Search results for: Pass transistor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 289

Search results for: Pass transistor

259 Design of Two-Channel Quadrature Mirror Filter Banks Using Digital All-Pass Filters

Authors: Ju-Hong Lee, Yi-Lin Shieh

Abstract:

The paper deals with the minimax design of two-channel linear-phase (LP) quadrature mirror filter (QMF) banks using infinite impulse response (IIR) digital all-pass filters (DAFs). Based on the theory of two-channel QMF banks using two IIR DAFs, the design problem is appropriately formulated to result in an appropriate Chebyshev approximation for the desired group delay responses of the IIR DAFs and the magnitude response of the low-pass analysis filter. Through a frequency sampling and iterative approximation method, the design problem can be solved by utilizing a weighted least squares approach. The resulting two-channel QMF banks can possess approximately LP response without magnitude distortion. Simulation results are presented for illustration and comparison.

Keywords: Chebyshev approximation, Digital All-Pass Filter, Quadrature Mirror Filter, Weighted Least Squares.

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258 Recovery of Missing Samples in Multi-channel Oversampling of Multi-banded Signals

Authors: J. M. Kim, K. H. Kwon

Abstract:

We show that in a two-channel sampling series expansion of band-pass signals, any finitely many missing samples can always be recovered via oversampling in a larger band-pass region. We also obtain an analogous result for multi-channel oversampling of harmonic signals.

Keywords: oversampling, multi-channel sampling, recovery of missing samples, band-pass signal, harmonic signal

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257 Performance Analysis of BPJLT with Different Gate and Spacer Materials

Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: BPJLT, double gate, high-k, spacer.

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256 A Resistorless High Input Impedance First Order All-Pass Filter Using CCCIIs

Authors: Kapil Dev Sharma, Kirat Pal, Costas Psychalinos

Abstract:

A new first order all-pass filter topology realized using current controlled current conveyors (CCCIIs) is introduced in this paper. Offered benefits are the high-impedance of the input node, the absence of external resistors because of the usage of CCCIIs with positive and negative intrinsic resistances, the presence of only grounded capacitors, and the capability of electronic adjustment of the phase shift through a single bias current. The correct operation of the introduced topology is conformed through simulation results, while its behavior is evaluated through comparison results.

Keywords: Active filters, All-pass filters, Analog signal processing, Current conveyors.

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255 Swarm Intelligence based Optimal Linear Phase FIR High Pass Filter Design using Particle Swarm Optimization with Constriction Factor and Inertia Weight Approach

Authors: Sangeeta Mandal, Rajib Kar, Durbadal Mandal, Sakti Prasad Ghoshal

Abstract:

In this paper, an optimal design of linear phase digital high pass finite impulse response (FIR) filter using Particle Swarm Optimization with Constriction Factor and Inertia Weight Approach (PSO-CFIWA) has been presented. In the design process, the filter length, pass band and stop band frequencies, feasible pass band and stop band ripple sizes are specified. FIR filter design is a multi-modal optimization problem. The conventional gradient based optimization techniques are not efficient for digital filter design. Given the filter specifications to be realized, the PSO-CFIWA algorithm generates a set of optimal filter coefficients and tries to meet the ideal frequency response characteristic. In this paper, for the given problem, the designs of the optimal FIR high pass filters of different orders have been performed. The simulation results have been compared to those obtained by the well accepted algorithms such as Parks and McClellan algorithm (PM), genetic algorithm (GA). The results justify that the proposed optimal filter design approach using PSOCFIWA outperforms PM and GA, not only in the accuracy of the designed filter but also in the convergence speed and solution quality.

Keywords: FIR Filter; PSO-CFIWA; PSO; Parks and McClellanAlgorithm, Evolutionary Optimization Technique; MagnitudeResponse; Convergence; High Pass Filter

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254 A New Current-mode Multifunction Filter with High Impedance Outputs Using Minimum Number of Passive Elements

Authors: Mehmet Sagbas, Kemal Fidanboylu, Mehmet C. Bayram

Abstract:

A new current-mode multifunction filter using minimum number of passive elements is proposed. The proposed filter has single-input and four high-impedance outputs. It uses four passive elements (two capacitors and two resistors) and four dual output second generation current conveyors. Each output provides a different filter response, namely, low-pass, high-pass, band-pass and band-reject. The sensitivity analysis is also carried out on both ideal and non-ideal filter configurations. The validity of the proposed filter is verified through PSPICE simulations.

Keywords: Active filter, Universal filter, Currentconveyors.

