Search results for: high gain

Authors: M.Yousefi, A.Vatanjou, F.Nazeri

Abstract:

A fast settling multipath CMOS OTA for high speed switched capacitor applications is presented here. With the basic topology similar to folded-cascode, bandwidth and DC gain of the OTA are enhanced by adding extra paths for signal from input to output. Designed circuit is simulated with HSPICE using level 49 parameters (BSIM 3v3) in 0.35mm standard CMOS technology. DC gain achieved is 56.7dB and Unity Gain Bandwidth (UGB) obtained is 1.15GHz. These results confirm that adding extra paths for signal can improve DC gain and UGB of folded-cascode significantly.

Keywords: OTA (Operational Transconductance Amplifier), DC gain, Unity Gain Bandwidth (UGBW)

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Authors: Hassan Faraji Baghtash

Abstract:

A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.

Keywords: Current mirror, current mode, low power, low voltage, tunable circuit, variable current amplifier.

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Authors: Jaeho Han, Moonjung Kim, Won-Ho Kim, Chang-Ho Hyun

Abstract:

This paper introduces a high-gain observer based state of charge(SOC) estimator for lithium-Ion batteries. The proposed SOC estimator has a high-gain observer(HGO) structure. The HGO scheme enhances the transient response speed and diminishes the effect of uncertainties. Furthermore, it guarantees that the output feedback controller recovers the performance of the state feedback controller when the observer gain is sufficiently high. In order to show the effectiveness of the proposed method, the linear RC battery model in ADVISOR is used. The performance of the proposed method is compared with that of the conventional linear observer(CLO) and some simulation result is given.

Keywords: SOC, high-gain, observer, uncertainties, robust

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Authors: Young-Min Ko, Dong-Hyun Ha, Chang-Bin Ha, Hyoung-Kyu Song

Abstract:

In recent years, a multi-antenna system is actively used to improve the performance of the communication. A MIMO-OFDM system can provide multiplexing gain or diversity gain. These gains are obtained in proportion to the increase of the number of antennas. In order to provide the optimal gain of the MIMO-OFDM system, various transmission and reception schemes are presented. This paper aims to propose a hybrid scheme that base station provides both diversity gain and multiplexing gain at the same time.

Keywords: DFE, diversity gain, hybrid, MIMO, multiplexing gain.

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Authors: Mansour Nikpour, Mohd Zin kandar, Mohsen Ghasemi, Hossein Fallah

Abstract:

Over half of the total electricity consumption is used in buildings. Air-conditioning and electric lighting are the two main resources of electricity consumption in high rise buildings. One way to reduce electricity consumption would be to limit heat gain into buildings, therefore reduce the demand for air-conditioning during hot summer months especially in hot regions. On the other hand natural daylight can be used to reduce the use of electricity for artificial lighting. In this paper effective factors on minimizing heat gain and achieving required day light were reviewed .As daylight always accompanied by solar heat gain. Also interactions between heat gain and daylight were discussed through previous studies and equations which are related to heat gain and day lighting especially in high rise buildings. As a result importance of building-s form and its component on energy consumption in buildings were clarified.

Keywords: High rise buildings, energy demand, day lighting, heat gain.

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Authors: Gao Wei, Xu Minglu, Xu Yan, Zhang Xiaotong, Wang Xinghua

Abstract:

A 3.5-bit stage of the CMOS pipelined ADC is proposed. In this report, the main part of 3.5-bit stage ADC is introduced. How the MDAC, comparator and encoder worked and designed are shown in details. Besides, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with differential amplifier, this OTA achieve high-gain and high-speed. This design was using CMOS 0.18um process and simulation in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB, the unity gain bandwidth of about 1.138GHz with 2pF load.

Keywords: pipelined ADC, MDAC, operational amplifier.

