Search results for: wide band gap semiconductor.

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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Authors: Morteza Fathipour, Seyed Nasrolah Anousheh, Kaveh Ghiafeh Davoudi, Vala Fathipour

Abstract:

A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device.

Keywords: Band X, Gallium-Arsenide, Mixed mode, PCSS, Photoconductivity.

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Authors: Srilaxmi Gangula, MahaLakshmi Vinukonda, Neeraj Rao

Abstract:

A wide band polarization insensitive metamaterial absorber with bandwidth enhancement in X and C band is proposed. The structure proposed here consists of a periodic unit cell of resonator arrangements in double layer. The proposed structure shows near unity absorption at frequencies of 6.21 GHz and 10.372 GHz spreading over a bandwidth of 1 GHz and 6.21 GHz respectively in X and C bands. The proposed metamaterial absorber is designed so as to increase the bandwidth. The proposed structure is also independent for TE and TM polarization. Because of its simple implementation, near unity absorption and wide bandwidth this dual band polarization insensitive metamaterial absorber can be used for EMI/EMC applications.

Keywords: Absorber, C-band, meta material, multilayer, X-band.

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Authors: Banaz Omer Rasheed, Parexan M. Aljaff

Abstract:

In this paper, a wide band gain–flattened discrete Raman amplifiers utilizing four optimum pump wavelengths is demonstrated.

Keywords: Fiber Raman Amplifiers, Optimization, WaveLength Division Multiplexing.

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Authors: Moustafa Ahmed, Ahmed Bakry, Fumio Koyama

Abstract:

We report on the use of strong external optical feedback to enhance the modulation response of semiconductor lasers over a frequency passband around modulation frequencies higher than 60 GHz. We show that this modulation enhancement is a type of photon-photon resonance (PPR) of oscillating modes in the external cavity formed between the laser and the external reflector. The study is based on a time-delay rate equation model that takes into account both the strong feedback and multiple reflections in the external cavity. We examine the harmonic and intermodulation distortions associated with single and two-tone modulations in the mm-wave band of the resonant modulation. We show that compared with solitary lasers modulated around the carrier-photon resonance frequency, the present mm-wave modulated signal has lower distortions.

Keywords: Distortion, intensity modulation, optical feedback, semiconductor laser.

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Authors: R. Irani, A. Ghavidel, F. Hodjat Kashani

Abstract:

Recently, several designs of single fed circularly polarized microstrip antennas have been studied. Relatively, a few designs for achieving circular polarization using triangular microstrip antenna are available. Typically existing design of single fed circularly polarized triangular microstrip antennas include the use of equilateral triangular patch with a slit or a horizontal slot on the patch or addition a narrow band stub on the edge or a vertex of triangular patch. In other word, with using a narrow band tune stub on middle of an edge of triangle causes of facility to compensate the possible fabrication error and substrate materials with easier adjusting the tuner stub length. Even though disadvantages of this method is very long of stub (approximate 1/3 length of triangle edge). In this paper, instead of narrow band stub, a wide band stub has been applied, therefore the length of stub by this method has been decreased around 1/10 edge of triangle in addition changing the aperture angle of stub, provides more facility for designing and producing circular polarization wave.

Keywords: Circular polarization, Microstrip antenna, single feed, wide band stub.

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Authors: Jonghoon Kim, Gilwon Yoon

Abstract:

A wrist-band type biosignal measurement system and its data transfer through human body communication (HBC) were investigated. An HBC method based on pulses of ultra-wide band instead of using frequency or amplitude modulations was studied and implemented since the system became very compact and it was more suited for personal or mobile health monitoring. Our system measured photo-plethysmogram (PPG) and measured PPG signals were transmitted through a finger to a monitoring PC system. The device was compact and low-power consuming. HBC communication has very strongsecurity measures since it does not use wireless network.Furthermore, biosignal monitoring system becomes handy because it does not need to have wire connections.

Keywords: Biosignal, human body communication, mobile health, PPG, ultrawide band.