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253 An Improved QRS Complex Detection for Online Medical Diagnosis

Authors: I. L. Ahmad, M. Mohamed, N. A. Ab. Ghani

Abstract:

This paper presents the work of signal discrimination specifically for Electrocardiogram (ECG) waveform. ECG signal is comprised of P, QRS, and T waves in each normal heart beat to describe the pattern of heart rhythms corresponds to a specific individual. Further medical diagnosis could be done to determine any heart related disease using ECG information. The emphasis on QRS Complex classification is further discussed to illustrate the importance of it. Pan-Tompkins Algorithm, a widely known technique has been adapted to realize the QRS Complex classification process. There are eight steps involved namely sampling, normalization, low pass filter, high pass filter (build a band pass filter), derivation, squaring, averaging and lastly is the QRS detection. The simulation results obtained is represented in a Graphical User Interface (GUI) developed using MATLAB.

Keywords: ECG, Pan Tompkins Algorithm, QRS Complex, Simulation

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252 Resistor-less Current-mode Universal Biquad Filter Using CCTAs and Grounded Capacitors

Authors: T. Thosdeekoraphat, S. Summart, C. Saetiaw, S. Santalunai, C. Thongsopa

Abstract:

This article presents a current-mode universal biquadratic filter. The proposed circuit can apparently provide standard functions of the biquad filter: low-pass, high-pass, bandpass, band-reject and all-pass functions. The circuit uses 4 current controlled transconductance amplifiers (CCTAs) and 2 grounded capacitors. In addition, the pole frequency and quality factor can be adjusted by electronic method by adjusting the bias currents of the CCTA. The proposed circuit uses only grounded capacitors without additional external resistors, the proposed circuit is considerably appropriate to further developing into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.

Keywords: Resistor-less, Current-mode, Biquad filter, CCTA.

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251 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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250 A New Microstrip Diplexer Using Coupled Stepped Impedance Resonators

Authors: A. Chinig, J. Zbitou, A. Errkik, L. Elabdellaoui, A. Tajmouati, A. Tribak, M. Latrach

Abstract:

This paper presents a new structure of microstrip band pass filter (BPF) based on coupled stepped impedance resonators. Each filter consists of two coupled stepped impedance resonators connected to microstrip feed lines. The coupled junction is utilized to connect the two BPFs to the antenna. This two band pass filters are designed and simulated to operate for the digital communication system (DCS) and Industrial Scientific and Medical (ISM) bands at 1.8 GHz and 2.45 GHz respectively. The proposed circuit presents good performances with an insertion loss lower than 2.3 dB and isolation between the two channels greater than 21 dB. The prototype of the optimized diplexer have been investigated numerically by using ADS Agilent and verified with CST microwave software.

Keywords: Band Pass Filter, coupled junction, coupled stepped impedance resonators, diplexer, insertion loss, isolation.

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249 Modeling Thermo-Photo-Voltaic Selective Emitter Based on a Semi-Transparent Emitter with Integrated Narrow Band-Pass Pre-Filter

Authors: F. Stake

Abstract:

This work is a parametric study combining simple and well known optical theories. These simple theories are arranged to form part of one answer to the question: “Can a semi-transparent Thermo-Photo-Voltaic (TPV) emitter have an optical extinction spectrum so much greater than its optical absorption spectrum that it becomes its own band-pass pre-filter, and if so, how well might it be expected to suppress light of undesired wavelengths?” In the report, hypothetical materials and operating temperatures will be used for comparative analyses only. Thermal emission properties of these hypothetical materials were created using two openly available FORTRAN programs. Results indicate that if using highly transparent materials it may be possible to create a thermal emitter that is its own band-pass pre-filter.

Keywords: Christensen effect, DISORT, index of refraction, scattering.

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248 Current-Mode Resistorless SIMO Universal Filter and Four-Phase Quadrature Oscillator

Authors: Jie Jin

Abstract:

In this paper, a new CMOS current-mode single input and multi-outputs (SIMO) universal filter and quadrature oscillator with a similar circuit are proposed. The circuits only consist of three Current differencing transconductance amplifiers (CDTA) and two grounded capacitors, which are resistorless, and they are suitable for monolithic integration. The universal filter uses minimum CDTAs and passive elements to realize SIMO type low-pass (LP), high-pass (HP), band-pass (BP) band-stop (BS) and all-pass (AP) filter functions simultaneously without any component matching conditions. The angular frequency (ω0) and the quality factor (Q) of the proposed filter can be electronically controlled and tuned orthogonal. By some modifications of the filter, a new current-mode four-phase quadrature oscillator (QO) can be obtained easily. The condition of oscillation (CO) and frequency of oscillation (FO) of the QO can be controlled electronically and independently through the bias current of the CDTAs, and it is suitable for variable frequency oscillator. Moreover, all the passive and active sensitivities of the circuits are low. SPICE simulation results are included to confirm the theory.

