Search results for: quantum capacitance.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 228

Search results for: quantum capacitance.

228 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors

Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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227 Low Value Capacitance Measurement System with Adjustable Lead Capacitance Compensation

Authors: Gautam Sarkar, Anjan Rakshit, Amitava Chatterjee, Kesab Bhattacharya

Abstract:

The present paper describes the development of a low cost, highly accurate low capacitance measurement system that can be used over a range of 0 – 400 pF with a resolution of 1 pF. The range of capacitance may be easily altered by a simple resistance or capacitance variation of the measurement circuit. This capacitance measurement system uses quad two-input NAND Schmitt trigger circuit CD4093B with hysteresis for the measurement and this system is integrated with PIC 18F2550 microcontroller for data acquisition purpose. The microcontroller interacts with software developed in the PC end through USB architecture and an attractive graphical user interface (GUI) based system is developed in the PC end to provide the user with real time, online display of capacitance under measurement. The system uses a differential mode of capacitance measurement, with reference to a trimmer capacitance, that effectively compensates lead capacitances, a notorious error encountered in usual low capacitance measurements. The hysteresis provided in the Schmitt-trigger circuits enable reliable operation of the system by greatly minimizing the possibility of false triggering because of stray interferences, usually regarded as another source of significant error. The real life testing of the proposed system showed that our measurements could produce highly accurate capacitance measurements, when compared to cutting edge, high end digital capacitance meters.

Keywords: Capacitance measurement, NAND Schmitt trigger, microcontroller, GUI, lead compensation, hysteresis.

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226 Entanglement-based Quantum Computing by Diagrams of States

Authors: Sara Felloni, Giuliano Strini

Abstract:

We explore entanglement in composite quantum systems and how its peculiar properties are exploited in quantum information and communication protocols by means of Diagrams of States, a novel method to graphically represent and analyze how quantum information is elaborated during computations performed by quantum circuits. We present quantum diagrams of states for Bell states generation, measurements and projections, for dense coding and quantum teleportation, for probabilistic quantum machines designed to perform approximate quantum cloning and universal NOT and, finally, for quantum privacy amplification based on entanglement purification. Diagrams of states prove to be a useful approach to analyze quantum computations, by offering an intuitive graphic representation of the processing of quantum information. They also help in conceiving novel quantum computations, from describing the desired information processing to deriving the final implementation by quantum gate arrays.

Keywords: Diagrams of states, entanglement, quantum circuits, quantum information.

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225 Moisture Diffusivity of AAC with Different Densities

Authors: Tomáš Korecký, Kamil Ďurana, Miroslava Lapková, Robert Černý

Abstract:

Method of determining of moisture diffusivity on two types of autoclaved aerated concretes with different bulk density is represented in the paper. On the specimens were measured one dimensional water transport only on liquid phase. Ever evaluation was done from moisture profiles measured in specific times by capacitance moisture meter. All values from capacitance meter were recalculated to moisture content by mass. Moisture diffusivity was determined in dependence on both moisture and temperature. The experiment temperatures were set at values 55, 65, 75 and 85°C.

Keywords: moisture diffusivity, autoclaved aerated concrete, capacitance moisture meter

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224 A Programmer’s Survey of the Quantum Computing Paradigm

Authors: Philippe Jorrand

Abstract:

Research in quantum computation is looking for the consequences of having information encoding, processing and communication exploit the laws of quantum physics, i.e. the laws which govern the ultimate knowledge that we have, today, of the foreign world of elementary particles, as described by quantum mechanics. This paper starts with a short survey of the principles which underlie quantum computing, and of some of the major breakthroughs brought by the first ten to fifteen years of research in this domain; quantum algorithms and quantum teleportation are very biefly presented. The next sections are devoted to one among the many directions of current research in the quantum computation paradigm, namely quantum programming languages and their semantics. A few other hot topics and open problems in quantum information processing and communication are mentionned in few words in the concluding remarks, the most difficult of them being the physical implementation of a quantum computer. The interested reader will find a list of useful references at the end of the paper.

Keywords: Quantum information processing, quantum algorithms, quantum programming languages.

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223 Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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222 A Quantum Algorithm of Constructing Image Histogram

Authors: Yi Zhang, Kai Lu, Ying-hui Gao, Mo Wang

Abstract:

Histogram plays an important statistical role in digital image processing. However, the existing quantum image models are deficient to do this kind of image statistical processing because different gray scales are not distinguishable. In this paper, a novel quantum image representation model is proposed firstly in which the pixels with different gray scales can be distinguished and operated simultaneously. Based on the new model, a fast quantum algorithm of constructing histogram for quantum image is designed. Performance comparison reveals that the new quantum algorithm could achieve an approximately quadratic speedup than the classical counterpart. The proposed quantum model and algorithm have significant meanings for the future researches of quantum image processing.

