Search results for: negative Miller capacitance.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 923

Search results for: negative Miller capacitance.

923 Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation

Authors: Muhaned Zaidi, Ian Grout, Abu Khari bin A’ain

Abstract:

In this paper, a two-stage op-amp design is considered using both Miller and negative Miller compensation techniques. The first op-amp design uses Miller compensation around the second amplification stage, whilst the second op-amp design uses negative Miller compensation around the first stage and Miller compensation around the second amplification stage. The aims of this work were to compare the gain and phase margins obtained using the different compensation techniques and identify the ability to choose either compensation technique based on a particular set of design requirements. The two op-amp designs created are based on the same two-stage rail-to-rail output CMOS op-amp architecture where the first stage of the op-amp consists of differential input and cascode circuits, and the second stage is a class AB amplifier. The op-amps have been designed using a 0.35mm CMOS fabrication process.

Keywords: Op-amp, rail-to-rail output, Miller compensation, negative Miller capacitance.

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922 Capacitance Models of AlGaN/GaN High Electron Mobility Transistors

Authors: A. Douara, N. Kermas, B. Djellouli

Abstract:

In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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921 Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: Debye length, Depletion width, flat band capacitance, impurity concentration.

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920 Low Value Capacitance Measurement System with Adjustable Lead Capacitance Compensation

Authors: Gautam Sarkar, Anjan Rakshit, Amitava Chatterjee, Kesab Bhattacharya

Abstract:

The present paper describes the development of a low cost, highly accurate low capacitance measurement system that can be used over a range of 0 – 400 pF with a resolution of 1 pF. The range of capacitance may be easily altered by a simple resistance or capacitance variation of the measurement circuit. This capacitance measurement system uses quad two-input NAND Schmitt trigger circuit CD4093B with hysteresis for the measurement and this system is integrated with PIC 18F2550 microcontroller for data acquisition purpose. The microcontroller interacts with software developed in the PC end through USB architecture and an attractive graphical user interface (GUI) based system is developed in the PC end to provide the user with real time, online display of capacitance under measurement. The system uses a differential mode of capacitance measurement, with reference to a trimmer capacitance, that effectively compensates lead capacitances, a notorious error encountered in usual low capacitance measurements. The hysteresis provided in the Schmitt-trigger circuits enable reliable operation of the system by greatly minimizing the possibility of false triggering because of stray interferences, usually regarded as another source of significant error. The real life testing of the proposed system showed that our measurements could produce highly accurate capacitance measurements, when compared to cutting edge, high end digital capacitance meters.

Keywords: Capacitance measurement, NAND Schmitt trigger, microcontroller, GUI, lead compensation, hysteresis.

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919 Miller’s Model for Developing Critical Thinking Skill of Pre-Service Teachers at Suan Sunandha Rajabhat University

Authors: Suttipong Boonphadung, Thassanant Unnanantn

Abstract:

This research focused on comparing the critical thinking of the teacher students before and after using Miller’s Model learning activities and investigating their opinions. The sampling groups were (1) fourth year 33 student teachers majoring in Early Childhood Education and enrolling in semester 1 of academic year 2013 (2) third year 28 student teachers majoring in English and enrolling in semester 2 of academic year 2013 and (3) third year 22 student teachers majoring in Thai and enrolling in semester 2 of academic year 2013. The research instruments were (1) lesson plans where the learning activities were settled based on Miller’s Model (2) critical thinking assessment criteria and (3) a questionnaire on opinions towards Miller’s Model based learning activities. The statistical treatment was mean, deviation, different scores and T-test. The result unfolded that (1) the critical thinking of the students after the assigned activities was better than before and (2) the students’ opinions towards the critical thinking improvement activities based on Miller’s Model ranged from the level of high to highest.

Keywords: Critical thinking, Miller’s model, Opinions.

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918 Moisture Diffusivity of AAC with Different Densities

Authors: Tomáš Korecký, Kamil Ďurana, Miroslava Lapková, Robert Černý

Abstract:

Method of determining of moisture diffusivity on two types of autoclaved aerated concretes with different bulk density is represented in the paper. On the specimens were measured one dimensional water transport only on liquid phase. Ever evaluation was done from moisture profiles measured in specific times by capacitance moisture meter. All values from capacitance meter were recalculated to moisture content by mass. Moisture diffusivity was determined in dependence on both moisture and temperature. The experiment temperatures were set at values 55, 65, 75 and 85°C.