Keywords: Universal Filter, Quadrature Oscillator, Current mode, Current differencing transconductance amplifiers.

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247 Structural Simulation of a 4H-Sic Based Optically Controlled Thyristor Using a GaAs Based Optically Triggered Power Transistor and Its Application to DC-DC Boost Converter

Authors: Srikanta Bose, S.K. Mazumder

Abstract:

In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.

Keywords: 4H-SiC, Boost converter, Optical triggering, Power semiconductor device, thyristor.

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246 Hot Deformability of Si-Steel Strips Containing Al

Authors: Mohamed Yousef, Magdy Samuel, Maha El-Meligy, Taher El-Bitar

Abstract:

The present work is dealing with 2% Si-steel alloy. The alloy contains 0.05% C as well as 0.85% Al. The alloy under investigation would be used for electrical transformation purposes. A heating (expansion) - cooling (contraction) dilation investigation was executed to detect the a, a+g, and g transformation temperatures at the inflection points of the dilation curve. On heating, primary a  was detected at a temperature range between room temperature and 687 oC. The domain of a+g was detected in the range between 687 oC and 746 oC. g phase exists in the closed g region at the range between 746 oC and 1043 oC. The domain of a phase appears again at a temperature range between 1043 and 1105 oC, and followed by secondary a at temperature higher than 1105 oC. A physical simulation of thermo-mechanical processing on the as-cast alloy was carried out. The simulation process took into consideration the hot flat rolling pilot plant parameters. The process was executed on the thermo-mechanical simulator (Gleeble 3500). The process was designed to include seven consecutive passes. The 1st pass represents the roughing stage, while the remaining six passes represent finish rolling stage. The whole process was executed at the temperature range from 1100 oC to 900 oC. The amount of strain starts with 23.5% at the roughing pass and decreases continuously to reach 7.5 % at the last finishing pass. The flow curve of the alloy can be abstracted from the stress-strain curves representing simulated passes. It shows alloy hardening from a pass to the other up to pass no. 6, as a result of decreasing the deformation temperature and increasing of cumulative strain. After pass no. 6, the deformation process enhances the dynamic recrystallization phenomena to appear, where the z-parameter would be high.

Keywords: Si-steel, hot deformability, critical transformation temperature, physical simulation, thermo-mechanical processing, flow curve, dynamic softening.

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245 Error-Robust Nature of Genome Profiling Applied for Clustering of Species Demonstrated by Computer Simulation

Authors: Shamim Ahmed Koichi Nishigaki

Abstract:

Genome profiling (GP), a genotype based technology, which exploits random PCR and temperature gradient gel electrophoresis, has been successful in identification/classification of organisms. In this technology, spiddos (Species identification dots) and PaSS (Pattern similarity score) were employed for measuring the closeness (or distance) between genomes. Based on the closeness (PaSS), we can buildup phylogenetic trees of the organisms. We noticed that the topology of the tree is rather robust against the experimental fluctuation conveyed by spiddos. This fact was confirmed quantitatively in this study by computer-simulation, providing the limit of the reliability of this highly powerful methodology. As a result, we could demonstrate the effectiveness of the GP approach for identification/classification of organisms.

Keywords: Fluctuation, Genome profiling (GP), Pattern similarity score (PaSS), Robustness, Spiddos-shift.

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244 A Single-chip Proportional to Absolute Temperature Sensor Using CMOS Technology

Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

Abstract:

Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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243 CRLH and SRR Based Microwave Filter Design Useful for Communication Applications

Authors: Subal Kar, Amitesh Kumar, A. Majumder, S. K. Ghosh, S. Saha, S. S. Sikdar, T. K. Saha

Abstract:

CRLH (composite right/left-handed) based and SRR (split-ring resonator) based filters have been designed at microwave frequency which can provide better performance compared to conventional edge-coupled band-pass filter designed around the same frequency, 2.45 GHz. Both CRLH and SRR are unit cells used in metamaterial design. The primary aim of designing filters with such structures is to realize size reduction and also to realize novel filter performance. The CRLH based filter has been designed in microstrip transmission line, while the SRR based filter is designed with SRR loading in waveguide. The CRLH based filter designed at 2.45 GHz provides an insertion loss of 1.6 dB with harmonic suppression up to 10 GHz with 67 % size reduction when compared with a conventional edge-coupled band-pass filter designed around the same frequency. One dimensional (1-D) SRR matrix loaded in a waveguide shows the possibility of realizing a stop-band with sharp skirts in the pass-band while a stop-band in the pass-band of normal rectangular waveguide with tailoring of the dimensions of SRR unit cells. Such filters are expected to be very useful for communication systems at microwave frequency.

