H. Jafari

Publications

4 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: gamma irradiation, threshold voltage shift, MOS transistor, linear extrapolation

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3 Factor Resistance Comparison of a Long Shaft in 955 and 1055 John Deere Grain Combine

Authors: M. Azadbakht, M. E. Shayan, H. Jafari, E. Ghajarjazi, A. Kiapei

Abstract:

Transmission shafts are affected by various forces, for example, during acceleration or sudden breaks, bending during transportation, vertical forces that lead to cuts. One of the main failures in combines is breaking shaft which repairmen refer it. Structural resistance of canal against torque is very important in the beginning of the movement. For analyzing stress, a typical sample from a type of combine was selected, called JD955 combine. Long shaft in this combine was analyzed with finite element method by Ansys13 generic package under static load. Conducted analysis showed that there is a maximum stress in contact surfaces of indentations and also in place of changing diameter. Safety factor value is low in parts of the shaft and this increases the probability of failure at these points. To improve the conditions with the least cost and an approach of product improvement, using alternative alloy is important.

Keywords: stress, Failure, ANSYS, finite element, shaft, John Deere, Grain Combine harvester

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2 Soil Properties after Plowing with Vertical and Horizontal Axis Rotavator

Authors: M. Azadbakht, B. Azadbakht, R. Janzade Galogah, A. Kiapei, H. Jafari

Abstract:

In this research, performance of rotavator with horizontal rotary axis and vertical rotary axis has been evaluated and compared. The mean weight diameter (MWD), cross-sectional area disturbed and cone index of soil investigated. Factorial experiments based on a randomized complete block with 18 treatments, three different velocities 2.2, 3.5, 6.1 km/h; three different depth of 5, 10, 15cm and with two rotary plows horizontal axis and vertical axis with three replications were used. Result showed that maximum MWD in 6.1 km/h and 15cm of depth were 55.6 and 52.5mm for horizontal axis rotavator, respectively. The minimum MWD in 2.2 km/h and 5cm of depth for vertical axis rotavator were 34.9 and 35.1mm, respectively. The values of cone index 1861.1 and 2339.5 kPa for vertical axis rotavator and horizontal axis rotavator were obtained, respectively, also the values of cross-sectional area disturbed 687 and 497.2cm2 for vertical axis rotavator and horizontal axis rotavator were obtained, respectively.

Keywords: cross-sectional area, rotavator, Horizontal rotary axis, vertical rotary axis, MWD, cone index

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1 Effect of Transplant Preparation Method on Yield and Agronomic Traits of True Potato Seed (TPS) Progenies in Sahneh Region

Authors: A. Khourgami, M. Rafiee, H. Jafari, Z. Bitarafan

Abstract:

To study the effect of suitable methods for propagation of True Potato Seed (TPS) progenies, transplant and selection of the best progenies, a factorial experiment base on a randomized complete block design was carried out in the research field of Sahneh region, Kermanshah, Iran during 2009-2010. Five selective progenies from CIP (International Potato Center) including CIP.994013, CIP.994002, CIP.994014, CIP.888006, and CIP.994001 and two transplant preparation methods (Paper pot preparation for mechanical cultivation and preparation in transplant trays for manual cultivation) were studied in three replications. Results showed that different progenies had no significant effect on plant height (cm) and tuber yield (t ha-1), whereas had a significant effect on number of tubers per unit area (m2). There was significant difference between transplant preparation methods for plant height and tuber yield. The interaction effect of progenies and transplant preparation method was not significant for these traits. CIP.888006 progeny and paper pot preparation method produced the highest tuber yields. Also CIP.994002 and CIP.994014 progenies considered as the best progenies under paper pot preparation method due to high yields.

Keywords: potato, Solanum tuberosum, TPS progenies, Transplant preparation method

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Abstracts

1 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: gamma irradiation, threshold voltage shift, MOS transistor, linear extrapolation

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