Keywords: moisture diffusivity, autoclaved aerated concrete, capacitance moisture meter

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917 Application of Formyl-TIPPCu (II) for Temperature and Light Sensing

Authors: Dil Nawaz Khan, M. H. Sayyad, Muhammad Yaseen, Munawar Ali Munawar, Mukhtar Ali

Abstract:

Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions.

Keywords: formyl-TIPPCu(II), Organic semiconductor, Photocapacitance, Polarizability.

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916 Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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915 Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells

Authors: Rasha A. Abdullah, Mohammed. A. Razooqi, Adwan N. H. Al-Ajili

Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Keywords: SnO2/CdS/CdTe heterojunction, XRD, C-V measurement, I-V measurement, energy band diagram.

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914 Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance

Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat

Abstract:

In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.

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913 Development of a Spark Electrode Ignition System for an Explosion Vessel

Authors: Shaharin A. Sulaiman, Mizuan Minhat

Abstract:

This paper presents development of an ignition system using spark electrodes for application in a research explosion vessel. A single spark is aimed to be discharged with quantifiable ignition energy. The spark electrode system would enable study of flame propagation, ignitability of fuel-air mixtures and other fundamental characteristics of flames. The principle of the capacitive spark circuit of ASTM is studied to charge an appropriate capacitance connected across the spark gap through a large resistor by a high voltage from the source of power supply until the initiation of spark. Different spark energies could be obtained mainly by varying the value of the capacitance and the supply current. The spark sizes produced are found to be affected by the spark gap, electrode size, input voltage and capacitance value.

Keywords: Ignition, Spark Electrode, Flame

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912 Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

Authors: Muhibul Haque Bhuyan, Farseem Mannan Mohammedy, Quazi Deen Mohd Khosru

Abstract:

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Keywords: Linear Pocket Profile, Pocket Implanted n-MOSFET, Scanning Capacitance Microscope, Atomic Force Microscope.

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911 A Semi-Cylindrical Capacitive Sensor Used for Soil Moisture Measurement

Authors: Subir Das, Tuhin Subhra Sarkar, Badal Chakraborty

Abstract:

Differing from the structure of traditional parallel plate capacitive sensor a semi cylindrical capacitive sensor has been introduced in this present work to measure the soil moisture conveniently. Here, the numerical analysis method to evaluate the capacitance from the semi-cylindrical capacitive sensor is analyzed and discussed. The changes of capacitance with the variation of soil moisture obtained linear in the nano farad range (nF) and which converted into voltage variation by using proper signal conditioning circuit. Experimental results depict the satisfactory performance of the sensor for measurement of soil moisture in the range of 0 to 70%. We investigated the linearity of 4% of FSO and sensitivity of 70 mV/unit percentage changes in soil moisture level (DB).

Keywords: Semi cylindrical Capacitive Sensor, Capacitance to Voltage converter Circuit, Soil Moisture.

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910 Correlation between Capacitance and Dissipation Factor used for Assessment of Stator Insulation

Authors: José Luis Oslinger, Luis Carlos Castro

Abstract:

Measurements of capacitance C and dissipation factor tand of the stator insulation system provide useful information about internal defects within the insulation. The index k is defined as the proportionality constant between the changes at high voltage of capacitance DC and of the dissipation factor Dtand . DC and Dtand values were highly correlated when small flat defects were within the insulation and that correlation was lost in the presence of large narrow defects like electrical treeing. The discrimination between small and large defects is made resorting to partial discharge PD phase angle analysis. For the validation of the results, C and tand measurements were carried out in a 15MVA 4160V steam turbine turbogenerator placed in a sugar mill. In addition, laboratory test results obtained by other authors were analyzed jointly. In such laboratory tests, model coil bars subjected to thermal cycling resulted highly degraded and DC and Dtand values were not correlated. Thus, the index k could not be calculated.

Keywords: Aging, capacitance, dissipation factor, electrical treeing, insulation condition, partial discharge.

