Search results for: Single electron devices
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2919

Search results for: Single electron devices

2919 Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits

Authors: Sharief F. Babiker, Abdelkareem Bedri, Rania Naeem

Abstract:

The implementation of single-electron tunneling (SET) simulators based on the master-equation (ME) formalism requires the efficient and accurate identification of an exhaustive list of active states and related tunnel events. Dynamic simulations also require the control of the emerging states and guarantee the safe elimination of decaying states. This paper describes algorithms for use in the stationary and dynamic control of the lists of active states and events. The paper presents results obtained using these algorithms with different SET structures.

Keywords: Active state, Coulomb blockade, Master Equation, Single electron devices

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2918 An Analytical Electron Mobility Model based on Particle Swarm Computation for Siliconbased Devices

Authors: F. Djeffal, N. Lakhdar, T. Bendib

Abstract:

The study of the transport coefficients in electronic devices is currently carried out by analytical and empirical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the different characteristics of the electronic silicon-based devices. Further progress in the development, design and optimization of Silicon-based devices necessarily requires new theory and modeling tools. In our study, we use the PSO (Particle Swarm Optimization) technique as a computational tool to develop analytical approaches in order to study the transport phenomenon of the electron in crystalline silicon as function of temperature and doping concentration. Good agreement between our results and measured data has been found. The optimized analytical models can also be incorporated into the circuits simulators to study Si-based devices without impact on the computational time and data storage.

Keywords: Particle Swarm, electron mobility, Si-based devices, Optimization.

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2917 A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications

Authors: M.J. Sharifi

Abstract:

Several models have been introduced so far for single electron box, SEB, which all of them were restricted to DC response and or low temperature limit. In this paper we introduce a new time dependent, high temperature analytical model for SEB for the first time. DC behavior of the introduced model will be verified against SIMON software and its time behavior will be verified against a newly published paper regarding step response of SEB.

Keywords: Single electron box, SPICE, SIMON, Timedependent, Circuit model.

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2916 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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2915 Optimum Signal-to-noise Ratio Performance of Electron Multiplying Charge Coupled Devices

Authors: Wen W. Zhang, Qian Chen

Abstract:

Electron multiplying charge coupled devices (EMCCDs) have revolutionized the world of low light imaging by introducing on-chip multiplication gain based on the impact ionization effect in the silicon. They combine the sub-electron readout noise with high frame rates. Signal-to-noise Ratio (SNR) is an important performance parameter for low-light-level imaging systems. This work investigates the SNR performance of an EMCCD operated in Non-inverted Mode (NIMO) and Inverted Mode (IMO). The theory of noise characteristics and operation modes is presented. The results show that the SNR of is determined by dark current and clock induced charge at high gain level. The optimum SNR performance is provided by an EMCCD operated in NIMO in short exposure and strong cooling applications. In contrast, an IMO EMCCD is preferable.

Keywords: electron multiplying charge coupled devices, noise characteristics, operation modes, signal-to-noise ratioperformance

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2914 A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices

Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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2913 Degradation Model of Optical Characteristics of Zno-Pigmented White Paint by Electron Radiation

Authors: Tian Hai, Yang Shengsheng, Jr., Wang Yi

Abstract:

Based on an analysis of the mechanism of degradation of optical characteristics of the ZnO-pigmented white paint by electron irradiation, a model of single molecular color centers is built. An equation that explains the relationship between the changes of variation of the ZnO-pigmented white paint-s spectrum absorptance and electron fluence is derived. The uncertain parameters in the equation can be calculated using the curve fitting by experimental data. The result indicates that the model can be applied to predict the degradation of optical characteristics of ZnO-pigmented white paint by electron radiation.

Keywords: ZnO-pigmented white pain, effects of electron radiation, optical characteristics degradation, prediction model.

