Search results for: drain-induced barrier lowering (DIBL)

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

Abstract:

In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: M. Khaouani, A. Guen-Bouazza, B. Bouazza, Z. Kourdi

Abstract:

The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable I_ON/I_OFF ratio of (10⁴) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords: GAA, SILVACO, QUANTUM, MOSFETs.

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Authors: Cheng-Hsien Chang, Jyi-Tsong Lin, Po-Hsieh Lin, Hung-Pei Hsu, Chan-Hsiang Chang, Ming-Tsung Shih, Shih-Chuan Tseng, Min-Yan Lin

Abstract:

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also investigated. According to the 3-D numerical simulation, the proposed structure has a firm structure, an acceptable short channel effect (SCE), a reduced series resistance, an increased on state drain current (I on) and a large normalized I DS. Furthermore, the structure can also improve corner effect and reduce self-heating effect due to the extended body. Our results show that the EBFinFET is excellent for nanoscale device.

Keywords: SOI, FinFET, tri-gate, self-heating effect.

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Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2. 

Keywords: Electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission.

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Authors: T. Valdbjørn Rasmussen

Abstract:

Design criteria for achieving an acceptable indoor radon concentration are presented in this paper. The paper suggests three design criteria. These criteria have to be considered at the early stage of the building design phase to meet the latest recommendations from the World Health Organization in most countries. The three design criteria are; first, establishing a radon barrier facing the ground; second, lowering the air pressure in the lower zone of the slab on ground facing downwards; third, diluting the indoor air with outdoor air. The first two criteria can prevent radon from infiltrating from the ground, and the third criteria can dilute the indoor air. By combining these three criteria, the indoor radon concentration can be lowered achieving an acceptable level. In addition, a cheap and reliable method for measuring the radon concentration in the indoor air is described. The provision on radon in the Danish Building Regulations complies with the latest recommendations from the World Health Organization. Radon can cause lung cancer and it is not known whether there is a lower limit for when it is not harmful to human beings. Therefore, it is important to reduce the radon concentration as much as possible in buildings. Airtightness is an important factor when dealing with buildings. It is important to avoid air leakages in the building envelope both facing the atmosphere, e.g. in compliance with energy requirements, but also facing the ground, to meet the requirements to ensure and control the indoor environment. Infiltration of air from the ground underneath a building is the main providing source of radon to the indoor air.

Keywords: Radon, natural radiation, barrier, pressure lowering, ventilation.

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Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (
), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K
respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.

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Authors: Hakim Aguedal, Hafida Hentit, Abdallah Aziz, Djillali Rida Merouani, Abdelkader Iddou

Abstract:

The major environmental risk of soil pollution is the contamination of groundwater by infiltration of organic and inorganic pollutants which can cause a serious menace. To prevent this risk and to protect the groundwater, we proceeded in this study to test the reliability of a biosolid as barrier to prevent the migration of very dangerous pollutants as ‘Cadmium’ through the different soil layers. In this study, we tried to highlight the effect of several parameters such as: turbidity (different cycle of Hydration/Dehydration), rainfall, effect of initial Cd(II) concentration and the type of soil. These parameters allow us to find the most effective manner to integrate this barrier in the soil. From the results obtained, we found a significant effect of the barrier. Indeed, the recorded passing quantities are lowest for the highest rainfall; we noted also that the barrier has a better affinity towards higher concentrations; the most retained amounts of cadmium has been in the top layer of the two types of soil tested, while the lowest amounts of cadmium are recorded in the bottom layers of soils.

Keywords: Adsorption of Cadmium, Barrier, Groundwater Pollution, Protection.

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Authors: Paniz Tafakori, Ali A. Orouji

Abstract:

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Keywords: Short-channel effects (SCEs), Dual material gate (DMG), Triple material gate (TMG), Pentamerous material gate (PMG).

