Search results for: current conveyor.
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2522

Search results for: current conveyor.

2432 Turbulence Modeling and Wave-Current Interactions

Authors: A.-C. Bennis, F. Dumas, F. Ardhuin, B. Blanke

Abstract:

The mechanics of rip currents are complex, involving interactions between waves, currents, water levels and the bathymetry, that present particular challenges for numerical models. Here, the effects of a grid-spacing dependent horizontal mixing on the wave-current interactions are studied. Near the shore, wave rays diverge from channels towards bar crests because of refraction by topography and currents, in a way that depends on the rip current intensity which is itself modulated by the horizontal mixing. At low resolution with the grid-spacing dependent horizontal mixing, the wave motion is the same for both coupling modes because the wave deviation by the currents is weak. In high resolution case, however, classical results are found with the stabilizing effect of the flow by feedback of waves on currents. Lastly, wave-current interactions and the horizontal mixing strongly affect the intensity of the three-dimensional rip velocity.

Keywords: Numerical modeling, Rip currents, Turbulence modeling, Wave-current interactions.

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2431 Characterization of the In0.53Ga0.47As n+nn+ Photodetectors

Authors: Fatima Zohra Mahi, Luca Varani

Abstract:

We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detective parameter for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed by considering the free carries fluctuations. The responsivity and the detection parameter are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure.

Keywords: Responsivity, detection parameter, photo-detectors, continuity equation, current noise.

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2430 Improved Small-Signal Characteristics of Infrared 850 nm Top-Emitting Vertical-Cavity Lasers

Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear

Abstract:

High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f-3dB) of 14 GHz and a resonance frequency (fR) of 9.5 GHz at a bias current density (Jbias) of only 4.3 kA/cm2, which corresponds to an improved f-3dB2/Jbias ratio of 44 GHz2/kA/cm2. At higher and lower bias current densities, the f-3dB2/ Jbias ratio decreased to about 30 GHz2/kA/cm2 and 18 GHz2/kA/cm2, respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f-3dB/ fR ratio of 1.41±10% over the whole range of the bias current (1.3Ith to 6.2Ith). The devices also demonstrated a maximum modulation bandwidth (f-3dB max) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.

Keywords: Current density, High-speed VCSELs, Modulation bandwidth, Small-Signal Characteristics, Thermal impedance, Vertical-cavity surface-emitting lasers.

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2429 Simulation of Effect of Current Stressing on Reliability of Solder Joints with Cu-Pillar Bumps

Authors: Y. Li, Q. S. Zhang, H. Z. Huang, B. Y. Wu

Abstract:

The mechanism behind the electromigration and thermomigration failure in flip-chip solder joints with Cu-pillar bumps was investigated in this paper through using finite element method. Hot spot and the current crowding occurrs in the upper corner of copper column instead of solders of the common solder ball. The simulation results show that the change in thermal gradient is noticeable, which might greatly affect the reliability of solder joints with Cu-pillar bumps under current stressing. When the average applied current density is increased from 1×104 A/cm2 to 3×104 A/cm2 in solders, the thermal gradient would increase from 74 K/cm to 901 K/cm at an ambient temperature of 25°C. The force from thermal gradient of 901 K/cm can nearly induce thermomigration by itself. With the increase in applied current, the thermal gradient is growing. It is proposed that thermomigration likely causes a serious reliability issue for Cu column based interconnects.

Keywords: Simulation, Cu-pillar bumps, Electromigration, Thermomigration.

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2428 The Comparison Study of Current Control Techniques for Active Power Filters

Authors: T. Narongrit, K-L. Areerak, K-N. Areerak

Abstract:

This paper presents the comparison study of current control techniques for shunt active power filter. The hysteresis current control, the delta modulation control and the carrier-based PWM control are considered in the paper. The synchronous detection method is used to calculate the reference currents for shunt active power filter. The simulation results show that the carrier-based PWM control technique provides the minimum %THD value of the source currents compared with other comparable techniques after compensation. However, the %THD values of all three techniques can follow the IEEE std.519-1992.