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2912 Researches Concerning Photons as Corpuscles with Mass and Negative Electrostatic Charge

Authors: Ioan Rusu

Abstract:

Let us consider that the entire universe is composed of a single hydrogen atom within which the electron is moving around the proton. In this case, according to classical theories of physics, radiation, photons respectively, should be absorbed by the electron. Depending on the number of photons absorbed, the electron radius of rotation around the proton is established. Until now, the principle of photons absorption by electrons and the electron transition to a new energy level, namely to a higher radius of rotation around the proton, is not clarified in physics. This paper aims to demonstrate that radiation, photons respectively, have mass and negative electrostatic charge similar to electrons but infinitely smaller. The experiments which demonstrate this theory are simple: thermal expansion, photoelectric effect and thermonuclear reaction.

Keywords: Electrostatic, electron, proton, photon, radiation.

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2911 Implication of the Exchange-Correlation on Electromagnetic Wave Propagation in Single-Wall Carbon Nanotubes

Authors: A. Abdikian

Abstract:

Using the linearized quantum hydrodynamic model (QHD) and by considering the role of quantum parameter (Bohm’s potential) and electron exchange-correlation potential in conjunction with Maxwell’s equations, electromagnetic wave propagation in a single-walled carbon nanotubes was studied. The electronic excitations are described. By solving the mentioned equations with appropriate boundary conditions and by assuming the low-frequency electromagnetic waves, two general expressions of dispersion relations are derived for the transverse magnetic (TM) and transverse electric (TE) modes, respectively. The dispersion relations are analyzed numerically and it was found that the dependency of dispersion curves with the exchange-correlation effects (which have been ignored in previous works) in the low frequency would be limited. Moreover, it has been realized that asymptotic behaviors of the TE and TM modes are similar in single wall carbon nanotubes (SWCNTs). The results show that by adding the function of electron exchange-correlation potential lead to the phenomena and make to extend the validity range of QHD model. The results can be important in the study of collective phenomena in nanostructures.

Keywords: Transverse magnetic, transverse electric, quantum hydrodynamic model, electron exchange-correlation potential, single-wall carbon nanotubes.

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2910 Nonlinear Evolution of Electron Density Under High-Energy-Density Conditions

Authors: Shi Chen, Zi Y. Chen, Jian K. Dan, Jian F. Li

Abstract:

Evolution of one-dimensional electron system under high-energy-density (HED) conditions is investigated, using the principle of least-action and variational method. In a single-mode modulation model, the amplitude and spatial wavelength of the modulation are chosen to be general coordinates. Equations of motion are derived by considering energy conservation and force balance. Numerical results show that under HED conditions, electron density modulation could exist. Time dependences of amplitude and wavelength are both positively related to the rate of energy input. Besides, initial loading speed has a significant effect on modulation amplitude, while wavelength relies more on loading duration.

Keywords: Electron density modulation, HED, nonlinearevolution, plasmas.

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2909 ZnS and Graphene Quantum Dots Nanocomposite as Potential Electron Acceptor for Photovoltaics

Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 104 times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: Graphene, mobility, nanocomposites, photovoltaics, quantum dots, zinc sulphide.

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2908 Noise-Improved Signal Detection in Nonlinear Threshold Systems

Authors: Youguo Wang, Lenan Wu

Abstract:

We discuss the signal detection through nonlinear threshold systems. The detection performance is assessed by the probability of error Per . We establish that: (1) when the signal is complete suprathreshold, noise always degrades the signal detection both in the single threshold system and in the parallel array of threshold devices. (2) When the signal is a little subthreshold, noise degrades signal detection in the single threshold system. But in the parallel array, noise can improve signal detection, i.e., stochastic resonance (SR) exists in the array. (3) When the signal is predominant subthreshold, noise always can improve signal detection and SR always exists not only in the single threshold system but also in the parallel array. (4) Array can improve signal detection by raising the number of threshold devices. These results extend further the applicability of SR in signal detection.

Keywords: Probability of error, signal detection, stochasticresonance, threshold system.

