Search results for: Infrared Diode
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 396

Search results for: Infrared Diode

396 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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395 The Effect of the Thermal Temperature and Injected Current on Laser Diode 808 nm Output Power

Authors: Hassan H. Abuelhassan, M. Ali Badawi, Abdelrahman A. Elbadawi, Adam A. Elbashir

Abstract:

In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined.

Keywords: Laser diode, light amplification, injected current, output power.

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394 Frequency Reconfigurable Multiband Patch Antenna Using PIN-Diode for ITS Applications

Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, V. S. Tripathi, Shivesh Tripathi

Abstract:

A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation.

Keywords: ITS, multiband antenna, PIN-diode, reconfigurable.

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393 Experimental Parametric Investigation of Temperature Effects on 60W-QCW Diode Laser

Authors: E. Farsad, S. P. Abbasi, A. Goodarzi, M. S. Zabihi

Abstract:

Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particularly for medical applications.

Keywords: diode laser, experimentally, temperature, wavelength

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392 Evaluation of Heterogeneity of Paint Coating on Metal Substrate Using Laser Infrared Thermography and Eddy Current

Authors: S. Mezghani, E. Perrin, J. L Bodnar, J. Marthe, B. Cauwe, V. Vrabie

Abstract:

Non contact evaluation of the thickness of paint coatings can be attempted by different destructive and nondestructive methods such as cross-section microscopy, gravimetric mass measurement, magnetic gauges, Eddy current, ultrasound or terahertz. Infrared thermography is a nondestructive and non-invasive method that can be envisaged as a useful tool to measure the surface thickness variations by analyzing the temperature response. In this paper, the thermal quadrupole method for two layered samples heated up with a pulsed excitation is firstly used. By analyzing the thermal responses as a function of thermal properties and thicknesses of both layers, optimal parameters for the excitation source can be identified. Simulations show that a pulsed excitation with duration of ten milliseconds allows obtaining a substrate-independent thermal response. Based on this result, an experimental setup consisting of a near-infrared laser diode and an Infrared camera was next used to evaluate the variation of paint coating thickness between 60 μm and 130 μm on two samples. Results show that the parameters extracted for thermal images are correlated with the estimated thicknesses by the Eddy current methods. The laser pulsed thermography is thus an interesting alternative nondestructive method that can be moreover used for nonconductive substrates.

Keywords: Nondestructive, paint coating, thickness, infrared thermography, laser, heterogeneity.

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391 Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode

Authors: Alexey V. Klyuev, Arkady V. Yakimov, Mikhail I. Ryzhkin, Andrey V. Klyuev

Abstract:

Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal.

Keywords: Current-voltage characteristic, fluctuations, mixer, Schottky diode, 1/f noise.

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390 Design of Reconfigurable 2 Way Wilkinson Power Divider for WLAN Applications

Authors: G. Kalpanadevi, S. Ravimaran, M. Shanmugapriya

Abstract:

A Reconfigurable Wilkinson power divider is proposed in this paper. In existing system only a limited number of bandwidth is used at the output ports, in the proposed Wilkinson power divider different band of frequencies are obtained by using PIN diode. By tuning the PIN diode, different frequencies are achieved. The size of the power divider is reduced for the operating frequency and increases the fractional bandwidth.

Keywords: Isolation loss, PIN diode, Reconfigurable Wilkinson power divider and WLAN applications.

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389 Probabilistic Bayesian Framework for Infrared Face Recognition

Authors: Moulay A. Akhloufi, Abdelhakim Bendada

Abstract:

Face recognition in the infrared spectrum has attracted a lot of interest in recent years. Many of the techniques used in infrared are based on their visible counterpart, especially linear techniques like PCA and LDA. In this work, we introduce a probabilistic Bayesian framework for face recognition in the infrared spectrum. In the infrared spectrum, variations can occur between face images of the same individual due to pose, metabolic, time changes, etc. Bayesian approaches permit to reduce intrapersonal variation, thus making them very interesting for infrared face recognition. This framework is compared with classical linear techniques. Non linear techniques we developed recently for infrared face recognition are also presented and compared to the Bayesian face recognition framework. A new approach for infrared face extraction based on SVM is introduced. Experimental results show that the Bayesian technique is promising and lead to interesting results in the infrared spectrum when a sufficient number of face images is used in an intrapersonal learning process.