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Authors: Sudhina H. K, Ravi M. Yadahalli, N. M. Shetti

Abstract:

Reconfigurable antennas represent a recent innovation in antenna design that changes from classical fixed-form, fixed function antennas to modifiable structures that can be adapted to fit the requirements of a time varying system.

The ability to control the operating band of an antenna system can have many useful applications. Systems that operate in an acquire-and-track configuration would see a benefit from active bandwidth control. In such systems a wide band search mode is first employed to find a desired signal then a narrow band track mode is used to follow only that signal. Utilizing active antenna bandwidth control, a single antenna would function for both the wide band and narrow band configurations providing the rejection of unwanted signals with the antenna hardware. This ability to move a portion of the RF filtering out of the receiver and onto the antenna itself will also aid in reducing the complexity of the often expensive RF processing subsystems.

Keywords: Designing methods, MEMS, stack, reconfigurable elements.

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Authors: Bilel Gassara, Mahmoud Abdellaoui, Nouri Masmoud

Abstract:

The 4G front-end transceiver needs a high performance which can be obtained mainly with an optimal architecture and a multi-band Local Oscillator. In this study, we proposed and presented a new architecture of multi-band frequency synthesizer based on an Inverse Sine Phase Detector Phase Locked Loop (ISPD PLL) without any filters and any controlled gain block and associated with adapted multi band LC tuned VCO using a several numeric controlled capacitive branches but not binary weighted. The proposed architecture, based on 0.35μm CMOS process technology, supporting Multi-band GSM/DCS/DECT/ UMTS/WiMax application and gives a good performances: a phase noise @1MHz -127dBc and a Factor Of Merit (FOM) @ 1MHz - 186dB and a wide band frequency range (from 0.83GHz to 3.5GHz), that make the proposed architecture amenable for monolithic integration and 4G multi-band application.

Keywords: GSM/DCS/DECT/UMTS/WiMax, ISPD PLL, keep and capture range, Multi-Band, Synthesizer, Wireless.

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Authors: Morteza Amirabadi, Vahid Fayaz , Fereshteh Felegary, Hossien Hossienkhani

Abstract:

The most suitable Semiconductor detector, Cadmium Zinc Teloraid , has unique properties because of high Atomic number and wide Brand Gap . It has been tried in this project with different processes such as Lead , Diffusion , Produce and Recombination , effect of Trapping and injection carrier of CdZnTe , to get hole and then present a complete answer of it . Then we should investigate the movement of carrier ( Electron – Hole ) by using above answer.

Keywords: Semiconcuctor detector, Trapping, Recommbination, Diffusion

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Authors: T. Abdallah, K. Easawi, A. Khalid, S. Negm, H. Talaat

Abstract:

Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0 to 1) have been prepared using the chemical solution deposition technique. The energy band gap of these alloyed nanocrystals of approximately the same size, have been determined by scanning tunneling spectroscopy (STS) technique at room temperature. The values of the energy band gap obtained directly using STS are compared to those measured by optical spectroscopy. Increasing the molar fraction ratio x from 0 to 1 causes clearly observed increase in the band gap of the alloyed composite nanocrystal. Vegard-s law was applied to calculate the parameters of the effective mass approximation (EMA) model and the dimension obtained were compared to the values measured by STM. The good agreement of the calculated and measured values is a direct result of applying Vegard's law in the nanocomposites.

Keywords: Alloy semiconductor nanocrystals, STM.

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Authors: Arnab Majumdar, Srimani Sen

Abstract:

In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p⁺pnn⁺ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×10⁸ A/m². The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×10⁸ A/m².

Keywords: Cubic ZnB-GaN, hexagonal 4H-SiC, Double drift impatt diode, millimeter wave, optimized bias current density, wide band gap semiconductor.

