Ramses van der Toorn

Publications

1 Verification of the Simultaneous Local Extraction Method of Base and Thermal Resistance of Bipolar Transistors

Authors: Robert Setekera, Luuk Tiemeijer, Ramses van der Toorn

Abstract:

In this paper an extensive verification of the extraction method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction transistors is presented. The method verification is demonstrated on advanced RF SiGe HBTs were the extracted results for the thermal resistance are compared with those from another published method that ignores the effect of Early effect on internal base-emitter voltage and the extracted results of the base resistance are compared with those determined from noise measurements. A self-consistency of our method in the extracted base resistance and thermal resistance using compact model simulation results is also carried out in order to study the level of accuracy of the method.

Keywords: Avalanche, Bipolar Transistor, Thermal Resistance, compact modeling, base resistance, self-heating, Early voltage, parameter extraction

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Abstracts

1 Analysis of the Temperature Dependence of Local Avalanche Compact Model for Bipolar Transistors

Authors: Robert Setekera, Ramses van der Toorn

Abstract:

We present an extensive analysis of the temperature dependence of the local avalanche model used in most of the modern compact models for bipolar transistors. This local avalanche model uses the Chynoweth's empirical law for ionization coefficient to define the generation of the avalanche current in terms of the local electric field. We carry out the model analysis using DC-measurements taken on both Si and advanced SiGe bipolar transistors. For the advanced industrial SiGe-HBTs, we consider both high-speed and high-power devices (both NPN and PNP transistors). The limitations of the local avalanche model in modeling the temperature dependence of the avalanche current mostly in the weak avalanche region are demonstrated. In addition, the model avalanche parameters are analyzed to see if they are in agreement with semiconductor device physics.

Keywords: Electric Field, Bipolar Transistors, impact ionization, avalanche multiplication, avalanche current, compact modeling, local avalanche

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