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2907 Ubiquitous Life People Informatics Engine (U-Life PIE): Wearable Health Promotion System

Authors: Yi-Ping Lo, Shi-Yao Wei, Chih-Chun Ma

Abstract:

Since Google launched Google Glass in 2012, numbers of commercial wearable devices were released, such as smart belt, smart band, smart shoes, smart clothes ... etc. However, most of these devices perform as sensors to show the readings of measurements and few of them provide the interactive feedback to the user. Furthermore, these devices are single task devices which are not able to communicate with each other. In this paper a new health promotion system, Ubiquitous Life People Informatics Engine (U-Life PIE), will be presented. This engine consists of People Informatics Engine (PIE) and the interactive user interface. PIE collects all the data from the compatible devices, analyzes this data comprehensively and communicates between devices via various application programming interfaces. All the data and informations are stored on the PIE unit, therefore, the user is able to view the instant and historical data on their mobile devices any time. It also provides the real-time hands-free feedback and instructions through the user interface visually, acoustically and tactilely. These feedback and instructions suggest the user to adjust their posture or habits in order to avoid the physical injuries and prevent illness.

Keywords: Machine learning, user interface, user experience, Internet of things, health promotion.

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2906 Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures

Authors: N. Basanta Singh, Sanjoy Deb, G. P Mishra, Subir Kumar Sarkar

Abstract:

Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communication equipment has been increasing day by day and will continue to do so in future. As the response of any device depends on the carrier motion within the devices, extensive studies of carrier mobility in the devices has been established essential for the growth in the field of low dimensional devices. Small-signal ac transport of degenerate two-dimensional hot electrons in GaAs quantum wells is studied here incorporating deformation potential acoustic, polar optic and ionized impurity scattering in the framework of heated drifted Fermi-Dirac carrier distribution. Delta doping is considered in the calculations to investigate the effects of double delta doping on millimeter and submillimeter wave response of two dimensional hot electrons in GaAs nanostructures. The inclusion of delta doping is found to enhance considerably the two dimensional electron density which in turn improves the carrier mobility (both ac and dc) values in the GaAs quantum wells thereby providing scope of getting higher speed devices in future.

Keywords: Carrier mobility, Delta doping, Hot carriers, Quantum wells.

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2905 Automated Particle Picking based on Correlation Peak Shape Analysis and Iterative Classification

Authors: Hrabe Thomas, Beck Florian, Nickell Stephan

Abstract:

Cryo-electron microscopy (CEM) in combination with single particle analysis (SPA) is a widely used technique for elucidating structural details of macromolecular assemblies at closeto- atomic resolutions. However, development of automated software for SPA processing is still vital since thousands to millions of individual particle images need to be processed. Here, we present our workflow for automated particle picking. Our approach integrates peak shape analysis to the classical correlation and an iterative approach to separate macromolecules and background by classification. This particle selection workflow furthermore provides a robust means for SPA with little user interaction. Processing simulated and experimental data assesses performance of the presented tools.

Keywords: Cryo-electron Microscopy, Single Particle Analysis, Image Processing.

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2904 The Self-Energy of an Ellectron Bound in a Coulomb Field

Authors: J. Zamastil, V. Patkos

Abstract:

Recent progress in calculation of the one-loop selfenergy of the electron bound in the Coulomb field is summarized. The relativistic multipole expansion is introduced. This expansion is based on a single assumption: except for the part of the time component of the electron four-momentum corresponding to the electron rest mass, the exchange of four-momentum between the virtual electron and photon can be treated perturbatively. For non Sstates and normalized difference n3En −E1 of the S-states this itself yields very accurate results after taking the method to the third order. For the ground state the perturbation treatment of the electron virtual states with very high three-momentum is to be avoided. For these states one can always rearrange the pertinent expression in such a way that free-particle approximation is allowed. Combination of the relativistic multipole expansion and free-particle approximation yields very accurate result after taking the method to the ninth order. These results are in very good agreement with the previous results obtained by the partial wave expansion and definitely exclude the possibility that the uncertainity in determination of the proton radius comes from the uncertainity in the calculation of the one-loop selfenergy.

Keywords: Hydrogen-like atoms, self-energy.

