Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 10

analytical model Related Publications

10 Parametric Study of Vertical Diffusion Still for Water Desalination

Authors: A. Seleem, M. Mortada, M. El Morsi, M. Younan

Abstract:

Diffusion stills have been effective in water desalination. The present work represents a model of the distillation process by using vertical single-effect diffusion stills. A semianalytical model has been developed to model the process. A software computer code using Engineering Equation Solver EES software has been developed to solve the equations of the developed model. An experimental setup has been constructed, and used for the validation of the model. The model is also validated against former literature results. The results obtained from the present experimental test rig, and the data from the literature, have been compared with the results of the code to find its best range of validity. In addition, a parametric analysis of the system has been developed using the model to determine the effect of operating conditions on the system's performance. The dominant parameters that affect the productivity of the still are the hot plate temperature that ranges from (55- 90°C) and feed flow rate in range of (0.00694-0.0211 kg/m2-s).

Keywords: analytical model, solar distillation, vertical diffusion still, Sustainable Water Systems

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9 A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices

Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Electron Transport, Nanoscale devices, analytical model, SOI MOSFET

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8 Modeling of a Novel Dual-Belt Continuously Variable Transmission for Automobiles

Authors: Y. Q. Chen, P. K. Wong, Z. C. Xie, H. W. Wu, K. U. Chan, J., L. Huang

Abstract:

It is believed that continuously variable transmission (CVT) will dominate the automotive transmissions in the future. The most popular design is Van Doorne-s CVT with single metal pushing V-belt. However, it is only applicable to low power passenger cars because its major limitation is low torque capacity. Therefore, this research studies a novel dual-belt CVT system to overcome the limitation of traditional single-belt CVT, such that it can be applicable to the heavy-duty vehicles. This paper presents the mathematical model of the design and its experimental verification. Experimental and simulated results show that the model developed is valid and the proposed dual-belt CVT can really overcome the traditional limitation of single-belt Van Doorne-s CVT.

Keywords: analytical model, CVT, Dual belts, Torque capacity

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7 Analytical Cutting Forces Model of Helical Milling Operations

Authors: Changyi Liu, Gui Wang, Matthew Dargusch

Abstract:

Helical milling operations are used to generate or enlarge boreholes by means of a milling tool. The bore diameter can be adjusted through the diameter of the helical path. The kinematics of helical milling on a three axis machine tool is analysed firstly. The relationships between processing parameters, cutting tool geometry characters with machined hole feature are formulated. The feed motion of the cutting tool has been decomposed to plane circular feed and axial linear motion. In this paper, the time varying cutting forces acted on the side cutting edges and end cutting edges of the flat end cylinder miller is analysed using a discrete method separately. These two components then are combined to produce the cutting force model considering the complicated interaction between the cutters and workpiece. The time varying cutting force model describes the instantaneous cutting force during processing. This model could be used to predict cutting force, calculate statics deflection of cutter and workpiece, and also could be the foundation of dynamics model and predicting chatter limitation of the helical milling operations.

Keywords: cutting force, time domain, analytical model, Helical milling, Hole machining

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6 A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

Keywords: analytical model, Gate tunneling current, spacer dielectrics, DIBL, subthreshold slope

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5 Analytical Model for Predicting Whole Building Heat Transfer

Authors: Xiaoshu Lu, Martti Viljanen

Abstract:

A new analytical model is developed which provides close-formed solutions for both transient indoor and envelope temperature changes in buildings. Time-dependent boundary temperature is presented as Fourier series which can approximate real weather conditions. The final close-formed solutions are simple, concise, and comprehensive. The model was compared with numerical results and good accuracy was obtained. The model can be used as design and control guidelines in engineering applications for analysing mechanical heat transfer properties for buildings.

Keywords: Heat Transfer, analytical model, whole building

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4 Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords: MOSFET, analytical model, Gate tunneling current, gate dielectrics, non uniform poly gate doping, fringing field effect and image charges

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3 Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices

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2 Analytical Camera Model Supplemented with Influence of Temperature Variations

Authors: Peter Podbreznik, Božidar Potocnik

Abstract:

A camera in the building site is exposed to different weather conditions. Differences between images of the same scene captured with the same camera arise also due to temperature variations. The influence of temperature changes on camera parameters were modelled and integrated into existing analytical camera model. Modified camera model enables quantitatively assessing the influence of temperature variations.

Keywords: Camera Calibration, analytical model, temperature variations, intrinsic parameters, extrinsic parameters

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1 A Method for Analysis of Industrial Distributed Embedded Systems

Authors: Dmitry A. Mikoyelov

Abstract:

The paper presents a set of guidelines for analysis of industrial embedded distributed systems and introduces a mathematical model derived from these guidelines. In this study, the author examines a set of modern communication technologies that are or possibly can be used to build communication links between the subsystems of a distributed embedded system. An investigation of these guidelines results in a algorithm for analysis of specific use cases of target technologies. A goal of the paper acts as an important base for ongoing research on comparison of communication technologies. The author describes the principles of the model and presents results of the test calculations. Practical implementation of target technologies and empirical experiment data are based on a practical experience during the design and test of specific distributed systems in Latvian market.

Keywords: Communication Technology, analytical model, Distributed embedded system

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