Dr. Sanghoon Park

Committee: International Scientific Committee of Electronics and Communication Engineering
University: Korea Electronics Technology Institute
Department: Convergence Communication Components Research Center
Research Fields: voltage sense amplifier, voltage transition, node stabilization, biasing circuits,

Publications

6 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, node stabilization, multi-inputs, and biasing circuits, voltage transition

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5 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, and biasing circuits

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4 Wideband Tunable RF Filters for Channel Selection in Crowded Spectral Bands

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn, Hyeon-Woo Lee

Abstract:

It is very effective way to utilize a very wide tunable filter in co-existing multi-standards wireless communications environment. Especially, as the long term evolution (LTE) communication era has come, the multi-band coverage is one of the important features required for the RF components. In this paper, we present the frequency conversion technique, and so generate two types of RF filters which are specially designed for the superb tunable ability to support multiple wireless communication standards. With the help of a complex mixing structure, the inherent image signal is suppressed. The RF band-pass filter (BPF) and notch filter achieve 1.8dB and 1.6dB insertion losses and 18 dB and 17 dB attenuations, respectively. The quality factor show greater than 30.

Keywords: Interference, wideband, tunable, channel selection, RF filters, complex mixing, balanced mixer

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3 An 880 / 1760 MHz Dual Bandwidth Active RC Filter for 60 GHz Applications

Authors: Sanghoon Park, Kijin Kim, Kwangho Ahn

Abstract:

An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.

Keywords: CMOS, Butterworth filter, active RC, dual bandwidth, Cherry-Hooper amplifier

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2 20 GHz Fractional Phased Locked Loop Circuit for the Gbps Wireless Communication

Authors: Sanghoon Park, Ki-Jin Kim, K. H. Ahn

Abstract:

This paper presents the 20-GHz fractional PLL (Phase Locked Loop) circuit for the next generation Wi-Fi by using 90 nm TSMC process. The newly suggested millimeter wave 16/17 pre-scalar is designed and verified by measurement to make the fractional PLL having a low quantization noise. The operational bandwidth of the 60 GHz system is 15 % of the carrier frequency which requires large value of Kv (VCO control gain) resulting in degradation of phase noise. To solve this problem, this paper adopts AFC (Automatic Frequency Controller) controlled 4-bit millimeter wave VCO with small value of Kv. Also constant Kv is implemented using 4-bit varactor bank. The measured operational bandwidth is 18.2 ~ 23.2 GHz which is 25 % of the carrier frequency. The phase noise of -58 and -96.2 dBc/Hz at 100 KHz and 1 MHz offset is measured respectively. The total power consumption of the PLL is only 30 mW.

Keywords: Millimeter Wave Fractional PLL, Wide band VCO, WPAN Transceiver

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1 Millimeter Wave I/Q Generation with the Inductive Resonator Matched Poly-Phase Filter

Authors: Sanghoon Park, Ki-Jin Kim, K. H. Ahn

Abstract:

A way of generating millimeter wave I/Q signal using inductive resonator matched poly-phase filter is suggested. Normally the poly-phase filter generates quite accurate I/Q phase and magnitude but the loss of the filter is considerable due to series connection of passive RC components. This loss term directly increases system noise figure when the poly-phase filter is used in RF Front-end. The proposed matching method eliminates above mentioned loss and in addition provides gain on the passive filter. The working algorithm is illustrated by mathematical analysis. The generated I/Q signal is used in implementing millimeter wave phase shifter for the 60 GHz communication system to verify its effectiveness. The circuit is fabricated in 90 nm TSMC RF CMOS process under 1.2 V supply voltage. The measurement results showed that the suggested method improved gain by 6.5 dB and noise by 2.3 dB. The summary of the proposed I/Q generation is compared with previous works.

Keywords: Millimeter Wave Circuits, Local Distribution, I/Q Generator

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Abstracts

3 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits, multi-inputs

Procedia PDF Downloads 411
2 High Power Low Loss CMOS SPDT Antenna Switch for LTE-A Front End Module

Authors: Sanghoon Park, Ki-Jin Kim, K. H. Ahn, Suk-Hui LEE

Abstract:

A high power, low loss asymmetric single pole double through(SPDT) antenna switch for LTE-A Front-End Module(FEM) is presented in this paper by using CMOS technology. For the usage of LTE-A applications, low loss and high linearity are the key features which are very challenging works under CMOS process. To enhance insertion loss(IL) and power handling capability, this paper adopts asymmetric Transmitter (TX) and RX (Receiver) structure, floating body technique, multi-stacked structure, and feed forward capacitor technique. The designed SPDT switch shows TX IL 0.34 dB, RX IL 0.73 dB, P1dB 38.9 dBm at 0.9 GHz and TX IL 0.37 dB, RX IL 0.95 dB, P1dB 39.1 dBm at 2.5 GHz respectively.

Keywords: CMOS switch, SPDT switch, high power CMOS switch, LTE-A FEM

Procedia PDF Downloads 215
1 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 291