Keywords: hysteresis current control, delta modulation current control, pulse width modulation control, shunt active power filter, synchronous detection.

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2427 Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords: Gate tunneling current, analytical model, gate dielectrics, non uniform poly gate doping, MOSFET, fringing field effect and image charges.

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2426 Factors Affecting Current Ratings for Underground and Air Cables

Authors: S. H. Alwan, J. Jasni, M. Z. A. Ab Kadir, N. Aziz

Abstract:

The aim of this paper is to present a parametric study to determine the major factors that influence the calculations of current rating for both air and underground cables. The current carrying capability of the power cables rely largely on the installation conditions and material properties. In this work, the influences on ampacity of conductor size, soil thermal resistivity and ambient soil temperature for underground installations are shown. The influences on the current-carrying capacity of solar heating (time of day effects and intensity of solar radiation), ambient air temperature and cable size for cables air are also presented. IEC and IEEE standards are taken as reference.

Keywords: Cable ampacity, underground cable, IEC standard, air cables.

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2425 The Effect of Dynamic Eccentricity on Induction Machine Stator Currents (Part A)

Authors: Saleh S. Hamad Elawgali

Abstract:

Current spectrums of a high power induction machine was calculated for the cases of full symmetry, static and dynamic eccentricity. The calculations involve integration of 93 electrical plus four mechanical ordinary differential equations. Electrical equations account for variable inductances affected by slotting and eccentricities. The calculations were followed by Fourier analysis of the stator currents in steady state operation. The paper presents the stator current spectrums in full symmetry, static and dynamic eccentricity cases, and demonstrates the harmonics present in each case. The effect of dynamic eccentricity is demonstrating via comparing the current spectrums related to dynamic eccentricity cases with the full symmetry one. The paper includes one case study, refers to dynamic eccentricity, to present the spectrum of the measured current and demonstrate the existence of the harmonics related to dynamic eccentricity. The zooms of current spectrums around the main slot harmonic zone are included to simplify the comparison and prove the existence of the dynamic eccentricity harmonics in both calculated and measured current spectrums.

Keywords: Current spectrum, diagnostics, harmonics, Induction machine

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2424 A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: Gate tunneling current, analytical model, spacer dielectrics, DIBL, subthreshold slope.

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2423 Star-Hexagon Transformer Supported UPQC

Authors: Yash Pal, A.Swarup, Bhim Singh

Abstract:

A new topology of unified power quality conditioner (UPQC) is proposed for different power quality (PQ) improvement in a three-phase four-wire (3P-4W) distribution system. For neutral current mitigation, a star-hexagon transformer is connected in shunt near the load along with three-leg voltage source inverters (VSIs) based UPQC. For the mitigation of source neutral current, the uses of passive elements are advantageous over the active compensation due to ruggedness and less complexity of control. In addition to this, by connecting a star-hexagon transformer for neutral current mitigation the over all rating of the UPQC is reduced. The performance of the proposed topology of 3P-4W UPQC is evaluated for power-factor correction, load balancing, neutral current mitigation and mitigation of voltage and currents harmonics. A simple control algorithm based on Unit Vector Template (UVT) technique is used as a control strategy of UPQC for mitigation of different PQ problems. In this control scheme, the current/voltage control is applied over the fundamental supply currents/voltages instead of fast changing APFs currents/voltages, thereby reducing the computational delay. Moreover, no extra control is required for neutral source current compensation; hence the numbers of current sensors are reduced. The performance of the proposed topology of UPQC is analyzed through simulations results using MATLAB software with its Simulink and Power System Block set toolboxes.

Keywords: Power-factor correction, Load balancing, UPQC, Voltage and Current harmonics, Neutral current mitigation, Starhexagon transformer.

