCO natural oscillation frequency is 5 GHz. A clocked CMOS divideby- two circuit is used for frequency division and quadrature phase generation. The VCO has a -109 dBc/Hz phase noise at 1 MHz frequency offset and a 2.35-2.5 GHz tuning range (after the frequency division), thus complying with ZigBee requirements.Keywords: Switch Mixers, Varactors, IEEE 802.15.4 (ZigBee), Direct Conversion Receiver, Wireless Sensor Networks.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 21621224 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies
Authors: Zina Saheb, Ezz El-Masry
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As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 29361223 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface
Authors: A. A. Sharma, B. J. N. Sharma
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This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers’ diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.
Keywords: Quasilongitudinal, reflection and transmission, semiconductors, acoustics.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 11601222 Design of Folded Cascode OTA in Different Regions of Operation through gm/ID Methodology
Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou
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This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 116251221 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation
Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn
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Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 8151220 Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation
Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain
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In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.Keywords: Op-amp, rail-to-rail output, Miller compensation, negative Miller capacitance.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 22741219 Influence of MgO Physically Mixed with Tungsten Oxide Supported Silica Catalyst on Coke Formation
Authors: T. Thitiapichart, P. Praserthdama
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The effect of additional magnesium oxide (MgO) was investigated by using the tungsten oxide supported on silica catalyst (WOx/SiO2) physically mixed with MgO in a weight ratio 1:1. The both fresh and spent catalysts were characterized by FT-Raman spectrometer, UV-Vis spectrometer, X-Ray diffraction (XRD) and temperature programmed oxidation (TPO). The results indicated that the additional MgO could enhance the conversion of trans-2-butene due to isomerization reaction. However, adding MgO would increase the amount of coke deposit on the WOx/SiO2 catalyst. The TPO profile presented two peaks when the WOx/SiO2 catalyst was physically mixed with MgO. The further peak was suggested that came from coke precursor could be produced by isomerization reaction of undesired product. Then, the occurred coke precursor could deposit and form coke on the acid catalyst.Keywords: Coke formation, metathesis, magnesium oxide, physically mix.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 23441218 The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz
Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour
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A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17041217 Graphene Oxide Fiber with Different Exfoliation Time and Activated Carbon Particle
Authors: Nuray Uçar, Mervin Ölmez, Özge Alptoğa, Nilgün K. Yavuz, Ayşen Önen
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In recent years, research on continuous graphene oxide fibers has been intensified. Therefore, many factors of production stages are being studied. In this study, the effect of exfoliation time and presence of activated carbon particle (ACP) on graphene oxide fiber’s properties has been analyzed. It has been seen that cross-sectional appearance of sample with ACP is harsh and porous because of ACP. The addition of ACP did not change the electrical conductivity. However, ACP results in an enormous decrease of mechanical properties. Longer exfoliation time results to higher crystallinity degree, C/O ratio and less d space between layers. The breaking strength and electrical conductivity of sample with less exfoliation time is some higher than sample with high exfoliation time.
Keywords: Activated carbon, coagulation by wet spinning, exfoliation, graphene oxide fiber.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 15921216 Carbon Nanotubes Based Porous Framework for Filtration Applications Using Industrial Grinding Waste
Authors: V. J. Pillewan, D. N. Raut, K. N. Patil, D. K. Shinde
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Forging, milling, turning, grinding and shaping etc. are the various industrial manufacturing processes which generate the metal waste. Grinding is extensively used in the finishing operation. The waste generated contains significant impurities apart from the metal particles. Due to these significant impurities, it becomes difficult to process and gets usually dumped in the landfills which create environmental problems. Therefore, it becomes essential to reuse metal waste to create value added products. Powder injection molding process is used for producing the porous metal matrix framework. This paper discusses the presented design of the porous framework to be used for the liquid filter application. Different parameters are optimized to obtain the better strength framework with variable porosity. Carbon nanotubes are used as reinforcing materials to enhance the strength of the metal matrix framework.Keywords: Grinding waste, powder injection molding, carbon nanotubes, metal matrix composites.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 10641215 Charge-Pump with a Regulated Cascode Circuit for Reducing Current Mismatch in PLLs
Authors: Jae Hyung Noh, Hang Geun Jeong
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The charge-pump circuit is an important component in a phase-locked loop (PLL). The charge-pump converts Up and Down signals from the phase/frequency detector (PFD) into current. A conventional CMOS charge-pump circuit consists of two switched current sources that pump charge into or out of the loop filter according to two logical inputs. The mismatch between the charging current and the discharging current causes phase offset and reference spurs in a PLL. We propose a new charge-pump circuit to reduce the current mismatch by using a regulated cascode circuit. The proposed charge-pump circuit is designed and simulated by spectre with TSMC 0.18-μm 1.8-V CMOS technology.