Keywords: Face recognition, biometrics, probabilistic imageprocessing, infrared imaging.

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388 Measurement of I-V Characteristics of a PtSi/p-Si Schottky Barrier Diode at low Temperatures

Authors: Somayeh Gholami, Meysam Khakbaz

Abstract:

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height (), ideality factor (n) and series resistance () were found to be 0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V characteristics in the temperature range of 85-136 K the electrical parameters were observed to have strong dependency on temperature. The increase of barrier height and decrease of ideality factor with increasing temperature is attributed to the existence of barrier height inhomogeneities in the silicide-semiconductor structure.

Keywords: Schottky diode, barrier height, series resistance, I-V, barrier height inhomogeneities.

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387 Powerful Laser Diode Matrixes for Active Vision Systems

Authors: Dzmitry M. Kabanau, Vladimir V. Kabanov, Yahor V. Lebiadok, Denis V. Shabrov, Pavel V. Shpak, Gevork T. Mikaelyan, Alexandr P. Bunichev

Abstract:

This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

Keywords: Active vision systems, laser diode matrixes, thermal properties, radiation divergence.

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386 Parametric Investigation of Diode and CO2 Laser in Direct Metal Deposition of H13 Tool Steel on Copper Substrate

Authors: M. Khalid Imran, Syed Masood, Milan Brandt, Sudip Bhattacharya, Jyotirmoy Mazumder

Abstract:

In the present investigation, H13 tool steel has been deposited on copper alloy substrate using both CO2 and diode laser. A detailed parametric analysis has been carried out in order to find out optimum processing zone for coating defect free H13 tool steel on copper alloy substrate. Followed by parametric optimization, the microstructure and microhardness of the deposited clads have been evaluated. SEM micrographs revealed dendritic microstructure in both clads. However, the microhardness of CO2 laser deposited clad was much higher compared to diode laser deposited clad.

Keywords: CO2 laser, Diode laser, Direct Metal Deposition, Microstructure, Microhardness, Porosity.

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385 Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode

Authors: Muhammad Tahir, Muhammad H. Sayyad, Dil N. Khan, Fazal Wahab

Abstract:

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior that confirms the formation of diode. The diode parameters such as rectification ratio (RR), turn on voltage (Vturn on), reverse saturation current (I0), ideality factor (n), barrier height ( b f ), series resistance (Rs) and shunt resistance (Rsh) are determined from I-V curves using Schottky equations. These values of these parameters are also extracted and verified by applying Cheung’s functions. The conduction mechanisms are explained from the forward bias I-V characteristics using the power law.

Keywords: Electrical properties, Organic/inorganic heterojunction diode, Methyl Orange, Cheungs Functions

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384 A Comparative Study of PV Models in Matlab/Simulink

Authors: Mohammad Seifi, Azura Bt. Che Soh, Noor Izzrib. Abd. Wahab, Mohd Khair B. Hassan

Abstract:

Solar energy has a major role in renewable energy resources. Solar Cell as a basement of solar system has attracted lots of research. To conduct a study about solar energy system, an authenticated model is required. Diode base PV models are widely used by researchers. These models are classified based on the number of diodes used in them. Single and two-diode models are well studied. Single-diode models may have two, three or four elements. In this study, these solar cell models are examined and the simulation results are compared to each other. All PV models are re-designed in the Matlab/Simulink software and they examined by certain test conditions and parameters. This paper provides comparative studies of these models and it tries to compare the simulation results with manufacturer-s data sheet to investigate model validity and accuracy. The results show a four- element single-diode model is accurate and has moderate complexity in contrast to the two-diode model with higher complexity and accuracy

Keywords: Fill Factor (FF), Matlab/Simulink, Maximum PowerPoint (MPP), Maximum Power Point Tracker (MPPT), Photo Voltaic(PV), Solar cell, Standard Test Condition (STC).