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909 The Attitudes of Pre-Service Teachers towards Analytical Thinking Skill Development Based On Miller’s Model

Authors: Thassanant Unnanantn, Suttipong Boonphadung

Abstract:

This research study aimed to survey and analyze the attitudes of pre-service teachers’ the analytical thinking development based on Miller’s Model. The informants of this study were 22 third year teacher students majoring in Thai. The course where the instruction was conducted was English for Academic Purposes in Thai Language 2. The instrument of this research was an open-ended questionnaire with two dimensions of questions: academic and satisfaction dimensions. The investigation revealed the positive attitudes. In the academic dimension, the majority of 12 (54.54%), the highest percentage, reflected that the method of teaching analytical thinking and language simultaneously was their new knowledge and the similar percentage also belonged to text cohesion in writing. For the satisfaction, the highest frequency count was from 17 of them (77.27%) and this majority favored the openness or friendliness of the teacher.

Keywords: Analytical thinking development, Attitudes, Miller’s Model, Pre-service teachers.

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908 Dielectric Studies on Nano Zirconium Dioxide Synthesized through Co-Precipitation Process

Authors: K. Geethalakshmi, T. Prabhakaran, J. Hemalatha

Abstract:

Nano sized zirconium dioxide in monoclinic phase (m-ZrO2) has been synthesized in pure form through co-precipitation processing at different calcination temperatures and has been characterized by several techniques such as XRD, FT-IR, UV-Vis Spectroscopy and SEM. The dielectric and capacitance values of the pelletized samples have been examined at room temperature as the functions of frequency. The higher dielectric constant value of the sample having larger grain size proves the strong influence of grain size on the dielectric constant.

Keywords: capacitance, dielectric constant, m-ZrO2, nano zirconia

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907 Fabrication and Study of Nickel Phthalocyanine based Surface Type Capacitive Sensors

Authors: Mutabar Shah, Muhammad Hassan Sayyad, Khasan S. Karimov

Abstract:

Thin films of Nickel phthalocynine (NiPc) of different thicknesses (100, 150 and 200 nm) were deposited by thermal evaporator on glass substrates with preliminary deposited aluminum electrodes to form Al/NiPc/Al surface-type capacitive humidity sensors. The capacitance-humidity relationships of the sensors were investigated at humidity levels from 35 to 90% RH. It was observed that the capacitance value increases nonlinearly with increasing humidity level. All measurements were taken at room temperature.

Keywords: Capacitive sensor, Humidity, Nickel phthalocyanine, Organic semiconductor.

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906 Theoretical Background of Dividend Taxation

Authors: Margareta Ilkova, Petr Teply

Abstract:

The article deals with dividends and their distribution from investors from a theoretical point of view. Some studies try to analyzed the reaction of the market on the dividend announcement and found out the change of dividend policy is associated with abnormal returns around the dividend announcement date. Another researches directly questioned the investors about their dividend preference and beliefs. Investors want the dividend from many reasons (e.g. some of them explain the dividend preference by the existence of transaction cost; investors prefer the dividend today, because there is less risky; the managers have private information about the firm). The most controversial theory of dividend policy was developed by Modigliani and Miller (1961) who demonstrated that in the perfect and complete capital markets the dividend policy is irrelevant and the value of the company is independent of its payout policy. Nevertheless, in the real world the capital markets are imperfect, because of asymmetric information, transaction costs, incomplete contracting possibilities and taxes.

Keywords: dividend distribution, taxation, payout policy, investor, Modigliani and Miller theorem

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905 Resonant-Based Capacitive Pressure Sensor Read-Out Oscillating at 1.67 GHz in 0.18

Authors: Yong Wang, Wang Ling Goh, Jung Hyup Lee, Kevin T. C. Chai, Minkyu Je

Abstract:

This paper presents a resonant-based read-out circuit for capacitive pressure sensors. The proposed read-out circuit consists of an LC oscillator and a counter. The circuit detects the capacitance changes of a capacitive pressure sensor by means of frequency shifts from its nominal operation frequency. The proposed circuit is designed in 0.18m CMOS with an estimated power consumption of 43.1mW. Simulation results show that the circuit has a capacitive resolution of 8.06kHz/fF, which enables it for high resolution pressure detection.

Keywords: Capacitance-to-frequency converter, Capacitive pressure sensor, Digital counter, LC oscillator.

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904 Theory of Nanowire Radial p-n-Junction

Authors: Stepan Petrosyan, Ashkhen Yesayan, Suren Nersesyan

Abstract:

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Keywords: Snanowire, p-n- junction, barrier capacitance, high injection.

