Search results for: latch

Authors: Guo-Ming Sung, Naga Raju Naik R.

Abstract:

Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 529

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 772

Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2841

Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2714

Authors: Soon Jai Yi, Sun-Hong Kim, Hang-Geun Jeong, Seong-Ik Cho

Abstract:

This paper presents a method of reducing the feedback delay time of DWA(Data Weighted Averaging) used in sigma-delta modulators. The delay time reduction results from the elimination of the latch at the quantizer output and also from the falling edge operation. The designed sigma-delta modulator improves the timing margin about 16%. The sub-circuits of sigma-delta modulator such as SC(Switched Capacitor) integrator, 9-level quantizer, comparator, and DWA are designed with the non-ideal characteristics taken into account. The sigma-delta modulator has a maximum SNR (Signal to Noise Ratio) of 84 dB or 13 bit resolution.

Keywords: Sigma-delta modulator, multibit, DWA

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2354

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 945

Authors: Hema Sandhya Jagarlamudi, Mousumi Saha, Pavan Kumar Jagarlamudi

Abstract:

The use of Quantum dots is a promising emerging Technology for implementing digital system at the nano level. It is effecient for attractive features such as faster speed , smaller size and low power consumption than transistor technology. In this paper, various Combinational and sequential logical structures - HALF ADDER, SR Latch and Flip-Flop, D Flip-Flop preceding NAND, NOR, XOR,XNOR are discussed based on QCA design, with comparatively less number of cells and area. By applying these layouts, the hardware requirements for a QCA design can be reduced. These structures are designed and simulated using QCA Designer Tool. By taking full advantage of the unique features of this technology, we are able to create complete circuits on a single layer of QCA. Such Devices are expected to function with ultra low power Consumption and very high speeds.

Keywords: QCA, QCA Designer, Clock, Majority Gate

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2575

Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2012

Authors: Aakash Subramanian, Vansh Pal Singh Makh, Abhijit Mitra

Abstract:

A new digital transceiver circuit for asynchronous frame detection is proposed where both the transmitter and receiver contain all digital components, thereby avoiding possible use of conventional devices like monostable multivibrators with unstable external components such as resistances and capacitances. The proposed receiver circuit, in particular, uses a combinational logic block yielding an output which changes its state as soon as the start bit of a new frame is detected. This, in turn, helps in generating an efficient receiver sampling clock. A data latching circuit is also used in the receiver to latch the recovered data bits in any new frame. The proposed receiver structure is also extended from 4- bit information to any general n data bits within a frame with a common expression for the output of the combinational logic block. Performance of the proposed hardware design is evaluated in terms of time delay, reliability and robustness in comparison with the standard schemes using monostable multivibrators. It is observed from hardware implementation that the proposed circuit achieves almost 33 percent speed up over any conventional circuit.

Keywords: Asynchronous Communication, Digital Detector, Combinational logic output, Sampling clock generator, Hardwareimplementation.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2157

Authors: Suresh Alapati, Sreehari Rao Patri, K. S. R. Krishna Prasad

Abstract:

Anultra-low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gainenhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 )A. An undershot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 )s for the output voltage undershooting case. The load regulation is of 2.77 )V/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: Capacitor-less LDO, frequency compensation, Transient response, latch, self-biased differential amplifier.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 4014

Authors: M. Geetha Priya, K. Baskaran, S. Srinivasan

Abstract:

Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.

Keywords: Low power, CMOS, pass-transistor, flash memory, logic gates.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2386