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2903 In-situ Observations Using SEM-EBSD for Bending Deformation in Single-Crystal Materials

Authors: Yuko Matayoshi, Takashi Sakai, Ying-jun Jin, Jun-ichi Koyama

Abstract:

To elucidate the material characteristics of single crystals of pure aluminum and copper, the respective relations between crystallographic orientations and microstructures were examined, along with bending and mechanical properties. The texture distribution was also analysed. Bending tests were performed in a SEM apparatus while its behaviors were observed. Some analytical results related to crystal direction maps, inverse pole figures, and textures were obtained from electron backscatter diffraction (EBSD) analyses.

Keywords: Pure aluminum, Pure copper, Single crystal, Bending, SEM-EBSD analysis, Texture, Microstructure.

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2902 Automatic Map Simplification for Visualization on Mobile Devices

Authors: Hang Yu

Abstract:

The visualization of geographic information on mobile devices has become popular as the widespread use of mobile Internet. The mobility of these devices brings about much convenience to people-s life. By the add-on location-based services of the devices, people can have an access to timely information relevant to their tasks. However, visual analysis of geographic data on mobile devices presents several challenges due to the small display and restricted computing resources. These limitations on the screen size and resources may impair the usability aspects of the visualization applications. In this paper, a variable-scale visualization method is proposed to handle the challenge of small mobile display. By merging multiple scales of information into a single image, the viewer is able to focus on the interesting region, while having a good grasp of the surrounding context. This is essentially visualizing the map through a fisheye lens. However, the fisheye lens induces undesirable geometric distortion in the peripheral, which renders the information meaningless. The proposed solution is to apply map generalization that removes excessive information around the peripheral and an automatic smoothing process to correct the distortion while keeping the local topology consistent. The proposed method is applied on both artificial and real geographical data for evaluation.

Keywords: Map simplification, visualization, mobile devices.

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2901 Assessment of ATC with Shunt FACTS Devices

Authors: Ashwani Kumar, Jitender Kumar

Abstract:

In this paper, an optimal power flow based approach has been applied for multi-transactions deregulated environment for ATC determination with SVC and STATCOM. The main contribution of the paper is (i) OPF based approach for evaluation of ATC with multi-transactions, (ii) ATC enhancement with FACTS devices viz. SVC and STATCOM for intact and line contingency cases, (iii) Impact of ZIP load on ATC determination and comparison of ATC obtained with SVC and STATCOM. The results have been determined for intact and line contingency cases taking simultaneous as well as single transaction cases for IEEE 24 bus RTS.

Keywords: Available transfer capability, FACTS devices, line contingency, multi-transactions, ZIP load model.

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2900 Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes

Authors: Chi-Yan Chu, Kai-Chi Chuang, Huang-Chung Cheng

Abstract:

In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.

Keywords: RRAM, furnace annealing, forming, set and reset voltages, XPS.

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2899 OPTIMAL Placement of FACTS Devices by Genetic Algorithm for the Increased Load Ability of a Power System

Authors: A. B.Bhattacharyya, B. S.K.Goswami

Abstract:

This paper presents Genetic Algorithm (GA) based approach for the allocation of FACTS (Flexible AC Transmission System) devices for the improvement of Power transfer capacity in an interconnected Power System. The GA based approach is applied on IEEE 30 BUS System. The system is reactively loaded starting from base to 200% of base load. FACTS devices are installed in the different locations of the power system and system performance is noticed with and without FACTS devices. First, the locations, where the FACTS devices to be placed is determined by calculating active and reactive power flows in the lines. Genetic Algorithm is then applied to find the amount of magnitudes of the FACTS devices. This approach of GA based placement of FACTS devices is tremendous beneficial both in terms of performance and economy is clearly observed from the result obtained.

Keywords: FACTS Devices, Line Power Flow, OptimalLocation of FACTS Devices, Genetic Algorithm.