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Authors: Alpana Agarwal, Akhil Sharma

Abstract:

This work presents a fully differential CMOS amplifier consisting of two self-biased gain boosted inverter stages, that provides an alternative to the power hungry operational amplifier. The self-biasing avoids the use of external biasing circuitry, thus reduces the die area, design efforts, and power consumption. In the present work, regulated cascode technique has been employed for gain boosting. The Miller compensation is also applied to enhance the phase margin. The circuit has been designed and simulated in 1.8 V 0.18 µm CMOS technology. The simulation results show a high DC gain of 100.7 dB, Unity-Gain Bandwidth of 107.8 MHz, and Phase Margin of 66.7^o with a power dissipation of 286 μW and makes it suitable candidate for the high resolution pipelined ADCs.

Keywords: CMOS amplifier, gain boosting, inverter-based amplifier, self-biased inverter.

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Authors: Gu Wei, Gao Wei

Abstract:

In this report, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with difference-ended amplifier, this OTA achieve high-gain and high-speed. Besides, the CMFB circuit is also used, and some methods are concerned to improve the performance. Then, by optimization the layout design, OTA-s mismatch was reduced. This design was using TSMC 0.18um CMOS process and simulation both schematic and layout in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB,a unity gain bandwidth of about 1.437GHz for a 2pF load, a slew rate is about 428V/μs, a output swing is 0.2V~1.35V, with the power supply of 1.8V, the power consumption is 88mW. This amplifier was used in a 10bit 150MHz pipelined ADC.

Keywords: OTA, common drain, CMFB, pipelined ADC

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Authors: M. H. Al-Mansoori, W. S. Al-Ghaithi, F. N. Hasoon

Abstract:

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band Erbium-Doped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage is suppressed by using a tunable band-pass filter. The amplifier achieves a signal gain of 55 dB with low noise figure of 3.8 dB at -50 dBm input signal power. The amplifier gain shows significant improvement of 12.8 dB compared to amplifier structure without ASE suppression.

Keywords: Optical amplifiers, EDFA, L-band, optical networks.

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Authors: Yasir Mahmood Qureshi

Abstract:

This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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Authors: Omar Qasaimeh

Abstract:

The effect of the number of quantum dot (QD) layers on the saturated gain of doped QD semiconductor optical amplifiers (SOAs) has been studied using multi-population coupled rate equations. The developed model takes into account the effect of carrier coupling between adjacent layers. It has been found that increasing the number of QD layers (K) increases the unsaturated optical gain for K<8 and approximately has no effect on the unsaturated gain for K ≥ 8. Our analysis shows that the optimum ptype concentration that maximizes the unsaturated optical gain of the ground state is NA Ôëê 0.75 ×1018cm-3 . On the other hand, it has been found that the saturated optical gain for both the ground state and the excited state are strong function of both the doping concentration and K where we find that it is required to dope the dots with n-type concentration for very large K at high photon energy.

Keywords: doping, multilayer, quantum dot optical amplifier, saturated gain.

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Authors: V. Kesornpatumanun, P. Boonek, W. Silabut, N. Homsup, W. Kuhirun

Abstract:

This paper increases directivity and gain of Small Planar Dipole Antenna (SPDA) by using Symmetrical Pyramidal Block (SPB) which operates in X band at 11 GHz. The SPB consists four sides; each of which is metamaterial with Epsilon Negative Medium (ENG) and Epsilon Near-Zero (ENZ). The results simulated using the High Frequency Structure Simulator (HFSS) show that the SPB is capable of enhancing directivity and gain for the SPDA with maximum gain of 2.46 dB. The reflection coefficient is -13.7037 dB with narrow beam width.

Keywords: Small Planar Dipole Antenna, Symmetrical Pyramidal Block, metamaterials, Epsilon Near-Zero, Epsilon Negative Medium.

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Authors: Surinder Singh, Adish Bindal

Abstract:

The effects of the pumping wavelength and their power on the gain flattening of a fiber Raman amplifier (FRA) are investigated. The multi-wavelength pumping scheme is utilized to achieve gain flatness in FRA. It is proposed that gain flatness becomes better with increase in number of pumping wavelengths applied. We have achieved flat gain with 0.27 dB fluctuation in a spectral range of 1475-1600 nm for a Raman fiber length of 10 km by using six pumps with wavelengths with in the 1385-1495 nm interval. The effect of multi-wavelength pumping scheme on gain saturation in FRA is also studied. It is proposed that gain saturation condition gets improved by using this scheme and this scheme is more useful for higher spans of Raman fiber length.