Keywords: BPF, CRLH, Harmonic, Metamaterial, SRR, Waveguide.

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242 Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Authors: K. E. Kaharudin, A. H. Hamidon, F. Salehuddin

Abstract:

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Keywords: DG-MOSFET, pillar, SCE, vertical

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241 IIR Filter design with Craziness based Particle Swarm Optimization Technique

Authors: Suman Kumar Saha, Rajib Kar, Durbadal Mandal, S. P. Ghoshal

Abstract:

This paper demonstrates the application of craziness based particle swarm optimization (CRPSO) technique for designing the 8th order low pass Infinite Impulse Response (IIR) filter. CRPSO, the much improved version of PSO, is a population based global heuristic search algorithm which finds near optimal solution in terms of a set of filter coefficients. Effectiveness of this algorithm is justified with a comparative study of some well established algorithms, namely, real coded genetic algorithm (RGA) and particle swarm optimization (PSO). Simulation results affirm that the proposed algorithm CRPSO, outperforms over its counterparts not only in terms of quality output i.e. sharpness at cut-off, pass band ripple, stop band ripple, and stop band attenuation but also in convergence speed with assured stability.

Keywords: IIR Filter, RGA, PSO, CRPSO, Evolutionary Optimization Techniques, Low Pass (LP) Filter, Magnitude Response, Pole-Zero Plot, Stability.

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240 Design and Analysis of Low-Power, High Speed and Area Efficient 2-Bit Digital Magnitude Comparator in 90nm CMOS Technology Using Gate Diffusion Input

Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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239 Step Height Calibration Using Hamming Window Band-Pass Filter

Authors: Dahi Ghareab Abdelsalam Ibrahim

Abstract:

Axial and lateral measurements of a step depth standard are presented. The axial measurement is performed based on the ISO 5436 profile analysis. The lateral measurement is performed based on the Hamming window band-pass filter method. The method is applied to calibrate a groove structure of a step depth standard of 60 nm. For the axial measurement, the computed results show that the depth of the groove structure is 59.7 ± 0.6 nm. For the lateral measurement, the computed results show that the difference between the two line edges of the groove structure is 151.7 ± 2.5 nm. The method can be applied to any step height/depth regardless of the sharpness of the line edges.

Keywords: Hamming window, band-pass filter, metrology, interferometry.

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238 Evaluation of Algorithms for Sequential Decision in Biosonar Target Classification

Authors: Turgay Temel, John Hallam

Abstract:

A sequential decision problem, based on the task ofidentifying the species of trees given acoustic echo data collectedfrom them, is considered with well-known stochastic classifiers,including single and mixture Gaussian models. Echoes are processedwith a preprocessing stage based on a model of mammalian cochlearfiltering, using a new discrete low-pass filter characteristic. Stoppingtime performance of the sequential decision process is evaluated andcompared. It is observed that the new low pass filter processingresults in faster sequential decisions.

Keywords: Classification, neuro-spike coding, parametricmodel, Gaussian mixture with EM algorithm, sequential decision.

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237 Implementation of ADETRAN Language Using Message Passing Interface

Authors: Akiyoshi Wakatani

Abstract:

This paper describes the Message Passing Interface (MPI) implementation of ADETRAN language, and its evaluation on SX-ACE supercomputers. ADETRAN language includes pdo statement that specifies the data distribution and parallel computations and pass statement that specifies the redistribution of arrays. Two methods for implementation of pass statement are discussed and the performance evaluation using Splitting-Up CG method is presented. The effectiveness of the parallelization is evaluated and the advantage of one dimensional distribution is empirically confirmed by using the results of experiments.

Keywords: Iterative methods, array redistribution, translator, distributed memory.

