Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3

Publications

3 A Multi-Agent Simulation of Serious Games to Predict Their Impact on E-Learning Processes

Authors: Ibtissem Daoudi, Raoudha Chebil, Wided Lejouad Chaari

Abstract:

Serious games constitute actually a recent and attractive way supposed to replace the classical boring courses. However, the choice of the adapted serious game to a specific learning environment remains a challenging task that makes teachers unwilling to adopt this concept. To fill this gap, we present, in this paper, a multi-agent-based simulator allowing to predict the impact of a serious game integration in a learning environment given several game and players characteristics. As results, the presented tool gives intensities of several emotional aspects characterizing learners reactions to the serious game adoption. The presented simulator is tested to predict the effect of basing a coding course on the serious game ”CodeCombat”. The obtained results are compared with feedbacks of using the same serious game in a real learning process.

Keywords: Serious Games, emotion, learning process, multi-agent simulation

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2 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te

Authors: N. Dahbi, M. Daoudi, A.Belghachi

Abstract:

The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.

Keywords: Monte Carlo Simulation, transport parameters, degeneracy case, Hg0.8Cd0.2Te semiconductor

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1 Quasi-ballistic Transport in Submicron Hg0.8Cd0.2Te Diodes: Hydrodynamic Modeling

Authors: M. Daoudi, A. Belghachi, L. Varani

Abstract:

In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n+-n- n+ devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application( ( ≥ 9mV), the quasi-ballistic transport has an important effect.

Keywords: Hg0.8Cd0.2Te semiconductor, Hydrodynamicmode, Quasi-ballistic transport, Submicron diode

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