Keywords: Quantum Image Representation, Quantum Algorithm, Image Histogram.

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221 C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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220 Unconditionally Secure Quantum Payment System

Authors: Essam Al-Daoud

Abstract:

A potentially serious problem with current payment systems is that their underlying hard problems from number theory may be solved by either a quantum computer or unanticipated future advances in algorithms and hardware. A new quantum payment system is proposed in this paper. The suggested system makes use of fundamental principles of quantum mechanics to ensure the unconditional security without prior arrangements between customers and vendors. More specifically, the new system uses Greenberger-Home-Zeilinger (GHZ) states and Quantum Key Distribution to authenticate the vendors and guarantee the transaction integrity.

Keywords: Bell state, GHZ state, Quantum key distribution, Quantum payment system.

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219 Application of Formyl-TIPPCu (II) for Temperature and Light Sensing

Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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218 Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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217 Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells

Authors: Rasha A. Abdullah, Mohammed. A. Razooqi, Adwan N. H. Al-Ajili

Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Keywords: SnO2/CdS/CdTe heterojunction, XRD, C-V measurement, I-V measurement, energy band diagram.

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216 Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance

Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat

Abstract:

In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.

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215 Development of a Spark Electrode Ignition System for an Explosion Vessel

Authors: Shaharin A. Sulaiman, Mizuan Minhat

Abstract:

This paper presents development of an ignition system using spark electrodes for application in a research explosion vessel. A single spark is aimed to be discharged with quantifiable ignition energy. The spark electrode system would enable study of flame propagation, ignitability of fuel-air mixtures and other fundamental characteristics of flames. The principle of the capacitive spark circuit of ASTM is studied to charge an appropriate capacitance connected across the spark gap through a large resistor by a high voltage from the source of power supply until the initiation of spark. Different spark energies could be obtained mainly by varying the value of the capacitance and the supply current. The spark sizes produced are found to be affected by the spark gap, electrode size, input voltage and capacitance value.

Keywords: Ignition, Spark Electrode, Flame

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214 The Magnetized Quantum Breathing in Cylindrical Dusty Plasma

Authors: A. Abdikian

Abstract:

A quantum breathing mode has been theatrically studied in quantum dusty plasma. By using linear quantum hydrodynamic model, not only the quantum dispersion relation of rotation mode but also void structure has been derived in the presence of an external magnetic field. Although the phase velocity of the magnetized quantum breathing mode is greater than that of unmagnetized quantum breathing mode, attenuation of the magnetized quantum breathing mode along radial distance seems to be slower than that of unmagnetized quantum breathing mode. Clearly, drawing the quantum breathing mode in the presence and absence of a magnetic field, we found that the magnetic field alters the distribution of dust particles and changes the radial and azimuthal velocities around the axis. Because the magnetic field rotates the dust particles and collects them, it could compensate the void structure.

Keywords: The linear quantum hydrodynamic model, the magnetized quantum breathing mode, the quantum dispersion relation of rotation mode, void structure.

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213 Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

Authors: Muhibul Haque Bhuyan, Farseem Mannan Mohammedy, Quazi Deen Mohd Khosru

Abstract:

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Scanning Capacitance Microscope, Atomic Force Microscope.

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212 A Semi-Cylindrical Capacitive Sensor Used for Soil Moisture Measurement

Authors: Subir Das, Tuhin Subhra Sarkar, Badal Chakraborty

Abstract:

Differing from the structure of traditional parallel plate capacitive sensor a semi cylindrical capacitive sensor has been introduced in this present work to measure the soil moisture conveniently. Here, the numerical analysis method to evaluate the capacitance from the semi-cylindrical capacitive sensor is analyzed and discussed. The changes of capacitance with the variation of soil moisture obtained linear in the nano farad range (nF) and which converted into voltage variation by using proper signal conditioning circuit. Experimental results depict the satisfactory performance of the sensor for measurement of soil moisture in the range of 0 to 70%. We investigated the linearity of 4% of FSO and sensitivity of 70 mV/unit percentage changes in soil moisture level (DB).

Keywords: Semi cylindrical Capacitive Sensor, Capacitance to Voltage converter Circuit, Soil Moisture.

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211 Correlation between Capacitance and Dissipation Factor used for Assessment of Stator Insulation

Authors: José Luis Oslinger, Luis Carlos Castro

Abstract:

Measurements of capacitance C and dissipation factor tand of the stator insulation system provide useful information about internal defects within the insulation. The index k is defined as the proportionality constant between the changes at high voltage of capacitance DC and of the dissipation factor Dtand . DC and Dtand values were highly correlated when small flat defects were within the insulation and that correlation was lost in the presence of large narrow defects like electrical treeing. The discrimination between small and large defects is made resorting to partial discharge PD phase angle analysis. For the validation of the results, C and tand measurements were carried out in a 15MVA 4160V steam turbine turbogenerator placed in a sugar mill. In addition, laboratory test results obtained by other authors were analyzed jointly. In such laboratory tests, model coil bars subjected to thermal cycling resulted highly degraded and DC and Dtand values were not correlated. Thus, the index k could not be calculated.