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Authors: M. Challal, F. Labu, M. Dehmas, A. Azrar

Abstract:

In this paper, three types of defected ground structure (DGS) units which are triangular-head (TH), rectangular-head (RH) and U-shape (US) are investigated. They are further used to low-pass and band-pass filters designs (LPF and BPF) and the obtained performances are examined. The LPF employing RH-DGS geometry presents the advantages of compact size, low-insertion loss and wide stopband compared to the other filters. It provides cutoff frequency of 2.5 GHz, largest rejection band width of 20 dB from 2.98 to 8.76 GHz, smallest transition region and smallest sharpness of the cutoff frequency. The BPF based on RH-DGS has the highest bandwidth (BW) of about 0.74 GHz and the lowest center frequency of 3.24 GHz, whereas the other BPFs have BWs less than 0.7 GHz.

Keywords: Defected ground structure (DGS), triangular-head(TH) DGS, rectangular-head (RH) DGS, U-shape (US) DGS, lowpassfilter (LPF) and band-pass filter (BPF).

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Authors: C. Elavarasi, T. Shanmuganantham

Abstract:

A coplanar waveguide (CPW) feed is presented, and comprising a split ring resonator (SRR) loaded fractal with water lily shape is used for multi band applications. The impedance matching of the antenna is determined by the number of Koch curve fractal unit cells. The antenna is designed on a FR4 substrate with a permittivity of ε_{r =} 4.4 and size of 14 x 16 x 1.6 mm³ to generate multi resonant mode at 3.8 GHz covering S band, 8.68 GHz at X band, 13.96 GHz at Ku band, and 19.74 GHz at K band with reflection coefficient better than -10 dB. Simulation results show that the antenna exhibits the desired voltage standing wave ratio (VSWR) level and radiation patterns across the wide frequency range. The fundamental parameters of the antenna such as return loss, VSWR, good radiation pattern with reasonable gain across the operating bands are obtained.

Keywords: Monopole antenna, fractal, metamaterial, waterlily shape, split ring resonator, multiband.

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Authors: Kirti Vyas, P. K. Singhal

Abstract:

This paper presents a novel CPW fed patch antenna supporting a wide band from 2.7 GHz – 6.5 GHz. The antenna is compact with size 32 x 30 x 1.6mm³, built over FR4-epoxy substrate (ε_r=4.4). Bandwidth enhancement has been achieved by using the concept of modified ground structure (MGS). For this purpose structural design has been optimized by parametric simulations in CST MWS. The proposed antenna can perform well in variety of wireless communication services including 5.15 GHz- 5.35 GHz and 5.725 GHz- 5.825 GHz WLAN IEEE 802.11 g/a, 5.2/ 5.5/ 5.8 GHz Wi-Fi, 3.5/5.5 GHz WiMax applications  and 3.7 - 4.2 GHz C band satellite communications bands. The measured experimental results show that bandwidth (S₁₁ < -10 dB) of antenna is 3.8 GHz. The performance of antenna is studied in terms of reflection coefficient, radiation characteristics, current distribution and gain.

Keywords: Broad band antenna, Compact, CPW fed, WLAN, Wi-Fi, Wi-Max, CST MWS.

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Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.

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Authors: S. Sadegzadeh, A. Mousavi

Abstract:

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa₂Ca₂Cu₃O₁₀ as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF₂ as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF₂)^NInSb(Si/MgF₂)^N named S.I, and (Si/MgF₂)^NHgBa₂Ca₂Cu₃O₁₀(Si/MgF₂)^N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.

Keywords: Defect modes, photonic crystals, semiconductor, superconductor, transmission.

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Authors: Zulfajri Basri Hasanuddin

Abstract:

There is an increasing demand for broadband services in Indonesia. Therefore, the answer is the use of Ka-Band which has some advantages such as wider bandwidth, the higher transmission speeds, and smaller size of antenna in the ground. However, rain attenuation is the primary factor in the degradation of signal at the Kaband. In this paper, the author will determine whether the Ka-band frequency can be implemented in Indonesia which has high intensity of rainfall.

Keywords: Ka-Band, Link Budget, Link Availability, BER, Eb/No, C/N.

