Search results for: CMOS LC-based oscillator
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 212

Search results for: CMOS LC-based oscillator

92 A Novel Logarithmic Current-Controlled Current Amplifier (LCCA)

Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

Abstract:

A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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91 A Direct Down-conversion Receiver for Low-power Wireless Sensor Networks

Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez

Abstract:

A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.

Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).

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90 On the Characteristics of Liquid Explosive Dispersing Flow

Authors: Lei Li, Xiaobing Ren, Xiaoxia Lu, Xiaofang Yan

Abstract:

In this paper, some experiments of liquid dispersion flow driven by explosion in vertical plane were carried out using a liquid explosive dispersion device with film cylindrical constraints. The separated time series describing the breakup shape and dispersion process of liquid were recorded with high speed CMOS camera. The experimental results were analyzed and some essential characteristics of liquid dispersing flow are presented.

Keywords: Explosive Disseminations, liquid dispersion Flow, Cavitations, Gasification.

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89 Vibroacoustic Modulation of Wideband Vibrations and Its Possible Application for Windmill Blade Diagnostics

Authors: Abdullah Alnutayfat, Alexander Sutin, Dong Liu

Abstract:

Wind turbine has become one of the most popular energy production methods. However, failure of blades and maintenance costs evolve into significant issues in the wind power industry, so it is essential to detect the initial blade defects to avoid the collapse of the blades and structure. This paper aims to apply modulation of high-frequency blade vibrations by low-frequency blade rotation, which is close to the known Vibro-Acoustic Modulation (VAM) method. The high-frequency wideband blade vibration is produced by the interaction of the surface blades with the environment air turbulence, and the low-frequency modulation is produced by alternating bending stress due to gravity. The low-frequency load of rotational wind turbine blades ranges between 0.2-0.4 Hz and can reach up to 2 Hz for strong wind. The main difference between this study and previous ones on VAM methods is the use of a wideband vibration signal from the blade's natural vibrations. Different features of the VAM are considered using a simple model of breathing crack. This model considers the simple mechanical oscillator, where the parameters of the oscillator are varied due to low-frequency blade rotation. During the blade's operation, the internal stress caused by the weight of the blade modifies the crack's elasticity and damping. The laboratory experiment using steel samples demonstrates the possibility of VAM using a probe wideband noise signal. A cycle load with a small amplitude was used as a pump wave to damage the tested sample, and a small transducer generated a wideband probe wave. The received signal demodulation was conducted using the Detecting of Envelope Modulation on Noise (DEMON) approach. In addition, the experimental results were compared with the modulation index (MI) technique regarding the harmonic pump wave. The wideband and traditional VAM methods demonstrated similar sensitivity for earlier detection of invisible cracks. Importantly, employing a wideband probe signal with the DEMON approach speeds up and simplifies testing since it eliminates the need to conduct tests repeatedly for various harmonic probe frequencies and to adjust the probe frequency.

Keywords: Damage detection, turbine blades, Vibro-Acoustic Structural Health Monitoring, SHM, Detecting of Envelope Modulation on Noise.

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88 Second Sub-Harmonic Resonance in Vortex-Induced Vibrations of a Marine Pipeline Close to the Seabed

Authors: Yiming Jin, Yuanhao Gao

Abstract:

In this paper, using the method of multiple scales, the second sub-harmonic resonance in vortex-induced vibrations (VIV) of a marine pipeline close to the seabed is investigated based on a developed wake oscillator model. The amplitude-frequency equations are also derived. It is found that the oscillation will increase all the time when both discriminants of the amplitude-frequency equations are positive while the oscillation will decay when the discriminants are negative.

Keywords: Vortex-induced vibrations, marine pipeline, seabed, sub-harmonic resonance.

