Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 998

Search results for: High Voltage

998 Fault Location Identification in High Voltage Transmission Lines

Authors: Khaled M. El Naggar

Abstract:

This paper introduces a digital method for fault section identification in transmission lines. The method uses digital set of the measured short circuit current to locate faults in electrical power systems. The digitized current is used to construct a set of overdetermined system of equations. The problem is then constructed and solved using the proposed digital optimization technique to find the fault distance. The proposed optimization methodology is an application of simulated annealing optimization technique. The method is tested using practical case study to evaluate the proposed method. The accurate results obtained show that the algorithm can be used as a powerful tool in the area of power system protection.

Keywords: Optimization, estimation, faults, measurement, high voltage, simulated annealing.

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997 Improving the Voltage Level in High Voltage Direct Current Systems by Using Modular Multilevel Converter

Authors: G. Kishor Babu, B. Madhu Kiran

Abstract:

This paper presented an intend scheme of Modular-Multilevel-Converter (MMC) levels for move towering the practical conciliation flanked by the precision and divisional competence. The whole process is standard by a Thevenin-equivalent 133-level MMC model. Firstly the computation scheme of the fundamental limit imitation time step is offered to faithfully represent each voltage level of waveforms. Secondly the earlier industrial Improved Analytic Hierarchy Process (IAHP) is adopted to integrate the relative errors of all the input electrical factors interested in one complete virtual fault on each converter level. Thirdly the stable AC and DC ephemeral condition in virtual faults effects of all the forms stabilize and curve integral stand on the standard form. Finally the optimal MMC level will be obtained by the drown curves and it will give individual weights allowing for the precision and efficiency. And the competence and potency of the scheme are validated by model on MATLAB Simulink.

Keywords: Modular multilevel converter, improved analytic hierarchy process, ac and dc transient, high voltage direct current, voltage sourced converter.

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996 A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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995 Loss Analysis of Half Bridge DC-DC Converters in High-Current and Low-Voltage Applications

Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

Abstract:

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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994 High-Voltage Resonant Converter with Extreme Load Variation: Design Criteria and Applications

Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

Abstract:

The power converter that feeds high-frequency, highvoltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively lowfrequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid overvoltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: High-voltage transformer, Resonant converter, Softcommutation.

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993 A Topology for High Voltage Gain Half-Bridge Z-Source Inverter with Low Voltage Stress on Capacitors

Authors: M. Nageswara Rao

Abstract:

In this paper, a topology for high voltage gain half-bridge z-source inverter with low voltage stress on capacitors is proposed. The proposed inverter has only one impedance network. It can generate symmetric and asymmetric voltages with different magnitudes during both half-cycles. By selecting the duty cycle it can also produce conventional half-bridge inverter characteristics. It is used in special applications like, electrochemical and electro plating applications. Calculations of voltage ripple of capacitors, capacitors voltage stress inductors current ripple are presented. The proposed topology is simulated using PSCAD software and the simulated values are compared with the theoretical values.

Keywords: Half-bridge inverter, impedance network-source inverter, high voltage gain inverter, power system computer aided design.

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992 Low Voltage High Gain Linear Class AB CMOS OTA with DC Level Input Stage

Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

Abstract:

This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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991 A Novel Low Power Very Low Voltage High Performance Current Mirror

Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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990 Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers

Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: High voltage, IGBT, Solid states switch.

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989 High Speed and Ultra Low-voltage CMOS NAND and NOR Domino Gates

Authors: Yngvar Berg, Omid Mirmotahari

Abstract:

In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.

Keywords: Low-voltage, high-speed, NAND, NOR, CMOS.

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988 A High Precision Temperature Insensitive Current and Voltage Reference Generator

Authors: Kimberly Jane S. Uy, Patricia Angela Reyes-Abu, Wen Yaw Chung

Abstract:

A high precision temperature insensitive current and voltage reference generator is presented. It is specifically developed for temperature compensated oscillator. The circuit, designed using MXIC 0.5um CMOS technology, has an operating voltage that ranges from 2.6V to 5V and generates a voltage of 1.21V and a current of 6.38 ӴA. It exhibits a variation of ±0.3nA for the current reference and a stable output for voltage reference as the temperature is varied from 0°C to 70°C. The power supply rejection ratio obtained without any filtering capacitor at 100Hz and 10MHz is -30dB and -12dB respectively.

Keywords: Current reference, voltage reference, threshold voltage, temperature compensation, mobility.