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2898 A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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2897 Instability of Electron Plasma Waves in an Electron-Hole Bounded Quantum Dusty Plasma

Authors: Basudev Ghosh, Sailendranath Paul, Sreyasi Banerjee

Abstract:

Using quantum hydrodynamical (QHD) model the linear dispersion relation for the electron plasma waves propagating in a cylindrical waveguide filled with a dense plasma containing streaming electron, hole and stationary charged dust particles has been derived. It is shown that the effect of finite boundary and stream velocity of electrons and holes make some of the possible modes of propagation linearly unstable. The growth rate of this instability is shown to depend significantly on different plasma parameters.

Keywords: Electron Plasma wave, Quantum plasma, Quantum Hydrodynamical model.

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2896 Micropower Composite Nanomaterials Based on Porous Silicon for Renewable Energy Sources

Authors: Alexey P. Antropov, Alexander V. Ragutkin, Nicolay A. Yashtulov

Abstract:

The original controlled technology for power active nanocomposite membrane-electrode assembly engineering on the basis of porous silicon is presented. The functional nanocomposites were studied by electron microscopy and cyclic voltammetry methods. The application possibility of the obtained nanocomposites as high performance renewable energy sources for micro-power electronic devices is demonstrated.

Keywords: Cyclic voltammetry, electron microscopy, nanotechnology, platinum-palladium nanocomposites, porous silicon, power activity, renewable energy sources.

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2895 Nonlinear Solitary Structures of Electron Plasma Waves in a Finite Temperature Quantum Plasma

Authors: Swarniv Chandra, Basudev Ghosh

Abstract:

Nonlinear solitary structures of electron plasma waves have been investigated by using nonlinear quantum fluid equations for electrons with an arbitrary temperature. It is shown that the electron degeneracy parameter has significant effects on the linear and nonlinear properties of electron plasma waves. Depending on its value both compressive and rarefactive solitons can be excited in the model plasma under consideration.

Keywords: Electron Plasma Waves, Finite Temperature Model, Modulational Instability, Quantum Plasma, Solitary structure

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2894 Single Ion Transport with a Single-Layer Graphene Nanopore

Authors: Vishal V. R. Nandigana, Mohammad Heiranian, Narayana R. Aluru

Abstract:

Graphene material has found tremendous applications in water desalination, DNA sequencing and energy storage. Multiple nanopores are etched to create opening for water desalination and energy storage applications. The nanopores created are of the order of 3-5 nm allowing multiple ions to transport through the pore. In this paper, we present for the first time, molecular dynamics study of single ion transport, where only one ion passes through the graphene nanopore. The diameter of the graphene nanopore is of the same order as the hydration layers formed around each ion. Analogous to single electron transport resulting from ionic transport is observed for the first time. The current-voltage characteristics of such a device are similar to single electron transport in quantum dots. The current is blocked until a critical voltage, as the ions are trapped inside a hydration shell. The trapped ions have a high energy barrier compared to the applied input electrical voltage, preventing the ion to break free from the hydration shell. This region is called “Coulomb blockade region”. In this region, we observe zero transport of ions inside the nanopore. However, when the electrical voltage is beyond the critical voltage, the ion has sufficient energy to break free from the energy barrier created by the hydration shell to enter into the pore. Thus, the input voltage can control the transport of the ion inside the nanopore. The device therefore acts as a binary storage unit, storing 0 when no ion passes through the pore and storing 1 when a single ion passes through the pore. We therefore postulate that the device can be used for fluidic computing applications in chemistry and biology, mimicking a computer. Furthermore, the trapped ion stores a finite charge in the Coulomb blockade region; hence the device also acts a super capacitor.

Keywords: Graphene, single ion transport, Coulomb blockade, fluidic computer, super capacitor.

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2893 Object Alignment for Military Optical Surveillance

Authors: Oscar J.G. Somsen, Fok Bolderheij

Abstract:

Electro-optical devices are increasingly used for military sea-, land- and air applications to detect, recognize and track objects. Typically, these devices produce video information that is presented to an operator. However, with increasing availability of electro-optical devices the data volume is becoming very large, creating a rising need for automated analysis. In a military setting, this typically involves detecting and recognizing objects at a large distance, i.e. when they are difficult to distinguish from background and noise. One may consider combining multiple images from a video stream into a single enhanced image that provides more information for the operator. In this paper we investigate a simple algorithm to enhance simulated images from a military context and investigate how the enhancement is affected by various types of disturbance.

