Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6

gamma irradiation Related Publications

6 Effects of Gamma Irradiation on Chemical and Antioxidant Properties of Iranian Native Fresh Barberry Fruit

Authors: Samira Berenji Ardestani, Hamid Reza Akhavan

Abstract:

Gamma irradiation greatly reduces the potential microbiological risk of fresh fruits, resulting in improved microbial safety as well as extending their shelf life. The effects of 0.5-2 kGy gamma doses on some physicochemical, microbial and sensory properties of fresh barberry fruits (Berberis vulgaris) during refrigerated storage for 40 days were evaluated. The total anthocyanin and total phenolic contents of barberry fruits decreased in a dose-dependent manner immediately after irradiation and after subsequent storage. In general, it is recommended that, according to the effect of gamma radiation on physicochemical, microbial and sensorial characteristics, doses of 1.25-2 kGy could be used.

Keywords: Chemical Properties, gamma irradiation, antioxidant property, barberry fruit

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5 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Sung Ho Ahn, Hani Baek, Gwang Min Sun, Chansun Shin

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: Switching, Recombination, gamma irradiation, NPT-IGBT, turn-off delay time, trap center

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4 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. A. H. Feghhi, H. Jafari, S. Boorboor

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: gamma irradiation, threshold voltage shift, MOS transistor, linear extrapolation

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3 Radiation Effects in the PVDF/Graphene Oxide Nanocomposites

Authors: Clascídia A. Furtado, Luiz O. Faria, Juliana V. Pereira, Adriana S. M. Batista, Jefferson P. Nascimento

Abstract:

Exposure to ionizing radiation has been found to induce changes in poly(vinylidene fluoride) (PVDF) homopolymers. The high dose gamma irradiation process induces the formation of C=C and C=O bonds in its [CH2-CF2]n main chain. The irradiation also provokes crosslinking and chain scission. All these radio-induced defects lead to changes in the PVDF crystalline structure. As a consequence, it is common to observe a decrease in the melting temperature (TM) and melting latent heat (LM) and some changes in its ferroelectric features. We have investigated the possibility of preparing nanocomposites of PVDF with graphene oxide (GO) through the radio-induction of molecular bonds. In this work, we discuss how the gamma radiation interacts with the nanocomposite crystalline structure.

Keywords: Nanocomposites, gamma irradiation, PVDF, grapheme oxide

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2 Characterization of Gamma Irradiated PVDF and PVDF/Graphene Oxide Composites by Spectroscopic Techniques

Authors: Clascídia A. Furtado, Luiz O. Faria, Juliana V. Pereira, Adriana S. M. Batista, Jefferson P. Nascimento

Abstract:

The combination of the properties of graphene oxide (OG) and PVDF homopolymer makes their combined composite materials as multifunctional systems with great potential. Knowledge of the molecular structure is essential for better use. In this work, the degradation of PVDF polymer exposed to gamma irradiation in oxygen atmosphere in high dose rate has been studied and compared to degradation of PVDF/OG composites. The samples were irradiated with a Co-60 source at constant dose rate, with doses ranging from 100 kGy to 1,000 kGy. In FTIR data shown that the formation of oxidation products was at the both samples with formation of carbonyl and hydroxyl groups amongst the most prevalent products in the pure PVDF samples. In the other hand, the composites samples exhibit less presence of degradation products with predominant formation of carbonyl groups, these results also seen in the UV-Vis analysis. The results show that the samples of composites may have greater resistance to the irradiation process, since they have less degradation products than pure PVDF samples seen by spectroscopic techniques.

Keywords: gamma irradiation, PVDF, PVDF/OG composites, spectroscopic techniques

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1 Study of γ Irradiation and Storage Time on Microbial Load and Chemical Quality of Persian Saffron

Authors: M. Jouki, N. Khazaei, A. Kalbasi, H. Tavakolipour, S. Rajabifar, F. Motamedi. Sedeh, A. Jouki

Abstract:

Irradiation is considered one of the most efficient technological processes for the reduction of microorganisms in food. It can be used to improve the safety of food products, and to extend their shelf lives. The aim of this study was to evaluate the effects of gamma irradiation for improvement of saffron shelf life. Samples were treated with 0 (none irradiated), 1.0, 2.0, 3.0 and 4.0 kGy of gamma irradiation and held for 2 months. The control and irradiated samples were underwent microbial analysis, chemical characteristics and sensory evaluation at 30 days intervals. Microbial analysis indicated that irradiation had a significant effect (P < 0.05) on the reduction of microbial loads. There was no significant difference in sensory quality and chemical characteristics during storage in saffron.

Keywords: Microbes, Contamination, gamma irradiation, saffron

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