Jun-Geol Park

Abstracts

3 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications

Authors: Yong-Seo Koo, Hee-Guk Chae, Kyoung-Il Do, Jeong-Yun Seo, Jun-Geol Park

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: silicon controlled rectifier (SCR), latch-up, power clamp, electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR

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2 Analysis of Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuits with Electrical Characteristics for the 5V Power Clamp

Authors: Yong-Seo Koo, Kyoung-Il Do, Min-ju Kwon, Jun-Geol Park, Kyung-Hyun Park

Abstract:

This paper analyzed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuits with the turn-on time characteristics. The structures are the LVTSCR (Low Voltage Triggered SCR), the ZTSCR (Zener Triggered SCR) and the PTSCR (P-Substrate Triggered SCR). The three structures are for the 5V power clamp. In general, the structures with the low trigger voltage structure can have the fast turn-on characteristics than other structures. All the ESD protection circuits have the low trigger voltage by using the N+ bridge region of LVTSCR, by using the zener diode structure of ZTSCR, by increasing the trigger current of PTSCR. The simulation for the comparison with the turn-on time was conducted by the Synopsys TCAD simulator. As the simulation results, the LVTSCR has the turn-on time of 2.8 ns, ZTSCR of 2.1 ns and the PTSCR of 2.4 ns. The HBM simulation results, however, show that the PTSCR is the more robust structure of 430K in HBM 8kV standard than 450K of LVTSCR and 495K of ZTSCR. Therefore the PTSCR is the most effective ESD protection circuit for the 5V power clamp.

Keywords: ESD, SCR, power clamp, trigger voltage, turn-on time

Procedia PDF Downloads 174
1 Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity

Authors: Yong-Seo Koo, Kyoung-Il Do, Min-ju Kwon, Jun-Geol Park, Kyung-Hyun Park

Abstract:

In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: holding voltage, ESD, SCR, trigger voltage

Procedia PDF Downloads 321