Search results for: CMOS.

Authors: Yavar Safaei Mehrabani, Mehdi Hosseinzadeh

Abstract:

As embedded and portable systems were emerged power consumption of circuits had been major challenge. On the other hand latency as determines frequency of circuits is also vital task. Therefore, trade off between both of them will be desirable. Modulo 2n+1 adders are important part of the residue number system (RNS) based arithmetic units with the interesting moduli set (2n-1,2n, 2n+1). In this manuscript we have introduced novel binary representation to the design of modulo 2n+1 adder. VLSI realization of proposed architecture under 180 nm full static CMOS technology reveals its superiority in terms of area, power consumption and power-delay product (PDP) against several peer existing structures.

Keywords: Computer arithmetic, modulo 2n+1 adders, Residue Number System (RNS), VLSI.

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Authors: Rishikesh Pandey, Maneesha Gupta

Abstract:

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: Arash Azizi-Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati

Abstract:

The energy consumption and delay in read/write operation of conventional SRAM is investigated analytically as well as by simulation. Explicit analytical expressions for the energy consumption and delay in read and write operation as a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the energy consumption and speed as well as in optimizing the design of conventional SRAM. HSPICE simulation in standard 0.25μm CMOS technology confirms precision of analytical expressions derived from this paper.

Keywords: Read energy consumption, write energy consumption, read delay, write delay.

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Authors: Il-Do Jeong, Hang-Geun Jeong

Abstract:

This paper describes the design and fabrication of a clock and data recovery circuit (CDR). We propose a new clock and data recovery which is based on a 1/4-rate frequency detector (QRFD). The proposed frequency detector helps reduce the VCO frequency and is thus advantageous for high speed application. The proposed frequency detector can achieve low jitter operation and extend the pull-in range without using the reference clock. The proposed CDR was implemented using a 1/4-rate bang-bang type phase detector (PD) and a ring voltage controlled oscillator (VCO). The CDR circuit has been fabricated in a standard 0.18 CMOS technology. It occupies an active area of 1 x 1 and consumes 90 mW from a single 1.8V supply.

Keywords: Clock and data recovery, 1/4-rate frequency detector, 1/4-rate phase detector.

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Authors: Krzysztof Wawryn, Robert Suszyński, Bogdan Strzeszewski

Abstract:

This paper presents two prototypes of low power low voltage current mode 9 bit pipelined a/d converters. The first and the second converters are configured of 1.5 bit and 2.5 bit stages, respectively. The a/d converter structures are composed of current mode building blocks and final comparator block which converts the analog current signal into digital voltage signal. All building blocks have been designed in CMOS AMS 0.35μm technology, then simulated to verify proposed concept. The performances of both converters are compared to performances of known current mode and voltage mode switched capacitance converter structures. Low power consumption and small chip area are advantages of the proposed converters.

Keywords: Pipelined converter, a/d converter, low power, lowvoltage, current mode.

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Authors: Ararat Khachatryan, Davit Mirzoyan

Abstract:

In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage.

Keywords: Nanoscale, aging, effect, NBTI, HCI.

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Authors: Padmanabhan Balasubramanian, Karthik Anantha

Abstract:

Structural representation and technology mapping of a Boolean function is an important problem in the design of nonregenerative digital logic circuits (also called combinational logic circuits). Library aware function manipulation offers a solution to this problem. Compact multi-level representation of binary networks, based on simple circuit structures, such as AND-Inverter Graphs (AIG) [1] [5], NAND Graphs, OR-Inverter Graphs (OIG), AND-OR Graphs (AOG), AND-OR-Inverter Graphs (AOIG), AND-XORInverter Graphs, Reduced Boolean Circuits [8] does exist in literature. In this work, we discuss a novel and efficient graph realization for combinational logic circuits, represented using a NAND-NOR-Inverter Graph (NNIG), which is composed of only two-input NAND (NAND2), NOR (NOR2) and inverter (INV) cells. The networks are constructed on the basis of irredundant disjunctive and conjunctive normal forms, after factoring, comprising terms with minimum support. Construction of a NNIG for a non-regenerative function in normal form would be straightforward, whereas for the complementary phase, it would be developed by considering a virtual instance of the function. However, the choice of best NNIG for a given function would be based upon literal count, cell count and DAG node count of the implementation at the technology independent stage. In case of a tie, the final decision would be made after extracting the physical design parameters. We have considered AIG representation for reduced disjunctive normal form and the best of OIG/AOG/AOIG for the minimized conjunctive normal forms. This is necessitated due to the nature of certain functions, such as Achilles- heel functions. NNIGs are found to exhibit 3.97% lesser node count compared to AIGs and OIG/AOG/AOIGs; consume 23.74% and 10.79% lesser library cells than AIGs and OIG/AOG/AOIGs for the various samples considered. We compare the power efficiency and delay improvement achieved by optimal NNIGs over minimal AIGs and OIG/AOG/AOIGs for various case studies. In comparison with functionally equivalent, irredundant and compact AIGs, NNIGs report mean savings in power and delay of 43.71% and 25.85% respectively, after technology mapping with a 0.35 micron TSMC CMOS process. For a comparison with OIG/AOG/AOIGs, NNIGs demonstrate average savings in power and delay by 47.51% and 24.83%. With respect to device count needed for implementation with static CMOS logic style, NNIGs utilize 37.85% and 33.95% lesser transistors than their AIG and OIG/AOG/AOIG counterparts.