Keywords: FRA, gain, pumping, WDM.

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Authors: P. Kamphikul, P. Krachodnok, R. Wongsan

Abstract:

This paper presents the gain improvement of a sector antenna for mobile phone base station by using the new technique to enhance its gain for microstrip antenna (MSA) array without construction enlargement. The curved woodpile Electromagnetic Band Gap (EBG) has been utilized to improve the gain instead. The advantages of this proposed antenna are reducing the length of MSAs array but providing the higher gain and easy fabrication and installation. Moreover, it provides a fan-shaped radiation pattern, wide in the horizontal direction and relatively narrow in the vertical direction, which appropriate for mobile phone base station. The paper also presents the design procedures of a 1x8 MSAs array associated with U-shaped reflector for decreasing their back and side lobes. The fabricated curved woodpile EBG exhibits bandgap characteristics at 2.1 GHz and is utilized for realizing a resonant cavity of MSAs array. This idea has been verified by both the Computer Simulation Technology (CST) software and experimental results. As the results, the fabricated proposed antenna achieves a high gain of 20.3 dB and the half-power beam widths in the E- and H-plane of 36.8 and 8.7 degrees, respectively. Good qualitative agreement between measured and simulated results of the proposed antenna was obtained.

Keywords: Gain Improvement, Microstrip Antenna Array, Electromagnetic Band Gap, Base Station.

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Authors: Guiheng Zhang, Wei Zhang, Jun Fu, Yudong Wang

Abstract:

A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.

Keywords: High gain power amplifier, linearization bias circuit, SiGe HBT model, Volterra Series.

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Authors: Ali Beydoun, Van-Tam Nguyen, Patrick Loumeau

Abstract:

Time interleaved sigma-delta (TIΣΔ) architecture is a potential candidate for high bandwidth analog to digital converters (ADC) which remains a bottleneck for software and cognitive radio receivers. However, the performance of the TIΣΔ architecture is limited by the unavoidable gain and offset mismatches resulting from the manufacturing process. This paper presents a novel digital calibration method to compensate the gain and offset mismatch effect. The proposed method takes advantage of the reconstruction digital signal processing on each channel and requires only few logic components for implementation. The run time calibration is estimated to 10 and 15 clock cycles for offset cancellation and gain mismatch calibration respectively.

Keywords: sigma-delta, calibration, gain and offset mismatches, analog-to-digital conversion, time-interleaving.

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Authors: Parekhan M. Aljaff, Banaz O. Rasheed

Abstract:

The exact gain shape profile of erbium doped fiber amplifiers (EDFA`s) are depends on fiber length and Er3 ion densities. This paper optimized several of erbium doped fiber parameters to obtain high performance characteristic at pump wavelengths of λp= 980 nm and λs= 1550 nm for three different pump powers. The maximum gain obtained for pump powers (10, 30 and 50mw) is nearly (19, 30 and 33 dB) at optimizations. The required numerical aperture NA to obtain maximum gain becomes less when pump power increased. The amplifier gain is increase when Er+3doped near the center of the fiber core. The simulation has been done by using optisystem 5.0 software (CAD for Photonics, a license product of a Canadian based company) at 2.5 Gbps.

Keywords: EDFA, Erbium Doped Fiber, optimization OpticalAmplifiers.

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Authors: Seong-Ho Song, Ki-Seob Kim, Seon-Woo Lee, Seop-Hyeong Park

Abstract:

Based on a theoretical erbium-doped fiber amplifier (EDFA) model, we have proposed an application of disturbance observer(DOB) with proportional/integral/differential(PID) controller to EDFA for minimizing gain-transient time of wavelength -division-multiplexing (WDM) multi channels in optical amplifier in channel add/drop networks. We have dramatically reduced the gain-transient time to less than 30μsec by applying DOB with PID controller to the control of amplifier gain. The proposed DOB-based gain control algorithm for EDFA was implemented as a digital control system using TI's DSP(TMS320C28346) chip and experimental results of the system verify the excellent performance of the proposed gain control methodology.