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87 Experimental Investigation of Adjacent Hall Structures Parameters

Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

Abstract:

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

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86 A Sub-mW Low Noise Amplifier for Wireless Sensor Networks

Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

Abstract:

A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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85 Application of Vortex Induced Vibration Energy Generation Technologies to the Offshore Oil and Gas Platform: The Feasibility Study

Authors: T. Yui Khing, M. A. Zahari, S. S. Dol

Abstract:

Ocean current is always available around the surrounding of SHELL Sabah Water Platform and data are collected every 10 minutes, 24 hours a day, for a period of 365 days. Due to low current speed, conventional hydrokinetic power generation is not feasible, thus leading to the study of low current enabled vortex induced vibration power generation application. In this case, the design of a vortex induced vibration application is studied to obtain an optimum design for the VIV oscillator. Power output is then determined to study the feasibility of the VIV application in low current condition.

Keywords: Renewable energy, Vortex induced vibration, Turbulence, Lock-in.

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84 Study of a Fabry-Perot Resonator

Authors: F. Hadjaj, A. Belghachi, A. Halmaoui, M. Belhadj, H. Mazouz

Abstract:

A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.

Keywords: Fabry-Perot Resonator, laser diode.

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83 A New True RMS-to-DC Converter in CMOS Technology

Authors: H. Asiaban, E. Farshidi

Abstract:

This paper presents a new true RMS-to-DC converter circuit based on a square-root-domain squarer/divider. The circuit is designed by employing up-down translinear loop and using of MOSFET transistors that operate in strong inversion saturation region. The converter offer advantages of two-quadrant input current, low circuit complexity, low supply voltage (1.2V) and immunity from the body effect. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.

Keywords: Current-mode, squarer/divider, low-pass filter, converter, translinear loop, RMS-to-DC.

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82 Library Aware Power Conscious Realization of Complementary Boolean Functions

Authors: Padmanabhan Balasubramanian, C. Ardil

Abstract:

In this paper, we consider the problem of logic simplification for a special class of logic functions, namely complementary Boolean functions (CBF), targeting low power implementation using static CMOS logic style. The functions are uniquely characterized by the presence of terms, where for a canonical binary 2-tuple, D(mj) ∪ D(mk) = { } and therefore, we have | D(mj) ∪ D(mk) | = 0 [19]. Similarly, D(Mj) ∪ D(Mk) = { } and hence | D(Mj) ∪ D(Mk) | = 0. Here, 'mk' and 'Mk' represent a minterm and maxterm respectively. We compare the circuits minimized with our proposed method with those corresponding to factored Reed-Muller (f-RM) form, factored Pseudo Kronecker Reed-Muller (f-PKRM) form, and factored Generalized Reed-Muller (f-GRM) form. We have opted for algebraic factorization of the Reed-Muller (RM) form and its different variants, using the factorization rules of [1], as it is simple and requires much less CPU execution time compared to Boolean factorization operations. This technique has enabled us to greatly reduce the literal count as well as the gate count needed for such RM realizations, which are generally prone to consuming more cells and subsequently more power consumption. However, this leads to a drawback in terms of the design-for-test attribute associated with the various RM forms. Though we still preserve the definition of those forms viz. realizing such functionality with only select types of logic gates (AND gate and XOR gate), the structural integrity of the logic levels is not preserved. This would consequently alter the testability properties of such circuits i.e. it may increase/decrease/maintain the same number of test input vectors needed for their exhaustive testability, subsequently affecting their generalized test vector computation. We do not consider the issue of design-for-testability here, but, instead focus on the power consumption of the final logic implementation, after realization with a conventional CMOS process technology (0.35 micron TSMC process). The quality of the resulting circuits evaluated on the basis of an established cost metric viz., power consumption, demonstrate average savings by 26.79% for the samples considered in this work, besides reduction in number of gates and input literals by 39.66% and 12.98% respectively, in comparison with other factored RM forms.

Keywords: Reed-Muller forms, Logic function, Hammingdistance, Algebraic factorization, Low power design.

