Search results for: CMOS analog to digital converter
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1351

Search results for: CMOS analog to digital converter

1321 Real-Time Digital Oscilloscope Implementation in 90nm CMOS Technology FPGA

Authors: Nasir Mehmood, Jens Ogniewski, Vinodh Ravinath

Abstract:

This paper describes the design of a real-time audiorange digital oscilloscope and its implementation in 90nm CMOS FPGA platform. The design consists of sample and hold circuits, A/D conversion, audio and video processing, on-chip RAM, clock generation and control logic. The design of internal blocks and modules in 90nm devices in an FPGA is elaborated. Also the key features and their implementation algorithms are presented. Finally, the timing waveforms and simulation results are put forward.

Keywords: CMOS, VLSI, Oscilloscope, Field Programmable Gate Array (FPGA), VHDL, Video Graphics Array (VGA)

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1320 Design and Analysis of Low-Power, High Speed and Area Efficient 2-Bit Digital Magnitude Comparator in 90nm CMOS Technology Using Gate Diffusion Input

Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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1319 A Digital Pulse-Width Modulation Controller for High-Temperature DC-DC Power Conversion Application

Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

Abstract:

This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation.

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1318 Effect of Peak-to-Average Power Ratio Reduction on the Multicarrier Communication System Performance Parameters

Authors: Sanjay Singh, M Sathish Kumar, H. S Mruthyunjaya

Abstract:

Multicarrier transmission system such as Orthogonal Frequency Division Multiplexing (OFDM) is a promising technique for high bit rate transmission in wireless communication system. OFDM is a spectrally efficient modulation technique that can achieve high speed data transmission over multipath fading channels without the need for powerful equalization techniques. However the price paid for this high spectral efficiency and less intensive equalization is low power efficiency. OFDM signals are very sensitive to nonlinear effects due to the high Peak-to-Average Power Ratio (PAPR), which leads to the power inefficiency in the RF section of the transmitter. This paper investigates the effect of PAPR reduction on the performance parameter of multicarrier communication system. Performance parameters considered are power consumption of Power Amplifier (PA) and Digital-to-Analog Converter (DAC), power amplifier efficiency, SNR of DAC and BER performance of the system. From our analysis it is found that irrespective of PAPR reduction technique being employed, the power consumption of PA and DAC reduces and power amplifier efficiency increases due to reduction in PAPR. Moreover, it has been shown that for a given BER performance the requirement of Input-Backoff (IBO) reduces with reduction in PAPR.

Keywords: BER, Crest Factor (CF), Digital-to-Analog Converter(DAC), Input-Backoff (IBO), Orthogonal Frequency Division Multiplexing(OFDM), Peak-to-Average Power Ratio (PAPR), PowerAmplifier efficiency, SNR

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1317 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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1316 High-Efficiency Comparator for Low-Power Application

Authors: M. Yousefi, N. Nasirzadeh

Abstract:

In this paper, dynamic comparator structure employing two methods for power consumption reduction with applications in low-power high-speed analog-to-digital converters have been presented. The proposed comparator has low consumption thanks to power reduction methods. They have the ability for offset adjustment. The comparator consumes 14.3 μW at 100 MHz which is equal to 11.8 fJ. The comparator has been designed and simulated in 180 nm CMOS. Layouts occupy 210 μm2.

Keywords: Comparator, low, power, efficiency.

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1315 A Novel Digital Calibration Technique for Gain and Offset Mismatch in TIΣΔ ADCs

Authors: Ali Beydoun, Van-Tam Nguyen, Patrick Loumeau

Abstract:

Time interleaved sigma-delta (TIΣΔ) architecture is a potential candidate for high bandwidth analog to digital converters (ADC) which remains a bottleneck for software and cognitive radio receivers. However, the performance of the TIΣΔ architecture is limited by the unavoidable gain and offset mismatches resulting from the manufacturing process. This paper presents a novel digital calibration method to compensate the gain and offset mismatch effect. The proposed method takes advantage of the reconstruction digital signal processing on each channel and requires only few logic components for implementation. The run time calibration is estimated to 10 and 15 clock cycles for offset cancellation and gain mismatch calibration respectively.

Keywords: sigma-delta, calibration, gain and offset mismatches, analog-to-digital conversion, time-interleaving.

