Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2

silicon substrate Related Abstracts

2 A Machining Method of Cross-Shape Nano Channel and Experiments for Silicon Substrate

Authors: Zone-Ching Lin, Hao-Yuan Jheng, Zih-Wun Jhang

Abstract:

The paper innovatively proposes using the concept of specific down force energy (SDFE) and AFM machine to establish a machining method of cross-shape nanochannel on single-crystal silicon substrate. As for machining a cross-shape nanochannel by AFM machine, the paper develop a method of machining cross-shape nanochannel groove at a fixed down force by using SDFE theory and combining the planned cutting path of cross-shape nanochannel up to 5th machining layer it finally achieves a cross-shape nanochannel at a cutting depth of around 20nm. Since there may be standing burr at the machined cross-shape nanochannel edge, the paper uses a smaller down force to cut the edge of the cross-shape nanochannel in order to lower the height of standing burr and converge the height of standing burr at the edge to below 0.54nm as set by the paper. Finally, the paper conducts experiments of machining cross-shape nanochannel groove on single-crystal silicon by AFM probe, and compares the simulation and experimental results. It is proved that this proposed machining method of cross-shape nanochannel is feasible.

Keywords: Atomic Force Microscopy (AFM), cross-shape nanochannel, silicon substrate, specific down force energy (SDFE)

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1 Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design

Authors: Chia-Ching Wu, Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Meng-Chyi Wu

Abstract:

In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).

Keywords: silicon substrate, field plate, AlGaN/GaN heterostructure, Schottky barrier diode (SBD), high breakdown voltage, Baliga’s figure-of-merit

Procedia PDF Downloads 162