Keywords: Phase-locked loop (PLL), charge-pump, phase/frequency detector (PFD), regulated cascode.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 38751214 Reversible Signed Division for Computing Systems
Authors: D. Krishnaveni, M. Geetha Priya
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Applications of reversible logic gates in the design of complex integrated circuits provide power optimization. This technique finds a great use in low power CMOS design, optical computing, quantum computing and nanotechnology. This paper proposes a reversible signed division circuit that can divide an n-bit signed dividend with an n-bit signed divisor using non-restoration division logic. The proposed design adequately addresses the ‘delay’ there by improving the efficiency of the circuit. An attempt is made to design a reversible signed division circuit. This paper provides a threshold to build more complex arithmetic systems using reversible logic, thus increasing the performance of computing systems.
Keywords: Low power CMOS, quantum computing, reversible logic gates, shift register, signed division.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 12101213 The Determination of Heavy Metal in Herb Used in Dusit Community to Develop a Sustainable Quality of Life
Authors: Chinnawat Satsananan
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This research aimed to find amount of heavy metal in herb used in Dusit community and compare of heavy metal in each part by quantity in herb and standard determination in Thai herb books to develop a sustainable quality of life, the result of study in 14 herbs do not find sample of heavy metal., by quantity of heavy contamination of 4 kinds: Cd, Co, Fe and Pb have lower than standard of 2 organizations: Thai herb standard, and World Health Organization, from the test 14 herbs have Fe in every part of herbs and all 14 kinds has Fe that is necessary for our health.
Keywords: Herbs Plants, Heavy Metal, Dusit District
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17901212 CMOS Solid-State Nanopore DNA System-Level Sequencing Techniques Enhancement
Authors: Syed Islam, Yiyun Huang, Sebastian Magierowski, Ebrahim Ghafar-Zadeh
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This paper presents system level CMOS solid-state nanopore techniques enhancement for speedup next generation molecular recording and high throughput channels. This discussion also considers optimum number of base-pair (bp) measurements through channel as an important role to enhance potential read accuracy. Effective power consumption estimation offered suitable range of multi-channel configuration. Nanopore bp extraction model in statistical method could contribute higher read accuracy with longer read-length (200 < read-length). Nanopore ionic current switching with Time Multiplexing (TM) based multichannel readout system contributed hardware savings.
