Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2

memory effect Related Publications

2 Optical Properties of WO3-NiO Complementary Electrochromic Devices

Authors: Chih-Ming Wang, Chih-Yu Wen, Ying-Chung Chen, Chun-Chieh Wang, Chien-Chung Hsu, Jui-Yang Chang, Jyun-Min Lin

Abstract:

In this study, we developed a complementary electrochromic device consisting of WO3 and NiO films fabricated by rf-magnetron sputtered. The electrochromic properties of WO3 and NiO films were investigated using cyclic voltammograms (CV), performed on WO3 and NiO films immersed in an electrolyte of 1 M LiClO4 in propylene carbonate (PC). Optical and electrochemical of the films, as a function of coloration–bleaching cycle, were characterized using an UV-Vis-NIR spectrophotometer and cyclic voltammetry (CV). After investigating the properties of WO3 film, NiO film, and complementary electrochromic devices, we concluded that this device provides good reversibility, low power consumption of -2.5 V in color state, high variation of transmittance of 58.96%, changes in optical density of 0.81 and good memory effect under open-circuit conditions. In addition, electrochromic component penetration rate can be retained below 20% within 24h, showing preferred memory features; however, component coloring and bleaching response time are about 33s.

Keywords: transmittance, memory effect, Complementary electrochromic device, Rf-magnetron sputtered, Optical density change

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1 Memory Effects in Randomly Perturbed Nematic Liquid Crystals

Authors: Amid Ranjkesh, Milan Ambrožič, Samo Kralj

Abstract:

We study the typical domain size and configuration character of a randomly perturbed system exhibiting continuous symmetry breaking. As a model system we use rod-like objects within a cubic lattice interacting via a Lebwohl–Lasher-type interaction. We describe their local direction with a headless unit director field. An example of such systems represents nematic LC or nanotubes. We further introduce impurities of concentration p, which impose the random anisotropy field-type disorder to directors. We study the domain-type pattern of molecules as a function of p, anchoring strength w between a neighboring director and impurity, temperature, history of samples. In simulations we quenched the directors either from the random or homogeneous initial configuration. Our results show that a history of system strongly influences: i) the average domain coherence length; and ii) the range of ordering in the system. In the random case the obtained order is always short ranged (SR). On the contrary, in the homogeneous case, SR is obtained only for strong enough anchoring and large enough concentration p. In other cases, the ordering is either of quasi long range (QLR) or of long range (LR). We further studied memory effects for the random initial configuration. With increasing external ordering field B either QLR or LR is realized.

Keywords: Liquid crystals, disorder, memory effect, Lebwohl-Lasher model, orientational order

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