Keywords: EDFA, Disturbance observer, gain control, WDM.

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Authors: M. Nageswara Rao

Abstract:

In this paper, a topology for high voltage gain half-bridge z-source inverter with low voltage stress on capacitors is proposed. The proposed inverter has only one impedance network. It can generate symmetric and asymmetric voltages with different magnitudes during both half-cycles. By selecting the duty cycle it can also produce conventional half-bridge inverter characteristics. It is used in special applications like, electrochemical and electro plating applications. Calculations of voltage ripple of capacitors, capacitors voltage stress inductors current ripple are presented. The proposed topology is simulated using PSCAD software and the simulated values are compared with the theoretical values.

Keywords: Half-bridge inverter, impedance network-source inverter, high voltage gain inverter, power system computer aided design.

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Authors: H. S. Haroyan, V. R. Tadevosyan

Abstract:

High gain broadband plasmonic slot nano-antenna has been considered. The theory of plasmonic slot nano-antenna (PSNA) has been developed. The analytical model takes into account also the electrical field inside the metal due to imperfectness of metal in optical range, as well as numerical investigation based on finite element method (FEM) has been realized. It should be mentioned that Yagi-Uda configuration improves directivity in the plane of structure. In contrast, in this paper the possibility of directivity improvement of proposed PSNA in perpendicular plane of structure by using reflection metallic surface placed under the slot in fixed distance has been demonstrated. It is well known that a directivity improvement brings to the antenna gain increasing. This method of diagram improving is also well known from RF antenna design theory. Moreover the improvement of directivity in the perpendicular plane gives more flexibility in such application as improving the light and atom, ion, molecule interactions by using such type of plasmonic slot antenna. By the analogy of dipole type optical antennas the widening of working wavelengths has been realized by using bowtie geometry of slots, which made the antenna broadband.

Keywords: Broadband antenna, high gain, slot nano-antenna, plasmonics.

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Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Nicholas D. Assimakis

Abstract:

In linear estimation, the traditional Kalman filter uses the Kalman filter gain in order to produce estimation and prediction of the n-dimensional state vector using the m-dimensional measurement vector. The computation of the Kalman filter gain requires the inversion of an m x m matrix in every iteration. In this paper, a variation of the Kalman filter eliminating the Kalman filter gain is proposed. In the time varying case, the elimination of the Kalman filter gain requires the inversion of an n x n matrix and the inversion of an m x m matrix in every iteration. In the time invariant case, the elimination of the Kalman filter gain requires the inversion of an n x n matrix in every iteration. The proposed Kalman filter gain elimination algorithm may be faster than the conventional Kalman filter, depending on the model dimensions.

Keywords: Discrete time, linear estimation, Kalman filter, Kalman filter gain.

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Authors: S. Kumaravel, B. Venkataramani

Abstract:

In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unity gain bandwidth (UGB) and lowering the Common mode (CM) gain. For the purpose of comparison, IRFC and EIRFC OTAs are implemented using UMC 90nm CMOS technology and studied through simulation. From the simulation, it is found that the DM gain and CM gain of EIRFC OTA is higher by 6dB and lower by 38dB respectively, compared to that of IRFC OTA for the same power and area. The slew rate of EIRFC OTA is also higher by a factor of 1.5.

Keywords: Cascode Amplifier, CMRR, gm/ID Methodology, Recycling, Slew Rate.

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Authors: H. Daoud Dammak, S. Bensalem, S. Zouari, M. Loulou

Abstract:

This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Keywords: CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization.