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2422 Loss Analysis of Half Bridge DC-DC Converters in High-Current and Low-Voltage Applications

Authors: A. Faruk Bakan, İsmail Aksoy, Nihan Altintaş

Abstract:

In this paper, half bridge DC-DC converters with transformer isolation presented in the literature are analyzed for highcurrent and low-voltage applications under the same operation conditions, and compared in terms of losses and efficiency. The conventional and improved half-bridge DC-DC converters are simulated, and current and voltage waveforms are obtained for input voltage Vdc=500V, output current IO=450A, output voltage VO=38V and switching frequency fS=20kHz. IGBTs are used as power semiconductor switches. The power losses of the semiconductor devices are calculated from current and voltage waveforms. From simulation results, it is seen that the capacitor switched half bridge converter has the best efficiency value, and can be preferred at high power and high frequency applications.

Keywords: Isolated half bridge DC-DC converter, high-current low-voltage applications, soft switching, high efficiency.

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2421 An Artificial Emotion Model For Visualizing Emotion of Characters

Authors: Junseok Ham, Chansun Jung, Junhyung Park, Jihye Ryeo, Ilju Ko

Abstract:

It is hard to express emotion through only speech when we watch a character in a movie or a play because we cannot estimate the size, kind, and quantity of emotion. So this paper proposes an artificial emotion model for visualizing current emotion with color and location in emotion model. The artificial emotion model is designed considering causality of generated emotion, difference of personality, difference of continual emotional stimulus, and co-relation of various emotions. This paper supposed the Emotion Field for visualizing current emotion with location, and current emotion is expressed by location and color in the Emotion Field. For visualizing changes within current emotion, the artificial emotion model is adjusted to characters in Hamlet.

Keywords: Emotion, Artificial Emotion, Visualizing, EmotionModel.

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2420 Optimal Switching Strategies for Tracking of Currents of Voltage Source Converters

Authors: R. Oloomi, M. A. Sadrnia

Abstract:

This paper proposes a new optimal feedback controller for voltage source converters VSC's, for current regulated voltage source converters, which allows compensate the harmonics of current produced by nonlinear loads and load reactive power. The aim of the present paper is to describe a novel switching signal generation technique called optimal controller which guarantees that the injected currents follow the reference currents determined by the compensation strategy, with the smallest possible tracking error and fixed switching frequency. It is compared with well-known hysteresis current controller HCC. The validity of presented method and its comparison with HCC is studied through simulation results.

Keywords: Hysteresis Current Controller, Optimal Controller, Switching pattern, Voltage Source Converter.

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2419 Mathematical Modeling of Current Harmonics Caused by Personal Computers

Authors: Rana Abdul Jabbar Khan, Muhammad Akmal

Abstract:

Personal computers draw non-sinusoidal current with odd harmonics more significantly. Power Quality of distribution networks is severely affected due to the flow of these generated harmonics during the operation of electronic loads. In this paper, mathematical modeling of odd harmonics in current like 3rd, 5th, 7th and 9th influencing the power quality has been presented. Live signals have been captured with the help of power quality analyzer for analysis purpose. The interesting feature is that Total Harmonic Distortion (THD) in current decreases with the increase of nonlinear loads has been verified theoretically. The results obtained using mathematical expressions have been compared with the practical results and exciting results have been found.

Keywords: Harmonic Distortion, Mathematical Modeling, Power Quality.

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2418 Wireless Neural Stimulator with Adjustable Electrical Quantity

Authors: Young-Seok Choi

Abstract:

The neural stimulation has been gaining much interest in neuromodulation research and clinical trials. For efficiency, there is a need for variable electrical stimulation such as current and voltage stimuli as well as wireless framework. In this regard, we develop the wireless neural stimulator capable of voltage and current stimuli. The system consists of ZigBee which is a wireless communication module and stimulus generator. The stimulus generator with 8-bits resolution enable both mono-polar and bi-polar waveform in voltage (-3.3~3.3V) and current(-330~330µA) stimulus mode which is controllable. The experimental results suggest that the proposed neural stimulator can play a role as an effective approach for neuromodulation.

Keywords: Neural stimulator, current stimulation, voltage stimulation, neuromodulation

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2417 Bifurcation Study and Parameter Analyses Boost Converter

Authors: S. Ben Said, K. Ben Saad, M. Benrejeb

Abstract:

This paper deals with bifurcation analyses in current programmed DC/DC Boost converter and exhibition of chaotic behavior. This phenomenon occurs due to variation of a set of the studied circuit parameters (input voltage and a reference current). Two different types of bifurcation paths have been observed as part as part of another bifurcation arising from variation of suitable chosen parameter.