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Authors: W. J. Stępniowski, W. Florkiewicz, M. Norek, M. Michalska-Domańska, E. Kościuczyk, T. Czujko

Abstract:

In this paper, two options of anodic alumina barrier layer thinning have been demonstrated. The approaches varied with the duration of the voltage step. It was found that too long step of the barrier layer thinning process leads to chemical etching of the nanopores on their top. At the bottoms pores are not fully opened what is disadvantageous for further applications in nanofabrication. On the other hand, while the duration of the voltage step is controlled by the current density (value of the current density cannot exceed 75% of the value recorded during previous voltage step) the pores are fully opened. However, pores at the bottom obtained with this procedure have smaller diameter, nevertheless this procedure provides electric contact between the bare aluminum (substrate) and electrolyte, what is suitable for template assisted electrodeposition, one of the most cost-efficient synthesis method in nanotechnology.

Keywords: Anodic aluminum oxide, anodization, barrier layer thinning, nanopores.

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Authors: Zainul Huda

Abstract:

This presentation reviews recent advances in superalloys and thermal barrier coating (TBC) for application in hot sections of energy-efficient gas-turbine engines. It has been reviewed that in the modern combined-cycle gas turbines (CCGT) applying single-crystal energy materials (SC superalloys) and thermal barrier coatings (TBC), and – in one design – closed-loop steam cooling, thermal efficiency can reach more than 60%. These technological advancements contribute to profitable and clean power generation with reduced emission. Alternatively, the use of advanced superalloys (e.g. GTD-111 superalloy, Allvac 718Plus superalloy) and advanced thermal barrier coatings (TBC) in modern gas-turbines has been shown to yield higher energy-efficiency in power generation.

Keywords: Energy materials, gas turbine engines, superalloy, thermal barrier coating

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Authors: D. Kliaugaitė, J. K, Staniškis

Abstract:

In this study tree types of multilayer gas barrier plastic packaging films were compared using life cycle assessment as a tool for resource efficient and environmentally low-impact materials selection. The first type of multilayer packaging film (PET-AlOx/LDPE) consists of polyethylene terephthalate with barrier layer AlOx (PET-AlOx) and low density polyethylene (LDPE). The second type of polymer film (PET/PE-EVOH-PE) is made of polyethylene terephthalate (PET) and co-extrusion film PE-EVOH-PE as barrier layer. And the third one type of multilayer packaging film (PET-PVOH/LDPE) is formed from polyethylene terephthalate with barrier layer PVOH (PET-PVOH) and low density polyethylene (LDPE).

All of analyzed packaging has significant impact to resource depletion, because of raw materials extraction and energy use and production of different kind of plastics. Nevertheless the impact generated during life cycle of functional unit of II type of packaging (PET/PE-EVOH-PE) was about 25% lower than impact generated by I type (PET-AlOx/LDPE) and III type (PET-PVOH/LDPE) of packaging.

Result revealed that the contribution of different gas barrier type to the overall environmental problem of packaging is not significant. The impact are mostly generated by using energy and materials during raw material extraction and production of different plastic materials as plastic polymers material as PE, LDPE and PET, but not gas barrier materials as AlOx, PVOH and EVOH.

The LCA results could be useful in different decision-making processes, for selecting resource efficient and environmentally low-impact materials.

Keywords: Polymer packaging, life cycle assessment, resource efficiency.

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Authors: Adebomi M. Oyewumi, Sunday Amaize

Abstract:

The study was designed to examine the barriers to marital expectations among unmarried persons with hearing impairment in Oyo State, Nigeria. Descriptive survey research design was adopted. Purposive sampling technique was used to select one hundred participants made up forty-four (44) males and fifty-six (56) females, all with varying degrees of hearing impairment. Eight research questions were raised and answered. The instrument used was Marital Expectations Scale with reliability coefficient of 0.86. Data was analyzed using descriptive statistics tools of frequency count and simple percentage as well as inferential statistics tools of T-TEST and ANOVA. The findings revealed that there was a significant relationship existing among the main identified barriers (environmental barrier, communication barrier, hearing loss, unemployment and poor sexuality education) to the marital expectations of unmarried persons with hearing impairment. The joint contribution of the independent variables (identified barriers) to the dependent variable (marital expectations) was significant, F = 5.842, P < 0.05, accounting for about 89% of the variance. The relative contribution of the identified barriers to marital expectations of unmarried persons with hearing impairment is as follows: environmental barrier (β = 0.808, t = 5.176, P < 0.05), communication barrier (β = 0.533, t = 3.305, P < 0.05), hearing loss (β = 0.550, t = 2.233, P < 0.05), unemployment (β = 0.431, t = 2.102, P < 0.05), poor sexuality education (β = 0.361, t = 1.985, P < 0.05). Environmental barrier proved to be the most potent contributor to the poor marital expectations among unmarried persons with hearing impairment. Therefore, it is recommended that society dismantles the nagging environmental barrier through positive identification with individuals suffering from hearing impairment. In this connection, members of society should change their negative attitudes and do away with all the wrong notions about the marital ability of individuals with hearing impairment.

Keywords: Hearing impairment, marriage, marital expectations, barrier.

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Authors: Seung-Kyung Kye, Sang-Seung Lee, Dooyong Cho, Sun-Kyu Park

Abstract:

Although many studies on the assembly technology of the bridge construction have dealt mostly with on the pier, girder or the deck of the bridge, studies on the prefabricated barrier have rarely been performed. For understanding structural characteristics and application of the concrete barrier in the modular bridge, which is an assembly of structure members, static loading test was performed. Structural performances as a road barrier of the three methods, conventional cast-in-place(ST), vertical bolt connection(BVC) and horizontal bolt connection(BHC) were evaluated and compared through the analyses of load-displacement curves, strain curves of the steel, concrete strain curves and the visual appearances of crack patterns. The vertical bolt connection(BVC) method demonstrated comparable performance as an alternative to conventional cast-in-place(ST) while providing all the advantages of prefabricated technology. Necessities for the future improvement in nuts enforcement as well as legal standard and regulation are also addressed.

Keywords: Modular Bridge, Concrete Barrier, Bolt Connection

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Authors: Yaser E. Hawas, Md. Didarul Alam

Abstract:

Rollover crashes are complex events entailing interactions of driver, road, vehicle, and environmental factors. The primary objective of this paper is to present an empirical approach that can be used to characterise the rollover crashes and to identify some of the important factors that may lead to rollovers. Among the studied factors are the vehicle types and the rollover occurrence rate after hitting various barrier types. The carried analysis indicated that 71% of the rollover crashes occurred after impact and the type of rollover initiation is “trip/turn over” (nearly 50%). It was also found that light trucks (LTVs) vehicles are more likely to rollover than the sedan vehicles. Barrier impacts are associated with increased incidence of rollover.

Keywords: Empirical, hitting barrier, in-depth crash investigation, rollover, severe crash.

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Authors: Li-Li Li, Jinghai Feng, Lixin Song

Abstract:

This paper evaluates the dividend payments for general claim size distributions in the presence of a dividend barrier. The surplus of a company is modeled using the classical risk process perturbed by diffusion, and in addition, it is assumed to accrue interest at a constant rate. After presenting the integro-differential equation with initial conditions that dividend payments satisfies, the paper derives a useful expression of the dividend payments by employing the theory of Volterra equation. Furthermore, the optimal value of dividend barrier is found. Finally, numerical examples illustrate the optimality of optimal dividend barrier and the effects of parameters on dividend payments.

