Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4

Publications

4 RBS Characteristic of Cd1−xZnxS Thin Film Fabricated by Vacuum Deposition Method

Authors: N. Dahbi, D-E. Arafah

Abstract:

Cd1−xZnxS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford backscattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; the RBS spectra of the films showed that homogenous Cd1−xZnxS can be synthesized with x=0.45.

Keywords: Heat Treatment, Chemical Treatment, thin film, Cd1−xZnxS, depth profile, RBS, RUMP simulation, vacuum deposition, ZnS/CdS/ZnS

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3 Study the Influence of Chemical Treatment on the Compositional Changes and Defect Structures of ZnS Thin Film

Authors: N. Dahbi, D-E. Arafah

Abstract:

The effect of chemical treatment in CdCl2 on the compositional changes and defect structures of potentially useful ZnS solar cell thin films prepared by vacuum deposition method was studied using the complementary Rutherford backscattering (RBS) and Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various as deposited samples studied. After treatment, perturbation on the intensity is noted; mobile defect states and charge conversion and/or transfer between defect states are found.

Keywords: Thermoluminescence, Chemical Treatment, RBS, vacuum deposition, defect, ZnS, glow curve, thinfilm

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2 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: Monte Carlo Simulation, transport parameters, degeneracy case, Hg0.8Cd0.2Te semiconductor

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1 The Effect of Chemical Treatment on TL Glow Curves of CdS/ZnS Thin Films Deposited by Vacuum Deposition Method

Authors: N. Dahbi, D-E. Arafah

Abstract:

The effect of chemical treatment in CdCl2 and thermal annealing in 400°C, on the defect structures of potentially useful ZnS\CdS solar cell thin films deposited onto quartz substrate and prepared by vacuum deposition method was studied using the Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various deposited samples studied. After annealing, however, it was observed that the intensity and activation energy of TL signal increases with loss of the low temperature electron traps.

Keywords: Heat Treatment, Thermoluminescence, Chemical Treatment, thin film, CDS, ZnS, trapping parameters, vacuumdeposition

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