Keywords: Bifurcation, Chaos, Boost converter, Current- programmed control, Initial parameters.

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2416 Increasing the Forecasting Fidelity of Current Collection System Operating Capability by Means of Contact Pressure Simulation Modelling

Authors: Anton Golubkov, Gleb Ermachkov, Aleksandr Smerdin, Oleg Sidorov, Victor Philippov

Abstract:

Current collection quality is one of the limiting factors when increasing trains movement speed in the rail sector. With the movement speed growth, the impact forces on the current collector from the rolling stock and the aerodynamic influence increase, which leads to the spread in the contact pressure values, separation of the current collector head from the contact wire, contact arcing and excessive wear of the contact elements. The upcoming trend in resolving this issue is the use of the automatic control systems providing stabilization of the contact pressure value. The present paper considers the features of the contemporary automatic control systems of the current collector’s pressure; their major disadvantages have been stated. A scheme of current collector pressure automatic control has been proposed, distinguished by a proactive influence on undesirable effects. A mathematical model of contact strips wearing has been presented, obtained in accordance with the provisions of the central composition rotatable design program. The analysis of the obtained dependencies has been carried out. The procedures for determining the optimal current collector pressure on the contact wire and the pressure control principle in the pneumatic drive have been described.

Keywords: High-speed running, current collector, contact strip, mathematical model, contact pressure, program control, wear, life cycle.

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2415 Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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2414 The Mechanical and Electrochemical Properties of DC-Electrodeposited Ni-Mn Alloy Coating with Low Internal Stress

Authors: Chun-Ying Lee, Kuan-Hui Cheng, Mei-Wen Wu

Abstract:

The nickel-manganese (Ni-Mn) alloy coating prepared from DC electrodeposition process in sulphamate bath was studied. The effects of process parameters, such as current density and electrolyte composition, on the cathodic current efficiency, microstructure, internal stress and mechanical properties were investigated. Because of its crucial effect on the application to the electroforming of microelectronic components, the development of low internal stress coating with high leveling power was emphasized. It was found that both the coating’s manganese content and the cathodic current efficiency increased with the raise in current density. In addition, the internal stress of the deposited coating showed compressive nature at low current densities while changed to tensile one at higher current densities. Moreover, the metallographic observation, X-ray diffraction measurement, and polarization curve measurement were conducted. It was found that the Ni-Mn coating consisted of nano-sized columnar grains and the maximum hardness of the coating was associated with (111) preferred orientation in the microstructure. The grain size was refined along with the increase in the manganese content of the coating, which accordingly, raised its hardness and resistance to annealing softening. In summary, the Ni-Mn coating prepared at lower current density of 1-2 A/dm2 had low internal stress, high leveling power, and better corrosion resistance.

Keywords: DC plating, internal stress, leveling power, Ni-Mn coating.

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2413 The Photon-Drag Effect in Cylindrical Quantum Wire with a Parabolic Potential

Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

Abstract:

Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: Photon-drag effect, constant current density, quantum wire, parabolic potential.

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2412 Effect of Inductance Ratio on Operating Frequencies of a Hybrid Resonant Inverter

Authors: Mojtaba Ghodsi, Hamidreza Ziaifar, Morteza Mohammadzaheri, Payam Soltani

Abstract:

In this paper, the performance of a medium power (25 kW/25 kHz) hybrid inverter with a reactive transformer is investigated. To analyze the sensitivity of the inverster, the RSM technique is employed to manifest the effective factors in the inverter to minimize current passing through the Insulated Bipolar Gate Transistors (IGBTs) (current stress). It is revealed that the ratio of the axillary inductor to the effective inductance of resonant inverter (N), is the most effective parameter to minimize the current stress in this type of inverter. In practice, proper selection of N mitigates the current stress over IGBTs by five times. This reduction is very helpful to keep the IGBTs at normal temperatures.

Keywords: Analytical analysis, hybrid resonant inverter, reactive transformer, response surface method.