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987 Soil Resistivity Structure and Its Implication on the Pole Grid Resistance for Transmission Lines

Authors: M. Nassereddine, J. Rizk, G. Nasserddine

Abstract:

High Voltage (HV) transmission lines are widely spread around residential places. They take all forms of shapes: concrete, steel, and timber poles. Earth grid always form part of the HV transmission structure, whereat soil resistivity value is one of the main inputs when it comes to determining the earth grid requirements. In this paper, the soil structure and its implication on the electrode resistance of HV transmission poles will be explored. In Addition, this paper will present simulation for various soil structures using IEEE and Australian standards to verify the computation with CDEGS software. Furthermore, the split factor behavior under different soil resistivity structure will be presented using CDEGS simulations.

Keywords: Earth Grid, EPR, High Voltage, Soil Resistivity Structure, Split Factor, Step Voltage, Touch Voltage.

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986 Soil Resistivity Data Computations; Single and Two - Layer Soil Resistivity Structure and Its Implication on Earthing Design

Authors: M. Nassereddine, J. Rizk, G. Nasserddine

Abstract:

Performing High Voltage (HV) tasks with a multi craft work force create a special set of safety circumstances. This paper aims to present vital information relating to when it is acceptable to use a single or a two-layer soil structure. Also it discusses the implication of the high voltage infrastructure on the earth grid and the safety of this implication under a single or a two-layer soil structure. A multiple case study is investigated to show the importance of using the right soil resistivity structure during the earthing system design.

Keywords: Earth Grid, EPR, High Voltage, Soil Resistivity Structure, Step Voltage, Touch Voltage.

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985 Optimization of a New Three-Phase High Voltage Power Supply for Industrial Microwaves Generators with N Magnetrons by Phase (Treated Case N=1)

Authors: M. Bassoui, M. Ferfra, M. Chraygane, M. Ould Ahmedou, N. Elghazal, A. Belhaiba

Abstract:

Currently, the High voltage power supply for microwave generators with one magnetron uses a single-phase transformer with magnetic shunt. To contribute in the development of technological innovation in industry of manufacturing of power supplies of magnetrons for microwaves, ovens for domestic or industrial use, this original work treats the optimization of a new three-phase high voltage power supply for industrial microwaves generators with N magnetrons by phase (Treated case N=1), from its modeling with Matlab-Simulink. The design of this power supply uses three π quadruple models equivalents of new three-phase transformer with magnetic shunt of each phase. Every one supplies at its output a voltage doubler cell composed of a capacitor and a diode that in its output supplies only one magnetron.  In this work we will define a strategy that aims to reduce the volume of the transformer and the weight and cost of the entire system of the high voltage power supply, while respecting the conditions recommended by the manufacturer, concerning the current flowing in each magnetron: (Imax <1.2 A, IAv ≈ 300 mA).

 

Keywords: Optimization, Three-phase transformer, Modeling, power supply, magnetrons, Matlab Simulink, High Voltage

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984 The Influence of Electrode Heating On the Force Generated On a High Voltage Capacitor with Asymmetrical Electrodes

Authors: Jiří Primas, Michal Malík, Darina Jašíková, Václav Kopecký

Abstract:

When a high DC voltage is applied to a capacitor with strongly asymmetrical electrodes, it generates a mechanical force that affects the whole capacitor. This is caused by the motion of ions generated around the smaller of the two electrodes and their subsequent interaction with the surrounding medium. If one of the electrodes is heated, it changes the conditions around the capacitor and influences the process of ionisation, thus changing the value of the generated force. This paper describes these changes and gives reasons behind them. Further the experimental results are given as proof of the ionic mechanism of the phenomenon.

Keywords: Capacitor with asymmetrical electrodes, Generated force, Heated electrode, High voltage.

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983 Designing and Manufacturing High Voltage Pulse Generator with Adjustable Pulse and Monitoring Current and Voltage: Food Processing Application

Authors: H. Mirzaee, A. Pourzaki

Abstract:

Using strength Pulse Electrical Field (PEF) in food industries is a non-thermal process that can deactivate microorganisms and increase penetration in plant and animals tissues without serious impact on food taste and quality. In this paper designing and fabricating of a PEF generator has been presented. Pulse generation methods have been surveyed and the best of them selected. The equipment by controller set can generate square pulse with adjustable parameters such as amplitude 1-5kV, frequency 0.1-10Hz, pulse width 10-100s, and duty cycle 0-100%. Setting the number of pulses, and presenting the output voltage and current waveforms on the oscilloscope screen are another advantages of this equipment. Finally, some food samples were tested that yielded the satisfactory results. PEF applying had considerable effects on potato, banana and purple cabbage. It caused increase Brix factor from 0.05 to 0.15 in potato solution. It is also so effective in extraction color material from purple cabbage. In the last experiment effects of PEF voltages on color extraction of saffron scum were surveyed (about 6% increasing yield).