Keywords: AND-Inverter Graph, OR-Inverter Graph, DirectedAcyclic Graph, Low power design, Delay optimization.

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

Abstract:

This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: Divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver.

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Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: Wireless power transfer, active diode, delay compensation, time to voltage converter, PCE.

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Authors: Kureshi Abdul Kadir, Mohd. Hasan

Abstract:

Each new semiconductor technology node brings smaller transistors and wires. Although this makes transistors faster, wires get slower. In nano-scale regime, the standard copper (Cu) interconnect will become a major hurdle for FPGA interconnect due to their high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as energy efficient and high speed interconnect for future FPGA routing architecture. All HSPICE simulations are carried out at operating frequency of 1GHz and it is found that mixed CNT bundle implemented in FPGAs as interconnect can potentially provide a substantial delay and energy reduction over traditional interconnects at 32nm process technology.

Keywords: CMOS, Copper Interconnect, Mixed CNT Bundle Interconnect, FPGAs.

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Authors: Yong Wang, Wang Ling Goh, Jung Hyup Lee, Kevin T. C. Chai, Minkyu Je

Abstract:

This paper presents a resonant-based read-out circuit for capacitive pressure sensors. The proposed read-out circuit consists of an LC oscillator and a counter. The circuit detects the capacitance changes of a capacitive pressure sensor by means of frequency shifts from its nominal operation frequency. The proposed circuit is designed in 0.18m CMOS with an estimated power consumption of 43.1mW. Simulation results show that the circuit has a capacitive resolution of 8.06kHz/fF, which enables it for high resolution pressure detection.

Keywords: Capacitance-to-frequency converter, Capacitive pressure sensor, Digital counter, LC oscillator.

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Authors: Lv Xiaopeng, Bian Qiang, Yue Suge

Abstract:

A fully on-chip low drop-out (LDO) voltage regulator with 100pF output load capacitor is presented. A novel frequency compensation scheme using current buffer is adopted to realize single dominant pole within the unit gain frequency of the regulation loop, the phase margin (PM) is at least 50 degree under the full range of the load current, and the power supply rejection (PSR) character is improved compared with conventional Miller compensation. Besides, the differentiator provides a high speed path during the load current transient. Implemented in 0.18μm CMOS technology, the LDO voltage regulator provides 100mA load current with a stable 1.8V output voltage consuming 80μA quiescent current.

Keywords: capacitor-less LDO, frequency compensation, transient response, power supply rejection

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Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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Authors: Jun Yu, Yat-Hei Lam, Boris Grinberg, Kevin Chai Tshun Chuan

Abstract:

This paper presents a 5-V to 30-V current-mode boost converter for powering the drive circuit of a micro-electro-mechanical sensor. The design of a transconductance amplifier and an integrated current sensing circuit are presented. In addition, essential building blocks for power-on protection such as a soft-start and clamp block and supply and clock ready block are discussed in details. The chip is fabricated in a 0.18-μm CMOS process. Measurement results show that the soft-start and clamp block can effectively limit the inrush current during startup and protect the boost converter from startup failure.

Keywords: Boost Converter, Current Sensing, Power-on protection, Step-up Converter, Soft-start.

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Authors: E. Farshidi

Abstract:

In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of the elements number, low supply voltage (0.7V), low power consumption (<200nW), immunity from body effect and wide input dynamic range (>60dB). In this paper, a set of fuzzy linguistic hedge circuits, including absolutely, very, much more, more, plus minus, more or less and slightly, has been implemented in 0.18 mm CMOS process. Simulation results by Hspice confirm the validity of the proposed design technique and show high performance of the circuits.