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Authors: Zi-Gui Huang, Tsung-Tsong Wu

Abstract:

Large full frequency band gaps of surface and bulk acoustic waves in two-dimensional phononic band structures with hollow cylinders are addressed in this paper. It is well-known that absolute frequency band gaps are difficultly obtained in a band structure consisted of low-acoustic-impedance cylinders in high-acoustic-impedance host materials such as PMMA/Ni band structures. Phononic band structures with hollow cylinders are analyzed and discussed to obtain large full frequency band gaps not only for bulk modes but also for surface modes. The tendency of absolute frequency band gaps of surface and bulk acoustic waves is also addressed by changing the inner radius of hollow cylinders in this paper. The technique and this kind of band structure are useful for tuning the frequency band gaps and the design of acoustic waveguides.

Keywords: Phononic crystals, Band gap, SAW, BAW.

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Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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Authors: Penghui Zhang, Hua Zhang, Jun-Bo Wang, Cheng Zeng, Zijian Cao

Abstract:

With the development of software-defined networks and programmable data planes, in-band network telemetry (INT) has become an emerging technology in communications because it can get accurate and real-time network information. However, due to the expansion of the network scale, existing telemetry systems, to the best of the authors’ knowledge, have difficulty in meeting the common requirements of low overhead, low latency and full coverage for traffic measurement. This paper proposes a network-wide telemetry system with a low-latency low-overhead path planning (INT-LLPP). This paper builds a mathematical model to analyze the telemetry overhead and latency of INT systems. Then, we adopt a greedy-based path planning algorithm to reduce the overhead and latency of the network telemetry with the full network coverage. The simulation results show that network-wide telemetry is achieved and the telemetry overhead can be reduced significantly compared with existing INT systems. INT-LLPP can control the system latency to get real-time network information.

Keywords: Network telemetry, network monitoring, path planning, low latency.

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Authors: Abdelheq Boukarkar, Omar Guermoua

Abstract:

In this paper, we propose a miniaturized and wideband patch antenna for C-band applications. The antenna miniaturization is obtained by loading shorting vias along one patch edge. At the same time, the wideband performance is achieved by combining two resonances using one feed line. The measured results reveal that the antenna covers the frequency band 4.32 GHz to 6.52 GHz (41%) with a peak gain and a peak efficiency of 5.5 dBi and 87%, respectively. The antenna occupies a relatively small size of only 26 x 22 x 5.6 mm³, making it suitable for compact wireless devices requiring a stable unidirectional gain over a wide frequency range.

Keywords: Miniaturized antennas, patch antennas, stable gain, wideband antennas.

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Authors: Muhammad Akmal Chaudhary

Abstract:

The out-of-band impedance environment is considered to be of paramount importance in engineering the in-band impedance environment. Presenting the frequency independent and constant outof- band impedances across the wide modulation bandwidth is extremely important for reliable device characterization for future wireless systems. This paper presents an out-of-band impedance optimization scheme based on simultaneous engineering of significant baseband components IF1 (twice the modulation frequency) and IF2 (four times the modulation frequency) and higher baseband components such as IF3 (six times the modulation frequency) and IF4 (eight times the modulation frequency) to engineer the in-band impedance environment. The investigations were carried out on a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40.5dBm under modulated excitation. The presentation of frequency independent baseband impedances to all the significant baseband components whilst maintaining the optimum termination for fundamental tones as well as reactive termination for 2nd harmonic under class-J mode of operation has outlined separate optimum impedances for best intermodulation (IM) linearity.

Keywords: Active load-pull, baseband, device characterisation, waveform measurements.

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Authors: S. Bourennane, A. Bendjama

Abstract:

This paper deals with the localization of the wideband sources. We develop a new approach for estimating the wide band sources parameters. This method is based on the high order statistics of the recorded data in order to eliminate the Gaussian components from the signals received on the various hydrophones.In fact the noise of sea bottom is regarded as being Gaussian. Thanks to the coherent signal subspace algorithm based on the cumulant matrix of the received data instead of the cross-spectral matrix the wideband correlated sources are perfectly located in the very noisy environment. We demonstrate the performance of the proposed algorithm on the real data recorded during an underwater acoustics experiments.

Keywords: Higher-order statistics, high resolution array processing techniques, localization of acoustics sources, wide band sources.