Keywords: DNA, Nanopore, Amplifier, ADC, Multichannel.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 28671211 A Novel Low Power Digitally Controlled Oscillator with Improved linear Operating Range
Authors: Nasser Erfani Majd, Mojtaba Lotfizad
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In this paper, an ultra low power and low jitter 12bit CMOS digitally controlled oscillator (DCO) design is presented. Based on a ring oscillator implemented with low power Schmitt trigger based inverters. Simulation of the proposed DCO using 32nm CMOS Predictive Transistor Model (PTM) achieves controllable frequency range of 550MHz~830MHz with a wide linearity and high resolution. Monte Carlo simulation demonstrates that the time-period jitter due to random power supply fluctuation is under 31ps and the power consumption is 0.5677mW at 750MHz with 1.2V power supply and 0.53-ps resolution. The proposed DCO has a good robustness to voltage and temperature variations and better linearity comparing to the conventional design.Keywords: digitally controlled oscillator (DCO), low power, jitter; good linearity, robust
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 18491210 Explicit Delay and Power Estimation Method for CMOS Inverter Driving on-Chip RLC Interconnect Load
Authors: Susmita Sahoo, Madhumanti Datta, Rajib Kar
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The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.Keywords: Delay, Inverter, Short Circuit Power, ¤Ç-Model, RLCInterconnect, VLSI
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16461209 Preparation of Nanosized Iron Oxide and their Photocatalytic Properties for Congo Red
Authors: Akram Hosseinian, Hourieh Rezaei, Ali Reza Mahjoub
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Nanostructured Iron Oxide with different morphologies of rod-like and granular have been suc-cessfully prepared via a solid-state reaction in the presence of NaCl, NaBr, NaI and NaN3, respectively. The added salts not only prevent a drastic increase in the size of the products but also provide suitable conditions for the oriented growth of primary nanoparticles. The formation mechanisms of these materials by solid-state reaction at ambient temperature are proposed. The photocatalytic experiments for congo red (CR) have demonstrated that the mixture of α-Fe2O3 and Fe3O4 nanostructures were more efficient than α-Fe2O3 nanostructures.Keywords: Nano, Iron Oxide, Solid-State, Halide salts, Congored
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 25901208 Heavy Metal Concentrations in Fanworth (Cabombafurcata) from Lake Chini, Malaysia
Authors: Ahmad, A.K., Shuhaimi-Othman, M. Hoon, L.P.
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Study was conducted to determine the concentration of copper, cadmium, lead and zinc in Cabomba furcata that found abundance in Lake Chini. This aquatic plant was collected randomly within the lake for heavy metal determination. Water quality measurement was undertaken in situ for temperature, pH, conductivity and dissolved oksigen using portable multi sensor probe YSI model 556. The C. furcata was digested using wet digestion method and heavy metal concentrations were analysed using Atomic Absorption Spectrometer (AAS) Perkin Elmer 4100B (flame method). Result of water quality classify Lake Chini between class II to class III using Malaysian Water Quality Standard. According to this standard, Lake Chini has moderate quality, which normal for natural lake. Heavy metal concentrations in C.furcata were low and found to be lower than the critical toxic value in aquatic plants. Oneway ANOVA test indicated the heavy metal concentrations in C.furcata were significantly differ between sampling location. Water quality and heavy metal concentrations indicates that Lake Chini was not receives anthropogenic load from nearby activities.Keywords: Cabomba furcata, Heavy metal, Lake Chini, Waterquality
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 18881207 Effects of Silicon Oxide Filler Material and Fibre Orientation on Erosive Wear of GF/EP Composites
Authors: M. Bagci, H. Imrek, Omari M. Khalfan
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Materials added to the matrix help improving operating properties of a composite. This experimental study has targeted to investigate this aim where Silicon Oxide particles were added to glass fibre and epoxy resin at an amount of 15% to the main material to obtain a sort of new composite material. Erosive wear behavior of epoxy-resin dipped composite materials reinforced with glass fibre and Silicon Oxide under three different impingement angles (30°, 60° and 90°), three different impact velocities (23, 34 and 53 m/s), two different angular Aluminum abrasive particle sizes (approximately 200 and 400 μm) and the fibre orientation of 45° (45/-45) were investigated. In the test results, erosion rates were obtained as functions of impingement angles, impact velocities, particle sizes and fibre orientation. Moreover, materials with addition of Silicon Oxide filler material exhibited lower wear as compared to neat materials with no added filler material. In addition, SEM views showing worn out surfaces of the test specimens were scrutinized.
Keywords: Erosive wear, fibre orientation, GF/EP, silicon oxide.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 25161206 Low Power CNFET SRAM Design
Authors: Pejman Hosseiniun, Rose Shayeghi, Iman Rahbari, Mohamad Reza Kalhor
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CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices. In this paper, a new SRAM cell design based on CNFET technology is proposed. The proposed SRAM cell design for CNFET is compared with SRAM cell designs implemented with the conventional CMOS and FinFET in terms of speed, power consumption, stability, and leakage current. The HSPICE simulation and analysis show that the dynamic power consumption of the proposed 8T CNFET SRAM cell’s is reduced about 48% and the SNM is widened up to 56% compared to the conventional CMOS SRAM structure at the expense of 2% leakage power and 3% write delay increase.