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383 Investigation of the Electronic Properties of Au/methyl-red/Ag Surface type Schottky Diode by Current-Voltage Method

Authors: Zubair Ahmad, Muhammad Hassan Sayyad

Abstract:

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.

Keywords: Surface type Schottky diodes, Methyl-red, Currentvoltage method

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382 Simulation of a Boost PFC Converter with Electro Magnetic Interference Filter

Authors: P. Ram Mohan, M. Vijaya Kumar, O. V. Raghava Reddy

Abstract:

This paper deals with the simulation of a Boost Power Factor Correction (PFC) Converter with Electro Magnetic Interference (EMI) Filter. The diode rectifier with output capacitor gives poor power factor. The Boost Converter of PFC Circuit is analyzed and then simulated with diode rectifier. The Boost PFC Converter with EMI Filter is simulated for resistive load. The power factor is improved using the proposed converter.

Keywords: Boost Converter, Power Factor Correction, Electro Magnetic Interference, Diode Rectifier

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381 Compact Tunable 10 W picosecond Sourcebased on Yb-doped Fiber Amplification of Gain Switch Laser Diode

Authors: Hongjun Liu, Cunxiao Gao, Jintao Tao, Wei Zhao, Yishan Wang

Abstract:

A compact tunable 10 W picosecond source based on Yb-doped fiber amplification of gain switch laser diode has been demonstrated. A gain switch semiconductor laser diode was used as the seed source, and a multi-stage single mode Yb-doped fiber preamplifier was combined with two large mode area double-clad Yb-doped fiber main amplifiers to construct the amplification system. The tunable pulses with high stability and excellent beam quality (M2<1.2) of 10 W average power 150 ps pulse duration at 1 MHz repetition rate were obtained. The central wavelength with the line width of 2.5-3 nm was tunable from 1053 nm to 1073 nm.

Keywords: Fiber laser, fiber amplifier, picosecond laser, highpower laser

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380 Device for 3D Analysis of Basic Movements of the Lower Extremity

Authors: Jiménez Villanueva Mayra Alejandra, Ortíz Casallas Diana Carolina, Luengas Contreras Lely Adriana

Abstract:

This document details the process of developing a wireless device that captures the basic movements of the foot (plantar flexion, dorsal flexion, abduction, adduction.), and the knee movement (flexion). It implements a motion capture system by using a hardware based on optical fiber sensors, due to the advantages in terms of scope, noise immunity and speed of data transmission and reception. The operating principle used by this system is the detection and transmission of joint movement by mechanical elements and their respective measurement by optical ones (in this case infrared). Likewise, Visual Basic software is used for reception, analysis and signal processing of data acquired by the device, generating a 3D graphical representation in real time of each movement. The result is a boot in charge of capturing the movement, a transmission module (Implementing Xbee Technology) and a receiver module for receiving information and sending it to the PC for their respective processing. The main idea with this device is to help on topics such as bioengineering and medicine, by helping to improve the quality of life and movement analysis.

Keywords: abduction, adduction, A / D converter, Autodesk 3DMax, Infrared Diode, Driver, extension, flexion, Infrared LEDs, Interface, Modeling OPENGL, Optical Fiber, USB CDC(Communications Device Class), Virtual Reality.

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379 Infrared Face Recognition Using Distance Transforms

Authors: Moulay A. Akhloufi, Abdelhakim Bendada

Abstract:

In this work we present an efficient approach for face recognition in the infrared spectrum. In the proposed approach physiological features are extracted from thermal images in order to build a unique thermal faceprint. Then, a distance transform is used to get an invariant representation for face recognition. The obtained physiological features are related to the distribution of blood vessels under the face skin. This blood network is unique to each individual and can be used in infrared face recognition. The obtained results are promising and show the effectiveness of the proposed scheme.

Keywords: Face recognition, biometrics, infrared imaging.