Keywords: PEF, Capacitor, Switch, IGBT

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982 A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage

Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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981 SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp

Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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980 Investigation of the Effect of Impulse Voltage to Flashover by Using Water Jet

Authors: Harun Gülan, Muhsin Tunay Gencoglu, Mehmet Cebeci

Abstract:

The main function of the insulators used in high voltage (HV) transmission lines is to insulate the energized conductor from the pole and hence from the ground. However, when the insulators fail to perform this insulation function due to various effects, failures occur. The deterioration of the insulation results either from breakdown or surface flashover. The surface flashover is caused by the layer of pollution that forms conductivity on the surface of the insulator, such as salt, carbonaceous compounds, rain, moisture, fog, dew, industrial pollution and desert dust. The source of the majority of failures and interruptions in HV lines is surface flashover. This threatens the continuity of supply and causes significant economic losses. Pollution flashover in HV insulators is still a serious problem that has not been fully resolved. In this study, a water jet test system has been established in order to investigate the behavior of insulators under dirty conditions and to determine their flashover performance. Flashover behavior of the insulators is examined by applying impulse voltages in the test system. This study aims to investigate the insulator behaviour under high impulse voltages. For this purpose, a water jet test system was installed and experimental results were obtained over a real system and analyzed. By using the water jet test system instead of the actual insulator, the damage to the insulator as a result of the flashover that would occur under impulse voltage was prevented. The results of the test system performed an important role in determining the insulator behavior and provided predictability.

Keywords: Insulator, pollution flashover, high impulse voltage, water jet model.

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979 Comparative Study of Line Voltage Stability Indices for Voltage Collapse Forecasting in Power Transmission System

Authors: H. H. Goh, Q. S. Chua, S. W. Lee, B. C. Kok, K. C. Goh, K. T. K. Teo

Abstract:

At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices used is to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising.

Keywords: Critical line, line outage, line voltage stability indices (LVSI), maximum loadability, voltage collapse, voltage instability, voltage stability analysis.

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978 DC-to-DC Converters for Low-Voltage High-Power Renewable Energy Systems

Authors: Abdar Ali, Rizwan Ullah, Zahid Ullah

Abstract:

This paper focuses on the study of DC-to-DC converters, which are suitable for low-voltage high-power applications. The output voltages generated by renewable energy sources such as photovoltaic arrays and fuel cell stacks are generally low and required to be increased to high voltage levels. Development of DC-to-DC converters, which provide high step-up voltage conversion ratios with high efficiencies and low voltage stresses, is one of the main issues in the development of renewable energy systems. A procedure for three converters−conventional DC-to-DC converter, interleaved boost converter, and isolated flyback based converter, is illustrated for a given set of specifications. The selection among the converters for the given application is based on the voltage conversion ratio, efficiency, and voltage stresses.

Keywords: Flyback converter, interleaved boost, photovoltaic array, fuel cell, switch stress, voltage conversion ratio, renewable energy.

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977 Modeling and Simulation of Dynamic Voltage Restorer for Mitigation of Voltage Sags

Authors: S. Ganesh, L. Raguraman, E. Anushya, J. krishnasree

Abstract:

Voltage sags are the most common power quality disturbance in the distribution system. It occurs due to the fault in the electrical network or by the starting of a large induction motor and this can be solved by using the custom power devices such as Dynamic Voltage Restorer (DVR). In this paper DVR is proposed to compensate voltage sags on critical loads dynamically. The DVR consists of VSC, injection transformers, passive filters and energy storage (lead acid battery). By injecting an appropriate voltage, the DVR restores a voltage waveform and ensures constant load voltage. The simulation and experimental results of a DVR using MATLAB software shows clearly the performance of the DVR in mitigating voltage sags.

Keywords: Dynamic voltage restorer, Voltage sags, Power quality, Injection methods.

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976 Design of High Gain, High Bandwidth Op-Amp for Reduction of Mismatch Currents in Charge Pump PLL in 180 nm CMOS Technology

Authors: R .H. Talwekar, S. S Limaye

Abstract:

The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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975 Application of Voltage Stability Indices for Proper Placement of STATCOM under Load Increase Scenario

Authors: A. S. Telang, P. P. Bedekar

Abstract:

In today’s world, electrical energy has become an indispensable component of all aspects of modern human life. Reliability, security and stability are the key aspects of any power system. Failure to meet any of these three aspects results into a great impediment to modern life. Modern power systems are being subjected to heavily stressed conditions leading to voltage stability problems. If the voltage stability problems are not mitigated properly through proper voltage stability assessment methods, cascading events may occur which may lead to voltage collapse or blackout events. Modern FACTS devices like STATCOM are one of the measures to overcome the blackout problems. As these devices are very costly, they must be installed properly at suitable locations, mostly at weak bus. Line voltage stability indices such as FVSI, Lmn and LQP play important role for identification of a weak bus. This paper presents evaluation of these line stability indices for the assessment of reliable information about the closeness of the power system to voltage collapse. PSAT is a user-friendly MATLAB toolbox, of which CPF is an important feature which has been extensively used for the placement of STATCOM to assess the stability. Novelty of the present research work lies in that the active and reactive load has been changed simultaneously at all the load buses under consideration. MATLAB code has been developed for the same and tested successfully on various standard IEEE test systems. The results for standard IEEE14 bus test system, specifically, are presented in this paper.