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81 A Low-cost Reconfigurable Architecture for AES Algorithm

Authors: Yibo Fan, Takeshi Ikenaga, Yukiyasu Tsunoo, Satoshi Goto

Abstract:

This paper proposes a low-cost reconfigurable architecture for AES algorithm. The proposed architecture separates SubBytes and MixColumns into two parallel data path, and supports different bit-width operation for this two data path. As a result, different number of S-box can be supported in this architecture. The throughput and power consumption can be adjusted by changing the number of S-box running in this design. Using the TSMC 0.18μm CMOS standard cell library, a very low-cost implementation of 7K Gates is obtained under 182MHz frequency. The maximum throughput is 360Mbps while using 4 S-Box simultaneously, and the minimum throughput is 114Mbps while only using 1 S-Box

Keywords: AES, Reconfigurable architecture, low cost

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80 Design and Simulation Interface Circuit for Piezoresistive Accelerometers with Offset Cancellation Ability

Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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79 Realization of Electronically Tunable Currentmode First-order Allpass Filter and Its Application

Authors: Supayotin Na Songkla, Winai Jaikla

Abstract:

This article presents a resistorless current-mode firstorder allpass filter based on second generation current controlled current conveyors (CCCIIs). The features of the circuit are that: the pole frequency can be electronically controlled via the input bias current: the circuit description is very simple, consisting of 2 CCCIIs and single grounded capacitor, without any external resistors and component matching requirements. Consequently, the proposed circuit is very appropriate to further develop into an integrated circuit. Low input and high output impedances of the proposed configuration enable the circuit to be cascaded in current-mode without additional current buffers. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation. The application example as a current-mode quadrature oscillator is included.

Keywords: First-order all pass filter, current-mode, CCCII.

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78 A Nonlinear ODE System for the Unsteady Hydrodynamic Force – A New Approach

Authors: Osama A. Marzouk

Abstract:

We propose a reduced-ordermodel for the instantaneous hydrodynamic force on a cylinder. The model consists of a system of two ordinary differential equations (ODEs), which can be integrated in time to yield very accurate histories of the resultant force and its direction. In contrast to several existing models, the proposed model considers the actual (total) hydrodynamic force rather than its perpendicular or parallel projection (the lift and drag), and captures the complete force rather than the oscillatory part only. We study and provide descriptions of the relationship between the model parameters, evaluated utilizing results from numerical simulations, and the Reynolds number so that the model can be used at any arbitrary value within the considered range of 100 to 500 to provide accurate representation of the force without the need to perform timeconsuming simulations and solving the partial differential equations (PDEs) governing the flow field.

Keywords: reduced-order model, wake oscillator, nonlinear, ODEsystem

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77 Design of OTA with Common Drain and Folded Cascade Used in ADC

Authors: Gu Wei, Gao Wei

Abstract:

In this report, an OTA which is used in fully differential pipelined ADC was described. Using gain-boost architecture with difference-ended amplifier, this OTA achieve high-gain and high-speed. Besides, the CMFB circuit is also used, and some methods are concerned to improve the performance. Then, by optimization the layout design, OTA-s mismatch was reduced. This design was using TSMC 0.18um CMOS process and simulation both schematic and layout in Cadence. The result of the simulation shows that the OTA has a gain up to 80dB,a unity gain bandwidth of about 1.437GHz for a 2pF load, a slew rate is about 428V/μs, a output swing is 0.2V~1.35V, with the power supply of 1.8V, the power consumption is 88mW. This amplifier was used in a 10bit 150MHz pipelined ADC.

Keywords: OTA, common drain, CMFB, pipelined ADC

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76 An Improved ICI Self-Cancellation Scheme for Multi-Carrier Communication Systems

Authors: Arvind Kumar, Rajoo Pandey

Abstract:

For broadband wireless mobile communication systems the orthogonal frequency division multiplexing (OFDM) is a suitable modulation scheme. The frequency offset between transmitter and receiver local oscillator is main drawback of OFDM systems, which causes intercarrier interference (ICI) in the subcarriers of the OFDM system. This ICI degrades the bit error rate (BER) performance of the system. In this paper an improved self-ICI cancellation scheme is proposed to improve the system performance. The proposed scheme is based on discrete Fourier transform-inverse discrete Fourier transform (DFT-IDFT). The simulation results show that there is satisfactory improvement in the bit error rate (BER) performance of the present scheme.