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903 Metal Berthelot Tubes with Windows for Observing Cavitation under Static Negative Pressure

Authors: K. Hiro, Y. Imai, T. Sasayama

Abstract:

Cavitation under static negative pressure is not revealed well. The Berthelot method to generate such negative pressure can be a means to study cavitation inception. In this study, metal Berthelot tubes built in observation windows are newly developed and are checked whether high static negative pressure is generated or not. Negative pressure in the tube with a pair of a corundum plate and an aluminum gasket increased with temperature cycles. The trend was similar to that as reported before.

Keywords: Berthelot method, negative pressure, cavitation.

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902 Influence of Paralleled Capacitance Effect in Well-defined Multiple Value Logical Level System with Active Load

Authors: Chih Chin Yang, Yen Chun Lin, Hsiao Hsuan Cheng

Abstract:

Three similar negative differential resistance (NDR) profiles with both high peak to valley current density ratio (PVCDR) value and high peak current density (PCD) value in unity resonant tunneling electronic circuit (RTEC) element is developed in this paper. The PCD values and valley current density (VCD) values of the three NDR curves are all about 3.5 A and 0.8 A, respectively. All PV values of NDR curves are 0.40 V, 0.82 V, and 1.35 V, respectively. The VV values are 0.61 V, 1.07 V, and 1.69 V, respectively. All PVCDR values reach about 4.4 in three NDR curves. The PCD value of 3.5 A in triple PVCDR RTEC element is better than other resonant tunneling devices (RTD) elements. The high PVCDR value is concluded the lower VCD value about 0.8 A. The low VCD value is achieved by suitable selection of resistors in triple PVCDR RTEC element. The low PV value less than 1.35 V possesses low power dispersion in triple PVCDR RTEC element. The designed multiple value logical level (MVLL) system using triple PVCDR RTEC element provides equidistant logical level. The logical levels of MVLL system are about 0.2 V, 0.8 V, 1.5 V, and 2.2 V from low voltage to high voltage and then 2.2 V, 1.3 V, 0.8 V, and 0.2 V from high voltage back to low voltage in half cycle of sinusoid wave. The output level of four levels MVLL system is represented in 0.3 V, 1.1 V, 1.7 V, and 2.6 V, which satisfies the NMP condition of traditional two-bit system. The remarkable logical characteristic of improved MVLL system with paralleled capacitor are with four significant stable logical levels about 220 mV, 223 mV, 228 mV, and 230 mV. The stability and articulation of logical levels of improved MVLL system are outstanding. The average holding time of improved MVLL system is approximately 0.14 μs. The holding time of improved MVLL system is fourfold than of basic MVLL system. The function of additional capacitor in the improved MVLL system is successfully discovered.

Keywords: Capacitance, Logical level, Constant current source

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901 Analysis of SEIG for a Wind Pumping Plant Using Induction Motor

Authors: A. Abbou, H. Mahmoudi, M. Akherraz

Abstract:

In contrast to conventional generators, self-excited induction generators are found to be most suitable machines for wind energy conversion in remote and windy areas due to many advantages over grid connected machines. This papers presents a Self-Excited Induction Generator (SEIG) driven by wind turbine and supplying an induction motor which is coupled to a centrifugal pump. A method to describe the steady state performance based on nodal analysis is presented. Therefore the advanced knowledge of the minimum excitation capacitor value is required. The effects of variation of excitation capacitance on system and rotor speed under different loading conditions have been analyzed and considered to optimize induction motor pump performances.

Keywords: SEIG, Induction Motor, Centrifugal Pump, capacitance requirements, wind rotor speed.

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900 C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Authors: Shuvro Chowdhury, Esmat Farzana, Rizvi Ahmed, A. T. M. Golam Sarwar, M. Ziaur Rahman Khan

Abstract:

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Keywords: C-V characteristics, Self-Consistent Analysis, Siliconon-Insulator, Ultra-thin film.

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899 Moment Estimators of the Parameters of Zero-One Inflated Negative Binomial Distribution

Authors: Rafid Saeed Abdulrazak Alshkaki

Abstract:

In this paper, zero-one inflated negative binomial distribution is considered, along with some of its structural properties, then its parameters were estimated using the method of moments. It is found that the method of moments to estimate the parameters of the zero-one inflated negative binomial models is not a proper method and may give incorrect conclusions.