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1314 A 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology

Authors: Siavash Heydarzadeh, Massoud Dousti

Abstract:

A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.

Keywords: CMOS active inductor , 0.18um CMOS technology , ADS

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1313 Modeling, Analysis and Simulation of 4-Phase Boost Converter

Authors: Nagulapati Kiran, V. Rangavalli, B. Vanajakshi

Abstract:

This paper designs the four-phase Boost Converter which overcomes the problem of high input ripple current and output ripple voltage. Digital control is more convenient for such a topology on basis of synchronization, phase shift operation, etc. Simulation results are presented for open-loop and closed-loop for four phase boost converter. This control scheme is applicable for PFC rectifiers as well. Thus a comparative analysis based on the obtained results is performed.

Keywords: Boost Converter, Bode plot, PI Controller, Four phase.

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1312 A Programmable FSK-Modulator in 350nm CMOS Technology

Authors: Nasir Mehmood, Saad Rahman, Vinodh Ravinath, Mahesh Balaji

Abstract:

This paper describes the design of a programmable FSK-modulator based on VCO and its implementation in 0.35m CMOS process. The circuit is used to transmit digital data at 100Kbps rate in the frequency range of 400-600MHz. The design and operation of the modulator is discussed briefly. Further the characteristics of PLL, frequency synthesizer, VCO and the whole design are elaborated. The variation among the proposed and tested specifications is presented. Finally, the layout of sub-modules, pin configurations, final chip and test results are presented.

Keywords: FSK Modulator, CMOS, VCO, Phase Locked Loop, Frequency Synthesizer.

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1311 Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits

Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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1310 Adaptive Car Safety System

Authors: Shahram Jafari, Mohammad-Ali Nikouei Mahani, Mohammad Arabnezhad, Mahdi Sharifi

Abstract:

Car accident is one of the major causes of death in many countries. Many researchers have attempted to design and develop techniques to increase car safety in the past recent years. In spite of all the efforts, it is still challenging to design a system adaptive to the driver rather than the automotive characteristics. In this paper, the adaptive car safety system is explained which attempts to find a balance.

Keywords: Analog to Digital Converter (ADC), AdaptiveCar Safety System, Multi-Media Card (MMC).

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1309 High Speed and Ultra Low-voltage CMOS NAND and NOR Domino Gates

Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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1308 Design and Control of DC-DC Converter for the Military Application Fuel Cell

Authors: Tae-Yeong Lee, Eun-Ju Yoo, Won-Yeong Choi, Young-Woo Park

Abstract:

This paper presents a 24 watts SEPIC converter design and control using microprocessor. SEPIC converter has advantages of a wide input range and miniaturization caused by the low stress at elements. There is also an advantage that the input and output are isolated in MOSFET-off state. This paper presents the PID control through the SEPIC converter transfer function using a DSP and the protective circuit for fuel cell from the over-current and inverse-voltage by using the characteristic of SEPIC converter. Then it derives them through the experiments.

Keywords: DC-DC Converter, Fuel-Cell, Microprocessor Control, Military Converter, SEPIC Converter

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1307 High Dynamic Range Resampling for Software Radio

Authors: Arthur David Snider, Laiq Azam

Abstract:

The classic problem of recovering arbitrary values of a band-limited signal from its samples has an added complication in software radio applications; namely, the resampling calculations inevitably fold aliases of the analog signal back into the original bandwidth. The phenomenon is quantified by the spur-free dynamic range. We demonstrate how a novel application of the Remez (Parks- McClellan) algorithm permits optimal signal recovery and SFDR, far surpassing state-of-the-art resamplers.

Keywords: Sampling methods, Signal sampling, Digital radio, Digital-analog conversion.

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1306 Experimental Study of Boost Converter Based PV Energy System

Authors: T. Abdelkrim, K. Ben seddik, B. Bezza, K. Benamrane, Aeh. Benkhelifa

Abstract:

This paper proposes an implementation of boost converter for a resistive load using photovoltaic energy as a source. The model of photovoltaic cell and operating principle of boost converter are presented. A PIC microcontroller is used in the close loop control to generate pulses for controlling the converter circuit. To performance evaluation of boost converter, a variation of output voltage of PV panel is done by shading one and two cells.

Keywords: Boost converter, Microcontroller, Photovoltaic power generation, Shading cells.