Keywords: Dividend payout, Integro-differential equation, Jumpdiffusion model, Volterra equation

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Authors: Vidyasagar H. N., S. Gopal Prakash, Shivrudraiah, K. V. Sharma

Abstract:

Thermally insulating ceramic coatings also known as thermal barrier coatings (TBCs) have been essential technologies to improve the performance and efficiency of advanced gas turbines in service at extremely high temperatures. The damage mechanisms of air-plasma sprayed YSZ thermal barrier coatings (TBC) with various microstructures were studied by microscopic techniques after thermal cycling. The typical degradation of plasma TBCs that occurs during cyclic furnace testing of an YSZ and alumina coating on a Titanium alloy are analyzed. During the present investigation the effects of topcoat thickness, bond coat oxidation, thermal cycle lengths and test temperature are investigated using thermal cycling. These results were correlated with stresses measured by a spectroscopic technique in order to understand specific damage mechanism. The failure mechanism of former bond coats was found to involve fracture initiation at the thermally grown oxide (TGO) interface and at the TGO bond coat interface. The failure mechanism of the YZ was found to involve combination of fracture along the interface between TGO and bond coat.

Keywords: Thermal barrier coatings, thermal loading.

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Authors: B. Daee, H. M. El Naggar

Abstract:

This paper presents an experimental study on structural performance of an innovative noise barrier consisting of poly-block, light polyurethane foam (LPF) and polyurea. This wall system (flexi-wall) is intended to be employed as a vertical extension to existing sound barriers in an accelerated construction method. To aid in the wall design, several mechanical tests were conducted on LPF specimens and two full-scale walls were then fabricated employing the same LPF material. The full-scale walls were subjected to lateral loading in order to establish their lateral resistance. A cyclic fatigue test was also performed on a full-scale flexi-wall in order to evaluate the performance of the wall under a repetitive loading condition. The result of the experiments indicated the suitability of flexi-wall in accelerated construction and confirmed that the structural performance of the wall system under lateral loading is satisfactory for the sound barrier application. The experimental results were discussed and a preliminary design procedure for application of flexi-wall in sound barrier applications was also developed.

Keywords: Noise barrier, Polyurethane Foam, Accelerated construction, Full-scale experiment.

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Authors: R. Osada, S. Ogata, T. Segawa

Abstract:

Dielectric barrier discharge plasma actuators (DBD-PAs) have been developed for active flow control devices. However, it is necessary to reduce ozone produced by DBD toward practical applications using DBD-PAs. In this study, variations of ozone concentration, flow velocity, power consumption were investigated by changing exposed electrodes of DBD-PAs. Two exposed electrode prototypes were prepared: span-type with exposed electrode width of 0.1 mm, and normal-type with width of 5 mm. It was found that span-type shows lower power consumption and higher flow velocity than that of normal-type at V_p-p = 4.0-6.0 kV. Ozone concentration of span-type higher than normal-type at V_p-p = 4.0-8.0 kV. In addition, it was confirmed that catalyst located in downstream from the exposed electrode can reduce ozone concentration between 18 and 42% without affecting the induced flow.

Keywords: Dielectric barrier discharge plasma actuators, ozone diffusion, PIV measurement, power consumption.

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Authors: Bunphot Paosombat, Thitiporn Suttikul, Sumaeth Chavadej

Abstract:

The effects of ethylene (C2H4) feed position and O2/C2H4 feed molar ratio on ethylene epoxidation in a parallel dielectric barrier discharge (DBD) were studied. The results showed that the ethylene feed position fraction of 0.5 and the feed molar ratio of O2/C2H4 of 0.2:1 gave the highest EO selectivity of 34.3% and the highest EO yield of 5.28% with low power consumptions of 2.11×10-16 Ws/molecule of ethylene converted and 6.34×10-16 Ws/molecule of EO produced when the DBD system was operated under the best conditions: an applied voltage of 19 kV, an input frequency of 500 Hz and a total feed flow rate of 50 cm3/min. The separate ethylene feed system provided much higher epoxidation activity as compared to the mixed feed system which gave EO selectivity of 15.5%, EO yield of 2.1% and the power consumption of EO produced of 7.7×10-16 Ws/molecule.