Keywords: Current-mode, Linguistic-Hedge, Fuzzy Logic, lowpower

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Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

Abstract:

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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Authors: S. Kumaravel, B. Venkataramani

Abstract:

In the literature, Improved Recycling Folded Cascode (IRFC) Operational Transconductance Amplifier (OTA) is proposed for enhancing the DC gain and the Unity Gain Bandwidth (UGB) of the Recycling Folded Cascode (RFC) OTA. In this paper, an enhanced IRFC (EIRFC) OTA which uses positive feedback at the cascode node is proposed for enhancing the differential mode (DM) gain without changing the unity gain bandwidth (UGB) and lowering the Common mode (CM) gain. For the purpose of comparison, IRFC and EIRFC OTAs are implemented using UMC 90nm CMOS technology and studied through simulation. From the simulation, it is found that the DM gain and CM gain of EIRFC OTA is higher by 6dB and lower by 38dB respectively, compared to that of IRFC OTA for the same power and area. The slew rate of EIRFC OTA is also higher by a factor of 1.5.

Keywords: Cascode Amplifier, CMRR, gm/ID Methodology, Recycling, Slew Rate.

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Authors: Kah-Hyong Chang, Xin Liu, Jia Hao Cheong, Saisundar Sankaranarayanan, Dexing Pang, Hongzhao Zheng

Abstract:

A digital baseband Application-Specific Integrated Circuit (ASIC) (yclic Redundancy Checkis developed for a microchip transponder to transmit signals and temperature levels from biomedical monitoring devices. The transmission protocol is adapted from the ISO/IEC 11784/85 standard. The module has a decimation filter that employs only a single adder-subtractor in its datapath. The filtered output is coded with cyclic redundancy check and transmitted through backscattering Load Shift Keying (LSK) modulation to a reader. Fabricated using the 0.18-μm CMOS technology, the module occupies 0.116 mm² in chip area (digital baseband: 0.060 mm², decimation filter: 0.056 mm²), and consumes a total of less than 0.9 μW of power (digital baseband: 0.75 μW, decimation filter: 0.14 μW).

Keywords: Biomedical sensor, decimation filter, Radio Frequency Integrated Circuit (RFIC) baseband, temperature sensor.

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Authors: P.K. Sharma, B. Bhargava, S. Akashe

Abstract:

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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Authors: Hassan Faraji Baghtash

Abstract:

In this paper, a low voltage high performance current mirror is presented. Its most important specifications, which are improved in this work, are analyzed and formulated proving that it has such outstanding merits as: Very low input resistance of 26mΩ, very wide current dynamic range of 8 decades from 10pA to 1mA (160dB) together with an extremely low current copy error of less than 0.6ppm, and very low input and output voltages. Furthermore, the proposed current mirror bandwidth is 944MHz utilizing very low power consumption (267μW) and transistors count. HSPICE simulation results are performed using TSMC 0.18μm CMOS technology utilizing 1.8V single power supply, confirming the theoretically proved outstanding performance of the proposed current mirror. Monte Carlo simulation of its most important parameter is also examined showing its sufficiently resistance against technology process variations.

Keywords: Current mirror/source, high accuracy, low voltage, wide dynamic range.

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Authors: Saad Mutashar Abbas, M. A. Hannan, S. A. Samad, A. Hussain

Abstract:

This paper presented a proposed design for transcutaneous inductive powering links. The design used to transfer power and data to the implanted devices such as implanted Microsystems to stimulate and monitoring the nerves and muscles. The system operated with low band frequency 13.56 MHZ according to industrial- scientific – medical (ISM) band to avoid the tissue heating. For external part, the modulation index is 13 % and the modulation rate 7.3% with data rate 1 Mbit/s assuming Tbit=1us. The system has been designed using 0.35-μm fabricated CMOS technology. The mathematical model is given and the design is simulated using OrCAD P Spice 16.2 software tool and for real-time simulation the electronic workbench MULISIM 11 has been used. The novel circular plane (pancake) coils was simulated using ANSOFT- HFss software.

Keywords: Implanted devices, ASK techniques, Class-E power amplifier, Inductive powering and low-frequency ISM band.

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Authors: S. Abdollahi Pour, M. Saneei

Abstract:

This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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Authors: S. M. Abbas, M. A. Hannan, S. A. Samad, A. Hussain

Abstract:

This paper presented a modified efficient inductive powering link based on ASK modulator and proposed efficient class- E power amplifier. The design presents the external part which is located outside the body to transfer power and data to the implanted devices such as implanted Microsystems to stimulate and monitoring the nerves and muscles. The system operated with low band frequency 10MHZ according to industrial- scientific – medical (ISM) band to avoid the tissue heating. For external part, the modulation index is 11.1% and the modulation rate 7.2% with data rate 1 Mbit/s assuming Tbit = 1us. The system has been designed using 0.35-μm fabricated CMOS technology. The mathematical model is given and the design is simulated using OrCAD P Spice 16.2 software tool and for real-time simulation, the electronic workbench MULISIM 11 has been used.