Keywords: Aging, capacitance, dissipation factor, electrical treeing, insulation condition, partial discharge.

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210 Quantum Enhanced Correlation Matrix Memories via States Orthogonalisation

Authors: Mario Mastriani, Marcelo Naiouf

Abstract:

This paper introduces a Quantum Correlation Matrix Memory (QCMM) and Enhanced QCMM (EQCMM), which are useful to work with quantum memories. A version of classical Gram-Schmidt orthogonalisation process in Dirac notation (called Quantum Orthogonalisation Process: QOP) is presented to convert a non-orthonormal quantum basis, i.e., a set of non-orthonormal quantum vectors (called qudits) to an orthonormal quantum basis, i.e., a set of orthonormal quantum qudits. This work shows that it is possible to improve the performance of QCMM thanks QOP algorithm. Besides, the EQCMM algorithm has a lot of additional fields of applications, e.g.: Steganography, as a replacement Hopfield Networks, Bilevel image processing, etc. Finally, it is important to mention that the EQCMM is an extremely easy to implement in any firmware.

Keywords: Quantum Algebra, correlation matrix memory, Dirac notation, orthogonalisation.

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209 On Quantum BCH Codes and Its Duals

Authors: J. S. Bhullar, Manish Gupta

Abstract:

Classical Bose-Chaudhuri-Hocquenghem (BCH) codes C that contain their dual codes can be used to construct quantum stabilizer codes this chapter studies the properties of such codes. It had been shown that a BCH code of length n which contains its dual code satisfies the bound on weight of any non-zero codeword in C and converse is also true. One impressive difficulty in quantum communication and computation is to protect informationcarrying quantum states against undesired interactions with the environment. To address this difficulty, many good quantum errorcorrecting codes have been derived as binary stabilizer codes. We were able to shed more light on the structure of dual containing BCH codes. These results make it possible to determine the parameters of quantum BCH codes in terms of weight of non-zero dual codeword.

Keywords: Quantum Codes, BCH Codes, Dual BCH Codes, Designed Distance.

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208 Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire

Authors: Sara Sedaghat, Mahmood Barati, Iraj Kazeminezhad

Abstract:

The ionization energy in semiconductor systems in nano scale was investigated by using effective mass approximation. By introducing the Hamiltonian of the system, the variational technique was employed to calculate the ground state and the ionization energy of a donor at the center and in the case that the impurities are randomly distributed inside a cubic quantum well. The numerical results for GaAs/GaAlAs show that the ionization energy strongly depends on the well width for both cases and it decreases as the well width increases. The ionization energy of a quantum wire was also calculated and compared with the results for the well.

Keywords: quantum well, quantum wire, quantum dot, impuritystate

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207 Algebraic Quantum Error Correction Codes

Authors: Ming-Chung Tsai, Kuan-Peng Chen, Zheng-Yao

Abstract:

A systematic and exhaustive method based on the group structure of a unitary Lie algebra is proposed to generate an enormous number of quantum codes. With respect to the algebraic structure, the orthogonality condition, which is the central rule of generating quantum codes, is proved to be fully equivalent to the distinguishability of the elements in this structure. In addition, four types of quantum codes are classified according to the relation of the codeword operators and some initial quantum state. By linking the unitary Lie algebra with the additive group, the classical correspondences of some of these quantum codes can be rendered.

Keywords: Quotient-Algebra Partition, Codeword Spinors, Basis Codewords, Syndrome Spinors

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206 An Authentication Protocol for Quantum Enabled Mobile Devices

Authors: Natarajan Venkatachalam, Subrahmanya V. R. K. Rao, Vijay Karthikeyan Dhandapani, Swaminathan Saravanavel

Abstract:

The quantum communication technology is an evolving design which connects multiple quantum enabled devices to internet for secret communication or sensitive information exchange. In future, the number of these compact quantum enabled devices will increase immensely making them an integral part of present communication systems. Therefore, safety and security of such devices is also a major concern for us. To ensure the customer sensitive information will not be eavesdropped or deciphered, we need a strong authentications and encryption mechanism. In this paper, we propose a mutual authentication scheme between these smart quantum devices and server based on the secure exchange of information through quantum channel which gives better solutions for symmetric key exchange issues. An important part of this work is to propose a secure mutual authentication protocol over the quantum channel. We show that our approach offers robust authentication protocol and further our solution is lightweight, scalable, cost-effective with optimized computational processing overheads.