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Authors: K. Melouk, M. Dellakrachai

Abstract:

Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.

Keywords: Laser, quantum well, semiconductor, InGaAsP.

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Authors: R. Kiruthika, T. Shanmuganantham

Abstract:

A shaped single feed microstrip antenna is realized for C-Band and X-Band applications. The frequency range of C-band and X-band varies from 4 to 8 Gigahertz and 8 to 12 Gigahertz. The antenna operates under three frequency bands, one under C band and two under X-band applications. Defect on the ground called DGS (Defected Ground Structure) is made to enhance the distinctiveness of the antenna parameters. The design consists of DGS provided to improve the antenna performance. The substrate material used is of the Flame Retardant grade-4 (FR4) epoxy having high mechanical and electrical strength. The design and analysis was done using the FEM (Finite Element Method) based Ansoft HFSS (High Frequency Structural Simulator) Version 12. For the resonant frequencies of 5.21, 9.17 and 10.45, a value of reflection coefficient obtained is of -39.0, -16.0 and -30.7 dB respectively. Other constraints of antenna such as bandwidth, gain, directivity and Voltage Standing Wave Ratio (VSWR) are also conferred.

Keywords: Flame retardant-4 epoxy, finite element method, return loss, directivity.

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Authors: R. M. López-Gutiérrez, L. Cardoza-Avendaño, H. Cervantes-De Ávila, J. A. Michel-Macarty, C. Cruz-Hernández, A. Arellano-Delgado, R. Carmona-Rodríguez

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In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topology. Nodes of these networks are modeled for the laser and simulate by Matlab. These results are applicable to private communication.

Keywords: Synchronization, chaotic laser, network.

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Authors: K. Derradji Belloum, A. Moussi

Abstract:

Most high-performance ac drives utilize a current controller. The controller switches a voltage source inverter (VSI) such that the motor current follows a set of reference current waveforms. Fixed-band hysteresis (FBH) current control has been widely used for the PWM inverter. We want to apply the same controller for the PWM AC chopper. The aims of the controller is to optimize the harmonic content at both input and output sides, while maintaining acceptable losses in the ac chopper and to control in wide range the fundamental output voltage. Fixed band controller has been simulated and analyzed for a single-phase AC chopper and are easily extended to three-phase systems. Simulation confirmed the advantages and the excellent performance of the modulation method applied for the AC chopper.

Keywords: AC chopper, Current controller, Distortion factor, Hysteresis, Input Power Factor, PWM.

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Authors: Sae-Rom Pak, Seung Hwan Park, Jeong Ho Cho, Daewoong An, Cheong-Sool Park, Jun Seok Kim, Jun-Geol Baek

Abstract:

It is important to predict yield in semiconductor test process in order to increase yield. In this study, yield prediction means finding out defective die, wafer or lot effectively. Semiconductor test process consists of some test steps and each test includes various test items. In other world, test data has a big and complicated characteristic. It also is disproportionably distributed as the number of data belonging to FAIL class is extremely low. For yield prediction, general data mining techniques have a limitation without any data preprocessing due to eigen properties of test data. Therefore, this study proposes an under-sampling method using support vector machine (SVM) to eliminate an imbalanced characteristic. For evaluating a performance, randomly under-sampling method is compared with the proposed method using actual semiconductor test data. As a result, sampling method using SVM is effective in generating robust model for yield prediction.

Keywords: Yield Prediction, Semiconductor Test Process, Support Vector Machine, Under Sampling

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Authors: Ki-Young Kim, Jae-Ho Lim, Deok-Min Kim, Seok-Yoon Kim

Abstract:

Average current analysis checking the impact of current flow is very important to guarantee the reliability of semiconductor systems. As semiconductor process technologies improve, the coupling capacitance often become bigger than self capacitances. In this paper, we propose an analytic technique for analyzing average current on interconnects in multi-conductor structures. The proposed technique has shown to yield the acceptable errors compared to HSPICE results while providing computational efficiency.

Keywords: current moment, interconnect modeling, reliability analysis, worst-case switching

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