Keywords: OFDM, Intercarrier Interference, InterferenceCoefficients, DFT based Self-ICI Cancellation.

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75 Design a Low Voltage- Low Offset Class AB Op-Amp

Authors: B.Gholami, S.Gholami, A.Forouzantabar, Sh.Bazyari

Abstract:

A new design approach for three-stage operational amplifiers (op-amps) is proposed. It allows to actually implement a symmetrical push-pull class-AB amplifier output stage for wellestablished three-stage amplifiers using a feedforward transconductance stage. Compared with the conventional design practice, the proposed approach leads to a significant improvement of the symmetry between the positive and the negative op-amp step response, resulting in similar values of the positive/negative settling time. The new approach proves to be very useful in order to fully exploit the potentiality allowed by the op-amp in terms of speed performances. Design examples in a commercial 0.35-μm CMOS prove the effectiveness of theproposed strategy.

Keywords: Low-voltage op amp, design , optimum design

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74 A 1.5V,100MS/s,12-bit Current-Mode CMOSS ample-and-Hold Circuit

Authors: O. Hashemipour, S. G. Nabavi

Abstract:

A high-linearity and high-speed current-mode sampleand- hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal - dependent -error is completely eliminated by a new zero voltage switching technique. The circuit has a linearity error equal to ±0.05μa, i.e. 12-bit accuracy with a ±160 μa differential output - input signal frequency of 5MHZ, and sampling frequency of 100 MHZ. Third harmonic is equal to –78dB.

Keywords: Zero-voltage-technique, MOS-resistor, OTA, Feedback-resistor.

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73 Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process

Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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72 Design of Novel SCR-based ESD Protection Device for I/O Clamp in BCD Process

Authors: Yong-Seo Koo, Jin-Woo Jung, Byung-Seok Lee, Dong-Su Kim, Yil-Suk Yang

Abstract:

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.

Keywords: ESD Protection, grounded gate NMOS (GGNMOS), low trigger voltage SCR (LVTSCR)

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71 A Low-Voltage Tunable Channel Selection Filter for WiMAX Applications

Authors: Kayvan Ahmadi, Hossein Shamsi

Abstract:

This paper proposes a low-voltage and low-power fully integrated digitally tuned continuous-time channel selection filter for WiMAX applications. A 5th-order elliptic low-pass filter is realized in a Gm-C topology. The bandwidth of the fully differential filter is reconfigurable from 2.5MHz to 20MHz (8x) for different requirements in WiMAX applications. The filter is simulated in a standard 90nm CMOS process. Simulation results show the THD (@Vout =100mVpp) is less than -66dB. The in-band ripple of the filter is about 0.15dB. The filter consumes 1.5mW from a supply voltage of 0.9V.

Keywords: Common-mode feedback, continuous-time, fully differential transconductor, Gm-C topology, low-voltage

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70 Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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69 A Reversible CMOS AD / DA Converter Implemented with Pseudo Floating-Gate

Authors: Omid Mirmotahari, Yngvar Berg, Ahmad Habibizad Navin

Abstract:

Reversible logic is becoming more and more prominent as the technology sets higher demands on heat, power, scaling and stability. Reversible gates are able at any time to "undo" the current step or function. Multiple-valued logic has the advantage of transporting and evaluating higher bits each clock cycle than binary. Moreover, we demonstrate in this paper, combining these disciplines we can construct powerful multiple-valued reversible logic structures. In this paper a reversible block implemented by pseudo floatinggate can perform AD-function and a DA-function as its reverse application.

Keywords: Reversible logic, bi-directional, Pseudo floating-gate(PFG), multiple-valued logic (MVL).

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68 Design and Layout of Two Stage High Band Width Operational Amplifier

Authors: Yasir Mahmood Qureshi

Abstract:

This paper presents the design and layout of a two stage, high speed operational amplifiers using standard 0.35um CMOS technology. The design procedure involves designing the bias circuit, the differential input pair, and the gain stage using CAD tools. Both schematic and layout of the operational amplifier along with the comparison in the results of the two has been presented. The operational amplifier designed, has a gain of 93.51db at low frequencies. It has a gain bandwidth product of 55.07MHz, phase margin of 51.9º and a slew rate of 22v/us for a load of capacitor of 10pF.

