Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 5

LDMOS Related Publications

5 A Physically-Based Analytical Model for Reduced Surface Field Laterally Double Diffused MOSFETs

Authors: M. Abouelatta, A. Shaker, M. El-Banna, G. T. Sayah, C. Gontrand, A. Zekry

Abstract:

In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain.

Keywords: Modeling, MATLAB, LDMOS, RESURF, TCAD

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4 A Novel Design in the Use of Planar Transformers for LDMOS Based Amplifiers in Bands II, III, DRM+, DVB-T and DAB+

Authors: Antonis Constantinides, Christos Yiallouras

Abstract:

The coaxial transformer-coupled push-pull circuitry has been used widely in HF and VHF amplifiers for many decades without significant changes in the topology of the transformers. Basic changes over the years concerned the construction and turns ratio of the transformers as has been imposed upon the newer technologies active devices demands. The balun transmission line transformers applied in push-pull amplifiers enable input/output impedance transformation, but are mainly used to convert the balanced output into unbalanced and the input unbalanced into balanced. A simple and affordable alternative solution over the traditional coaxial transformer is the coreless planar balun. A key advantage over the traditional approach lies in the high specifications repeatability; simplifying the amplifier construction requirements as the planar balun constitutes an integrated part of the PCB copper layout. This paper presents the performance analysis of a planar LDMOS MRFE6VP5600 Push-Pull amplifier that enables robust operation in Band III, DVB-T, DVB-T2 standards but functions equally well in Band II, for DRM+ new generation transmitters.

Keywords: LDMOS, amplifier, complex impedance, balun, planar-transformers

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3 Improving the LDMOS Temperature Compensation Bias Circuit to Optimize Back-Off

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, MOSFETs, DVB-T

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2 The Impact of Process Parameters on the Output Characteristics of an LDMOS Device

Authors: M. A. Malakoutian, V. Fathipour, M. Fathipour, A. Mojab, M. M. Allame, M. Moradinasab

Abstract:

In this paper, we have examined the effect of process parameter variation on the electrical characteristics of an LDMOS device. The rate of change in the electrical parameters such as cut off frequency, breakdown voltage and drain saturation current as a function of the process parameters is investigated

Keywords: process parameters, Characteristics, LDMOS, parameter variation

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1 Analysis of a Novel Strained Silicon RF LDMOS

Authors: V.Fathipour, M. A. Malakootian, S. Fathipour, M. Fathipour

Abstract:

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Keywords: LDMOS, High Frequency MOSFET, Design of RF LDMOS, Strained-Silicon

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