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378 Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (ION / IOFF) of 2.66 × 1014 (ION at VGS=1.5V, VDS=1V and IOFF at VGS=0V, VDS=1V) for gate length of 20nm and HfO2 as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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377 Correction of Infrared Data for Electrical Components on a Board

Authors: Seong-Ho Song, Ki-Seob Kim, Seop-Hyeong Park, Seon-Woo Lee

Abstract:

In this paper, the data correction algorithm is suggested when the environmental air temperature varies. To correct the infrared data in this paper, the initial temperature or the initial infrared image data is used so that a target source system may not be necessary. The temperature data obtained from infrared detector show nonlinear property depending on the surface temperature. In order to handle this nonlinear property, Taylor series approach is adopted. It is shown that the proposed algorithm can reduce the influence of environmental temperature on the components in the board. The main advantage of this algorithm is to use only the initial temperature of the components on the board rather than using other reference device such as black body sources in order to get reference temperatures.

Keywords: Infrared camera, Temperature Data compensation, Environmental Ambient Temperature, Electric Component

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376 Advanced Pulse Width Modulation Techniques for Z Source Multi Level Inverter

Authors: B. M. Manjunatha, D. V. Ashok Kumar, M. Vijay Kumar

Abstract:

This paper proposes five level diode clamped Z source Inverter. The existing PWM techniques used for ZSI are restricted for two level. The two level Z Source Inverter have high harmonic distortions which effects the performance of the grid connected PV system. To improve the performance of the system the number of voltage levels in the output waveform need to be increased. This paper presents comparative analysis of a five level diode clamped Z source Inverter with different carrier based Modified Pulse Width Modulation techniques. The parameters considered for comparison are output voltage, voltage gain, voltage stress across switch and total harmonic distortion when powered by same DC supply. Analytical results are verified using MATLAB.

Keywords: Diode Clamped, Pulse Width Modulation, total harmonic distortion, Z Source Inverter.

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375 Uniform Overlapped Multi-Carrier PWM for a Six-Level Diode Clamped Inverter

Authors: S.Srinivas

Abstract:

Multi-level voltage source inverters offer several advantages such as; derivation of a refined output voltage with reduced total harmonic distortion (THD), reduction of voltage ratings of the power semiconductor switching devices and also the reduced electro-magnetic-interference problems etc. In this paper, new carrier-overlapped phase-disposition or sub-harmonic sinusoidal pulse width modulation (CO-PD-SPWM) and also the carrieroverlapped phase-disposition space vector modulation (CO-PDSVPWM) schemes for a six-level diode-clamped inverter topology are proposed. The principle of the proposed PWM schemes is similar to the conventional PD-PWM with a little deviation from it in the sense that the triangular carriers are all overlapped. The overlapping of the triangular carriers on one hand results in an increased number of switchings, on the other hand this facilitates an improved spectral performance of the output voltage. It is demonstrated through simulation studies that the six-level diode-clamped inverter with the use of CO-PD-SPWM and CO-PD-SVPWM proposed in this paper is capable of generating multiple levels in its output voltage. The advantages of the proposed PWM schemes can be derived to benefit, especially at lower modulation indices of the inverter and hence this aspect of the proposed PWM schemes can be well exploited in high power applications requiring low speeds of operation of the drive.

Keywords: Diode clamped inverter, Pulse width modulation, Six level inverter, carrier based PWM.

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374 ZnS and Graphene Quantum Dots Nanocomposite as Potential Electron Acceptor for Photovoltaics

Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 104 times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: Graphene, mobility, nanocomposites, photovoltaics, quantum dots, zinc sulphide.

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373 Parameters Estimation of Double Diode Solar Cell Model

Authors: M. R. AlRashidi, K. M. El-Naggar, M. F. AlHajri

Abstract:

A new technique based on Pattern search optimization is proposed for estimating different solar cell parameters in this paper. The estimated parameters are the generated photocurrent, saturation current, series resistance, shunt resistance, and ideality factor. The proposed approach is tested and validated using double diode model to show its potential. Performance of the developed approach is quite interesting which signifies its potential as a promising estimation tool.

Keywords: Solar Cell, Parameter Estimation, Pattern Search.

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372 SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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371 Simple and Advanced Models for Calculating Single-Phase Diode Rectifier Line-Side Harmonics

Authors: Hussein A. Kazem, Abdulhakeem Abdullah Albaloshi, Ali Said Ali Al-Jabri, Khamis Humaid AlSaidi

Abstract:

This paper proposes different methods for estimation of the harmonic currents of the single-phase diode bridge rectifier. Both simple and advanced methods are compared and the models are put into a context of practical use for calculating the harmonic distortion in a typical application. Finally, the different models are compared to measurements of a real application and convincing results are achieved.