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2411 A Simplified Approach for Load Flow Analysis of Radial Distribution Network

Authors: K. Vinoth Kumar, M.P. Selvan

Abstract:

This paper presents a simple approach for load flow analysis of a radial distribution network. The proposed approach utilizes forward and backward sweep algorithm based on Kirchoff-s current law (KCL) and Kirchoff-s voltage law (KVL) for evaluating the node voltages iteratively. In this approach, computation of branch current depends only on the current injected at the neighbouring node and the current in the adjacent branch. This approach starts from the end nodes of sub lateral line, lateral line and main line and moves towards the root node during branch current computation. The node voltage evaluation begins from the root node and moves towards the nodes located at the far end of the main, lateral and sub lateral lines. The proposed approach has been tested using four radial distribution systems of different size and configuration and found to be computationally efficient.

Keywords: constant current load, constant impedance load, constant power load, forward–backward sweep, load flow analysis, radial distribution system.

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2410 Triple Intercell Bar for Electrometallurgical Processes: A Design to Increase PV Energy Utilization

Authors: Eduardo P. Wiechmann, Jorge A. Henríquez, Pablo E. Aqueveque, Luis G. Muñoz

Abstract:

PV energy prices are declining rapidly. To take advantage of the benefits of those prices and lower the carbon footprint, operational practices must be modified. Undoubtedly, it challenges the electrowinning practice to operate at constant current throughout the day. This work presents a technology that contributes in providing modulation capacity to the electrode current distribution system. This is to raise the day time dc current and lower it at night. The system is a triple intercell bar that operates in current-source mode. The design is a capping board free dogbone type of bar that ensures an operation free of short circuits, hot swapability repairs and improved current balance. This current-source system eliminates the resetting currents circulating in equipotential bars. Twin auxiliary connectors are added to the main connectors providing secure current paths to bypass faulty or impaired contacts. All system conductive elements are positioned over a baseboard offering a large heat sink area to the ventilation of a facility. The system works with lower temperature than a conventional busbar. Of these attributes, the cathode current balance property stands out and is paramount for day/night modulation and the use of photovoltaic energy. A design based on a 3D finite element method model predicting electric and thermal performance under various industrial scenarios is presented. Preliminary results obtained in an electrowinning facility with industrial prototypes are included.

Keywords: Electrowinning, intercell bars, PV energy, current modulation.

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2409 A ZVT-ZCT-PWM DC-DC Boost Converter with Direct Power Transfer

Authors: Naim Suleyman Ting, Yakup Sahin, Ismail Aksoy

Abstract:

This paper presents a zero voltage transition-zero current transition (ZVT-ZCT)-PWM DC-DC boost converter with direct power transfer. In this converter, the main switch turns on with ZVT and turns off with ZCT. The auxiliary switch turns on and off with zero current switching (ZCS). The main diode turns on with ZVS and turns off with ZCS. Besides, the additional current or voltage stress does not occur on the main device. The converter has features as simple structure, fast dynamic response and easy control. Also, the proposed converter has direct power transfer feature as well as excellent soft switching techniques. In this study, the operating principle of the converter is presented and its operation is verified for 1 kW and 100 kHz model.

Keywords: Direct power transfer, boost converter, zero-voltage transition, zero-current transition.

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2408 Transient Three Dimensional FE Modeling for Thermal Analysis of Pulsed Current Gas Tungsten Arc Welding of Aluminum Alloy

Authors: N. Karunakaran, V. Balasubramanian

Abstract:

This paper presents the results of a study aimed at establishing the temperature distribution during the welding of aluminum alloy plates by Pulsed Current Gas Tungsten Arc Welding (PCGTAW) and Constant Current Gas Tungsten Arc Welding (CCGTAW) processes. Pulsing of the GTA welding current influences the dimensions and solidification rate of the fused zone, it also reduces the weld pool volume hence a narrower bead. In this investigation, the base material considered was aluminum alloy AA 6351 T6, which is finding use in aircraft, automobile and high-speed train components. A finite element analysis was carried out using ANSYS, and the results of the FEA were compared with the experimental results. It is evident from the study that the finite element analysis using ANSYS can be effectively used to model PCGTAW process for finding temperature distribution.