Keywords: Dielectric Barrier Discharge, C2H4 Feed Position, Epoxidation, Ethylene Oxide

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Authors: J. Kala, P. Hradil, V. Salajka

Abstract:

Reinforced concrete crash barriers used in road traffic must meet a number of criteria. Crash barriers are laid lengthwise, one behind another, and joined using specially designed steel locks. While developing BSV reinforced concrete crash barriers (type ŽPSV), experiments and calculations aimed to optimize the shape of a newly designed lock and the reinforcement quantity and distribution in a crash barrier were carried out. The tension carrying capacity of two parallelly joined locks was solved experimentally. Based on the performed experiments, adjustments of nonlinear properties of steel were performed in the calculations. The obtained results served as a basis to optimize the lock design using a computational model that takes into account the plastic behaviour of steel and the influence of the surrounding concrete [6]. The response to the vehicle impact has been analyzed using a specially elaborated complex computational model, comprising both the nonlinear model of the damping wall or crash barrier and the detailed model of the vehicle [7].

Keywords: Crash Barrier, impact, static analysis, concrete nonlinear model.

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Authors: Hiroyuki Nishida, Taku Nonomura, Takashi Abe

Abstract:

Wall-surface jet induced by the dielectric barrier discharge (DBD) has been proposed as an actuator for active flow control in aerodynamic applications. Discharge plasma evolution of the DBD plasma actuator was simulated based on a simple fluid model, in which the electron, one type of positive ion and negative ion were taken into account. Two-dimensional simulation was conducted, and the results are in agreement with the insights obtained from experimental studies. The simulation results indicate that the discharge mode changes depending on applied voltage slope; when the applied voltage is positive-going with high applied voltage slope, the corona-type discharge mode turns into the streamer-type discharge mode and the threshold voltage slope is around 300 kV/ms in this simulation. The characteristics of the electrohydrodynamic (EHD) force, which is the source of the wall-surface jet, also change depending on the discharge mode; the tentative peak value of the EHD force during the positive-going voltage phase is saturated by the periodical formation of the streamer-type discharge.

Keywords: Dielectric barrier discharge, Plasma actuator, Fluid simulation.

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Authors: Z. X. Chen, N. Singh, D.-L. Kwong

Abstract:

This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.

Keywords: NiSi , fully-silicided (FUSI) gate, vertical siliconnanowire (SiNW), CMOS compatible.

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Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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Authors: Sh. Hamada, N. Burtebayev, A. Amar, N. Amangieldy

Abstract:

the aim of that work is to study the proton transfer phenomenon which takes place in the elastic scattering of 12C on 11B at energies near the coulomb barrier. This reaction was studied at four different energies 16, 18, 22, 24 MeV. The experimental data of the angular distribution at these energies were compared to the calculation prediction using the optical potential codes such as ECIS88 and SPIVAL. For the raising in the cross section at backward angles due to the transfer process we could use Distorted Wave Born Approximation (DWUCK5). Our analysis showed that SPIVAL code with l-dependent imaginary potential could be used effectively.

Keywords: Transfer reaction, DWBA, Elastic Scattering, Optical Potential Codes.

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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Authors: Michael Tupý, Vít Petránek

Abstract:

The paper is focused on testing of the poly(vinyl butyral) (PVB) layer which had the function of a CO₂ insulating protection against concrete and mortar carbonation. The barrier efficiency of PVB was verified by the measurement of diffusion characteristics. Two different types of PVB were tested; original extruded PVB sheet and PVB sheet made from PVB dispersion which was obtained from recycled windshields. The work deals with the testing CO₂ diffusion when polymer sheets were exposed to a CO₂ atmosphere (10% v/v CO₂) with 0% RH. The excellent barrier capability against CO₂ permeability of original and also recycled types of PVB layers was observed. This application of PVB waste can bring advantageous use in civil engineering and significant environmental contribution.

Keywords: Windshield, Poly(vinyl butyral), Mortar, Diffusion, Carbonatation, Polymer waste.

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