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1305 Nuclear Medical Image Treatment System Based On FPGA in Real Time

Authors: B. Mahmoud, M.H. Bedoui, R. Raychev, H. Essabbah

Abstract:

We present in this paper an acquisition and treatment system designed for semi-analog Gamma-camera. It consists of a nuclear medical Image Acquisition, Treatment and Display chain(IATD) ensuring the acquisition, the treatment of the signals(resulting from the Gamma-camera detection head) and the scintigraphic image construction in real time. This chain is composed by an analog treatment board and a digital treatment board. We describe the designed systems and the digital treatment algorithms in which we have improved the performance and the flexibility. The digital treatment algorithms are implemented in a specific reprogrammable circuit FPGA (Field Programmable Gate Array).interface for semi-analog cameras of Sopha Medical Vision(SMVi) by taking as example SOPHY DS7. The developed system consists of an Image Acquisition, Treatment and Display (IATD) ensuring the acquisition and the treatment of the signals resulting from the DH. The developed chain is formed by a treatment analog board and a digital treatment board designed around a DSP [2]. In this paper we have presented the architecture of a new version of our chain IATD in which the integration of the treatment algorithms is executed on an FPGA (Field Programmable Gate Array)

Keywords: Nuclear medical image, scintigraphic image, digitaltreatment, linearity, spectrometry, FPGA.

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1304 Design and Analysis of a Low Power High Speed 1 Bit Full Adder Cell Based On TSPC Logic with Multi-Threshold CMOS

Authors: Ankit Mitra

Abstract:

An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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1303 Mathematical Modelling of Single Phase Unity Power Factor Boost Converter

Authors: Sanjay L. Kurkute, Pradeep M. Patil, Kakasaheb C. Mohite

Abstract:

An optimal control strategy based on simple model, a single phase unity power factor boost converter is presented with an evaluation of first order differential equations. This paper presents an evaluation of single phase boost converter having power factor correction. The simple discrete model of boost converter is formed and optimal control is obtained, digital PI is adopted to adjust control error. The method of instantaneous current control is proposed in this paper for its good tracking performance of dynamic response. The simulation and experimental results verified our design.

Keywords: Single phase, boost converter, Power factor correction (PFC), Pulse Width Modulation (PWM).

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1302 A Fault-Tolerant Full Adder in Double Pass CMOS Transistor

Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: Semiconductors, digital electronics, double pass transistor technology, Full adder, fault tolerance.

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1301 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), and ion sensor electronics.

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1300 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand, Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 Rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), ion sensor electronics.

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1299 A Very High Speed, High Resolution Current Comparator Design

Authors: Neeraj K. Chasta

Abstract:

This paper presents an idea for analog current comparison which compares input signal and reference currents with high speed and accuracy. Proposed circuit utilizes amplification properties of common gate configuration, where voltage variations of input current are amplified and a compared output voltage is developed. Cascaded inverter stages are used to generate final CMOS compatible output voltage. Power consumption of circuit can be controlled by the applied gate bias voltage. The comparator is designed and studied at 180nm CMOS process technology for a supply voltage of 3V.

Keywords: Current Mode, Comparator, High Resolution, High Speed.

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1298 A Single Switch High Step-Up DC/DC Converter with Zero Current Switching Condition

Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani

Abstract:

This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.

Keywords: Coupled inductors, high step-up DC/DC converter, zero-current switching, cuk converter, sepic converter.

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1297 ZVZCT PWM Boost DC-DC Converter

Authors: İsmail Aksoy, Hacı Bodur, Nihan Altıntas

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: Active snubber cell, boost converter, zero current switching, zero voltage switching.

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1296 A Parallel Implementation of the Reverse Converter for the Moduli Set {2n, 2n–1, 2n–1–1}

Authors: Mehdi Hosseinzadeh, Amir Sabbagh Molahosseini, Keivan Navi

Abstract:

In this paper, a new reverse converter for the moduli set {2n, 2n–1, 2n–1–1} is presented. We improved a previously introduced conversion algorithm for deriving an efficient hardware design for reverse converter. Hardware architecture of the proposed converter is based on carry-save adders and regular binary adders, without the requirement for modular adders. The presented design is faster than the latest introduced reverse converter for moduli set {2n, 2n–1, 2n–1–1}. Also, it has better performance than the reverse converters for the recently introduced moduli set {2n+1–1, 2n, 2n–1}