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236 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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235 Effects of Varying Air Temperature in the Polishing Component of Single-Pass Mill on the Quality of Rice

Authors: M. A. U. Baradi, F. B. Bulao, N. D. Ganotisi, M. Jose C. Regalado, F. P. Bongat, S. B. Manglinong, M. L. O. Quigao, N. G. T. Martinez, R. G. Ancheta, M. P. Ortal

Abstract:

The effects of varying air temperature (full, ¾ full, ½ full aircon adjustment, no aircon) in polishing component of Single-Pass Mill on the quality of Philippine inbred rice variety, was investigated. Parameters measured were milling recovery (MR), headrice recovery (HR), and percentage with bran streaks. Cooling method (with aircon) increased MR, HR, and percentage with bran streaks of milled rice. Highest MR and HR (67.62%; 47.33%) were obtained from ¾ full adjustment whereas no aircon were lowest (66.27%; 39.76%). Temperature in polishing component at ¾ full adjustment was 33oC whereas no aircon was 45oC. There was increase of 1.35% in MR and 7.57% in HR. Additional cost of milling per kg due to aircon cooling was P0.04 at 300 tons/yr volume, with 0.15 yr payback period. Net income was estimated at ₱98,100.00. Percentage of kernels with bran streaks increased from 5%–14%, indicating more nutrients of milled rice.

Keywords: Aircon, air temperature, polishing component, quality, Single-Pass Mill.

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234 Parallel Image Compression and Analysis with Wavelets

Authors: M. Kutila, J. Viitanen

Abstract:

This paper presents image compression with wavelet based method. The wavelet transformation divides image to low- and high pass filtered parts. The traditional JPEG compression technique requires lower computation power with feasible losses, when only compression is needed. However, there is obvious need for wavelet based methods in certain circumstances. The methods are intended to the applications in which the image analyzing is done parallel with compression. Furthermore, high frequency bands can be used to detect changes or edges. Wavelets enable hierarchical analysis for low pass filtered sub-images. The first analysis can be done for a small image, and only if any interesting is found, the whole image is processed or reconstructed.

Keywords: image compression, jpeg, wavelet, vlc

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233 An 880 / 1760 MHz Dual Bandwidth Active RC Filter for 60 GHz Applications

Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

Abstract:

An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: Butterworth filter, active RC, 60 GHz, CMOS, dual bandwidth, Cherry-Hooper amplifier.

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232 Effect of Equal Channel Angular Pressing Process on Impact Property of Pure Copper

Authors: F. Al-Mufadi, F. Djavanroodi

Abstract:

Ultrafine grained (UFG) and nanostructured (NS) materials have experienced a rapid development during the last decade and made profound impact on every field of materials science and engineering. The present work has been undertaken to develop ultrafine grained pure copper by severe plastic deformation method and to examine the impact property by different characterizing tools.

For this aim, equal channel angular pressing die with the channel angle, outer corner angle and channel diameter of 90°, 17° and 20mm had been designed and manufactured. Commercial pure copper billets were ECAPed up to four passes by route BC at the ambient temperature. The results indicated that there is a great improvement at the hardness measurement, yield strength and ultimate tensile strength after ECAP process. It is found that the magnitudes of HV reach 136HV from 52HV after the final pass. Also, about 285% and 125% enhancement at the YS and UTS values have been obtained after the fourth pass as compared to the as-received conditions, respectively. On the other hand, the elongation to failure and impact energy have been reduced by imposing ECAP process and pass numbers. It is needed to say that about 56% reduction in the impact energy have been attained for the samples as contrasted to annealed specimens. 

Keywords: SPD, ECAP, Pure Cu, Impact property.

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231 Design of Two-Channel Quincunx Quadrature Mirror Filter Banks Using Digital All-Pass Lattice Filters

Authors: Ju-Hong Lee, Chong-Jia Ciou

Abstract:

This paper deals with the problem of two-dimensional (2-D) recursive two-channel quincunx quadrature mirror filter (QQMF) banks design. The analysis and synthesis filters of the 2-D recursive QQMF bank are composed of 2-D recursive digital allpass lattice filters (DALFs) with symmetric half-plane (SHP) support regions. Using the 2-D doubly complementary half-band (DC-HB) property possessed by the analysis and synthesis filters, we facilitate the design of the proposed QQMF bank. For finding the coefficients of the 2-D recursive SHP DALFs, we present a structure of 2-D recursive digital allpass filters by using 2-D SHP recursive digital all-pass lattice filters (DALFs). The novelty of using 2-D SHP recursive DALFs to construct a 2-D recursive QQMF bank is that the resulting 2-D recursive QQMF bank provides better performance than the existing 2-D recursive QQMF banks. Simulation results are also presented for illustration and comparison.

Keywords: All-pass digital filter, doubly complementary, lattice structure, symmetric half-plane digital filter, quincunx QMF bank.

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230 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), and ion sensor electronics.

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