Keywords: Zero one inflated models, negative binomial distribution, moments estimator, non-negative integer sampling.

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898 A Note on Negative Hypergeometric Distribution and Its Approximation

Authors: S. B. Mansuri

Abstract:

In this paper, at first we explain about negative hypergeometric distribution and its properties. Then we use the w-function and the Stein identity to give a result on the poisson approximation to the negative hypergeometric distribution in terms of the total variation distance between the negative hypergeometric and poisson distributions and its upper bound.

Keywords: Negative hypergeometric distribution, Poisson distribution, Poisson approximation, Stein-Chen identity, w-function.

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897 High-Resolution 12-Bit Segmented Capacitor DAC in Successive Approximation ADC

Authors: Wee Leong Son, Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper study the segmented split capacitor Digital-to-Analog Converter (DAC) implemented in a differentialtype 12-bit Successive Approximation Analog-to-Digital Converter (SA-ADC). The series capacitance split array method employed as it reduced the total area of the capacitors required for high resolution DACs. A 12-bit regular binary array structure requires 2049 unit capacitors (Cs) while the split array needs 127 unit Cs. These results in the reduction of the total capacitance and power consumption of the series split array architectures as to regular binary-weighted structures. The paper will show the 12-bit DAC series split capacitor with 4-bit thermometer coded DAC architectures as well as the simulation and measured results.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Low voltage ADC.

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896 Learning to Recommend with Negative Ratings Based on Factorization Machine

Authors: Caihong Sun, Xizi Zhang

Abstract:

Rating prediction is an important problem for recommender systems. The task is to predict the rating for an item that a user would give. Most of the existing algorithms for the task ignore the effect of negative ratings rated by users on items, but the negative ratings have a significant impact on users’ purchasing decisions in practice. In this paper, we present a rating prediction algorithm based on factorization machines that consider the effect of negative ratings inspired by Loss Aversion theory. The aim of this paper is to develop a concave and a convex negative disgust function to evaluate the negative ratings respectively. Experiments are conducted on MovieLens dataset. The experimental results demonstrate the effectiveness of the proposed methods by comparing with other four the state-of-the-art approaches. The negative ratings showed much importance in the accuracy of ratings predictions.

Keywords: Factorization machines, feature engineering, negative ratings, recommendation systems.

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895 Discrimination of Modes of Double- and Single-Negative Grounded Slab

Authors: R. Borghol, T. Aguili

Abstract:

In this paper, we investigate theoretically the waves propagation in a lossless double-negative grounded slab (DNG). This study is performed by the Transverse Resonance Method (TRM). The proper or improper nature of real and complex modes is observed. They are highly dependent on metamaterial parameters, i.e. ɛr-negative, µr-negative, or both. Numerical results provided that only the proper complex modes (i.e., leaky modes) exist in DNG slab, and only the improper complex modes exist in single-negative grounded slab.

Keywords: Double-negative grounded slab, real and complex modes, single-negative grounded slab, transverse resonance method.

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894 Flexible Laser Reduced Graphene Oxide/ MnO2 Electrode for Supercapacitor Applications

Authors: Ingy N. Bkrey, Ahmed A. Moniem

Abstract:

We succeeded to produce a high performance and flexible graphene/Manganese dioxide (G/MnO2) electrode coated on flexible polyethylene terephthalate (PET) substrate. The graphene film is initially synthesized by drop-casting the graphene oxide (GO) solution on the PET substrate, followed by simultaneous reduction and patterning of the dried film using carbon dioxide (CO2) laser beam with power of 1.8 W. Potentiostatic Anodic Deposition method was used to deposit thin film of MnO2 with different loading mass 10 – 50 and 100 μg.cm-2 on the pre-prepared graphene film. The electrodes were fully characterized in terms of structure, morphology, and electrochemical performance. A maximum specific capacitance of 973 F.g-1 was attributed when depositing 50μg.cm-2 MnO2 on the laser reduced graphene oxide rGO (or G/50MnO2) and over 92% of its initial capacitance was retained after 1000 cycles. The good electrochemical performance and long-term cycling stability make our proposed approach a promising candidate in the supercapacitor applications.

Keywords: Electrode Deposition, Flexible, Graphene oxide, Graphene, High Power CO2 Laser, MnO2.

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