Keywords: Voltage stability analysis, voltage collapse, PSAT, CPF, VSI, FVSI, Lmn, LQP.

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974 Detection of Voltage Sag and Voltage Swell in Power Quality Using Wavelet Transforms

Authors: Nor Asrina Binti Ramlee

Abstract:

Voltage sag, voltage swell, high-frequency noise and voltage transients are kinds of disturbances in power quality. They are also known as power quality events. Equipment used in the industry nowadays has become more sensitive to these events with the increasing complexity of equipment. This leads to the importance of distributing clean power quality to the consumer. To provide better service, the best analysis on power quality is very vital. Thus, this paper presents the events detection focusing on voltage sag and swell. The method is developed by applying time domain signal analysis using wavelet transform approach in MATLAB. Four types of mother wavelet namely Haar, Dmey, Daubechies, and Symlet are used to detect the events. This project analyzed real interrupted signal obtained from 22 kV transmission line in Skudai, Johor Bahru, Malaysia. The signals will be decomposed through the wavelet mothers. The best mother is the one that is capable to detect the time location of the event accurately.

Keywords: Power quality, voltage sag, voltage swell, wavelet transform.

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973 Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance

Authors: Mansour I. Abbadi, Abdel-Rahman M. Jaradat

Abstract:

In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Keywords: voltage-controlled capacitance, voltage-controlled inductance, varactor diode, variable transconductance.

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972 Voltage Stability Proximity Index Determined by LES Algorithm

Authors: Benalia Nadia, Bensiali Nadia, Mekki Mounira

Abstract:

In this paper, we propose an easily computable proximity index for predicting voltage collapse of a load bus using only measured values of the bus voltage and power; Using these measurements a polynomial of fourth order is obtained by using LES estimation algorithms. The sum of the absolute values of the polynomial coefficient gives an idea of the critical bus. We demonstrate the applicability of our proposed method on 6 bus test system. The results obtained verify its applicability, as well as its accuracy and the simplicity. From this indicator, it is allowed to predict the voltage instability or the proximity of a collapse. Results obtained by the PV curve are compared with corresponding values by QV curves and are observed to be in close agreement.

Keywords: least square method, Voltage Collapse, Voltage Stability, PV curve

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971 Estimation of Attenuation and Phase Delay in Driving Voltage Waveform of an Ultra-High-Speed Image Sensor by Dimensional Analysis

Authors: V. T. S. Dao, T. G. Etoh, C. Vo Le, H. D. Nguyen, K. Takehara, T. Akino, K. Nishi

Abstract:

We present an explicit expression to estimate driving voltage attenuation through RC networks representation of an ultrahigh- speed image sensor. Elmore delay metric for a fundamental RC chain is employed as the first-order approximation. By application of dimensional analysis to SPICE simulation data, we found a simple expression that significantly improves the accuracy of the approximation. Estimation error of the resultant expression for uniform RC networks is less than 2%. Similarly, another simple closed-form model to estimate 50 % delay through fundamental RC networks is also derived with sufficient accuracy. The framework of this analysis can be extended to address delay or attenuation issues of other VLSI structures.

Keywords: Dimensional Analysis, Elmore model, RC network, Signal Attenuation, Ultra-High-Speed Image Sensor.

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970 Static Voltage Stability Margin Enhancement Using SVC and TCSC

Authors: Mohammed Amroune, Hadi Sebaa, Tarek Bouktir

Abstract:

Reactive power limit of power system is one of the major causes of voltage instability. The only way to save the system from voltage instability is to reduce the reactive power load or add additional reactive power to reaching the point of voltage collapse. In recent times, the application of FACTS devices is a very effective solution to prevent voltage instability due to their fast and very flexible control. In this paper, voltage stability assessment with SVC and TCSC devices is investigated and compared in the modified IEEE 30-bus test system. The fast voltage stability indicator (FVSI) is used to identify weakest bus and to assess the voltage stability of power system.

Keywords: SVC, TCSC, Voltage stability, Fast Voltage Stability Index (FVSI), Reactive power.

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969 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design

Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode, high breakdown voltage, field plate, Baliga’s figure-of-merit.

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