Keywords: Implanted devices, ASK techniques, Class-E power amplifier, Inductive powering and low-frequency ISM band.

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Authors: Néjib Hassen, Thouraya Ettaghzouti, Kamel Besbes

Abstract:

In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

Keywords: Current controlled current conveyor CCCII, floating inductor, grounded inductor, oscillator, universal filter.

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Authors: Shilpi Lavania

Abstract:

As the frequency of operation has attained a range of GHz and signal rise time continues to increase interconnect technology is suffering due to various high frequency effects as well as ground bounce problem. In some recent studies a high frequency effect i.e. skin effect has been modeled and its drawbacks have been discussed. This paper strives to make an impression on the advantage side of modeling skin effect for interconnect line. The proposed method has considered a CMOS with RC interconnect. Delay and noise considering ground bounce problem and with skin effect are discussed. The simulation results reveal an advantage of considering skin effect for minimization of ground bounce problem during the working of the model. Noise and delay variations with temperature are also presented.

Keywords: Interconnect, Skin effect, Ground Bounce, Delay, Noise.

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Authors: Ki-Jin Kim, Sanghoon Park, K. H. Ahn

Abstract:

A way of generating millimeter wave I/Q signal using inductive resonator matched poly-phase filter is suggested. Normally the poly-phase filter generates quite accurate I/Q phase and magnitude but the loss of the filter is considerable due to series connection of passive RC components. This loss term directly increases system noise figure when the poly-phase filter is used in RF Front-end. The proposed matching method eliminates above mentioned loss and in addition provides gain on the passive filter. The working algorithm is illustrated by mathematical analysis. The generated I/Q signal is used in implementing millimeter wave phase shifter for the 60 GHz communication system to verify its effectiveness. The circuit is fabricated in 90 nm TSMC RF CMOS process under 1.2 V supply voltage. The measurement results showed that the suggested method improved gain by 6.5 dB and noise by 2.3 dB. The summary of the proposed I/Q generation is compared with previous works.

Keywords: Millimeter Wave Circuits, Local Distribution, I/Q Generator.

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Authors: Khalil Monfaredi, Hassan Faraji Baghtash, Majid Abbasi

Abstract:

In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.

Keywords: Analog circuits, Current mirror, high frequency, Low power, Low voltage.

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Authors: P.Ramanathan, P.T.Vanathi

Abstract:

Parallel Prefix addition is a technique for improving the speed of binary addition. Due to continuing integrating intensity and the growing needs of portable devices, low-power and highperformance designs are of prime importance. The classical parallel prefix adder structures presented in the literature over the years optimize for logic depth, area, fan-out and interconnect count of logic circuits. In this paper, a new architecture for performing 8-bit, 16-bit and 32-bit Parallel Prefix addition is proposed. The proposed prefix adder structures is compared with several classical adders of same bit width in terms of power, delay and number of computational nodes. The results reveal that the proposed structures have the least power delay product when compared with its peer existing Prefix adder structures. Tanner EDA tool was used for simulating the adder designs in the TSMC 180 nm and TSMC 130 nm technologies.

Keywords: Parallel Prefix Adder (PPA), Dot operator, Semi-Dotoperator, Complementary Metal Oxide Semiconductor (CMOS), Odd-dot operator, Even-dot operator, Odd-semi-dot operator andEven-semi-dot operator.

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Authors: Bilel Gassara, Mahmoud Abdellaoui, Nouri Masmoud

Abstract:

The 4G front-end transceiver needs a high performance which can be obtained mainly with an optimal architecture and a multi-band Local Oscillator. In this study, we proposed and presented a new architecture of multi-band frequency synthesizer based on an Inverse Sine Phase Detector Phase Locked Loop (ISPD PLL) without any filters and any controlled gain block and associated with adapted multi band LC tuned VCO using a several numeric controlled capacitive branches but not binary weighted. The proposed architecture, based on 0.35μm CMOS process technology, supporting Multi-band GSM/DCS/DECT/ UMTS/WiMax application and gives a good performances: a phase noise @1MHz -127dBc and a Factor Of Merit (FOM) @ 1MHz - 186dB and a wide band frequency range (from 0.83GHz to 3.5GHz), that make the proposed architecture amenable for monolithic integration and 4G multi-band application.

Keywords: GSM/DCS/DECT/UMTS/WiMax, ISPD PLL, keep and capture range, Multi-Band, Synthesizer, Wireless.

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Authors: Guo-Ming Sung, Naga Raju Naik R.

Abstract:

Paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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