Keywords: SRAM cell, CNFET, low power, HSPICE.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 26621205 Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate
Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato
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CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.
Keywords: CuAlO2, silicide, thin films, transparent conducting oxide, sol-gel.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 10851204 Formation of Protective Silicide-Aluminide Coating on Gamma-TiAl Advanced Material
Authors: S. Nouri
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In this study, the Si-aluminide coating was prepared on gamma-TiAl [Ti-45Al-2Nb-2Mn-1B (at. %)] via liquid-phase slurry procedure. The high temperature oxidation resistance of this diffusion coating was evaluated at 1100 °C for 400 hours. The results of the isothermal oxidation showed that the formation of Si-aluminide coating can remarkably improve the high temperature oxidation of bare gamma-TiAl alloy. The identification of oxide scale microstructure showed that the formation of protective Al2O3+SiO2 mixed oxide scale along with a continuous, compact and uniform layer of Ti5Si3 beneath the surface oxide scale can act as an oxygen diffusion barrier during the high temperature oxidation. The other possible mechanisms related to the formation of Si-aluminide coating and oxide scales were also discussed.
Keywords: Gamma-TiAl alloy, Si-aluminide coating, slurry procedure, high temperature oxidation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 6041203 Green Synthesized Iron Oxide Nanoparticles: A Nano-Nutrient for the Growth and Enhancement of Flax (Linum usitatissimum L.) Plant
Authors: G. Karunakaran, M. Jagathambal, N. Van Minh, E. Kolesnikov, A. Gusev, O. V. Zakharova, E. V. Scripnikova, E. D. Vishnyakova, D. Kuznetsov
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Iron oxide nanoparticles (Fe2O3NPs) are widely used in different applications due to its ecofriendly nature and biocompatibility. Hence, in this investigation, biosynthesized Fe2O3NPs influence on flax (Linum usitatissimum L.) plant was examined. The biosynthesized nanoparticles were found to be cubic phase which is confirmed by XRD analysis. FTIR analysis confirmed the presence of functional groups corresponding to the iron oxide nanoparticle. The elemental analysis also confirmed that the obtained nanoparticle is iron oxide nanoparticle. The scanning electron microscopy and the transmission electron microscopy confirm that the average particle size was around 56 nm. The effect of Fe2O3NPs on seed germination followed by biochemical analysis was carried out using standard methods. The results obtained after four days and 11 days of seed vigor studies showed that the seedling length (cm), average number of seedling with leaves, increase in root length (cm) was found to be enhanced on treatment with iron oxide nanoparticles when compared to control. A positive correlation was noticed with the dose of the nanoparticle and plant growth, which may be due to changes in metabolic activity. Hence, to evaluate the change in metabolic activity, peroxidase and catalase activities were estimated. It was clear from the observation that higher concentration of iron oxide nanoparticles (Fe2O3NPs 1000 mg/L) has enhanced peroxidase and catalase activities and in turn plant growth. Thus, this study clearly showed that biosynthesized iron oxide nanoparticles will be an effective nano-nutrient for agriculture applications.
Keywords: Catalase, fertilizer, iron oxide nanoparticles, Linum usitatissimum L., nano-nutrient, peroxidase.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16151202 Influence of Confined Acoustic Phonons on the Shubnikov – de Haas Magnetoresistance Oscillations in a Doped Semiconductor Superlattice
Authors: Pham Ngoc Thang, Le Thai Hung, Nguyen Quang Bau
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The influence of confined acoustic phonons on the Shubnikov – de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number m characterizing the effect of confined acoustic phonons. When m goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the GaAs:Si/GaAs:Be DSSL and compared with other studies. Results show that the Shubnikov – de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.
Keywords: Shubnikov–de Haas magnetoresistance oscillations, quantum kinetic equation, confined acoustic phonons, laser radiation, doped semiconductor superlattices.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 14161201 The Experience with SiC MOSFET and Buck Converter Snubber Design
Authors: P. Vaculik
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The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.
Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 55091200 A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal
Authors: S. Sadegzadeh, A. Mousavi
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Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa2Ca2Cu3O10 as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF2 as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF2)NInSb(Si/MgF2)N named S.I, and (Si/MgF2)NHgBa2Ca2Cu3O10(Si/MgF2)N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 11771199 Analysis and Design of Simultaneous Dual Band Harvesting System with Enhanced Efficiency
Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet
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This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce Vth of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.
Keywords: Energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16111198 Effect of Filler Metal Diameter on Weld Joint of Carbon Steel SA516 Gr 70 and Filler Metal SFA 5.17 in Submerged Arc Welding SAW
Authors: A. Nait Salah, M. Kaddami
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This work describes an investigation on the effect of filler metals diameter to weld joint, and low alloy carbon steel A516 Grade 70 is the base metal. Commercially SA516 Grade70 is frequently used for the manufacturing of pressure vessels, boilers and storage tank, etc. In fabrication industry, the hardness of the weld joint is between the important parameters to check, after heat treatment of the weld. Submerged arc welding (SAW) is used with two filler metal diameters, and this solid wire electrode is used for SAW non-alloy and for fine grain steels (SFA 5.17). The different diameters were selected (Ø = 2.4 mm and Ø = 4 mm) to weld two specimens. Both specimens were subjected to the same preparation conditions, heat treatment, macrograph, metallurgy micrograph, and micro-hardness test. Samples show almost similar structure with highest hardness. It is important to indicate that the thickness used in the base metal is 22 mm, and all specifications, preparation and controls were according to the ASME section IX. It was observed that two different filler metal diameters performed on two similar specimens demonstrated that the mechanical property (hardness) increases with decreasing diameter. It means that even the heat treatment has the same effect with the same conditions, the filler metal diameter insures a depth weld penetration and better homogenization. Hence, the SAW welding technique mentioned in the present study is favorable to implicate for the industry using the small filler metal diameter.
Keywords: ASME, base metal, filler metal, micro-hardness test, submerged arc welding.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 7981197 Combination Scheme of Affine Projection Algorithm Filters with Complementary Order
Authors: Young-Seok Choi
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This paper proposes a complementary combination scheme of affine projection algorithm (APA) filters with different order of input regressors. A convex combination provides an interesting way to keep the advantage of APA having different order of input regressors. Consequently, a novel APA which has the rapid convergence and the reduced steady-state error is derived. Experimental results show the good properties of the proposed algorithm.
Keywords: Adaptive filter, affine projection algorithm, convex combination, input order.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16191196 Selective Sulfidation of Copper, Zinc and Nickelin Plating Wastewater using Calcium Sulfide
Authors: K. Soya, N. Mihara, D. Kuchar, M. Kubota, H. Matsuda, T. Fukuta
Abstract:
The present work is concerned with sulfidation of Cu, Zn and Ni containing plating wastewater with CaS. The sulfidation experiments were carried out at a room temperature by adding solid CaS to simulated metal solution containing either single-metal of Ni, Zn and Cu, or Ni-Zn-Cu mixture. At first, the experiments were conducted without pH adjustment and it was found that the complete sulfidation of Zn and Ni was achieved at an equimolar ratio of CaS to a particular metal. However, in the case of Cu, a complete copper sulfidation was achieved at CaS to Cu molar ratio of about 2. In the case of the selective sulfidation, a simulated plating solution containing Cu, Zn and Ni at the concentration of 100 mg/dm3 was treated with CaS under various pH conditions. As a result, selective precipitation of metal sulfides was achieved by a sulfidation treatment at different pH values. Further, the precipitation agents of NaOH, Na2S and CaS were compared in terms of the average specific filtration resistance and compressibility coefficients of metal sulfide slurry. Consequently, based on the lowest filtration parameters of the produced metal sulfides, it was concluded that CaS was the most effective precipitation agent for separation and recovery of Cu, Zn and Ni.Keywords: Calcium sulfide, Plating Wastewater, Filtrationcharacteristics, Heavy metals, Sulfidation.
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