Keywords: Gain bandwidth product, Operational Amplifier, phase margin, slew rate.

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67 A 16Kb 10T-SRAM with 4x Read-Power Reduction

Authors: Pardeep Singh, Sanjay Sharma, Parvinder S. Sandhu

Abstract:

This work aims to reduce the read power consumption as well as to enhance the stability of the SRAM cell during the read operation. A new 10-transisor cell is proposed with a new read scheme to minimize the power consumption within the memory core. It has separate read and write ports, thus cell read stability is significantly improved. A 16Kb SRAM macro operating at 1V supply voltage is demonstrated in 65 nm CMOS process. Its read power consumption is reduced to 24% of the conventional design. The new cell also has lower leakage current due to its special bit-line pre-charge scheme. As a result, it is suitable for low-power mobile applications where power supply is restricted by the battery.

Keywords: A 16Kb 10T-SRAM, 4x Read-Power Reduction

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66 A Capacitive Sensor Interface Circuit Based on Phase Differential Method

Authors: H. A. Majid, N. Razali, M. S. Sulaiman, A. K. A'ain

Abstract:

A new interface circuit for capacitive sensor is presented. This paper presents the design and simulation of soil moisture capacitive sensor interface circuit based on phase differential technique. The circuit has been designed and fabricated using MIMOS- 0.35"m CMOS technology. Simulation and test results show linear characteristic from 36 – 52 degree phase difference, representing 0 – 100% in soil moisture level. Test result shows the circuit has sensitivity of 0.79mV/0.10 phase difference, translating into resolution of 10% soil moisture level.

Keywords: Capacitive sensor, interface, phase differential.

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65 Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Authors: Dipankar Nag, Choe Andrew Kunil, Kevin Chai Tshun Chuan, Minkyu Je

Abstract:

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Keywords: Analog front end, Capacitance-to-Voltage Converter, Magnetometer, MEMS, Recycling Folded Cascode.

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64 Bidirectional Chaotic Synchronization of Non-Autonomous Circuit and its Application for Secure Communication

Authors: Mada Sanjaya, Halimatussadiyah, Dian Syah Maulana

Abstract:

The nonlinear chaotic non-autonomous fourth order system is algebraically simple but can generate complex chaotic attractors. In this paper, non-autonomous fourth order chaotic oscillator circuits were designed and simulated. Also chaotic nonautonomous Attractor is addressed suitable for chaotic masking communication circuits using Matlab® and MultiSIM® programs. We have demonstrated in simulations that chaos can be synchronized and applied to signal masking communications. We suggest that this phenomenon of chaos synchronism may serve as the basis for little known chaotic non-autonomous Attractor to achieve signal masking communication applications. Simulation results are used to visualize and illustrate the effectiveness of non-autonomous chaotic system in signal masking. All simulations results performed on nonautonomous chaotic system are verify the applicable of secure communication.

Keywords: Bidirectional chaotic synchronization, double bellattractor, secure communication

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63 A Low-Area Fully-Reconfigurable Hardware Design of Fast Fourier Transform System for 3GPP-LTE Standard

Authors: Xin-Yu Shih, Yue-Qu Liu, Hong-Ru Chou

Abstract:

This paper presents a low-area and fully-reconfigurable Fast Fourier Transform (FFT) hardware design for 3GPP-LTE communication standard. It can fully support 32 different FFT sizes, up to 2048 FFT points. Besides, a special processing element is developed for making reconfigurable computing characteristics possible, while first-in first-out (FIFO) scheduling scheme design technique is proposed for hardware-friendly FIFO resource arranging. In a synthesis chip realization via TSMC 40 nm CMOS technology, the hardware circuit only occupies core area of 0.2325 mm2 and dissipates 233.5 mW at maximal operating frequency of 250 MHz.

Keywords: Reconfigurable, fast Fourier transform, single-path delay feedback, 3GPP-LTE.

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