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Authors: Mohammad J. Almalkawi

Abstract:

In this communication, a low-cost circularly polarized wire antenna exhibiting improved gain performance for Dedicated Short Range Communications (DSRC), vehicle-to-vehicle (V2V) and vehicle-to-infrastructure (V2I) communications is presented. The proposed antenna comprises a Y-shaped quarterwavelength monopole antenna surrounded by two iterations of eight conductive arched walls acting as parasitic elements to enhance the overall antenna gain and to shape the radiation pattern in the H-plane. A hemispherical radome shell is added to protect the antenna structure and its effect on the antenna performance is discussed. The designed antenna demonstrates antenna gain of 8.2 dB with omnidirectional far-field radiation pattern in the H-plane. The gain of the proposed antenna is also compared with the characteristic of the stand-alone Y-shaped monopole to highlight the advantages of the proposed approach.

Keywords: Circularly polarized, dedicated short-range communication, omnidirectional pattern, vehicle-to-infrastructure (V2I), vehicle-to-vehicle (V2V), Y-shaped wire monopole antenna.

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Authors: K. Melouk, M. Dellakrachai

Abstract:

Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.

Keywords: Laser, quantum well, semiconductor, InGaAsP.

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Authors: Ahmad H. Abdelgwad

Abstract:

Microstrip patch antennas are widely used in many wireless communication applications because of their various advantages such as light weight, compact size, inexpensive, ease of fabrication and high reliability. However, narrow bandwidth and low gain are the major drawbacks of microstrip antennas. The radiation properties of microstrip antenna is affected by many designing factors like feeding techniques, manufacturing substrate, patch and ground structure. This manuscript presents a review of the most popular gain and bandwidth enhancement methods of microstrip antenna and reports a brief description of its feeding techniques.

Keywords: Gain and bandwidth enhancement, slotted patch, parasitic patch, electromagnetic band gap, defected ground, feeding techniques.

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Authors: The Nan Chang, Ping-Tang Yu, Jyun-Ming Lin

Abstract:

A triple band circularly polarized antenna covering 1.17, 1.22, and 1.57 GHz is presented. To extend to the triple-band operation, we need to add one more ring while maintaining the mechanism to independently control each ring. The inset-part in the feeding scheme is used to excite the band at 1.22 GHz, while the proximate-part of the feeding scheme is used to excite not only the band at 1.57 GHz but also the band at 1.17 GHz. This is achieved by up-vertically coupled with one ring to radiate at 1.57 GHz and down-vertically coupled another ring to radiate at 1.17 GHz. It is also noted that the inset-part in our feeding scheme is by horizontal coupling. Furthermore, to increase the gain at all three bands, three air-layers are added to make the total height of the antenna be 7.8 mm. The total thickness of the three air-layers is 3 mm. The gains of the three bands are all greater than 5 dBiC after adding the air-layers.

Keywords: Circular polarization, global position system, triband antenna, high gain.

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Authors: Raheleh Hedayati, Sanaz Haddadian, Hooman Nabovati

Abstract:

A 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in a 0.18-μm CMOS technology with a 1.8V supply, is presented. Current bleeding (charge injection) technique has been used to increase the conversion gain and the linearity of the mixer. The proposed mixer provides 10.75 dB conversion gain ( C G ) with 14.3mw total power consumption. The IIP3 and 1-dB compression point of the mixer are 8dbm and -4.6dbm respectively, at 300 MHz IF frequencies. Comparing the current design against the conventional mixer design, demonstrates better performance in the conversion gain, linearity, noise figure and port-to-port isolation.

Keywords: Mixer, Gilbert Cell, Charge Injection, RFIC, CMOSTechnology.

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Authors: F. Rahmani, F. Razaghian, A. R. Kashaninia

Abstract:

This article proposes a new method for application in communication circuit systems that increase efficiency, PAE, output power and gain in the circuit. The proposed method is based on a combination of switching class-E and class-J and has been termed class-EJ. This method was investigated using both theory and simulation to confirm ∼72% PAE and output power of >39dBm. The combination and design of the proposed power amplifier accrues gain of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit was designed using MOSFET and high power transistors. The loadand source-pull method achieved the best input and output networks using lumped elements. The proposed technique was investigated for fundamental and second harmonics having desirable amplitudes for the output signal.

Keywords: Power Amplifier (PA), GaN HEMT, Class-J and Class-E, High Efficiency.

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