Keywords: Single-phase rectifier, line side Harmonics

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370 Infrared Lightbox and iPhone App for Improving Detection Limit of Phosphate Detecting Dip Strips

Authors: H. Heidari-Bafroui, B. Ribeiro, A. Charbaji, C. Anagnostopoulos, M. Faghri

Abstract:

In this paper, we report the development of a portable and inexpensive infrared lightbox for improving the detection limits of paper-based phosphate devices. Commercial paper-based devices utilize the molybdenum blue protocol to detect phosphate in the environment. Although these devices are easy to use and have a long shelf life, their main deficiency is their low sensitivity based on the qualitative results obtained via a color chart. To improve the results, we constructed a compact infrared lightbox that communicates wirelessly with a smartphone. The system measures the absorbance of radiation for the molybdenum blue reaction in the infrared region of the spectrum. It consists of a lightbox illuminated by four infrared light-emitting diodes, an infrared digital camera, a Raspberry Pi microcontroller, a mini-router, and an iPhone to control the microcontroller. An iPhone application was also developed to analyze images captured by the infrared camera in order to quantify phosphate concentrations. Additionally, the app connects to an online data center to present a highly scalable worldwide system for tracking and analyzing field measurements. In this study, the detection limits for two popular commercial devices were improved by a factor of 4 for the Quantofix devices (from 1.3 ppm using visible light to 300 ppb using infrared illumination) and a factor of 6 for the Indigo units (from 9.2 ppm to 1.4 ppm) with repeatability of less than or equal to 1.2% relative standard deviation (RSD). The system also provides more granular concentration information compared to the discrete color chart used by commercial devices and it can be easily adapted for use in other applications.

Keywords: Infrared lightbox, paper-based device, phosphate detection, smartphone colorimetric analyzer.

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369 Functional Near Infrared Spectroscope for Cognition Brain Tasks by Wavelets Analysis and Neural Networks

Authors: Truong Quang Dang Khoa, Masahiro Nakagawa

Abstract:

Brain Computer Interface (BCI) has been recently increased in research. Functional Near Infrared Spectroscope (fNIRs) is one the latest technologies which utilize light in the near-infrared range to determine brain activities. Because near infrared technology allows design of safe, portable, wearable, non-invasive and wireless qualities monitoring systems, fNIRs monitoring of brain hemodynamics can be value in helping to understand brain tasks. In this paper, we present results of fNIRs signal analysis indicating that there exist distinct patterns of hemodynamic responses which recognize brain tasks toward developing a BCI. We applied two different mathematics tools separately, Wavelets analysis for preprocessing as signal filters and feature extractions and Neural networks for cognition brain tasks as a classification module. We also discuss and compare with other methods while our proposals perform better with an average accuracy of 99.9% for classification.

Keywords: functional near infrared spectroscope (fNIRs), braincomputer interface (BCI), wavelets, neural networks, brain activity, neuroimaging.

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368 Degradation in Organic Light Emitting Diodes

Authors: Saba Zare Zardareh, Farhad Akbari Boroumand

Abstract:

The objective is to fabricate organic light emitting diode and to study its degradation process in atmosphere condition in which PFO as an emitting material and PEDOT:PSS as a hole injecting material were used on ITO substrate. Thus degradation process of the OLED was studied upon its current-voltage characteristic. By fabricating this OLED and obtaining blue light and analysis of current-voltage characteristic during the time after fabrication, it was observed that the current of the OLED was exponentially decreased. Current reduction during the initial hours of fabrication was outstanding and after few days its reduction rate was dropped significantly, while the diode was dying.

Keywords: OLED, Degradation, Dark spot.

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367 Characterization of the In0.53Ga0.47As n+nn+ Photodetectors

Authors: Fatima Zohra Mahi, Luca Varani

Abstract:

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.

Keywords: Responsivity, detection parameter, photo-detectors, continuity equation, current noise.

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