Keywords: Quantum cryptography, quantum key distribution, wireless quantum communication, authentication protocol, quantum enabled device, trusted third party.

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205 Novel Design of Quantum Dot Arrays to Enhance Near-Fields Excitation Resonances

Authors: N. H. Ismail, A. A. A. Nassar, K. H. Baz

Abstract:

Semiconductor crystals smaller than about 10 nm, known as quantum dots, have properties that differ from large samples, including a band gap that becomes larger for smaller particles. These properties create several applications for quantum dots. In this paper new shapes of quantum dot arrays are used to enhance the photo physical properties of gold nano-particles. This paper presents a study of the effect of nano-particles shape, array, and size on their absorption characteristics.

Keywords: Quantum Dots, Nano-Particles, LSPR.

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204 Nonplanar Ion-acoustic Waves in a Relativistically Degenerate Quantum Plasma

Authors: Swarniv Chandra, Sibarjun Das, Agniv Chandra, Basudev Ghosh, Apratim Jash

Abstract:

Using the quantum hydrodynamic (QHD) model the nonlinear properties of ion-acoustic waves in are lativistically degenerate quantum plasma is investigated by deriving a nonlinear Spherical Kadomtsev–Petviashvili (SKP) equation using the standard reductive perturbation method equation. It was found that the electron degeneracy parameter significantly affects the linear and nonlinear properties of ion-acoustic waves in quantum plasma.

Keywords: Kadomtsev-Petviashvili equation, Ion-acoustic Waves, Relativistic Degeneracy, Quantum Plasma, Quantum Hydrodynamic Model.

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203 Dielectric Studies on Nano Zirconium Dioxide Synthesized through Co-Precipitation Process

Authors: K. Geethalakshmi, T. Prabhakaran, J. Hemalatha

Abstract:

Nano sized zirconium dioxide in monoclinic phase (m-ZrO2) has been synthesized in pure form through co-precipitation processing at different calcination temperatures and has been characterized by several techniques such as XRD, FT-IR, UV-Vis Spectroscopy and SEM. The dielectric and capacitance values of the pelletized samples have been examined at room temperature as the functions of frequency. The higher dielectric constant value of the sample having larger grain size proves the strong influence of grain size on the dielectric constant.

Keywords: capacitance, dielectric constant, m-ZrO2, nano zirconia

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202 Propagation of Nonlinear Surface Waves in Relativistically Degenerate Quantum Plasma Half-Space

Authors: Swarniv Chandra, Parthasona Maji, Basudev Ghosh

Abstract:

The nonlinear self-interaction of an electrostatic surface wave on a semibounded quantum plasma with relativistic degeneracy is investigated by using quantum hydrodynamic (QHD) model and the Poisson’s equation with appropriate boundary conditions. It is shown that a part of the second harmonic generated through self-interaction does not have a true surface wave character but propagates obliquely away from the plasma-vacuum interface into the bulk of plasma.

Keywords: Harmonic Generation, Quantum Plasma, Quantum Hydrodynamic Model, Relativistic Degeneracy, Surface waves.

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201 Fabrication and Study of Nickel Phthalocyanine based Surface Type Capacitive Sensors

Authors: Mutabar Shah, Muhammad Hassan Sayyad, Khasan S. Karimov

Abstract:

Thin films of Nickel phthalocynine (NiPc) of different thicknesses (100, 150 and 200 nm) were deposited by thermal evaporator on glass substrates with preliminary deposited aluminum electrodes to form Al/NiPc/Al surface-type capacitive humidity sensors. The capacitance-humidity relationships of the sensors were investigated at humidity levels from 35 to 90% RH. It was observed that the capacitance value increases nonlinearly with increasing humidity level. All measurements were taken at room temperature.

Keywords: Capacitive sensor, Humidity, Nickel phthalocyanine, Organic semiconductor.

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200 CdS Quantum Dots as Fluorescent Probes for Detection of Naphthalene

Authors: Zhengyu Yan, Yan Yu, Jianqiu Chen

Abstract:

A novel sensing system has been designed for naphthalene detection based on the quenched fluorescence signal of CdS quantum dots. The fluorescence intensity of the system reduced significantly after adding CdS quantum dots to the water pollution model because of the fluorescent static quenching f mechanism. Herein, we have demonstrated the facile methodology can offer a convenient and low analysis cost with the recovery rate as 97.43%-103.2%, which has potential application prospect.

Keywords: CdS quantum dots, modification, detection, naphthalene.

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199 Behavior of Current in a Semiconductor Nanostructure under Influence of Embedded Quantum Dots

Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

Abstract:

Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: Quantum semiconductors, nanostructures, quantum dots, spin polarization.

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