Keywords: Gas tungsten arc welding, pulsed current, finite element analysis, thermal analysis, aluminum alloy.

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2407 Analysis of Direct Current Motor in LabVIEW

Authors: E. Ramprasath, P. Manojkumar, P. Veena

Abstract:

DC motors have been widely used in the past centuries which are proudly known as the workhorse of industrial systems until the invention of the AC induction motors which makes a huge revolution in industries. Since then, the use of DC machines has been decreased due to enormous factors such as reliability, robustness and complexity but it lost its fame due to the losses. In this paper a new methodology is proposed to construct a DC motor through the simulation in LabVIEW to get an idea about its real time performances, if a change in parameter might have bigger improvement in losses and reliability.

Keywords: Direct Current motor, LabVIEW software, modelling and analysis, overall characteristics of Direct Current motor.

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2406 High Level Characterization and Optimization of Switched-Current Sigma-Delta Modulators with VHDL-AMS

Authors: A. Fakhfakh, N. Ksentini, M. Loulou, N. Masmoudi, J. J. Charlot

Abstract:

Today, design requirements are extending more and more from electronic (analogue and digital) to multidiscipline design. These current needs imply implementation of methodologies to make the CAD product reliable in order to improve time to market, study costs, reusability and reliability of the design process. This paper proposes a high level design approach applied for the characterization and the optimization of Switched-Current Sigma- Delta Modulators. It uses the new hardware description language VHDL-AMS to help the designers to optimize the characteristics of the modulator at a high level with a considerably reduced CPU time before passing to a transistor level characterization.

Keywords: high level design, optimization, switched-Current Sigma-Delta Modulators, VHDL-AMS.

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2405 A Double PWM Source Inverter Technique with Reduced Leakage Current for Application on Standalone Systems

Authors: Md. Noman Habib Khan, S. Khan, T. S. Gunawan, R. I. Boby

Abstract:

The photovoltaic (PV) panel with no galvanic isolation system is well known technique in the world which is effective and delivers power with enhanced efficiency. The PV generation presented here is for stand-alone system installed in remote areas when as the resulting power gets connected to electronic load installation instead of being tied to the grid. Though very small, even then transformer-less topology is shown to be with leakage in pico-ampere range. By using PWM technique PWM, leakage current in different situations is shown. The results shown in this paper show how the pico-ampere current is reduced to femto-ampere through use of inductors and capacitors of suitable values of inductor and capacitors with the load.

Keywords: Photovoltaic (PV) panel, Duty cycle, Pulse Duration Modulation (PDM), Leakage current.

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2404 Effect of Chemical Pretreatments and Dehydration Methods on Quality Characteristics of Tomato Powder and Its Storage Stability

Authors: Reihaneh Ahmadzadeh Ghavidel, Mehdi Ghiafeh Davoodi

Abstract:

Dehydration process was carried out for tomato slices of var. Avinash after giving different pre-treatments such as calcium chloride (CaCl2), potassium metabisulphite (KMS), calcium chloride and potassium metabisulphite (CaCl2 +KMS), and sodium chloride (NaCl). Untreated samples served as control. Solar drier and continuous conveyor (tunnel) drier were used for dehydration. Quality characteristics of tomato slices viz. moisture content, sugar, titratable acidity, lycopene content, dehydration ratio, rehydration ratio and non-enzymatic browning as affected by dehydration process were studied. Storage study was also carried out for a period of six months for tomato powder packed into different types of packaging materials viz. metalized polyester (MP) film and low density poly ethylene (LDPE). Changes in lycopene content and non-enzymatic browning (NEB) were estimated during storage at room temperature. Pretreatment of 5 mm thickness of tomato slices with calcium chloride in combination with potassium metabisulphite and drying using a tunnel drier with subsequent storage of product in metalized polyester bags was selected as the best process.

Keywords: Drying pretreatments, Solar drying, Tomato powder, Tunnel drying

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2403 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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