Keywords: Electro-Optics, Automated Image alignment

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2892 Effects of the Coagulation Bath and Reduction Process on SO2 Adsorption Capacity of Graphene Oxide Fiber

Authors: Özge Alptoğa, Nuray Uçar, Nilgün Karatepe Yavuz, Ayşen Önen

Abstract:

Sulfur dioxide (SO2) is a very toxic air pollutant gas and it causes the greenhouse effect, photochemical smog, and acid rain, which threaten human health severely. Thus, the capture of SO2 gas is very important for the environment. Graphene which is two-dimensional material has excellent mechanical, chemical, thermal properties, and many application areas such as energy storage devices, gas adsorption, sensing devices, and optical electronics. Further, graphene oxide (GO) is examined as a good adsorbent because of its important features such as functional groups (epoxy, carboxyl and hydroxyl) on the surface and layered structure. The SO2 adsorption properties of the fibers are usually investigated on carbon fibers. In this study, potential adsorption capacity of GO fibers was researched. GO dispersion was first obtained with Hummers’ method from graphite, and then GO fibers were obtained via wet spinning process. These fibers were converted into a disc shape, dried, and then subjected to SO2 gas adsorption test. The SO2 gas adsorption capacity of GO fiber discs was investigated in the fields of utilization of different coagulation baths and reduction by hydrazine hydrate. As coagulation baths, single and triple baths were used. In single bath, only ethanol and CaCl2 (calcium chloride) salt were added. In triple bath, each bath has a different concentration of water/ethanol and CaCl2 salt, and the disc obtained from triple bath has been called as reference disk. The fibers which were produced with single bath were flexible and rough, and the analyses show that they had higher SO2 adsorption capacity than triple bath fibers (reference disk). However, the reduction process did not increase the adsorption capacity, because the SEM images showed that the layers and uniform structure in the fiber form were damaged, and reduction decreased the functional groups which SO2 will be attached. Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR), X-Ray Diffraction (XRD) analyzes were performed on the fibers and discs, and the effects on the results were interpreted. In the future applications of the study, it is aimed that subjects such as pH and additives will be examined.

Keywords: Coagulation bath, graphene oxide fiber, reduction, SO2 gas adsorption.

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2891 Modulational Instability of Electron Plasma Waves in Finite Temperature Quantum Plasma

Authors: Swarniv Chandra, Basudev Ghosh

Abstract:

Using the quantum hydrodynamic (QHD) model for quantum plasma at finite temperature the modulational instability of electron plasma waves is investigated by deriving a nonlinear Schrodinger equation. It was found that the electron degeneracy parameter significantly affects the linear and nonlinear properties of electron plasma waves in quantum plasma.

Keywords: Amplitude Modulation, Electron Plasma Waves, Finite Temperature Model, Modulational Instability, Quantum Plasma.

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2890 K-best Night Vision Devices by Multi-Criteria Mixed-Integer Optimization Modeling

Authors: Daniela I. Borissova, Ivan C. Mustakerov

Abstract:

The paper describes an approach for defining of k-best night vision devices based on multi-criteria mixed-integer optimization modeling. The parameters of night vision devices are considered as criteria that have to be optimized. Using different user preferences for the relative importance between parameters different choice of k-best devices can be defined. An ideal device with all of its parameters at their optimum is used to determine how far the particular device from the ideal one is. A procedure for evaluation of deviation between ideal solution and k-best solutions is presented. The applicability of the proposed approach is numerically illustrated using real night vision devices data. The proposed approach contributes to quality of decisions about choice of night vision devices by making the decision making process more certain, rational and efficient. 

Keywords: K-best devices, mixed-integer model, multi-criteria problem, night vision devices.

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