Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4

interconnects Related Publications

4 High Temperature Oxidation of Cr-Steel Interconnects in Solid Oxide Fuel Cells

Authors: Taha Mattar, Azza Ahmed, Saeed Ghali

Abstract:

Solid Oxide Fuel Cell (SOFC) is a promising solution for the energy resources leakage. Ferritic stainless steel becomes a suitable candidate for the SOFCs interconnects due to the recent advancements. Different steel alloys were designed to satisfy the needed characteristics in SOFCs interconnect as conductivity, thermal expansion and corrosion resistance. Refractory elements were used as alloying elements to satisfy the needed properties. The oxidation behaviour of the developed alloys was studied where the samples were heated for long time period at the maximum operating temperature to simulate the real working conditions. The formed scale and oxidized surface were investigated by SEM. Microstructure examination was carried out for some selected steel grades. The effect of alloying elements on the behaviour of the proposed interconnects material and the performance during the working conditions of the cells are explored and discussed. Refractory metals alloying of chromium steel seems to satisfy the needed characteristics in metallic interconnects.

Keywords: interconnects, Oxidation, SOFCs, Cr-steel

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3 Graphene/h-BN Heterostructure Interconnects

Authors: Bin Yu, Yang Xu, Nikhil Jain

Abstract:

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h- BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h- BN heterostructure presents a robust material platform towards the implementation of high-speed carbon-based interconnects.

Keywords: Graphene, interconnects, two-dimensional nanosheet, heterostructure, hexagonal boron nitride

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2 The Significance of the Radiography Technique in the Non-Destructive Evaluation of the Integrity and Reliability of Cast Interconnects

Authors: Keshav Pujeri, Pranesh Jain, Krutibas Panda

Abstract:

Significant changes in oil and gas drilling have emphasized the need to verify the integrity and reliability of drill stem components. Defects are inevitable in cast components, regardless of application; but if these defects go undetected, any severe defect could cause down-hole failure. One such defect is shrinkage porosity. Castings with lower level shrinkage porosity (CB levels 1 and 2) have scattered pores and do not occupy large volumes; so pressure testing and helium leak testing (HLT) are sufficient for qualifying the castings. However, castings with shrinkage porosity of CB level 3 and higher, behave erratically under pressure testing and HLT making these techniques insufficient for evaluating the castings- integrity. This paper presents a case study to highlight how the radiography technique is much more effective than pressure testing and HLT.

Keywords: interconnects, Radiography, casting defects, pressure test, Leak Check

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1 Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits

Authors: Saeed H. Nasiri, Rahim Faez, Bita Davoodi, Maryam Farrokhi

Abstract:

Bode stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3D-VLSI circuits is investigated for the first time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry of each tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable.

Keywords: interconnects, Bode stability criterion, Interlayer via, Single wall carbon nanotubes, Transmission line method, Time domain analysis

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