Keywords: Residue arithmetic, Residue number system, Residue-to-Binary converter, Reverse converter

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1295 Non-Isolated Direct AC-DC Converter Design with BCM-PFC Circuit

Authors: Y. Kobori, L. Xing, H. Gao, N.Onozawa, S. Wu, S. N. Mohyar, Z. Nosker, H. Kobayashi, N. Takai, K. Niitsu

Abstract:

This paper proposes two types of non-isolated direct AC-DC converters. First, it shows a buck-boost converter with an H-bridge, which requires few components (three switches, two diodes, one inductor and one capacitor) to convert AC input to DC output directly. This circuit can handle a wide range of output voltage. Second, a direct AC-DC buck converter is proposed for lower output voltage applications. This circuit is analyzed with output voltage of 12V. We describe circuit topologies, operation principles and simulation results for both circuits.

Keywords: AC-DC converter, Buck-boost converter, Buck converter, PFC, BCM PFC circuit.

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1294 X-Ray Intensity Measurement Using Frequency Output Sensor for Computed Tomography

Authors: R. M. Siddiqui, D. Z. Moghaddam, T. R. Turlapati, S. H. Khan, I. Ul Ahad

Abstract:

Quality of 2D and 3D cross-sectional images produce by Computed Tomography primarily depend upon the degree of precision of primary and secondary X-Ray intensity detection. Traditional method of primary intensity detection is apt to errors. Recently the X-Ray intensity measurement system along with smart X-Ray sensors is developed by our group which is able to detect primary X-Ray intensity unerringly. In this study a new smart X-Ray sensor is developed using Light-to-Frequency converter TSL230 from Texas Instruments which has numerous advantages in terms of noiseless data acquisition and transmission. TSL230 construction is based on a silicon photodiode which converts incoming X-Ray radiation into the proportional current signal. A current to frequency converter is attached to this photodiode on a single monolithic CMOS integrated circuit which provides proportional frequency count to incoming current signal in the form of the pulse train. The frequency count is delivered to the center of PICDEM FS USB board with PIC18F4550 microcontroller mounted on it. With highly compact electronic hardware, this Demo Board efficiently read the smart sensor output data. The frequency output approaches overcome nonlinear behavior of sensors with analog output thus un-attenuated X-Ray intensities could be measured precisely and better normalization could be acquired in order to attain high resolution.

Keywords: Computed tomography, detector technology, X-Ray intensity measurement

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1293 Algorithm Design and Performance Evaluation of Equivalent CMOS Model

Authors: Parvinder S. Sandhu, Iqbaldeep Kaur, Amit Verma, Inderpreet Kaur, Birinderjit S. Kalyan

Abstract:

This work is a proposed model of CMOS for which the algorithm has been created and then the performance evaluation of this proposition has been done. In this context, another commonly used model called ZSTT (Zero Switching Time Transient) model is chosen to compare all the vital features and the results for the Proposed Equivalent CMOS are promising. In the end, the excerpts of the created algorithm are also included

Keywords: Dual Capacitor Model, ZSTT, CMOS, SPICEMacro-Model.

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1292 Current Controlled Current Conveyor (CCCII)and Application using 65nm CMOS Technology

Authors: Zia Abbas, Giuseppe Scotti, Mauro Olivieri

Abstract:

Current mode circuits like current conveyors are getting significant attention in current analog ICs design due to their higher band-width, greater linearity, larger dynamic range, simpler circuitry, lower power consumption and less chip area. The second generation current controlled conveyor (CCCII) has the advantage of electronic adjustability over the CCII i.e. in CCCII; adjustment of the X-terminal intrinsic resistance via a bias current is possible. The presented approach is based on the CMOS implementation of second generation positive (CCCII+), negative (CCCII-) and dual Output Current Controlled Conveyor (DOCCCII) and its application as Universal filter. All the circuits have been designed and simulated using 65nm CMOS technology model parameters on Cadence Virtuoso / Spectre using 1V supply voltage. Various simulations have been carried out to verify the linearity between output and input ports, range of operation frequency, etc. The outcomes show good agreement between expected and experimental results.

Keywords: CCCII+, CCCII-, DOCCCII, Electronic tunability, Universal filter

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